Abstract
The growth of continuous copper films deposited under UHV conditions onto mica substrates was studied. It was found that epitaxial films are only formed if the mica is cleaved in a gaseous atmosphere. The orientation of the films grown under these conditions corresponds to the smallest misfit between copper and mica. Furthermore, it was observed that an adsorption layer of water causes a twist of 30 deg in azimuthal orientation of the copper single-crystal film. This twisted azimuthal orientation is explained by the agreement of the symmetry of the copper monocrystal films with the water layer assumed to be adsorbed in ice structure on the mica substrate. No epitaxial growth was observed on vacuum-cleaved mica.
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