INFLUENCE OF DOPING WITH CARBON AND NITROGEN ON THE PHOTOACTIVITY OF TiO2 THIN FILMS OBTAINED WITH MePIIID

Abstract

Titanium dioxide is well known as a photoactive material activated under ultraviolet irradiation. It is either employed as a photocatalyst or it exhibits superhydrophilic behavior after obtaining reduced surface energy under illumination used for self-cleaning or anti-fogging surfaces. For increasing the reactivity of thin films under solar illumination, a reduced band gap is desired. Doping with transition metals or nitrogen has been reported in the literature. However, the incorporation of nitrogen into a growing film is a much more complex process that is presently not completely understood. TiO2 thin layers were produced by metal plasma immersion ion implantation and deposition at room temperature at a pulse voltage of 0–5 kV and a duty cycle of 9 % for an apparently amorphous layer. An auxiliary rf plasma source was employed to increase the growth rate at low gas flow ratios. By adjusting the geometry between the incident ion beam, sputter target and substrate independently of the primary ion energy and species, a controlled deposition of samples was possible. Conventional ion implantation was employed to implant either carbon or nitrogen ions below the surface for bandgap engineering. The resulting thin films were subsequently investigated for optical properties, stoichiometry, structural properties, surface topography and photoactivity.