Abstract
Faradaic current during anodic oxidation is measured over a relative humidityrange of 40–70% using an atomic force microscope with humidity control. Thelevel of detected current during the fabrication of oxide dots on H-passivatedSi(001) is in the picoampere (pA) level. Current flow began immediately (within afew milliseconds) after applying an oxidation voltage above a threshold valueand decreased with time according to oxide growth. The total charge resultingfrom the current flow was calculated by integrating the current–time curve andwas found to agree well with an estimation of expected current from the volumeof the fabricated oxide dots. Actual monitoring of the oxidation process by theFaradaic current is demonstrated during the fabrication of a two-dimensionallattice.
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