고입력 내성을 위한 GaN HEMT 기반 S-대역 저잡음 증폭기

Abstract

Abstract In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm. Key words: LNA, GaN HEMT, Robustness, Current Limit ‡wxˆ3‰Š 5wx‹9Œ wx . Ž ‘+C’“(Department of Wireless Communications Engineering,, Kwangwoon University) *ˆ3‰Š(Samsung Thales, Co, Ltd) `Manuscript received December 24, 2014 ; Revised February 5, 2015 ; Accepted February 6, 2015. (ID No. 20141224-105)`Corresponding Author: Jin-Joo Choi (e-mail: jinchoi@kw.ac.kr)