DC Magnetron Sputtering Method Research Articles

The Synthesis of Ag/TiO2 via the DC Magnetron Sputtering Method and Its Application in the Photocatalytic Degradation of Methyl Orange in Na2SO4 Solution

TiO2 and TiO2 films modified with Ag (Ag/TiO2) were prepared via the DC magnetron sputtering method and the degree of modification was controlled via the sputtering power and time of Ag. The microstructures and properties of these films were characterized using field emission scanning electron microscopy, X-ray diffractometry, ultraviolet–visible diffuse reflectance spectrometry, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The results show that the prepared films have an anatase structure. Compared with pure TiO2, Ag deposition can improve the utilization of light. The three-dimensional images of Ag/TiO2 clearly show that with the increase in Ag sputtering power and sputtering time, Ag particles on the surface of the film gradually increase, and the structure of the film is relatively dense. The photocatalytic effect of Ag/TiO2 films is the best when the Ag sputtering power is 5 W and the sputtering time is 50 s. Under high-pressure mercury lamp irradiation, the photocatalytic degradation rate of methyl orange (MO) in pure MO solution with Ag/TiO2-5 W-50 s can reach 100% within 55 min, whereas that in MO-Na2SO4 mixed solution can reach 99.55% within 65 min. The results suggest that the presence of Na2SO4 in MO solution can inhibit the degradation of MO using Ag/TiO2, the result of XPS suggests that Na2SO4 accelerates the oxidation of Ag, which may lead to an increase in the recombination rate of photogenerated electron–hole pairs and a decrease in the degradation rate. During the process of recycling photocatalysts, the degradation rate of MO was apparently reduced. A possible reason is that the Ag particles have been oxidized and products of photocatalytic degradation are on the surface of the photocatalyst. The photocatalytic degradation mechanism was studied.

Effect of Substrate Temperature and Deposition Power on the Surface Morphology and Optical Properties of ZnO:Mg Thin Films Deposited by DC Magnetron Sputtering

Magnesium doped zinc oxide (ZnO:Mg) thin films were deposited on soda lime glass slides by DC magnetron sputtering method. Atomic force microscope (AFM), and UV/VIS spectrophotometer were used to investigate the effect of sputtering power and substrate temperature on the surface morphology and optical properties of ZnO:Mg thin films. AFM images revealed that sputtering power and deposition temperature have significant influence on surface morphology of the ZnO:Mg thin films. For all sputtering powers and substrate temperatures investigated, ZnO:Mg films had peak transmittance above 85%. Samples deposited at 110 W sputtering power and 450 °C substrate temperature showed the best peak transmittance of > 90% at 560 nm (visible range). Optical band gap of ZnO:Mg films was in the range of 3.44– 3.69 eV depending on the substrate temperature. The results indicated the potential of the films for transparent conductor applications.

Structural and Optical Characteristics of Multilayer ZnO Nanorod:TiO2 by DC Magnetron Sputtering for Dye Sensitized Solar Cell (DSSC) Application

The development of Dye-Sensitized Solar Cell (DSSC) technology by utilizing various semiconductors has attracted attention. Among all types of semiconductors, the nanostructure of ZnO is selected due to their unique electrical properties and ease of preparation in various morphologies, and it has been considered a promising material to be applied in DSSC. In this research, the DC magnetron sputtering method was used to prepare ZnO thin films as an efficient alternative to press the charge recombination process that occurs in TiO2-based DSSC. Different thicknesses of TiO2 layers on the FTO conductive glass substrate were made through various sputtering deposition times, while the ZnO nanorod layers were made with a single layer using the hydrothermal method. We used XRD, SEM, UV-Vis, I-V meter, and EIS analysis. Based on these characterization we concluded that multilayer ZnO nanorod:TiO2 coating with a sputtering time of 60 minutes resulted the best performance of DSSC with an efficiency of 0.27%.

The Influence of Nitrogen Flow on the Stoichiometric Composition, Structure, Mechanical, and Microtribological Properties of TiN Coatings.

Utilizing reactive DC magnetron sputtering method, TiN coatings were deposited on the silicon substrates at different nitrogen flows and powers. A study of the X-ray phase composition of the coatings was carried out. The stoichiometric composition of the coatings was determined using energy dispersive x-ray spectroscopy. The structure of the surface, cross-section, and thickness of the coatings were determined using scanning electron (SEM) and atomic force microscopy (AFM). A significant change in the surface structure of TiN coatings was established with changes in deposition power and nitrogen flow. SEM images of cross-sections of all coated samples showed that the formation of coatings occurs in the form of a columnar structure with a perpendicular orientation relative to the silicon substrate. The mechanical properties (elastic modulus E and microhardness H) of TiN coatings of the first group demonstrate a maximum at a nitrogen flow of 3 sccm and are 184 ± 11 GPa and 15.7 ± 1.3 GPa, respectively. In the second group, the values of E and H increase due to a decrease in the size of the structural elements of the coating (grains and crystallites). In the third group, E and H decrease. Microtribological tests were carried out in 4 stages: at a constant load, multi-cycle for 10 and 100 cycles, and with increasing load. The coefficient of friction (CoF) and specific volumetric wear ω depend on the roughness, topology, and mechanical properties of the resulting coatings. Fracture toughness was determined using nanoscratch and depends on the mechanical properties of TiN coatings. Within each group, coatings with the best mechanical and microtribological properties were described: in the first group-TiN coating at 3 sccm (with (29.6 ± 0.1) at.% N), in the second group-TiN coating at 2 sccm (with (40.8 ± 0.2) at.% N), and in the third group-TiN coating at 1 sccm (c (37.3 ± 0.2) at.% N).

The Effect of Adding Aluminium on the Performance of ZnO NRs/PANi in Their Application as Photoelectrochemical Water Splitting

Photoelectrochemical (PEC) is a new renewable energy technology that converts H2O into hydrogen and oxygen gas with the help of sunlight. A photoelectrochemical cell device consists of three main components, one of which is the photoanode. One of the materials that can be used as a photoanode is ZnO which has good electrical properties and is non-toxic. Nanorods-structured ZnO has the advantage of being able to increase light absorption due to its high surface area. However, the resulting performance is still quite low. So it is necessary to make modifications to the photoanode, one of which is by adding aluminium material to ZnO NRs, which has the potential to increase the conductivity of PEC in the production of H2 and O2 in H2O. To overcome the loss of samples during testing, the thin film will be coated with conductive polymers such as polyaniline (PANi), which has high conductivity, can increase photoactive ability, and has good corrosion resistance. In this study, the performance of ZnO NRs/PANi against AZO NRs/PANi will be studied by adding aluminium. The ZnO nanorods were synthesized by Hydrothermal method, Aluminium was deposited on ZnO NRs by DC Magnetron Sputtering method, and PANi was synthesized by polymerization method. From the XRD characterization results, it can be concluded that the addition of aluminium to ZnO NRs/PANi causes an increase in crystallinity and peak shift. SEM characterization shows that the addition of Al to ZnO NRs/PANi causes the porosity value to increase. In addition, UV-Vis characterization showed that the addition of Al material to the ZnO NRs/PANi thin film resulted in a wider range of absorbance of the light spectrum. Then, Cyclic Voltammetry test shows that the addition of aluminium increases the efficiency of the photoelectrochemical.

Preparing CuO, Cu2O thin films at various argon gas by using reactive dc magnetron sputtering method

Copper oxide (Cu2O, CuO) has been formed by dc reactive magnetron sputtering method of glass substrates, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas which are used form these films. Under vacuum chamber pressure on 1.2×10-5 Pa, Ar was varying from 5 to 15 sccm while other deposition parameters were fixed. X-ray photoelectron spectroscopy, XRD diffractions system, Atomic Force Microscopy (AFM), hall effect measurement system, and UV–VIS spectrophotometer were used to calculate the characteristic of the deposited thin films. Thin film at 5 sccm has investigated n-type of CuO thin film with direct band gap of 1.8eV and p-type of Cu2O at 15 sccm with direct band gap of 2.7eV. The influence of changing the Ar on the electrical and the optical properties was investigated in this study, furthermore in this study approved that the reactive dc magnetron sputtering method is suitable to prepare two type of semiconductors by change only one condition.

Gold coated vertically aligned carbon nanotubes as electrode for electrochemical capacitors

In this work, gold (Au) films were deposited onto vertically aligned carbon nanotubes (CNTs) by Dc magnetron sputtering method for use as super-capacitor electrodes. By so doing, we synthesize a porous Au deposit anchored on the CNTs with a high apparent surface area. The structure and microstructure studies revealed that the Au@CNTs have a porous nanostructure morphology. The porous Au/CNTs electrodes exhibit an a good areal capacitance compared to state of art Au based electrode (25.6 mF cm-2 at 5 mV.s-1) and excellent cycling stability (90% retention after 10.000 cycles) in 0.5 M H2SO4 aqueous solution. These results demonstrate the beneficial use of CNTs to fabricate a porous Au deposit with improved electrochemical energy storage. In addition, these porous structures can also be used as templates for another type of materials for electrochemical energy storage.

Formation of pure anatase TiO2 using the reactive pulsed dc magnetron sputtering method for controlling the target poisoning state

AbstractThe use of pulsed dc‐sputtering sources for reactive magnetron sputtering with oxygen offers a possibility to suppress the negative effects of target poisoning (such as arcing). This results in a wide process range for the selection of a desired operating point. The control of target poisoning plays a major role in maintaining constant coating properties and affects the stoichiometry of the reactive coating, as well as the coating rate and the economic impact of the coating process. In a hysteresis, the target poisoning during the reactive sputtering of titanium under oxygen addition proceeds nonlinearly. Without the use of a suitable target poisoning control technique, the sputtering process can abruptly change to an unstable state. As a result, variations of stoichiometry can occur during the deposition process. A proven method for maintaining a stable reactive sputtering process is the control of oxygen flow with the input variable target voltage. By determining the typical oxygen hysteresis at constant target power and constant argon flow, an operating point for the control loop is derived. The desired target voltage then serves as the input variable for the control loop of the target poisoning. The controlling technique for target poisoning is a basic requirement for the production of the photolytic active anatase phase of titanium dioxide (TiO2) using reactive magnetron sputtering. The photocatalytic equipment of surfaces with a titanium dioxide coating in the anatase phase can be realized with the reactive pulsed dc magnetron sputter ion plating process (DC‐MSIP). The pulsed DC‐MSIP process facilitates coating a variety of surfaces at temperatures below 200°C in an environmentally friendly manner.

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface.

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability.

Comparison study of WO3 thin film and nanorods for smart window applications

The WO3 thin films were deposited at oxygen partial pressure of 8x10-4 mbar. A template-free straightforward hydrothermal method is employed to produce vertical alignment hierarchical WO3 nano-architectures on clear conducting substrates (3x2.5 cm2 in size and slides resistance 4 O). After being deposited at ambient temperature, the samples were air annealed at 400 °C for 4 h. The optical, electrochromic, surface and structural morphology behavior of the deposited material after annealing were studied using XRD, Raman, FTIR, SEM, electrochemical analyzer and UV–Visible spectrometer characterization methods. After annealing at 400 °C for 4 h in air, every characteristic peak are matched to a monoclinic (crystalline) WO3 phase. The Nano flower array achieved a considerable coloration efficiency (24.09 cm2/s) and low cathodic peak current (−2.03 mA) compare to the Tungsten trioxide thin film produced by the DC magnetron sputtering method. The vertically oriented geometry and the porosity space between the Nano flower, which improve H+ diffusion and provide a considerable contact area for charge-transfer processes, are primarily responsible for the improved electrochromic properties.

Study on electrochemical ion behavior and electrochromic properties of NiO thin films prepared by magnetron sputtering with different oxygen levels

Electrochromic NiO thin films were prepared by the DC magnetron sputtering method under different oxygen partial pressure conditions. The phase, microstructure, ions moving behavior, and electrochromic properties of NiO films were investigated by X-ray diffraction, field emission scanning electron microscopy, Raman spectrometer, electrochemical workstation, and ultraviolet-visible-infrared spectrophotometer, respectively. The sample prepared under middle oxygen partial pressure shows better electrochromic properties after the coloring and bleaching cycles. The coloring or bleaching time is 1∼4 s, the optical modulation amplitude is 40.6% and the coloration efficiency is 37.63 cm2·C−1. The oxygen partial pressure may mainly affect the crystallinity of the samples, resulting in different charge-transfer resistance which is related to the reactions of coloring or irreversible non-coloring. Further, the Li+ can be stored in the volume space and surface space of NiO thin films, and the grain boundary and lattice gap are two existent paths for Li+transmission and storage.

Investigation of Structure and Optical Properties for Copper Oxide Thin Films on Plastic Substrate by Helicon Plasma DC Magnetron Sputtering Technique

As we move towards a decarbonized society, transparent solar cells have recently become an important means of increasing power generation in familiar locations. Copper oxide has been attracting attention as a candidate material for the production of transparent solar cells. In order to further expand the range of applications, it is believed that it will be necessary to develop flexible, transparent plastic substrates. For the purpose of optical applications, copper oxide thin films with CuO, Cu2O, or both phases were fabricated on highly transparent plastics such as poly-methyl methacrylate (PMMA) and polycarbonate (PC), as well as on a glass substrate as a comparable sample. The helicon plasma DC magnetron sputtering method was used to fabricate thin films at a low deposition temperature due to the low heat resistance of plastic substrates. In addition, the helicon plasma DC magnetron sputtering method is capable of depositing films at low vacuum pressure, which enables the preparation of thin films with high crystallinity. The structure, surface shape, and optical properties of fabricated films were investigated using X-ray diffraction (XRD), a laser microscope, and a UV-Vis spectrophotometer, respectively. In this study, the formation of copper oxide thin films on plastic substrates at low temperatures has been verified, as have the crystal structure and optical properties, which is considered a rare study in this field.

Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor

This paper investigates the effect of oxygen gas in the sputtering process of the WO3 sensing layer. The WO3 sensing layer is deposited on the Si FET-type gas sensor platform having horizontal floating-gate (FG) interdigitated with control-gate (CG) by using the DC magnetron sputtering method. When exposed to the NO2 gas, the drain current of the FET-type gas sensor with the WO3 sensing layer increases since the NO2 gas is known as an oxidizing gas. In this work, NO2 sensing characteristics of the gas sensors with the WO3 sensing layer deposited under three different sputtering conditions are compared. The flow rate of argon gas in total sputtering gas is fixed at 30 sccm, and the flow rate of oxygen gas is changed (0, 1, and 3 sccm). NO2 response of the gas sensor with WO3 sensing layer deposited using the oxygen gas with the argon gas in the sputtering process is higher than that of the gas sensor with WO3 sensing layer deposited using only argon gas. As the ratio of oxygen gas in the total sputtering gas increases, the response of the gas sensor increases since the size of the grain is reduced and the number of W = O bonds at the grain boundary increases. Therefore, NO2 response of the FET-type gas sensor with the WO3 sensing layer deposited at an oxygen flow rate of 3 sccm in the sputtering process is the largest. The optimized FET-type gas sensor has excellent selectivity for NO2 target gas.

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV–Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron–phonon interaction, dissipation factor (tanδ) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to quantitively investigate the surface analysis. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and it was found that the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.

Corrosion Analysis of Mg/Al2O3 Bio-Degradable Nanolaminate Thin-Films Fabricated Using DC/Pulsed DC Magnetron-Sputtering Technique

Multilayered Thin films are effective in controlling the rate of corrosion of magnesium alloys used for bio-implants applications. It’s been proven that corrosion of metallic implants can be delayed by depositing multilayered metal-oxide thin films. In this study, Mg/Al2O3 nanolaminates, along with different metal oxides, were deposited using DC and pulsed DC magnetron sputtering methods at room temperature on glass substrates. Applicability of these metal-oxide nanolaminates to corrosion control was studied by bulk volumetric degradation measurement technique using solutions such as Saline, HANKS and PBS. Mg/Al2O3 films were also studied under different flow conditions by varying flow rates and pore growth rate and degradation process are measured by time-lapsed technique on optical microscope. Effect of the oxide layer thickness, saline flow rate, total pressure, structural characteristics of oxide coatings and sputtering deposition parameters on pore density and corrosion rate was investigated. Pulsed DC magnetron sputtering enables preparation of thin films with control over pore growth and distribution. Results have shown that repeatable pore density and corrosion rate can be achieved through magnetron sputter-deposited Mg/Al2O3 nanolaminates.

Development of Biosensors for Ethanol Gas Detection

This work developed a biosensor for the measurement of ethanol gas in the air. The biosensors were synthesized by mixing signal layer materials containing SiO2 and polyimide (PI) substrates using the enzyme Alcohol Dehydrogenase (ADH) and coenzyme Nicotinamide Adenine Dinucleotide (NAD+) as a biosensor. The electrodes were coated on biosensors by DC magnetron sputtering method for test the response performance of the developed biosensors. The ADH/NAD+ was immobilized on the Ag electrode by Glutaric dialaehyde 25 wt. % cross-linking procedure. It was found that, alcohol biosensors can be exhibited sensing ethanol gas at even low concentrations from 300 ppb to very high concentrations up to 1900 ppm, response time 3 s, recovery times 1-2 minutes and good sensitivity. The SiO2 substrate has excellent, which provides significant advantages for wearable electronic device that compact, easy to use and reduce direct contact with alcoholics. The alcohol biosensors can adoption in next generation to other electronic devices, because easy to integrate, such as a module alcohol biosensor with wireless or the fabrication of the RCL circuit. Furthermore, the alcohol biosensors based on SiO2/Ag/ADH, PI/Ag/ADH is artificial intelligence strategy for stable practical wearable electronic devices.

Technology and measurements of three-layer NiFeCuMo/Ti/NiFeCuMo structures exhibiting the giant magnetoresistance phenomenon

Magnetoresistive phenomena are widely used in the construction of magnetic field sensors for biological, space, automotive, etc., applications. For this purpose, a number of methods of obtaining and testing this type of sensor are used. Therefore, the motivation to take up this topic is to obtain a structure showing magnetoresistance and carry out electrical measurements in a magnetic field to confirm the assumptions about the presence of magnetoresistance. This paper focuses on the technology and measurements of thin-film three-layer resistors. Structures NiFeCuMo/Ti/NiFeCuMo with 100/10/100 nm thicknesses were developed in situ using a DC magnetron sputtering method. A scanning electron microscopy or energy dispersive spectroscopy analysis was conducted on a sample structure and the target alloy to establish their chemical composition. The occurrence of the giant magnetoresistance exhibited by the developed three-layers was successfully confirmed in the presence of an applied magnetic field and the maximum value of resistance changes ΔR was approximately 2.75 Ω. Additionally, the thickness of the resistors was determined with a confocal microscope to verify the accuracy of the applied deposition method.

Transparent thermoelectric properties of copper iodide thin films

Copper Iodide (CuI) transparent thin films were synthesized by using the as-deposited Cu thin film dip in the Iodine (I2) solution (1% per 100 cc.) for 15s, 30s, and 60s within the liquid iodination method. The as-deposited Cu thin films on glass slide substrates as used were prepared by a dc magnetron sputtering method from the Cu target. The microstructure, morphology, and thermoelectric properties were studied by using X-ray diffraction (XRD) techniques, scanning electron microscopy (SEM), and the ZEM-3 method, respectively. The optical property of the film samples was determined from measured transmittance using a UV–visible spectrophotometer. The optical bandgap energy is 3.0 eV and the transmittance is around 80–95% for the thin film as dipped 30s. At room temperature, the power factor of Cul thin films were 14.71, 17.49, and 17.48 μW m−1 K−2 for as dipped 15s, 30s, and 60s, respectively.

Fabrication of porous 1D WO3 NRs and WO3/BiVO4 hetero junction photoanode for efficient photoelectrochemical water splitting

Porous columnar nanostructured photoelectrodes may significantly affect the photoelectrochemical (PEC) water splitting efficiency. The glancing angle deposition (GLAD) technique is the most popular method to fabricate columnar nanostructured thin films. Here, we have fabricated vertically aligned porous 1D tungsten oxide nano-rod (1D WO3 NRs) thin films by DC magnetron sputtering method using glancing angle deposition with a constant rotation speed of 5 rpm. The depositions carried out at various deposition angles of α = 0°, 60°, 70°, 75°, 80°, and 85°. The deposited 1D WO3 NRs adopted a monoclinic structure oriented in the (002) crystalline plane perpendicular to the FTO substrate. Using systematic deposition conditions, the porous columnar 1D WO3 NRs were engineered to find the effect on the photoelectrochemical water splitting. Photocurrent density of the 1D WO3 NRs photoanodes was tested in near-neutral pH (0.5 M Na2SO4) electrolyte solutions. Under the optimum conditions, the 1D WO3NRs photoanode led to the premier photocurrent density of 1.04 mA/cm2 (1 V vs. Ag/AgCl) due to the optimum surface porosity in the 1D WO3 NRs. The individual layer of BiVO4 photoanode exhibited a photocurrent density of 1.24 mA/cm2 (1V vs. Ag/AgCl). Highest photocurrent density of 2.24 mA/cm2 with high photo-stability was observed in optimized heterostructure of 1D WO3 NRs/BiVO4 photoanode.

Influence of N2 doping on photodective properties of p-typed Zn-N co-doped SnO2/n-Si heterojunction

This work studied the effects of Zn and N co-doping on the crystal structure, electrical properties, and photoelectric effects of p-typed Zn-N co-doped SnO2/n-Si heterojunction. Zn and N co-doped SnO2 films (ZNTO) were deposited on n-type Si substrates at 300oC in different sputtering gas mixture Ar/N2 (% N = 0%, 30%, 50%, 60%, 70 % and 80%) from 5 wt% ZnO doped SnO2 target by the DC magnetron sputtering method. The crystal structure, surface morphology, chemical composition, electrical properties, and photoelectric effects of ZNTO films were investigated by measurements such as X-ray diffraction, FESEM, AFM, EDS, Hall, and I-V. The results showed that all films had a rutile structure, and the SnO2 (101) reflection was dominant on the optimal fabrication of 70% N2. Substitution of Sn4+ by Zn2+ and O2􀀀 by N3􀀀 were determined by the X-ray diffraction pattern (XRD) and X-ray energy scattering spectrum (EDS). The lowest resistivity for the ZNTO-5-70 film was r= 6.5010􀀀2 W.cmwith carrier concentration n = 1.461019 cm􀀀3 and hole mobility m = 6.52 cm2.V􀀀1.s􀀀1 respectively. I-V characteristics of the p – ZNTO – 5 – y/n – Si under the illumination condition showed the p-type electrical properties and their application as optical sensors. The ZNTO – 5 – y films' optical response current characteristic had high sensitivity and good reproducibility.