Abstract
The feasibility of using CMOS technology for RF amplification in atmospheric remote sensing receiver is studied. The design and measurement results of a 200-GHz low-noise amplifier which is fabricated using a 32-nm SOI CMOS technology are presented. The 8-stage amplifier in a common-source configuration achieves a 9-dB noise figure and 25-dB gain with a power consumption of 33 mW.
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