Conventional Ion Implantation Research Articles

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment.

Molybdenum disulfide (MoS2) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (VS) and p-type doping by nitrogen substitution in MoS2, controlled by the duration of NH3 plasma treatment. Our results reveal that NH3 plasma exposure of 20 s increases the 2D sheet carrier density (n2D) in MoS2 field-effect transistors (FETs) by +4.92 × 1011 cm-2 at a gate bias of 0 V, attributable to sulfur vacancy generation. Conversely, treatment of 40 s reduces n2D by -3.71 × 1011 cm-2 due to increased nitrogen doping. X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence analyses corroborate these electrical characterization results, indicating successful n- and p-type doping. Temperature-dependent measurements show that the Schottky barrier height at the metal-semiconductor contact decreases by -31 meV under n-type conditions and increases by +37 meV for p-type doping. This study highlights NH3 plasma treatment as a viable doping method for 2D materials in electronic and optoelectronic device engineering.

INFLUENCE OF DOPING WITH CARBON AND NITROGEN ON THE PHOTOACTIVITY OF TiO2 THIN FILMS OBTAINED WITH MePIIID

Titanium dioxide is well known as a photoactive material activated under ultraviolet irradiation. It is either employed as a photocatalyst or it exhibits superhydrophilic behavior after obtaining reduced surface energy under illumination used for self-cleaning or anti-fogging surfaces. For increasing the reactivity of thin films under solar illumination, a reduced band gap is desired. Doping with transition metals or nitrogen has been reported in the literature. However, the incorporation of nitrogen into a growing film is a much more complex process that is presently not completely understood. TiO2 thin layers were produced by metal plasma immersion ion implantation and deposition at room temperature at a pulse voltage of 0–5 kV and a duty cycle of 9 % for an apparently amorphous layer. An auxiliary rf plasma source was employed to increase the growth rate at low gas flow ratios. By adjusting the geometry between the incident ion beam, sputter target and substrate independently of the primary ion energy and species, a controlled deposition of samples was possible. Conventional ion implantation was employed to implant either carbon or nitrogen ions below the surface for bandgap engineering. The resulting thin films were subsequently investigated for optical properties, stoichiometry, structural properties, surface topography and photoactivity.

Isotopically Enriched Layers for Quantum Computers Formed by 28Si Implantation and Layer Exchange.

28Si enrichment is crucial for production of group IV semiconductor-based quantum computers. Cryogenically cooled, monocrystalline 28Si is a spin-free, vacuum-like environment where qubits are protected from sources of decoherence that cause loss of quantum information. Currently, 28Si enrichment techniques rely on deposition of centrifuged SiF4 gas, the source of which is not widely available, or bespoke ion implantation methods. Previously, conventional ion implantation into naturalSi substrates has produced heavily oxidized 28Si layers. Here we report on a novel enrichment process involving ion implantation of 28Si into Al films deposited on native-oxide free Si substrates followed by layer exchange crystallization. We measured continuous, oxygen-free epitaxial 28Si enriched to 99.7%. Increases in isotopic enrichment are possible, and improvements in crystal quality, aluminum content, and thickness uniformity are required before the process can be considered viable. TRIDYN models, used to model 30 keV 28Si implants into Al to understand the observed post-implant layers and to investigate the implanted layer exchange process window over different energy and vacuum conditions, showed that the implanted layer exchange process is insensitive to implantation energy and would increase in efficiency with oxygen concentrations in the implanter end-station by reducing sputtering. Required implant fluences are an order of magnitude lower than those required for enrichment by direct 28Si implants into Si and can be chosen to control the final thickness of the enriched layer. We show that implanted layer exchange could potentially produce quantum grade 28Si using conventional semiconductor foundry equipment within production-worthy time scales.

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon with ion pulses from a laser accelerator in the laser intensity range of 1019 W cm−2 and ion flux levels of up to 1022 ions cm−2 s−1, about five orders of magnitude higher than conventional ion implanters. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples locally pre-heated by high energy ions from the same laser-ion pulse. Silicon crystals exfoliate in the areas of highest energy deposition. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increases with high ion flux faster than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Intense ion pulses from a laser-accelerator drive materials far from equilibrium and enable direct local defect engineering and high flux doping of semiconductors.

Rethinking radiation effects in materials science using the plasma-focused ion beam

A new methodology for fundamental studies of radiation effects in solids is herein introduced by using a plasma Focused Ion Beam (PFIB). The classical example of ion-induced amorphization of single-crystalline pure Si is used as a proof-of-concept experiment that delineates the advantages and limitations of this new technique. We demonstrate both the feasibility and invention of a new ion irradiation mode consisting of irradiating a single-specimen in multiple areas, at multiple doses, in specific sites. This present methodology suggests a very precise control of the ion beam over the specimen, with an error in the flux on the order of only 1%. In addition, the proposed methodology allows the irradiation of specimens with higher dose rates when compared with conventional ion accelerators and implanters. This methodology is expected to open new research frontiers beyond the scope of materials at extremes such as in nanopatterning and nanodevices fabrication.

Enhanced anti-corrosion and biocompatibility of a functionalized layer formed on ZK60 Mg alloy via hydroxyl (OH-) ion implantation

Magnesium and its alloys have piqued the interest of researchers due to their promising mechanical properties and biocompatibility. Moreover, the excessively fast corrosion rate of Mg alloys impedes their development in biomedical fields. Inspired by conventional ion implantation, a less-toxic functional group (hydroxyl) is used as the ion source to bombard the ZK60 Mg alloy surface to form a functionalized oxide layer. The surface characterization, corrosion resistance, and biocompatibility are systematically investigated before and after hydroxyl ion implantation. A smoother surface mainly constituted of hydroxide/oxide is formed for the treated samples. The formed functionalized layer significantly improves the corrosion resistance of the ZK60 Mg alloy substrate and the proliferation of MC3T3-E1 cells, as demonstrated by electrochemical, immersion, and in vitro cytocompatibility tests. In summary, less-toxic functional ion implantation can be an effective strategy for preventing corrosion of Mg alloy implants and promoting their biocompatibility.

Doping Colloidal Quantum Dot Materials and Devices for Photovoltaics

Colloidal semiconductor nanocrystals have generated tremendous interest because of their solution processability and robust tunability. Among such nanocrystals, the colloidal quantum dot (CQD) draws the most attention for its well-known quantum size effects. In the last decade, applications of CQDs have been booming in electronics and optoelectronics, especially in photovoltaics. Electronically doped semiconductors are critical in the fabrication of solar cells, because carefully designed band structures are able to promote efficient charge extraction. Unlike conventional semiconductors, diffusion and ion implantation technologies are not suitable for doping CQDs. Therefore, researchers have creatively developed alternative doping methods for CQD materials and devices. In order to provide a state-of-the-art summary and comprehensive understanding to this research community, we focused on various doping techniques and their applications for photovoltaics and demystify them from different perspectives. By analyzing two classes of CQDs, lead chalcogenide CQDs and perovskite CQDs, we compared different working scenarios of each technique, summarized the development in this field, and raised our own future perspectives.

A study of the formation of isotopically pure 28Si layers for quantum computers using conventional ion implantation

We have investigated the use of conventional ion implantation to fabricate enriched 28Si layers for use in quantum computers. The final compositions of samples enriched using ultra-low energy (ULE) (800 eV and 2 keV) and low energy (20 keV) 28Si implants of varying fluences (1 × 1016–3.8 × 1017 cm−2) using two different implanters were measured using channelled Rutherford Backscattering Spectroscopy (RBS). The dynamic, binary collision approximation program TRIDYN was used to model the implantation profiles to guide the analysis of the RBS spectra. It was found that ULE implants achieved high 28Si enrichment levels but were heavily contaminated with oxygen due to poor vacuum in the implanter wafer end station. It was shown that oxidation could be reduced by using an accelerator with an end station with better vacuum and increasing the implant energy to 20 keV. However, TRIDYN simulations predict that the best 28Si enrichment levels that could be achieved under these conditions would saturate at ∼99.2% due to self-sputtering. We modelled a range of conditions with TRIDYN and so recommend low energies (<3 keV), ultra-high vacuum implantation for high 28Si enrichment (>99.9%) with the lowest possible fluences (∼5–10 × 1017 cm−2).

Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation

Ge n+/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n+/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 °C annealing, well-behaved Ge n+/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 °C annealing, best Ge n+/p junction performance with current on/off ratio ~9 × 105 and ideality factor ~1.07 is achieved by PIII.

Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation.

Development of n-/p-type semiconducting graphenes is a critical route to implement in graphene-based nanoelectronics and optronics. Compared to the p-type graphene, the n-type graphene is more difficult to be prepared. Recently, phosphorous doping was reported to achieve air-stable and high mobility of n-typed graphene. The phosphorous-doped graphene (P-Gra) by ion implantation is considered as an ideal method for tailoring graphene due to its IC compatible process; however, for a conventional ion implanter, the acceleration energy is in the order of kiloelectron volts (keV), thus severely destroys the sp2 bonding of graphene owing to its high energy of accelerated ions. The introduced defects, therefore, degrade the electrical performance of graphene. Here, for the first time, we report a low-damage n-typed chemical vapor deposition (CVD) graphene by an industrial-compatible ion implanter with an energy of 20 keV where the designed protection layer (thin Au film) covered on as-grown CVD graphene is employed to efficiently reduce defect formation. The additional post-annealing is found to heal the crystal defects of graphene. Moreover, this method allows transferring ultraclean and residue-free P-Gra onto versatile target substrates directly. The doping configuration, crystallinity, and electrical properties on P-Gra were comprehensively studied. The results indicate that the low-damaged P-Gra with a controllable doping concentration of up to 4.22 at % was achieved, which is the highest concentration ever recorded. The doped graphenes with tunable work functions (4.85-4.15 eV) and stable n-type doping while keeping high-carrier mobility are realized. This work contributes to the proof-of-concept for tailoring graphene or 2D materials through doping with an exceptional low defect density by the low energy ion implantation, suggesting a great potential for unconventional doping technologies for next-generation 2D-based nanoelectronics.

Deeper insight into lifetime-engineering in 4H-SiC by ion implantation

Lifetime-engineering in 4H-SiC is important to obtain a low forward voltage drop in bipolar devices with high blocking voltages above 10 kV. It is known that the implantation of carbon and subsequent thermal annealing can be used to improve the minority carrier lifetime of as-grown epitaxial layers due to annihilation of carbon vacancies and, therefore, reduce the lifetime limiting defect Z1/2. In this paper, the ion implantation of other ions (N, Al, B, and As) besides carbon and their impact on minority carrier lifetime and point defect concentration are shown. Special attention is paid to the effect of ion implantation with subsequent electrical activation by high temperature annealing. A strong influence of the implantation dose and, therefore, corresponding resulting doping concentration was found. A lifetime enhancement could be found for some implanted species for higher implantation doses whereas the detrimental effect of high temperature annealing dominated at low implantation doses. The results reveal that the implantation dose and the occupied lattice sites are important parameters to achieve a lifetime enhancement. A model is presented which explains the different impacts of various implanted ions and a more detailed understanding of lifetime-engineering by ion implantation. With this knowledge, it was possible to reduce the detrimental Z1/2 defect in a large part of thick epitaxial layers with conventional shallow ion implantation and high temperature annealing. Consequently, the minority carrier lifetimes of the epitaxial layers could be enhanced.

An In0.53Ga0.47As/In0.52Al0.48As Heterojunction Dopingless Tunnel FET With a Heterogate Dielectric for High Performance

In this paper, an In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As heterojunction dopingless tunnel field-effect transistor (HDL-TFET) with an HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> heterogate dielectric is proposed, where the N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -pocket with variable electron concentration can be formed by adjusting the length of source-side channel (LSC) based on the charge plasma concept, instead of employing conventional ion implantation or dual-material gate techniques. It aims to improve the device performance and simplify the device fabrication. At the drain bias of 0.3 V, numerical simulations show that the on-state current (ION) of the HDL-TFET with LSC = 4 nm can approach ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> A/μm that is far higher than that of the Si-DL-TFET (~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> A/μm), and the average subthreshold swing (SS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">avg</sub> ) can approach 36.6 mV/decade that is significantly lower than that of the Si-DL-TFET (89.2 mV/decade). It is also found that the drain-induced barrier lowering (DIBL) effect and the ambipolar current can be effectively suppressed in the HDL-TFET because of an existence of heterojunction. Under the condition of low gate and drain biases, the HDL-TFET exhibits peak values of the cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) and the maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) approaching 13 and 4.73 GHz, respectively, while the Si-DL-TFET yields those of 8.05 and 2.26 GHz, respectively, under relatively higher biases. It indicates that the HDL-TFET is a promising device for low-power consumption radio frequency applications.

Novel high-energy ion implantation facility using a 15 MV Tandem Van de Graaff accelerator

The implantation depths required for the development and fabrication of future generations of silicon carbide (SiC) semiconductor devices require ion energies that are well above the capabilities of most conventional ion implanters. To generate implantation profiles that extend from more than 10 μm to the surface of the wafer, a wide range of energy ions (kV to 10 s of MeV) is required. We developed a novel multi-energy implantation system that satisfies these requirements using heavy ion beams from one of the Brookhaven National Laboratory’s two 15 MV Tandem Van de Graaff accelerators. This system is described, including the dosimetry approach and the available ion species and intensities. Finally, an example of a measured implantation profiles in SiC is shown and compared to simulations.

Plasma processing of PDMS based spinal implants for covalent protein immobilization, cell attachment and spreading.

PDMS is widely used for prosthetic device manufacture. Conventional ion implantation is not a suitable treatment to enhance the biocompatibility of poly dimethyl siloxane (PDMS) due to its propensity to generate a brittle silicon oxide surface layer which cracks and delaminates. To overcome this limitation, we have developed new plasma based processes to balance the etching of carbon with implantation of carbon from the plasma source. When this carbon was implanted from the plasma phase it resulted in a surface that was structurally similar and intermixed with the underlying PDMS material and not susceptible to delamination. The enrichment in surface carbon allowed the formation of carbon based radicals that are not present in conventional plasma ion immersion implantation (PIII) treated PDMS. This imparts the PDMS surfaces with covalent protein binding capacity that is not observed on PIII treated PDMS. The change in surface energy preserved the function of bound biomolecules and enhanced the attachment of MG63 osteosarcoma cells compared to the native surface. The attached cells, an osteoblast interaction model, showed increased spreading on the treated over untreated surfaces. The carbon-dependency for these beneficial covalent protein and cell linkage properties was tested by incorporating carbon from a different source. To this end, a second surface was produced where carbon etching was balanced against implantation from a thin carbon-based polymer coating. This had similar protein and cell-binding properties to the surfaces generated with carbon inclusion in the plasma phase, thus highlighting the importance of balancing carbon etching and deposition. Additionally, the two effects of protein linkage and bioactivity could be combined where the cell response was further enhanced by covalently tethering a biomolecule coating, as exemplified here with the cell adhesive protein tropoelastin. Providing a balanced carbon source in the plasma phase is applicable to prosthetic device fabrication as illustrated using a 3-dimensional PDMS balloon prosthesis for spinal implant applications. Consequently, this study lays the groundwork for effective treatments of PDMS to selectively recruit cells to implantable PDMS fabricated biodevices.

The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source Doping

As dimension of bulk Si field-effect transistors scales down, novel techniques for impurity profile design at channel area are required because suppression of short-channel effects and improvement of on-state current is tradeoff in conventional ion implantation process. In this paper, we demonstrate p-type bulk Si fin field-effect transistors by using solid-source doping for better impurity profile in fin to weaken the tradeoff between suppression of short-channel effects and improvement of on-state current. In this paper, impurity profiles in fin with two different kinds of anneal conditions after fin revelation (1000 °C 30 s and 1050 °C spike) are analyzed, and the better impurity profile at channel area is designed by 1000 °C 30-s anneal for better electrical characteristics. The anneal condition with the better impurity profile in fin showsmobility improvement at long gate length ( $1~\mu \text{m}$ ) and short gate lengths (60, 70, and 80 nm); subthreshold slope and transconductance are improved at the same time. With those results, we conclude that a fabrication process flow of p-type bulk Si fin field-effect transistors to weaken the tradeoff between suppression of short-channel effects and improvement of on-state current is established with 1000 °C 30-s anneal after fin revelation by using solid-source doping. At the same time, electrical characteristics variation is also suppressed in the case of 1000 °C 30-s anneal.

Microwave plasma doping: Arsenic activation and transport in germanium and silicon

Microwave RLSA™ plasma doping technology has enabled conformal doping of non-planar semiconductor device structures. An important attribute of RLSA™ plasma doping is that it does not impart physical damage during processing. In this work, carrier activation measurements for AsH3 based plasma doping into silicon (Si) and germanium (Ge) using rapid thermal annealing are presented. The highest carrier concentrations are 3.6 × 1020 and 4.3 × 1018 cm−3 for Si and Ge, respectively. Secondary ion mass spectrometry depth profiles of arsenic in Ge show that intrinsic dopant diffusion for plasma doping followed by post activation anneal is much slower than for conventional ion implantation. This is indicative of an absence of defects. The comparison is based on a comparison of diffusion times at identical annealing temperatures. The absence of defects, like those generated in conventional ion implantation, in RLSA™ based doping processes makes RLSA™ doping technology useful for damage free conformal doping of topographic structures.

Electrically doped dynamically configurable field‐effect transistor for low‐power and high‐performance applications

The concept of an electrically doped dynamically configurable field-effect transistor (FET) is presented, which provides freedom to dynamically switch between a high-performance MOSFET and a low-power tunnel FET that can be ideal for complementary circuit implementation. The charge carrier concentration, polarity and conduction mechanism of the device are precisely controlled by the appropriate application of an external polarity control signal, instead of the conventional ion-implantation process. Two-dimensional TCAD simulation results confirm the dynamic configuration of the proposed device and good functionality agreement with existing devices as well as it having the requisite qualities for low-power and high-performance applications.

Plasma Doping of InGaAs at Elevated Substrate Temperature for Reduced Sheet Resistance and Defect Formation

Plasma doping (PLAD), a high-throughput ion implantation technique capable of achieving ultrashallow junctions and conformal doping of 3-D structures such as fin field-effect transistors, is investigated as an alternative to conventional beam-line ion implantation for InGaAs at advanced technology nodes. The PLAD at an elevated substrate temperature (ET-PLAD) is studied and reported for InGaAs for the first time. The ET-PLAD can give lower sheet resistance than room-temperature PLAD due to enhanced dopant incorporation. More crucially, an ET can help to prevent amorphization. After dopant activation anneal, residual corner defects are observed in small fins that are amorphized during plasma ion implantation, whereas fins that remain crystalline during plasma ion implantation are free of corner defects.

4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

ABSTRACT4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.

EFFECT OF IRRADIATION WITH PULSED ION BEAM ON THE MICROSTRUCTURE OF TiH 2

Titanium has long been of interest as hydrogen storage material since titanium has a high affinity to hydrogen isotopes. Titanium deuteride or tritide is an important nuclear material used in the field of nuclear technology. Investigations concerning hydrogen–titanium system seem to mainly focus on the hydrogen thermal desorption spectra so as to study hydrogen desorption kinetics from metal hydride and to determine the rate–controlling step, but little is known on the evolution of its compositional changes under a much more un–equilibrium condition. In the past two decades, the intense pulsed ion beam (IPIB) technique has received extensive attention as a tool for surface modification of materials. Compared with conventional ion implantation, IPIB irradiation into materials possesses a higher energy density with shorter pulse width and be typical of more intense thermal–mechanical effect. From such a point of view, considering the features of extreme high heating and cooling rate of IPIB, IPIB as a method to evaluate the stability characteristics of titanium hydride film is utilized in order to determine a predictable behavior of the film’s evolution under an extreme un–equilibrium external condition. In current study, TiH2 films irradiated by intense pulsed ion beam have been investigated by using scanning electronic microscopy, surface profilometer, X–ray diffraction and slow positron annihilation, in order to evaluate the effect of irradiation with pulsed ion beam on the microstructure of TiH2. Three sets of TiH2 films are irradiated several shots * D} <2bj ^SG 11205136 mlL-C : 2013–03–18, ml['-C : 2013–07–20 j3 : ℄ n, , 1987 W, %e DOI: 10.3724/SP.J.1037.2013.00122 1270 p ` AE x 49 * at energy density ranging from 0.1 J/cm to 0.5 J/cm. No noticeable phenomenon of melting and change of phase structures have occurred to samples under irradiation of 0.1—0.3 J/cm. However, phenomenon of melting and indication of cracking has been detected on the surface after energy density reaches 0.5 J/cm. Besides, desorption of hydrogen from the film, and a titanium hydride with a body centered tetragonal structure (bct), seldom reported by researchers and formed under extreme conditions, has also been identified only after energy density of IPIB reaches 0.5 J/cm. S parameter of slow positron annihilation reflects that the crystal defect structures have been greatly changed by IPIB irradiation, in which S parameter reaches a large value at 0.3 J/cm with 1 shot, while a small one at 0.5 J/cm with 5 shots.