Color center has shown great potential in optical data encryption due to its tunable optical performance. In this work, precise and controllable implantation of color centers within 4H-SiC wafers has been demonstrated by spatiotemporal tailored ultrafast laser irradiation. Distinct microstructures via micro-ablation, micro-cracking and internal phase transformation can be achieved by precisely regulating the spatial energy input in SiC wafer. The orientation of generated microstructures can be accurately controlled by tuning the laser polarization directions. Those color centers can be further customized by varying the defocusing distances and pulse durations. Wherein, nanoscale amorphous carbon layer with thickness ~ 100 nm was achieved by ultrafast laser induced internal phase transformation, which was ascribed to an enhanced near-field optical effect. Due to the thin-film interference, various colors can display from pink to light-green in those laser modified samples with different carbon nanolayer depths. With the highly flexible and precise modification in SiC crystal, multiple colors can therefore be implanted to encode optical information at small scale, allowing high density and complex information storage. This represents a significant advance in controlled phase transformation for nanoscale color centers fabrication, which is promising in multiple optical data encryption.
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