Growth Of Copper Films Research Articles

Transmission electron microscopy study of cluster growth of epitaxial and nonepitaxial copper films on muscovite mica

Copper was deposited simultaneously on vacuum cleaved mica and mica cleaved in dry or wet hydrogen with thickness ranging from 10 to 800 Å. After thinning of the mica substrates the cluster growth was studied quantitatively by transmission electron microscopy. It was found that the development of the films grown on gas cleaved mica (epitaxial) precedes the development of the films grown on vacuum cleaved mica (polycrystal). The results are interpreted in term of the kinetic nucleation theory.

Influence of hydrogen and water vapor on the oriented growth of copper on muscovite mica

The growth of continuous copper films deposited under UHV conditions onto mica substrates was studied. It was found that epitaxial films are only formed if the mica is cleaved in a gaseous atmosphere. The orientation of the films grown under these conditions corresponds to the smallest misfit between copper and mica. Furthermore, it was observed that an adsorption layer of water causes a twist of 30 deg in azimuthal orientation of the copper single-crystal film. This twisted azimuthal orientation is explained by the agreement of the symmetry of the copper monocrystal films with the water layer assumed to be adsorbed in ice structure on the mica substrate. No epitaxial growth was observed on vacuum-cleaved mica.

The growth and structure of thin copper films on (001) surfaces of nickel

Abstract The epitaxial growth of thin copper films on (001) surfaces of nickel in ultra-high vacuum has been investigated using Auger electron spectroscopy and electron microscopy. At room temperature, deposits tend to grow in layer-like fashion and are strained compressively to be coherent with the substrate up to a thickness of about 8 A. Above this thickness the elastic strain decreases with the introduction of misfit dislocations, but more rapidly than theories predict. At 300°C, copper grows by a Stranski–Krastenov mechanism.

The Reduction of Copper Oxides by Molecular Hydrogen

AbstractA study has been made of the growth of copper films obtained by the reduction with dry H2 of copper (I) oxide and mixed Cu(I), Cu(II) oxide layers formed on copper (100), (110), and (111) faces and on polycrystalline copper. It has been observed that while the orientations present in the copper(I) oxide layers were carried over to the metal films formed on reduction, Cu(II) oxide films, orientated or otherwise, always yielded polycrystalline copper.The different behaviours of the two oxides are related to the different configurations of copper ions in the crystal lattices of the two oxides and to the low mobility of copper atoms at the temperature of reduction (≈ 300°C).