Abstract
AbstractA study has been made of the growth of copper films obtained by the reduction with dry H2 of copper (I) oxide and mixed Cu(I), Cu(II) oxide layers formed on copper (100), (110), and (111) faces and on polycrystalline copper. It has been observed that while the orientations present in the copper(I) oxide layers were carried over to the metal films formed on reduction, Cu(II) oxide films, orientated or otherwise, always yielded polycrystalline copper.The different behaviours of the two oxides are related to the different configurations of copper ions in the crystal lattices of the two oxides and to the low mobility of copper atoms at the temperature of reduction (≈ 300°C).
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More From: Zeitschrift für anorganische und allgemeine Chemie
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