Abstract
Copper oxide (Cu2O, CuO) has been formed by dc reactive magnetron sputtering method of glass substrates, whereas pure target of the solid copper was sputtered with a mixture of plasma for argon gas and oxygen gas which are used form these films. Under vacuum chamber pressure on 1.2×10-5 Pa, Ar was varying from 5 to 15 sccm while other deposition parameters were fixed. X-ray photoelectron spectroscopy, XRD diffractions system, Atomic Force Microscopy (AFM), hall effect measurement system, and UV–VIS spectrophotometer were used to calculate the characteristic of the deposited thin films. Thin film at 5 sccm has investigated n-type of CuO thin film with direct band gap of 1.8eV and p-type of Cu2O at 15 sccm with direct band gap of 2.7eV. The influence of changing the Ar on the electrical and the optical properties was investigated in this study, furthermore in this study approved that the reactive dc magnetron sputtering method is suitable to prepare two type of semiconductors by change only one condition.
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