Cryogenic Low Noise Amplifier Research Articles

Fusion Design of Cryogenic Filtering Low-Noise Amplifier With High Out-of-Band Rejection Assisted by Grey Wolf Optimizer

Fusion Design of Cryogenic Filtering Low-Noise Amplifier With High Out-of-Band Rejection Assisted by Grey Wolf Optimizer

Q-band EPR cryoprobe

Following the success of cryogenic EPR signal preamplification at X-band, we present a Q-band EPR cryoprobe compatible with a standard EPR resonator. The probehead is equipped with a cryogenic ultra low-noise microwave amplifier and its protection circuit that are placed close to the sample in the same cryostat. Our cryoprobe maintains the same sample access and tuning which is typical in Q-band EPR, as well as supports high-power pulsed experiments on typical samples. The performance of our setup is benchmarked against that of existing commercial and home-built Q-band spectrometers, using CW EPR and pulsed EPR/ENDOR experiments to reveal a significant sensitivity improvement which reduces the measurement time by a factor of about 40× at 6 K temperature at reduced power levels.

Design and Analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for Superconducting Qubit Readout

This article proposes a cryogenic inverter-based low noise amplifier (LNA) for qubit readout. Its input impedance matching is realized by a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> on-chip gate inductor and capacitive load through the gate-to-drain feedback capacitance of the input transistors. Cascode transistors are used to optimize the impedance matching, which results in a larger gate inductor and smaller load capacitor and hence a higher passive and inverter gain. Owing to the high passive gain and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> -factor of the gate inductor at 4 K, the noise of the active stages is substantially suppressed with a negligible noise contribution of the gate inductor. Moreover, with the current re-use in the inverter topology, less power consumption is achieved for the given transconductance of transistors. The input impedance, gain, and noise analyses of the proposed LNA are performed for room temperature (RT) operation, and its noise optimization is done by taking the cryogenic operation of the devices into account. We demonstrate with the circuit analysis and measurement results that the input impedance of the LNA has a low sensitivity to variations on device parameters at cryogenic temperatures. The LNA is implemented in a 28 nm CMOS technology. It achieves 0.4–0.7 dB noise figure (NF) with 4.2 mW power consumption at 4 K, and its operating frequency is between 6–8 GHz. The LNA consumes very low power compared to the state-of-the-art cryogenic CMOS LNAs while providing similar NF performance at 4 K, which makes it suitable for dilution refrigerators.

High mobility Ge 2DHG based MODFETs for low-temperature applications

Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the charge carriers in the device channel. The Ge 2DHG is particularly interesting, since Ge exhibits the highest hole mobility among all semiconductors. In this paper, we report on the temperature-dependent direct current-characteristics of normally-on MODFETs based on a high mobility Ge 2DHG. Here, we specifically investigate device characteristics down to cryogenic temperatures and analyze the impact of different MOD-doping on device performance. We find that the largest On-Off ratio of and lowest sub-threshold swing (SS) of at a temperature of are attained for a MOD-doping of , while the highest effective mobility is obtained from a device with a MOD-doping of . Furthermore, while effective mobilities in the devices are strongly reduced compared to Hall mobilities measured in the unstructured Ge 2DHGs, both quantities can be seen to follow a similar trend. Our results motivate further investigations of Ge 2DHG MODFETs for applications in cryogenic low-noise amplifiers, besides their well-established potential for spintronic applications.

Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

X- and Q-band EPR with cryogenic amplifiers independent of sample temperature

Inspired by the success of NMR cryoprobes, we recently reported a leap in X-band EPR sensitivity by equipping an ordinary EPR probehead with a cryogenic low-noise microwave amplifier placed closed to the sample in the same cryostat [Šimėnas et al. J. Magn. Reson.322, 106876 (2021)]. Here, we explore, theoretically and experimentally, a more general approach, where the amplifier temperature is independent of the sample temperature. This approach brings a number of important advantages, enabling sensitivity improvement irrespective of sample temperature, as well as making it more practical to combine with ENDOR and Q-band resonators, where space in the sample cryostat is often limited. Our experimental realisation places the cryogenic preamplifier within an external closed-cycle cryostat, and we show CW and pulsed EPR and ENDOR sensitivity improvements at both X- and Q-bands with negligible dependence on sample temperature. The cryoprobe delivers signal-to-noise ratio enhancements that reduce the equivalent pulsed EPR measurement time by 16× at X-band and close to 5× at Q-band. Using the theoretical framework we discuss further improvements of this approach which could be used to achieve even greater sensitivity.

Entangled microwave photons generation using cryogenic low noise amplifier (transistor nonlinearity effects)

This article mainly focuses on important quantum phenomenon called entanglement arising the nonlinearity property. This study uses a unique approach in which transistor nonlinearity effect (third-order nonlinearity) entangled microwave photons are created in a cryogenic low-noise amplifier (LNA). For entanglement analysis, the Hamiltonian of the designed cryogenic LNA (containing two coupled oscillators) is derived, and then, using the dynamic equation of motion, the oscillator’s number of photons and the phase-sensitive cross-correlation factor are calculated in the Fourier domain to calculate the entanglement metric. The oscillators are coupled to each other through the gate–drain capacitor, and nonlinear transconductance is as an important factor strongly manipulating the entanglement. As a main conclusion, the study shows that the designed circuit using transistor third-order nonlinearity has the ability to generate the entangled microwave photons at very low intrinsic transconductance and more importantly when the noise figure (NF) is strongly minimized. As a complementary task, the printed circuit board of the cryogenic LNA is designed and simulated to verify the ability of the circuit to achieve an ultralow NF, by which the probability of the generation of entangled microwave photons is increased.

A high-Q superconducting toroidal medium frequency detection system with a capacitively adjustable frequency range >180 kHz.

We describe a newly developed polytetrafluoroethylene/copper capacitor driven by a cryogenic piezoelectric slip-stick stage and demonstrate with the chosen layout cryogenic capacitance tuning of ≈60 pF at ≈10 pF background capacitance. Connected to a highly sensitive superconducting toroidal LC circuit, we demonstrate tuning of the resonant frequency between 345 and 685kHz, at quality factors Q > 100 000. Connected to a cryogenic ultra low noise amplifier, a frequency tuning range between 520 and 710kHz is reached, while quality factors Q > 86 000 are achieved. This new device can be used as a versatile image current detector in high-precision Penning-trap experiments or as an LC-circuit-based haloscope detector to search for the conversion of axion-like dark matter to radio-frequency photons. This new development increases the sensitive detection bandwidth of our axion haloscope by a factor of ≈1000.

Chinese Deep Space Stations: A brief review [Antenna Applications Corner

To meet the rapidly growing needs of current and future deep space exploration missions, China has developed three deep space stations: Jiamusi and Kashi, (China), and Argentina (South America), for providing continuous telemetry, tracking, and command (TT&C), reliable communication, and precise navigation services. Integrated with state-of-the-art technologies, these three deep space stations are not only powerful for transmission but also extremely sensitive for receiving. Many remarkable innovations and achievements were made during the construction process, including the beam waveguide (BWG), adjustable subreflector, high-power transmitter, cryogenic low-noise amplifier (LNA), antenna-arraying technique, digital baseband receiver, and interferometry. This article briefly reviews the system architecture, general performance, critical system design issues, and contributions made by these Chinese deep space stations (CDSSs) during Chang’e missions.

Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

Cryogenic low-noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing. Consequently, the physical mechanisms governing the microwave noise figure are of practical interest. In particular, the magnitude of the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using Schottky thermometry. At temperatures ∼20 K, we observe a nonlinear trend of thermal resistance vs power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures.

Cryogenic Noise-Parameter Measurements: Recent Research and a Fully Automated Measurement Application

Since the conception of radio astronomy [1], researchers have been striving to develop a "zero-noise" broadband receiver. Although this goal has remained elusive, the pursuit of it has led to numerous low-noise circuit innovations [2], [3]. Perhaps the most notable of these innovations are cryogenic low-noise amplifiers (cryo-LNAs) [3]-[6] as this technology has been able to achieve the lowest noise levels to date. While references to cryogenic amplifiers in the literature date back to the early 1950s [7], they are still a subject of much interest among researchers. Cryo-LNAs were initially conceived of to address challenges in the fields of space exploration [8], [9] and radio astronomy [10]. More recently, researchers in other fields have become interested in "zero-noise" receivers, making this a topic of widespread interest among RF and microwave engineers.

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals are characterized as phase-modulated signals. To achieve broadband input matching impedance and low noise figure, the gate-to-drain capacitance of the input transistor is exploited. The goal is to involve a resistive and capacitive load into the input impedance match of a common-source stage with source inductive degeneration. The capacitive load is created by an LC parallel tank whose resonant frequency is lower than the operating frequency. The achieved non-constant in-band equivalent capacitance is proven to be beneficial to input impedance matching. The resistive part of the load is provided by the transconductance of the cascode stage implicitly. An inductor is added to the gate of the cascode transistor to suppress its noise, and a transformer-based resonator with two resonant frequencies serves as the load of the first stage, thus extending the operating bandwidth. Design considerations for the cryogenic temperature operation of the LNA are proposed and analyzed. The LNA achieves a measured gain ( $S_{21}$ ) of 35 ± 0.5 dB, return loss > 12 dB, and NF of 0.75–1.3 dB across the band (4.1–7.9 GHz), with 51.1-mW power consumption at room temperature, while it shows a measured gain of 42 ± 3.3 dB, and NF of 0.23–0.65 dB with 39-mW power consumption at 4.2 K between 4.6 and 8 GHz. To the best of our knowledge, this is the first report of a cryogenic LNA based on a bulk CMOS process working above 4 GHz showing sub-1-dB NF both at room and cryogenic temperatures.

Detecting telecom single photons with 99.5−2.07+0.5% system detection efficiency and high time resolution

Single photon detectors are indispensable tools in optics, from fundamental measurements to quantum information processing. The ability of superconducting nanowire single photon detectors (SNSPDs) to detect single photons with unprecedented efficiency, short dead time, and high time resolution over a large frequency range enabled major advances in quantum optics. However, combining near-unity system detection efficiency (SDE) with high timing performance remains an outstanding challenge. In this work, we fabricated novel SNSPDs on membranes with 99.5−2.07+0.5% SDE at 1350 nm with 32 ps timing jitter (using a room-temperature amplifier), and other detectors in the same batch showed 94%–98% SDE at 1260–1625 nm with 15–26 ps timing jitter (using cryogenic amplifiers). The SiO2/Au membrane enables broadband absorption in small SNSPDs, offering high detection efficiency in combination with high timing performance. With low-noise cryogenic amplifiers operated in the same cryostat, our efficient detectors reach a timing jitter in the range of 15–26 ps. We discuss the prime challenges in optical design, device fabrication, and accurate and reliable detection efficiency measurements to achieve high performance single photon detection. As a result, the fast developing fields of quantum information science, quantum metrology, infrared imaging, and quantum networks will greatly benefit from this far-reaching quantum detection technology.

Cryogenic Low-Noise Amplifiers: Noise Performance and Power Dissipation

Cryogenically cooled low-noise amplifiers (LNAs) have had a profound impact on experimental science. For instance, these amplifiers allow us to communicate with distant spacecraft, probe the history and composition of the universe through radio astronomy, study basic phenomena through low-temperature physics research, and read out the state of quantum systems as required for quantum computing. These devices-which can achieve noise performance within an order of magnitude of the fundamental limits imposed by quantum mechanics-find use from low frequencies through several hundreds of gigahertz. Without cryogenic LNAs, whole branches of experimental science simply could not exist.

Simulation of low-noise amplifier with quantized ballistic nanowire channel

The concept of a cryogenic low-noise amplifier (LNA) using quantized conduction in a 1D channel is proposed and explored through simulations. A MOSFET with a 1D channel (nanowire) will exhibit the formation of plateaus in the current due to sub-band quantization at temperatures of below about 100 K and low drive bias. Using a ballistic 1D top-of-the-barrier model, we show that the current plateaus significantly enhance the transconductance, enabling low noise and high gain at low DC power dissipation—key characteristics for LNA applications such as quantum computing. The results indicate that cryogenic 1D ballistic MOSFETs may offer a significant improvement in noise performance and power dissipation (40x reduction) over traditional devices for cryogenic applications with low input power, such as quantum computing.

A wideband cryogenic microwave low-noise amplifier.

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Cryogenic low-noise amplifiers for measurements with superconducting detectors.

We designed, implemented, and characterized differential amplifiers for cryogenic temperatures based on Si bipolar junction transistor technology. The amplifiers show high gain values of more than 60 dB at 300, 77, and 48 K. The minimum voltage noise spectral density was achieved at 77 K and corresponded to 0.33 nV/Hz0.5 with a flicker noise of 20 Hz. The maximum voltage gain was 70 dB at 77 K for a frequency range from DC to 17 kHz. We experimentally show that the parallel differential circuit design allows for a reduction of the voltage noise from 0.55 to 0.33 nV/Hz0.5 at 77 K.

InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of $112~\mu \text{W}$ . This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4–8 GHz (C–band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of $300~\mu \text{W}$ , the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of $112~\mu \text{W}$ , the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.

Broadband electrical action sensing techniques with conducting wires for low-mass dark matter axion detection

Due to the inverse Primakoff effect, it has been shown that when axions mix with a DC B→-field, the resulting electrical action will produce an AC electromotive force, which oscillates at the Compton frequency of the axion. As in standard electrodynamics, this electromotive force may be modelled as an oscillating effective impressed magnetic current boundary source. We use this result to calculate the sensitivity of new experiments to low-mass axions using the quasi-static technique, defined as when the Compton wavelength of the axion is greater than the dimensions of the experiment. First, we calculate the current induced in a straight conducting wire (electric dipole antenna) in the limit where the DC B→-field can be considered as spatially constant and show that it has a sensitivity proportional to the axion mass. Following this we extend the topology by making use of the full extent of the spatially varying DC B→-field of the electromagnet. This is achieved by transforming the 1D conducting wire to a 2D winding with inductance, to fully link the effective magnetic current boundary source and hence couple to the full axion induced electrical action (or electromotive force). We investigate two different topologies: The first uses a single winding, and couples to the effective short circuit current generated in the winding, which is optimally read out using a sensitive low impedance SQUID amplifier: The second technique uses multiple windings, with every turn effectively increasing the induced voltage, which is proportional to the winding number. The read out of this configuration is optimised by implementing a cryogenic low-noise high input impedance voltage amplifier. The end result is the realisation of new Broadband Electrical Action Sensing Techniques with orders of magnitude improved sensitivity over current low-mass axion experiments, with a sensitivity linearly proportional to the axion–photon coupling and capable of detecting QCD dark matter axions in the mass range of 10−12−10−8eV and below.

A 180-nm X-Band Cryogenic CMOS LNA

This letter presents the measurement results of a 180-nm complementary metal–oxide–semiconductor (CMOS) $X$ -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides $S_{11}$ and $S_{22}$ below −10 dB at both temperatures within 6.4–7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as −1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and −3 dBm IIP3. The presented work is the first implemented $X$ -band cryogenic CMOS LNA in the literature.