This is the first article of a series concerning the theoretical description of the current–potential and current–time profiles verified during electrochemical deposition of metals on n -silicon. Our goal is to derive an analytical expression that relates the deposition current to temperature, potential, concentration and potential scan rate – the macroscopic parameters, commonly used to control deposition experiments. In this paper we introduce a model that assumes the existence of two mechanisms to describe the nucleation and growth of the material deposited: the diffusion of ions and the catalytic reaction on the electrode. Analyzing the diffusion of ions into a finite electrochemical system and introducing the reaction kinetics through a time-dependent boundary condition, the model avoids the need for the depletion zone concept. A theoretical expression for current transients under diffusion-controlled growth, I ( c , k , t ), is obtained as a function of the ion concentration c , the parameter that regulates the surface activity and the time t . An analytical expression for the current is particularly convenient to investigate the connection between k , the theoretical parameter that regulates the reaction kinetics, and the potential, which plays the same role in real experiments. This relationship is obtained through a comparison between theoretical and experimental results.
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