Current-voltage Characteristics Research Articles

Large reduction in band gap and conduction mechanisms in Bi0.5Na0.5TiO3-based ceramics with a sizable polarization

Low band gap ferroelectrics that exhibit high polarization at ambient conditions are highly desirable for achieving efficient charge carrier separation in photovoltaic applications. In this work, a well-designed Co/Nb-modified Bi0.5Na0.5TiO3 system (1-x)Bi0.5Na0.5TiO3-xCaCo0.5Nb0.5O3 with x=0.00–0.20 offers a platform with the characteristics of low band gap and high ferroelectric polarization simultaneously. A structural phase transition from rhombohedral to monoclinic structure as the x content increases, which is verified by XRD analysis. Specifically, the x=0.10 ceramic exhibited a considerable high remanent polarization of 20.2 μC/cm2 and a low band gap of 2.18 eV, approximately 31% lower than that for a pure BNT sample (∼3.13 eV). However, the leakage current significantly increased with an increase in the x content, where it exceeded by more than three orders of magnitude for the x=0.20 sample in comparison to the pure BNT sample. Current-voltage characteristics revealed that space-charge-limited conduction was the primary conduction mechanism within the ceramics with x<0.20, which can be attributed to the free carriers confined by oxygen vacancies. On the other hand, field-assisted ionic conduction was revealed to be the primary conduction mechanism in the sample corresponding to x=0.20 at room temperature. We ascribe these mechanisms to oxygen vacancies and multivalent cobalt ions based on the XPS analysis. An improved understanding of conduction mechanism sheds light on leakage current problems and facilitates the design of BNT-based ferroelectric devices with excellent insulating character for high-performance photoelectric and photovoltaic applications.

Drift of Schottky Barrier Height in Phase Change Materials.

Phase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their practical use is hampered by resistance drift, a phenomenon commonly attributed to structural relaxation or electronic mechanisms primarily in the context of bulk effects. In this study, we reevaluate the electrical manifestation of resistance drift in sub-100 nm Ge2Sb2Te5 (GST) PCM devices, focusing on the contributions of bulk vs interface effects. We employ a combination of measurement techniques to elucidate the current transport mechanism and the electrical manifestation of resistance drift. Our steady-state temperature-dependent measurements reveal that resistance in these devices is predominantly influenced by their electrical contacts, with conduction occurring through thermionic emission (Schottky) at the contacts. Additionally, temporal current-voltage characterization allows us to link the resistance drift to a time-dependent increase in the Schottky barrier height. These findings provide valuable insights, pinpointing the primary contributor to resistance drift in PCM devices: the Schottky barrier height for hole injection at the interface. This underscores the significance of contacts (interface) in the electrical manifestation of drift in PCM devices.

The dispensability of 14-3-3 proteins for the regulation of human cardiac sodium channel Nav1.5.

14-3-3 proteins are ubiquitous proteins that play a role in cardiac physiology (e.g., metabolism, development, and cell cycle). Furthermore, 14-3-3 proteins were proposed to regulate the electrical function of the heart by interacting with several cardiac ion channels, including the voltage-gated sodium channel Nav1.5. Given the many cardiac arrhythmias associated with Nav1.5 dysfunction, understanding its regulation by the protein partners is crucial. In this study, we aimed to investigate the role of 14-3-3 proteins in the regulation of the human cardiac sodium channel Nav1.5. Amongst the seven 14-3-3 isoforms, only 14-3-3η (encoded by YWHAH gene) weakly co-immunoprecipitated with Nav1.5 when heterologously co-expressed in tsA201 cells. Total and cell surface expression of Nav1.5 was however not modified by 14-3-3η overexpression or inhibition with difopein, and 14-3-3η did not affect physical interaction between Nav1.5 α-α subunits. The current-voltage relationship and the amplitude of Nav1.5-mediated sodium peak current density were also not changed. Our findings illustrate that the direct implication of 14-3-3 proteins in regulating Nav1.5 is not evident in a transformed human kidney cell line tsA201.

An Adaptive Reclosing Scheme for Cross-Line Faults on Double-Circuit Wind Power Outgoing Lines with Shunt Reactors

Wind turbines are vulnerable to negative sequence current injection, the conventional automatic reclosing scheme for wind power outgoing lines, since we may inject negative sequence components into the system and reclose it without distinguishing the nature of the fault through rectification. Moreover, reclosing in permanent faults could induce a secondary impact on the system. To solve the above problems, an adaptive reclosing scheme for cross-line faults on double-circuit wind power outgoing lines with shunt reactors is proposed. Firstly, a new tripping strategy and a single-side partial-phase reclosing method are proposed for multiple types of outgoing line faults, while, simultaneously, phase-to-phase coupling loops are established. Secondly, the criteria of fault nature are established based on the fault phase shunt reactor current and fault phase voltage characteristics, and transient faults are rapidly and accurately distinguished from permanent ones according to the criteria. Finally, the theoretical derivation and simulation experiments are conducted on the PSCAD/EMTDC platform to demonstrate that the proposed adaptive reclosing method is applicable to avoid the injection of negative sequence currents into wind turbines. Meanwhile, the success rate of reclosing for wind power outgoing line is significantly improved and the continuity of power transmission on the wind farm(s) is ensured.

Evaluation of electrochemical performance of supercapacitors from equivalent circuits through cyclic voltammetry and galvanostatic charge/discharge

Conventional methods used to analyze electrochemical performance of supercapacitors are complex and cannot illustrate the asymmetrical behavior of charge and discharge curves and the variation of resistance with scan rate and current density. In this work, we propose a simple method to calculate total capacitance and internal resistance of supercapacitors with equivalent circuits and discuss the mechanisms responsible for the asymmetry of galvanostatic charge discharge (GCD) curves. Using the equivalent circuits, we demonstrate the feasibility of analyzing electrochemical performance of supercapacitors from the current-voltage curve for cyclic voltammetry (CV) and the GCD curves for galvanostatic cycling. A series of supercapacitors are constructed, in which the electrodes are pre-compressed under a compressive stress in a range of 1– 7.5 MPa. The experimental results reveal that the total capacitance of the supercapacitors increases with increasing the pre-compressive stress and validated the proposed method. Increasing the pre-compressive stress likely can improve the electrochemical performance of supercapacitors. The results from the analysis with the analytical relations for the resistance of the resistor in parallel connection in the three-element circuit approaching infinity exhibit similar trends to the corresponding ones from the conventional methods in contrast to the results from the three-element circuit, which exhibit different trends. The three-element circuit with the resistor in parallel connection approaching infinity can be used to analyze the electrochemical performance of supercapacitors for both the CV and GCD operational conditions.

A new superior electronic properties Si allotrope for power electronic device applications

A new I−4 space group silicon allotrope is proposed in this paper. The electronics properties, mechanical properties and Ag(100)/I4Si(100) interface properties are studied using first principle calculations method. The results of the phonon show that I−4 Si is dynamically stable. Elastic constants reveal I−4 Si is dynamical stable. Electronics properties calculations reveal that the CBM and VBM of I−4 Si are at X and M point, which indicates that I−4 Si is an indirect band gap semiconductor with a high band gap of 1.95 eV. To satisfy the demands for fabricating electronic devices, the N-type doping, P-type doping and Ohmic contact are studied, too. The fermi energy level of N-type and P-type I−4 Si move into conduction band and valence band, respectively. The Schottky barrier of Ag/I-4 interface is 0.65 eV. Meanwhile, the current-voltage curve becomes highly symmetric, suggesting an Ohmic behavior of the Ag(100)/I4Si(100) interface. Critical breakdown field calculations results show that the critical breakdown field of I−4 Si is 9.05 × 105 V cm−1, which is 3.02 times that of the diamond Si. Because band gap and critical breakdown field of I-4 Si are much greater than that of diamond Si, I-4 Si is potential electronic semiconductor material. Thus, I−4 Si can be applied in the field of modern power electronic device applications due to its superior electronic properties.

Thermal-based Zinc-Oxide-Coated Smart Fabric for Thermochromic Applications

The present study focuses on developing a thermochromic device with a flexible substrate through the coating of cotton fabric with ZnO (Zinc oxide) by solvothermal synthesis technique. Here, ZnO is used as the thermochromic layer for the fabrication work, and it is suitable for textile and wearable applications as it is non-toxic to human skin. This device is designed and fabricated in order to gain better insight into the role of ZnO in thermochromic applications. Here, 3D nanostructures of ZnO are grown on the surface of cotton fabric using a simple and cost-effective solvothermal synthesis approach. The coated fabrics are investigated to determine their structure, morphology, composition, electrical, optical and emissivity properties using an X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), current-voltage (I-V) characteristics, ultraviolet protection factor (UPF) etc. From the morphology study, uniformly packed ZnO nanorods with growth in the c-axis direction are observed. The ZnO nanostructures are known to have excellent UPF when exposed to solar radiation and showed UPF value of 112.48. It is found that coated fabrics have increased electrical conductivity under optical excitations and also enhanced the reflectance. Moreover, based on the emissivity analysis coated ZnO cotton fabric showed the emissivity of 0.95, which is higher and has greater radiation protection than that of bare cotton fabric. Hence, the developed thermochromic device has potential for use in the future in textile and wearable based thermochromic application.

Constructing prediction intervals for circuit board fault detection: A neural network approach using VI Curve

AbstractThe accuracy and reliability of circuit board fault detection are significantly influenced by the uncertainty inherent in the VI curve. Here, an ensemble neural network is proposed, which combines the neural network‐based prediction interval and ensemble approaches, to improve the accuracy of fault detection using the VI curve. First, a loss function with multiple objectives is formulated by integrating curve fitting and prediction interval. The aim is to achieve the curve fitting between current and voltage while simultaneously determining the optimal upper and lower bounds of the prediction interval. Second, an ensemble approach is employed to reduce model uncertainty and derive the ultimate current predictions and intervals. These predictions and intervals are then used in a comparative approach to automatically detect faults in circuit boards. Finally, the effectiveness of the proposed algorithm in improving the accuracy of fault detection is verified on experimental circuit boards.

Design of Compensation Topology for IPT System Considering Coils’ Parameters and Load Variations for CC or CV Output

The inductive power transfer (IPT) technology is drawing increasing attention. Variations in the height of the secondary coil are inevitable due to the fluctuations in the height of the electrical equipment or the pressure of the tires, which leads to variations in the coils’ parameters (self-inductances and mutual inductance). The coils’ parameters and load variations can dramatically affect the performance of the IPT system. In this paper, a unified mathematical model which can describe multiple compensation topologies is established. A design method is proposed to obtain suitable topology and component parameters based on the unified mathematical model and the non-dominated sorting genetic algorithm II. In addition, not only the stable output voltage/current is achieved, but the efficiency and cost are also improved. Finally, two experimental prototypes were built to verify the effectiveness, which has the output characteristics of constant current (3.5A/600W) and constant voltage (72V/100W), respectively. The results show that the output fluctuations are less than 5.63%, and the maximum efficiency is above 94.69% when the coils’ parameters (the primary self-inductance change from 85.76μH to 102.2μH, the secondary self-inductance change from 86.26μH to 102.35μH, and the mutual inductance change from 38.2μH to 72.1μH) and load (double change) vary.

Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles

Semi-insulating gallium arsenide (SI GaAs) detectors offer a promising alternative to commercially available silicon detectors. They demonstrate superior radiation hardness and provide improved efficiency for gamma and X-ray detection, primarily attributed to their higher density. In this study, we examined 350 μm thick SI GaAs detectors featuring front-side Ti/Pt/Au Schottky contacts with varying contact areas, complemented by back-side Ni/AuGe/Au ohmic contacts spanning the entire area. First, the reverse current-voltage characteristics of the prepared detectors were measured. The dependence of the reverse current and the breakdown voltage on the Schottky contact area was revealed. As the contact area decreases, the reverse current decreases and the breakdown voltage increases. The detection performance of the detectors was evaluated by alpha spectrometry using an 241Am source. After irradiation of the detectors from the Schottky electrode, the measured alpha spectra show an increasing CCE with decreasing Schottky contact area. Finally, the correlation between the applied bias voltage and the extent of the active detector area from the edge of the detector contact was investigated.

Strain-Modulated Electronic Transport Properties in Two-Dimensional Green Phosphorene with Different Edge Morphologies

Based on two-dimensional green phosphorene, we designed two molecular electronic devices with zigzag (Type 1) and whisker-like (Type 2) configurations. By combining density functional theory (DFT) and non-equilibrium Green’s function (NEGF), we investigated the electronic properties of Types 1 and 2. Type 1 exhibits an interesting negative differential resistance (NDR), while the current characteristics of Type 2 show linear growth in the current–voltage curve. We studied the electronic transport properties of Type 1 under uniaxial strain modulation and find that strained devices also exhibit a NDR effect, and the peak-to-valley ratio of device could be controlled by varying the strain intensity. These results show that the transport properties of green phosphorene with different edge configuration are different, and the zigzag edge have adjustable negative differential resistance properties.

Design of ammonia sensor based on ZnO for analyzing hazards at critical infrastructure

A gas sensor based on ZnO has been designed, which demonstrates sensitivity to NH3 under standard conditions (temperature, 25 °С; pressure, 101.3 kPa). The experimental sample was manufactured by magnetron sputtering at direct current. A VUP-5M vacuum unit with an original material-saving magnetron was used to produce ZnO films. To analyze the efficiency of the gas sensor to ammonia (NH3) under standard conditions, its operating characteristics were studied. The concentration of NH3 for investigating operating characteristics was chosen at the level of 25 ppm. To determine the resistivity of the contacts of the instrument structure, the current-voltage characteristics of the gas sensor were examined in the voltage range between −100 and +100 V. Based on the results of investigating the current-voltage characteristics, which have a linear character, the resistivity of the contacts was confirmed. To study the sensitivity of the gas sensor to the target gas, the change in resistance of the sensitive layer of the gas sensor under the influence of NH3 with a concentration of 25 ppm under standard conditions was explored. The study results demonstrated the high sensitivity of the gas sensor to the target gas – at the level of 229 relative units. The investigation of the response and recovery time of the gas sensor showed that the ZnO-based gas sensor has a response and recovery time of 20 and 26 s, respectively. The selectivity of the ZnO-based gas sensor was studied. The selectivity study was carried out by determining the sensitivity of the gas sensor in the presence of vapors of various gases, namely methanol, ethanol, acetone. The study results showed that the reaction to ammonia is selective compared to the reaction to other gases. The results of examining the working characteristics of the ammonia gas sensor demonstrate the high efficiency of its application under standard conditions and a low concentration of the target gas

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Boltzmann limit is inevitable in conventional MOSFETs, which prevent them to be used for low-power applications. Research in device physics can address this problem by selection of proper materials satisfying our requirements. Recently, 2D transition metal di-chalcogenide (TMD) materials are gaining interest because they help alleviate short-channel effects and DIBL problems. The TMD materials are composed by covalently bonded weak van der Waals (vdW) interaction and can be realized as hetero structures with 2D ferro-electric material CuInP2S6 at the gate stack. This paper demonstrates a vdW negative capacitance field effect transistor (NCFET) structure in TCAD and the design was validated for voltage-current Characteristics. Parametric analysis shows MoS2 with phenomenal on/off ratio, narrow hysteresis than the counterparts. Simulation shows that MoS2 vdW NCFET has a high transconductance of 2.36 µS µm−1. A steep slope of 28.54 mV dec−1 is seen in MoS2 vdW NCFET which promises the performance of logic applications at a reduced supply voltage.

Highly stable, self-powered UV-Vis-NIR broadband isotype photodetector based on Ti-doped amorphous MoO3

Ti-doped MoO3 thin film was sputtered onto a n-Si substrate and the MoO3:Ti/n-Si heterojunction photodetector fabricated. The elemental composition and the morphological analyses of the MoO3 film have been carried out by EDX and SEM studies, respectively. The band gap of sputtered MoO3:Ti film was found to be 3.26 eV from UV-Vis spectra. The optical performance of the constructed device under visible light between 10 and 150 mW, under 365 nm and 395 nm UV light and 850 nm NIR light was examined in detail with the help of current-voltage (I-V) characteristics. From the analysis of the experimental I-V characteristics of the MoO3:Ti/n-Si heterojunction photodetector, the largest responsivity values were determined as 0.41 A/W in visible light of 10 mW/cm2, 2.03 A/W under UV light of 365 nm and 0.67 A/W for 850 nm NIR light, respectively. Furthermore, the largest specific detectivity values were calculated as 3.21×109 Jones in visible light (10 mW/cm2), 1.61×1010 Jones, under UV light of 365 nm, and 3.21×109 Jones, respectively. Repeated measurements after 30 days showed that the device was quite stable both in the dark and in a broadband.

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

Hole-tunneling Si0.82Ge0.18/Si asymmetric triple-barrier (TB) resonant tunneling diodes (p-RTDs) were created by sputter epitaxy instead of conventional chemical vapor phase epitaxy. As a result, a peak current density (PCD) of 297 kA/cm2 with a peak-to-valley current ratio of 7.3 was recorded at room temperature. The observed high planarity of the films grown by sputter epitaxy is also considered one of the factors behind the high PCD. From the results of self-consistent theoretical calculations of current–voltage characteristics using box-shaped potentials as a first approximation and considering space charge effects of quantum wells, heavy-hole-to-heavy-hole and light-hole-to-light-hole state transitions under the tunneling conditions of the TB potential structure applied in this study were found to be inherent current paths. Moreover, the light and heavy hole currents contribute almost equally to the overall device current, resulting in a theoretical PCD of 637 kA/cm2, which is close to the experimental result. Further analytical simulations with adjusted series resistance and thickness of the nondoped layer allowed the alignment of the theoretically obtained PCD voltage position with the experimentally obtained one. Thus, the theoretical and analytical calculations explain the operation mechanisms of SiGe/Si p-RTDs, and the proposed fabrication method using our sputter epitaxy method is very useful for the actual production of high-PCD SiGe/Si p-RTDs operating at room temperature.

Comparative performance analysis of poly (3-hexylthiophene-2, 5-dial) and [6,6]-phenyl-C61 butyric acid methyl ester-based organic solar cells in bulk-heterojunction and bilayer structure using SCAPS

This work is concerned with the design and photovoltaic performance study of organic semiconducting materials-based solar cells using a SCAPS simulator. Organic solar cells are one form that absorbs light and produces electricity. They exhibit high power conversion efficiency, low manufacturing costs, lightweight, and flexibility which makes them a promising technology for renewable energy. We developed and designed organic solar cell devices with the structure ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bulk-heterojunction structure and ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bilayer structure where PEDOT: PSS and PFN-Br were used as hole and electron transporting layers (HTL and ETL) respectively. The short circuit current density versus voltage (J-V) characteristics as well as photovoltaic parameters namely open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE) have been examined. In addition, the quantum efficiency (QE) of the two structures has been also studied. The effectiveness of the photovoltaic simulated systems has also been attempted to be enhanced by varying the absorber layer's thickness for both architectures. Later, this turned out that variations in the band gap of the absorber layer had an impact on the factors that determined how well solar cells performed. It has been found that the simulated bulk-heterojunction device exhibits 20.43% PCE whereas 3.52% PCE has been calculated from the simulated bilayer device.

Role of substrate temperature on the performance of BaTiO3/Si photodetector prepared by pulsed laser deposition

In this study, the pulsed laser deposition (PLD) method was employed to fabricate nanostructured BaTiO3 films on glass and silicon substrates at varying temperatures. The structural analysis confirmed the formation of crystalline nanostructured BaTiO3 with mixed tetragonal and hexagonal phases, and the film deposited at 150 °C has the best crystallinity and largest particle size. The optical energy gap of the BaTiO3 nanostructure decreases from 3.94 to 3.84 eV, with increasing substrate temperature from 60 to 150 °C. Photoluminescence spectra of BaTiO3 films deposited at 25, 60, 100, and 150 °C exhibit emission peaks centered at 450, 512, 474, and 531 nm, respectively. Raman spectra of BaTiO3 films show E (LO), A (TO), E (LO) + TO, and B1 vibration modes. Hall measurements reveal that the mobility of the BaTiO3 film increases with temperature up to 100 °C and then decreases at 150 °C. The current–voltage characteristics of the BaTiO3/p-Si heterojunction, deposited over a temperature range of 25 to 150 °C, were investigated in the dark and under illumination. The heterojunctions exhibit rectifying properties, with the best rectification factor observed for the heterojunction prepared at 100 °C. The values of the ideality factor for the heterojunctions fabricated at 25, 60, 100, and 150 °C were 4.3, 3.8, 2.8, and 5, respectively. The study reveals an improvement in both the figures of merit and the photodetector performance with increased substrate temperature. The responsivity increases from 2.2 to 9.25 A/W as the deposition temperature rises from 25 to 100 °C. The detectivity (D*) and external quantum efficiency (EQE) of the photodetector prepared at the optimum substrate temperature of 100 °C, were found to be 4.62 × 1012 Jones and 114%, respectively, at 500 nm.

Phase-field model of filament formation and growth in percolating memristive systems of nanoparticles

Based on the phase-field theory, a two-dimensional model describing the formation and growth of filaments in a system of conducting particles immersed in a dielectric matrix with active electrodes has been developed. We simulate and analyze the dynamics of redistribution of active substance, which undergoes reversible intercalation through the particle surface and forms conductive phase within the matrix. It has been demonstrated that the system exhibits hysteresis in current–voltage curves observed under conditions of sawtooth-like variation of the electrical current. In the proposed model, the primary mechanism for the formation and growth of filaments is the non-uniform distribution of conductivity throughout the system, resulting in the formation of a highly non-uniform electric field. This field may lead to the movement of fragments of the conductive phase, corresponding to the extraction of filaments from the particles or active electrodes. Experimental investigations of percolation network of silver nanoparticles in a HfOx dielectric matrix are presented. The practical use of the phase-field model is demonstrated, as it qualitatively reproduces the memristive dynamics observed in percolation ensembles of nanoparticles. The model takes into account the concurrent evolution of phases and the redistribution of electric voltages within the sample. The findings can have important implications for understanding and manipulating memristive behavior in nanoparticle-based systems with potential applications in neuromorphic computations.

Optical, conductive, and ferroelectric properties of the first layer of dip-coated BiFeO3 films from methoxyethanol and acetic acid-based chemical dissolvents

The overall performance of the multilayer resulting in a sol-gel bismuth ferrite (BiFeO3) film will be primarily determined by the properties of the first layer, but this has yet to receive much attention, even though chemical and morphological defects of this layer can accumulate as the number of layers increases. Here, we perform an optical, conductive, and ferroelectric study of first layer (L 1) dip-coating sol-gel BiFeO3 films using two routes that vary only in the dissolvent; the first one is based on 2-methoxyethanol (MOE), and the second one on acetic acid (AA) with some MOE (AA-MOE). Tauc plots reveal a band gap of 2.43 eV and 2.75 eV for MOE (30 ± 5 nm thick) and AA-MOE (35 ± 5 nm thick) films, respectively. MOE films showed a dielectric function with features at ∼2.5 eV, ∼3.1 eV, and ∼3.9 eV, which were associated with charge-transfer transitions, but such features are absent in AA-MOE films. Advanced atomic force microscopy techniques were used to identify the fine features or defects of the BiFeO3 films: The conductive maps show that the charge transport pathways in both film routes are controlled by nanometer defects rather than grain or grain boundary defects. Current-voltage curves reveal high conductive pathway at a lower voltage for the MOE films than for AA-MOE films. The piezoelectric coefficient for MOE films was ∼20% higher than AA-MOE films. Both deposition methods yield ferroelectric films with an electromechanical strain controlled by the piezoelectric effect and minimal contribution from electrostriction. An optimization for the AA-MOE-based route in the withdrawal speed results in a significant reduction of morphological defects and a more than twofold increase in the piezoelectric coefficient. Our results broaden the understanding of optical and ferroelectric BiFeO3 films based on a chemical solution by dip-coating.

Manipulation of bilayer MoS2-based MESFET with flexoelectric polarization field

We propose a bilayer MoS2-based metal-semiconductor field-effect transistor (MESFET) with the characteristic of mechanical modulation of its performance through flexoelectricity. The MESFET sample is fabricated with the bilayer MoS2 and the Si/SiO2 substrate as well as the gate electrode of Pt and the source/drain electrode of Ag/Au. The current-voltage relationships of the fabricated MESFET under the action of different gate voltages and tip forces as well as their combinations are measured with AFM. The tip force produces a strain gradient induced flexoelectric polarization field and thus changes the effective barrier height of Schottky contact. As a result, it can serve as an equivalent gate voltage, playing a significant tuning role in the performance such as transconductance and carrier mobility of the proposed MESFET. Within the drain-source voltage (VDS) range of 0–2 V, the maximum carrier mobility of the fabricated MESFET under the combined action of traditional gate voltage (VGS) and tip force reach 470 cm−2/(V∙s) significantly higher than that under VGS alone. The study provides valuable insights into the application of flexoelectricity in MESFET devices based on two-dimensional materials.