Coulomb Blockade Research Articles

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (∼30 nm) is much thinner than before (∼100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and 2e-periodic Coulomb blockade at zero magnetic field, a necessary step for future Majorana experiments. By reducing wire diameter, our work presents a promising route for reaching fewer sub-band regime in Majorana nanowire devices.

Extracting transport channel transmissions in scanning tunneling microscopy using superconducting excess current

Transport through quantum coherent conductors, such as atomic junctions, is described by conduction channels. Information about the number of channels and their transmissions can be extracted from various sources, such as multiple Andreev reflections, dynamical Coulomb blockade, or shot noise. We complement this set of methods by introducing the superconducting excess current as a new tool to continuously extract the transport channel transmissions of an atomic scale junction in a scanning tunneling microscope. In conjunction with ab initio simulations, we employ this technique in atomic aluminum junctions to determine the influence of the structure adjacent to the contact atoms on the transport properties.

Extremely low loading of carbon quantum dots for high energy density in polyetherimide nanocomposites

• Functionalized CQDs were synthesized, which showed monodispersity in solvent. • Coulomb-blockade effect of CQDs was utilized to increase the E b of PEI matrix. • The composite with 0.5 wt% CQDs exhibited a high U e of 10.66 J/cm 3 at 600 kV/mm. There is an urgent need for dielectric capacitors with high energy density and efficiency with the rapid progress of power electronic devices. Inorganic/organic composites were once considered as a potential candidate for dielectrics. However, the inevitable defects induced by the inorganic fillers always lead to the decreased breakdown strength and limited energy density and efficiency. In this work, carbon quantum dots (CQDs) with abundant functional groups were synthetized and introduced into linear dielectric polyethyleneimine (PEI) matrix. Due to the unique Coulomb-blockade effect of quantum dots, the movement of carriers can be hindered under the applied electric field, leading to the improvement of breakdown strength. Compared with most of the reported nanocomposites with high loading of fillers, the nanocomposites in this work with extremely low loading of CQDs exhibit obviously enhanced performance. The nanocomposite with 0.5 wt% CQDs exhibits a high discharge energy density of 10.66 J/cm 3 and efficiency of 88.3% at 600 kV/mm, corresponding to a 62.3% improvement over that of PEI (6.57 J/cm 3 at 490 kV/mm). This work provides an effective strategy to break down the long-standing contradiction between the enhancement of dielectric constant and the reduced in breakdown strength. The film dielectrics with extremely low loading of fillers contributing to enhanced energy density and high energy efficiency is very important for practical applications.

Revisiting Coulomb diamond signatures in quantum Hall interferometers

Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning gate parameters and the magnetic field, the diamonds are found to smoothly evolve to checkerboard patterns. To explain this surprising behavior, we put forward a model which relies on the presence of a nanometer-sized Fabry-P\'erot quantum Hall interferometer at the center of the constriction with tunable tunneling paths coupling the central part of the interferometer to the quantum Hall channels running along the device edges. Both types of signatures, diamonds and checkerboards, and the observed transition, are reproduced by simply varying the interferometer size and the transmission probabilities at the tunneling paths. The new proposed interpretation of diamond phenomenology will likely lead to revisit previous data, and opens the way towards engineering more complex interferometric devices with nanoscale dimensions.

Average electron number in two-island system

We studied the charge fluctuation in a two-metallic island system using a quantum Monte Carlo simulation. The imaginary-time path integral approach was used to express the system's grand canonical partition function. The average excess charge number on the islands was calculated using the distribution of the winding numbers. In the absence of a source-drain voltage, we found that an average electron number exhibited a Coulomb staircase phenomena and the function of the two gate voltages. Furthermore, as the temperature increased, the sharp step of the Coulomb staircase was smeared out. As a result, the system behaved as a single-electron box containing two coupled islands. We also suggest constructing a quantum stability diagram that accounts for the tunneling effect and temperature dependency from the average electron number. The calculation can be used to investigate the effect of the tunneling conductance on a honeycomb shape.

Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficiency of the source and hampering their scalable application in quantum networks. In this paper, we investigate and adjust the intermittence of the neutral exciton emission in a GaAs/AlGaAs quantum dot under two-photon resonant excitation of the neutral biexciton. We investigate the spectral and quantum optical response of the quantum dot emission to an additional wavelength tunable gate laser, revealing blinking caused by the intrinsic Coulomb blockade due to charge capture processes. Our finding demonstrates that the emission quenching can be actively suppressed by controlling the balance of free electrons and holes in the vicinity of the quantum dot and thereby significantly increasing the quantum efficiency by $30%$.

Heat rectification through single and coupled quantum dots

We study heat rectification through quantum dots in the Coulomb blockade regime using a master equation approach. We consider both cases of two-terminal and four-terminal devices. In the two-terminal configuration, we analyze the case of a single quantum dot with either a doubly-degenerate level or two non-degenerate levels. In the sequential tunneling regime we analyze the behaviour of heat currents and rectification as functions of the position of the energy levels and of the temperature bias. In particular, we derive an upper bound for rectification in the closed-circuit setup with the doubly-degenerate level. We also prove the absence of a bound for the case of two non-degenerate levels and identify the ideal system parameters to achieve nearly perfect rectification. The second part of the paper deals with the effect of second-order cotunneling contributions, including both elastic and inelastic processes. In all cases we find that there exists ranges of values of parameters (such as the levels’ position) where rectification is enhanced by cotunneling. In particular, in the doubly-degenerate level case we find that cotunneling corrections can enhance rectification when they reduce the magnitude of the heat currents. For the four-terminal configuration, we analyze the non-local situation of two Coulomb-coupled quantum dots, each connected to two terminals: the temperature bias is applied to the two terminals connected to one quantum dot, while the heat currents of interest are the ones flowing in the other quantum dot. Remarkably, in this situation we find that non-local rectification can be perfect as a consequence of the fact that the heat currents vanish for properly tuned parameters.

Suppressing Andreev Bound State Zero Bias Peaks Using a Strongly Dissipative Lead.

Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes that induce zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not sufficient evidence due to the ubiquitous presence of Andreev bound states. Here, we implement a strongly resistive normal lead in InAs-Al nanowire devices and show that most of the expected Andreev bound state-induced ZBPs can be suppressed, a phenomenon known as environmental Coulomb blockade. Our result is the first experimental demonstration of this dissipative interaction effect on Andreev bound states and can serve as a possible filter to narrow down the ZBP phase diagram in future Majorana searches.

Reduced Electron Temperature in Silicon Multi-Quantum-Dot Single-Electron Tunneling Devices.

The high-performance room-temperature-operating Si single-electron transistors (SETs) were devised in the form of the multiple quantum-dot (MQD) multiple tunnel junction (MTJ) system. The key device architecture of the Si MQD MTJ system was self-formed along the volumetrically undulated [110] Si nanowire that was fabricated by isotropic wet etching and subsequent oxidation of the e-beam-lithographically patterned [110] Si nanowire. The strong subband modulation in the volumetrically undulated [110] Si nanowire could create both the large quantum level spacings and the high tunnel barriers in the Si MQD MTJ system. Such a device scheme can not only decrease the cotunneling effect, but also reduce the effective electron temperature. These eventually led to the energetic stability for both the Coulomb blockade and the negative differential conductance characteristics at room temperature. The results suggest that the present device scheme (i.e., [110] Si MQD MTJ) holds great promise for the room-temperature demonstration of the high-performance Si SETs.

Non-equilibrium thermoelectric transport across normal metal–quantum dot–superconductor hybrid system within the Coulomb blockade regime

A detailed investigation of the non-equilibrium steady-state electric and thermoelectric transport properties of a quantum dot (QD) coupled to the normal metallic and s-wave superconducting reservoirs (N–QD–S) are provided within the Coulomb blockade regime. Using non-equilibrium Keldysh Green’s function formalism, initially, various model parameter dependences of thermoelectric transport properties are analysed within the linear response regime. It is observed that the single-particle tunnelling close to the superconducting gap edge can generate a relatively large thermopower and figure of merit. Moreover, the Andreev tunnelling plays a significant role in the suppression of thermopower and figure of merit within the gap region. Further, within the non-linear regime, we discuss two different situations, i.e., the finite voltage biasing between isothermal reservoirs and the finite thermal gradient in the context of thermoelectric heat engine. In the former case, it is shown that the sub-gap Andreev heat current can become finite beyond the linear response regime and play a vital role in asymmetric heat dissipation and thermal rectification effect for low voltage biasing. The rectification of heat current is enhanced for strong on-dot Coulomb interaction and at low background thermal energy. In the latter case, we study the variation of thermovoltage, thermopower, maximum power output, and corresponding efficiency with the applied thermal gradient. These results illustrate that hybrid superconductor–QD nanostructures are promising candidates for the low-temperature thermal applications.

Energy storage performance of sandwich structure composites with strawberry-like Ag@SrTiO3 nanofillers

Recent years witness a rapid surge in the research efforts on dielectric capacitors due to their high power density and fast charge/discharge speed. However, the relatively low energy density demands more efforts to meet the lightweight and compact requirement for practical applications. Here, we report sandwich-structured nanocomposite films with strawberry-like Ag@SrTiO3 nanofillers. The introduction of Ag nanoparticles (NPs) on SrTiO3 NPs could significantly improve dielectric properties, breakdown strength, energy storage density, and efficiency. As a result, a dramatically enhanced discharged energy density (24.6 J/cm3) and efficiency (86.3%) are reached in sandwich-structured nanocomposite films containing 1.5 wt% Ag@SrTiO3 nanofillers by the solution casting method. The enhancement of dielectric constant and breakdown strength of nanocomposite films is attributed to the Coulomb-blockade effect of Ag NPs, which inhibits the transformation of electrons. Our finite element simulation explicitly demonstrates that the Coulomb-blockade effect of Ag NPs can effectively improve energy storage performance, which therefore supports the experimental results.

Evidence for spin-polarized bound states in semiconductor–superconductor–ferromagnetic-insulator islands

We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.

Imaging the electrostatic landscape of unstrained self-assemble GaAs quantum dots

Unstrained GaAs quantum dots are promising candidates for quantum information devices due to their optical properties, but their electronic properties have remained relatively unexplored until now. In this work, we systematically investigate the electronic structure and natural charging of GaAs quantum dots at room temperature using Kelvin probe force microscopy (KPFM). We observe a clear electrical signal from these structures demonstrating a lower surface potential in the middle of the dot. We ascribe this to charge accumulation and confinement inside these structures. Our systematical investigation reveals that the change in surface potential is larger for a nominal dot filling of 2 nm and then starts to decrease for thicker GaAs layers. Using k · p calculation, we show that the confinement comes from the band bending due to the surface Fermi level pinning. We find a correlation between the calculated charge density and the KPFM signal indicating that k · p calculations could be used to estimate the KPFM signal for a given structure. Our results suggest that these self-assembled structures could be used to study physical phenomena connected to charged quantum dots like Coulomb blockade or Kondo effect.

Investigations of Optical Coulomb Blockade Oscillations in Plasmonic Nanoparticle Dimers

The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.

Thermal transport controlled by intra- and inter-dot Coulomb interactions in sequential and cotunneling serially-coupled double quantum dots

We study thermoelectric transport through a serial double quantum dot (DQD) coupled to two metallic leads with different thermal energies. We take into account the electron sequential and cotunneling effects via different master equation approaches. In the absence of intra- and inter-dot Coulomb interactions, a small peak in thermoelectric and heat currents is found for EL=ER indicating the Coulomb blockade DQD regime, where EL(ER) is the energy of the state of the left(right) quantum dot. In the presence of intra- and inter-dot Coulomb interactions with strengths Uintra, and Uinter, respectively, avoided crossings or resonance energies between the intra- and the inter-dot two-electron states, 2ES, are found. These resonances induce extra transport channels through the DQD leading to strong side peaks in the thermoelectric and heat currents at EL-ER=±(Uintra-Uinter) in addition to the main peak generated at EL=ER. The current side peaks are enhanced by increased strength of the Coulomb interactions. Interestingly, the current side peaks are enhanced when cotunneling terms are considered in which the resonances of the 2ESs assist the electron cotunneling process through the system. Furthermore, the issue of coherences is carefully checked in the DQD-leads system via different approaches to the master equation, which are the Pauli, the Redfield, a first order Lindblad, and the first- and second order von-Neumann methods. We realize that the Pauli method gives a wrong results for the thermoelectric transport when the role of the coherences is relevant.

All-solid-state SARS-CoV-2 protein biosensor employing colloidal quantum dots-modified electrode

Rapid and reliable detection of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) antibody can provide immunological evidence in addition to nucleic acid test for the early diagnosis and on-site screening of coronavirus disease 2019 (COVID-19). All-solid-state biosensor capable of rapid, quantitative SARS-CoV-2 antibody testing is still lacking. Herein, we propose an electronic labelling strategy of protein molecules and demonstrate SARS-CoV-2 protein biosensor employing colloidal quantum dots (CQDs)-modified electrode. The feature current peak corresponding to the specific binding reaction of SARS-CoV-2 antigen and antibody proteins was observed for the first time. The unique charging and discharging effect depending on the alternating voltage applied was ascribed to the quantum confinement, Coulomb blockade and quantum tunneling effects of quantum dots. CQDs-modified electrode could recognize the specific binding reaction between antigen and antibody and then transduce it into significant electrical current. In the case of serum specimens from COVID-19 patient samples, the all-solid-state protein biosensor provides quantitative analysis of SARS-CoV-2 antibody with correlation coefficient of 93.8% compared to enzyme-linked immunosorbent assay (ELISA) results. It discriminates patient and normal samples with accuracy of about 90%. The results could be read within 1 min by handheld testing system prototype. The sensitive and specific protein biosensor combines the advantages of rapidity, accuracy, and convenience, facilitating the implement of low-cost, high-throughput immunological diagnostic technique for clinical lab, point-of-care testing (POCT) as well as home-use test.

Schemes for Single Electron Transistor Based on Double Quantum Dot Islands Utilizing a Graphene Nanoscroll, Carbon Nanotube and Fullerene.

The single electron transistor (SET) is a nanoscale switching device with a simple equivalent circuit. It can work very fast as it is based on the tunneling of single electrons. Its nanostructure contains a quantum dot island whose material impacts on the device operation. Carbon allotropes such as fullerene (C60), carbon nanotubes (CNTs) and graphene nanoscrolls (GNSs) can be utilized as the quantum dot island in SETs. In this study, multiple quantum dot islands such as GNS-CNT and GNS-C60 are utilized in SET devices. The currents of two counterpart devices are modeled and analyzed. The impacts of important parameters such as temperature and applied gate voltage on the current of two SETs are investigated using proposed mathematical models. Moreover, the impacts of CNT length, fullerene diameter, GNS length, and GNS spiral length and number of turns on the SET’s current are explored. Additionally, the Coulomb blockade ranges (CB) of the two SETs are compared. The results reveal that the GNS-CNT SET has a lower Coulomb blockade range and a higher current than the GNS-C60 SET. Their charge stability diagrams indicate that the GNS-CNT SET has smaller Coulomb diamond areas, zero-current regions, and zero-conductance regions than the GNS-C60 SET.

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

We present capacitance–voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski–Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.

Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (<100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.

Grand canonical partition function of a serial metallic island system

We present a calculation of the grand canonical partition function of a serial metallic island system by the imaginary-time path integral formalism. To this purpose, all electronic excitations in the lead and island electrodes are described using Grassmann numbers. The Coulomb charging energy of the system is represented in terms of phase fields conjugate to the island charges. By the large channel approximation, the tunneling action phase dependence can also be determined explicitly. Therefore, we represent the partition function as a path integral over phase fields with a path probability given in an analytically known effective action functional. Using the result, we also propose a calculation of the average electron number of the serial island system in terms of the expectation value of winding numbers. Finally, as an example, we describe the Coulomb blockade effect in the two-island system by the average electron number and propose a method to construct the quantum stability diagram.