Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation

Abstract

Ge n+/p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n+/p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 °C annealing, well-behaved Ge n+/p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 °C annealing, best Ge n+/p junction performance with current on/off ratio ~9 × 105 and ideality factor ~1.07 is achieved by PIII.