Metal Contacts Research Articles

Bismuth as a buffer layer for metal contact with silicon carbide studied by In situ photoelectron spectroscopy

Silicon carbide (SiC) is a promising third-generation semiconductor due to its wide bandgap. However, the high Schottky barrier and metal-induced gap states (MIGS) at the metal/SiC interface present significant challenges for device fabrication, leading to high contact resistance and poor current delivery. This study proposes the use of bismuth (Bi), with its semimetallic properties and gap-state saturation effect, as a contact buffer layer to address these issues. We conducted a systematic investigation of the chemical and electronic characteristics of the Pt/Bi/4H-SiC(0001) system, fabricated via molecular beam epitaxy (MBE), using in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). Our findings reveal weak bonding between the Bi buffer layer and the 4H-SiC(0001) surface, resulting in a slight downward band bending effect and the formation of a substantial dipole across the Bi/4H-SiC(0001) interface. Moreover, UPS spectra indicate a reduction in the work function of Pt/Bi/4H-SiC(0001), suggesting the potential for achieving low contact resistance. Notably, the Pt/Bi/4H-SiC(0001) system remains stable when exposed to 1.6×109 Langmuir of oxygen at room temperature, while a bare Bi buffer layer undergoes partial oxidation. These results provide a comprehensive understanding of the Pt/Bi/4H-SiC(0001) interfaces and strategies for improving metal/SiC contacts.

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells.

Thin polysilicon (poly-Si)-based passivating contacts can reduce parasitic absorption and the cost of n-TOPCon solar cells. Herein, n+-poly-Si layers with thicknesses of 30~100 nm were fabricated by low-pressure chemical vapor deposition (LPCVD) to create passivating contacts. We investigated the effect of n+-poly-Si layer thickness on the microstructure of the metallization contact formation, passivation, and electronic performance of n-TOPCon solar cells. The thickness of the poly-Si layer significantly affected the passivation of metallization-induced recombination under the metal contact (J0,metal) and the contact resistivity (ρc) of the cells. However, it had a minimal impact on the short-circuit current density (Jsc), which was primarily associated with corroded silver (Ag) at depths of the n+-poly-Si layer exceeding 40 nm. We introduced a thin n+-poly-Si layer with a thickness of 70 nm and a surface concentration of 5 × 1020 atoms/cm3. This layer can meet the requirements for low J0,metal and ρc values, leading to an increase in conversion efficiency of 25.65%. This optimized process of depositing a phosphorus-doped poly-Si layer can be commercially applied in photovoltaics to reduce processing times and lower costs.

Impact of Rh, Ru, and Pd Leads and Contact Topologies on Performance of WSe2 FETs: A First Comparative Ab Initio Study.

2D field-effect transistors (FETs) fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for the silicon-based CMOS. However, the lack of advancement in p-type contact is also a key factor hindering TMD-based CMOS applications. The less investigated path towards improving electrical characteristics based on contact geometries with low contact resistance (RC) has also been established. Moreover, finding contact metals to reduce the RC is indeed one of the significant challenges in achieving the above goal. Our research provides the first comparative analysis of the three contact configurations for a WSe2 monolayer with different noble metals (Rh, Ru, and Pd) by employing ab initio density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. From the perspective of the contact topologies, the RC and minimum subthreshold slope (SSMIN) of all the conventional edge contacts are outperformed by the novel non-van der Waals (vdW) sandwich contacts. These non-vdW sandwich contacts reveal that their RC values are below 50 Ω∙μm, attributed to the narrow Schottky barrier widths (SBWs) and low Schottky barrier heights (SBHs). Not only are the RC values dramatically reduced by such novel contacts, but the SSMIN values are lower than 68 mV/dec. The new proposal offers the lowest RC and SSMIN, irrespective of the contact metals. Further considering the metal leads, the WSe2/Rh FETs based on the non-vdW sandwich contacts show a meager RC value of 33 Ω∙μm and an exceptional SSMIN of 63 mV/dec. The two calculated results present the smallest-ever values reported in our study, indicating that the non-vdW sandwich contacts with Rh leads can attain the best-case scenario. In contrast, the symmetric convex edge contacts with Pd leads cause the worst-case degradation, yielding an RC value of 213 Ω∙μm and an SSMIN value of 95 mV/dec. While all the WSe2/Ru FETs exhibit medium performances, the minimal shift in the transfer curves is interestingly advantageous to the circuit operation. Conclusively, the low-RC performances and the desirable SSMIN values are a combination of the contact geometries and metal leads. This innovation, achieved through noble metal leads in conjunction with the novel contact configurations, paves the way for a TMD-based CMOS with ultra-low RC and rapid switching speeds.

Investigation of the effects of coating numbers of thin films and metal contact type on physical properties of undoped ZnO, Fe-doped ZnO, and Fe–B co-doped ZnO thin films

This study was designed for three purposes. The first objective was to examine the effects of iron (Fe) and boron (B) elements on the physical properties (structural, electrical, optical, and optoelectronic) of zinc oxide (ZnO) material. For this reason, pristine ZnO, 6% Fe-doped ZnO (Zn0.94Fe0.06O), and 6% Fe-4% B co-doped ZnO (Zn0.90Fe0.06B0.04O) thin films with different thicknesses (4, 6, 8, and 10 layers of coatings for each sample type) were produced using sol–gel dip coating and spraying method on glass and silicon (Si) substrates. In the second stage, we examined the effects of film thickness on optical, electrical, and optoelectronic properties for these three sample types. In the final stage, the MIS (metal/interlayer/semiconductor) structures were created using the three groups of samples produced as interlayers. Gold (Au) was initially applied as the metal contacts in these MIS structures. We investigated optoelectronic and electrical properties such as ideality factor, barrier height, and series resistance for all samples with Au contacts. Afterward, aluminum (Al) contacts were coated on the sample that yielded the best results with Au contacts, and the same properties were re-examined, thereby determining the effects of the contact material, especially on optoelectronic properties. All samples were produced as pure and wurtzite ZnO polycrystalline with preferred orientation along the (002) plane. Although Hall measurement results indicated that all sample groups were n-type semiconductors, the carrier density decreased from − 7.5 × 1013 for pristine ZnO to − 8.7 × 1011 with Fe–B co-doping. The irregular nanodots-shaped surface morphology of ZnO transformed into a homogeneous and smooth one by incorporating boron into the structure. In all sample groups except the 6% Fe-doped ZnO thin films, the band gaps of the thin films decreased as the film thickness increased. For pure ZnO and Fe-B co-doped ZnO sample groups, the band gap energy decreased from 3.245 to 3.215 eV, and from 3.540 to 3.180 eV, respectively, depending on the thicknesses of films. On the other hand, the band gap energy of only Fe–doped ZnO samples increased from 3.34 eV to 3.46 eV. It was observed that as the thicknesses of films increased, the ideality factor of Au/ZnO/p-Si, Au/Zn0.94Fe0.06O/p-Si, and Au/Zn0.90Fe0.06B0.04O/p-Si diodes increased, and the barrier heights of them decreased in the three sample groups. However, when we look at the average value of the electrical properties including all layers, we can say that the best results were obtained for the Fe–B co-doped sample group. Specifically, Fe–B co-doped ZnO sample with 6 layers of coating exhibited an ideality factor of 3.25, a barrier height of approximately 0.51 eV, and a serial resistance of 8.42 kΩ. The best performance as solar cell and photodiode was again obtained for this sample. While the solar cell efficiency of this sample (6 layers of coated Zn0.90Fe0.06B0.04O) was 0.04% with Au contacts, it increased to 0.08% with Al contacts.In summary, it was observed that the electrical, optical, structural, and optoelectronic (as solar cell and photodiode) properties of ZnO material were improved very well made with Al contact and 6 layers of coated Fe and B co-doping. Therefore, Zn0.90Fe0.06B0.04O sample may be promising material for optoelectronic devices.

The transport mechanism and barrier height inhomogeneity in Ag-ZnSnN2 Schottky barrier solar cells

To address the difference between the barrier height and the open circuit voltage of ZnSnN2 Schottky barrier solar cells prepared with Ag as the contact metal by sputtering deposition, the temperature-dependent current (I)-voltage (V) curves at darkness are studied. The IV properties are found to be controlled by the Schottky junction with thermionic emission as the major transport mechanism. The Schottky barrier height is inhomogeneous and obeys a double Gaussian distribution in different temperature ranges, very possibly due to the spatial structural inhomogeneity of the Ag-ZnSnN2 interface. Barrier height inhomogeneity results in positive temperature coefficient while the temperature coefficient of the bandgap remains negative. The linear relation between barrier height and ideality factor suggests that the IV curves also agree with the pinch off model.

Development of a wear coefficient equation for the A A7075-B4C composite – steel interface

In this research, an attempt was made to develop a wear equation for specific wear regimes that differs with temperature, sliding velocity, applied load, and sliding distance. The experimental runs were designed with the L25 Taguchi orthogonal array, and the uniform dispersion of reinforcement was confirmed using a scanning electron microscope. The presence of reinforcement hinders dislocation movement led to an augmentation in the composites’ hardness, while an elevation in temperature resulted in a decline in hardness due to the reduction of Pierls stresses. Owing to the formation of a Mechanical Mixed Layer (MML), the wear rate decreases with addition of volume fraction of B4C particles until 7.5%, beyond this MML break down and wear rate transit from mild to severe due to the direct metal contact. At 50 °C, the wear mode was abrasive and delamination; at 150 °C, it was abrasive plastic deformation; and at 250 °C, it was plastic flow of materials. Grooves, micro pits, micro cracks, ploughing and resolidified material were the distinct feature observed on the worn surface morphology. The modified wear equation was developed by incorporating reinforcement effect, specific wear regimes, temperature-dependent factors, and functional parameters.

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure

The resonance enhanced InAs/GaSb type-II Superlattices (T2SLs) infrared detectors with diffraction rings is designed, and the photoelectric characteristics are calculated and studied in this paper. The diffraction rings are designed on the top surface of T2SLs detector to control the incident light inside the device by forming the resonant cavity. We designed the structure of the conventional PIN InAs/GaSb T2SLs photodetector, calculated the energy band structure of the absorption layer, and analyzed the influence of the thickness of the absorption layer on the photoelectric performance. It is proved that blindly increasing the thickness of the absorption layer cannot effectively improve the device performance. We further studied the quantum efficiency (QE) and electric field distribution of the device after adding the diffraction ring structure. The results show that the structure with diffraction rings can significantly improve the QE of the photodetector without increasing the dark current. The interaction between the diffraction ring and the metal contact layer will enhance the localization of the electric field and further increase the light absorption between the semiconductor layers.

High-speed carbon nanotube photodetector based on a planarized silicon waveguide

The integration of silicon waveguides with low-dimensional materials with excellent optoelectronic properties can enable compact and highly integrated optical devices with multiple advantages for multiple fields. A carbon nanotube (CNT) photodetector integrated on the silicon waveguide has the potential to meet on-chip high-speed optical interconnection systems, based on the outstanding properties of CNTs such as picosecond-level intrinsic photoresponse time, high charge carrier mobility, broad spectral response, high absorption coefficient, and so on. However, the thermal stability of the device may be compromised due to the local suspension in the channel for the height difference between the WG and the substrate. Here, we report a low-cost and low-optical-loss method to achieve the planarized silicon waveguide. After that, the CNT photodetectors integrated on the original and planarized waveguide with asymmetric palladium (Pd)-hafnium (Hf) metal contacts are fabricated. The influence of this planarization method on the performance of devices is analyzed via comparing the dark leakage current, the leakage current rectification ratio (CRR), the series resistances (R S ), and the photoelectric response. Finally, a CNT photodetector based on the planarized waveguide with a photocurrent (Iph) ∼510.84nA, a photoresponsivity (R I ) ∼51.04mA/W, the dark current ∼0.389µA, as well as a 3 dB bandwidth ∼34GHz at the large reverse voltage −3V is shown.

Anisotropic charge transport at the metallic edge contact of ReS2 field effect transistors

The in-plane anisotropy of electrical conductance in two-dimensional materials has garnered significant attention due to its potential in emerging device applications, offering an additional dimension to control carrier transport in 2D devices. However, previous research has primarily focused on the anisotropy within electrical channel, neglecting the significant impact of anisotropic electrical contacts of 2D materials. Here, we investigate anisotropic charge transport at the metal contacts of hBN-encapsulated ReS2 using edge-contacted Field Effect Transistors. We observed the marked difference in contact resistance between the cross-b and b directions, suggesting that charge transport from the metal to ReS2 is more efficient along the b direction. This difference in efficiency results in a substantial contact anisotropy, reaching ~70 at 77 K. Our findings indicate that the measured Schottky Barrier Height along the b direction is ~35 meV, which is smaller than along the cross-b direction. Moreover, the tunneling probability along the b direction is two times larger than along the cross-b direction. Our results indicate that both Schottky Barrier Height and tunneling amplitude are the primary contributors to the high contact anisotropy of ReS2. This work provides a valuable guideline for understanding how in-plane orientation influences charge transport at metallic contacts in 2D devices.

Optimizing the metallization process for high fill factor of n-type crystalline silicon TOPCon solar cells

The primary challenge in solar cell manufacture concerning the metallization process is the need to achieve a balance between the electrical and optical performance of the metal contacts as the contribute to shading and the series resistance (Rs) of solar cells. Addressing these challenges with the optimization of the metallization process is crucial for achieving a high fill factor (FF) in solar cells, as FF is a key parameter indicating the quality and efficiency of a solar cell. An impact of different snap-off, distances between mask and cells, of n-type TOPCon (Tunnel Oxide Passivated Contact) solar cells during the screen-printing process was conducted. This experiment employs testing and analysis to determine the most effective snap-off distance that minimizes the Rs variability, resulting in an overall enhancement in cell efficiency. The smaller snap-off distance can lead to better performance in n-TOPCon solar cells due to finer lines, uniform contacts, and lower Rs. The I-V characteristics of 1.4 mm are Jsc of 39.58 mA/cm2, Voc of 684.63 mV, FF of 80.54 %, and power conversion efficiency (PCE) of 21.83 %, respectively. In addition, dark I-V measurement is essential for diagnosing performance issues; we got shunt resistance (Rsh) of 4.97 x 106 Ω which is the highest value that indicates minimal Rs of 0.3 Ω. As a result, it is a potential strategy for n-TOPCon solar cell improvements.

Second harmonic generation microscopy of electromechanical reshaping on corneal collagen

Refractive errors remain a global health concern, as a large proportion of the world's population is myopic. Current ablative approaches are costly, not without risks, and not all patients are candidates for these procedures. Electromechanical reshaping (EMR) has been explored as a viable cost-effective modality to directly shape tissues, including cartilage. In this study, stromal collagen structure and fibril orientation was examined before and after EMR with second-harmonic generation microscopy (SHG), a nonlinear multiphoton imaging method that has previously been used to study native corneal collagen with high spatial resolution. EMR, using a milled metal contact lens and potentiostat, was performed on the corneas of five extracted rabbit globes. SHG was performed using a confocal microscopy system and all images underwent collagen fibril orientation analysis. The collagen SHG signal in controls is uniform and is similarly seen in samples treated with pulsed potential, while continuous EMR specimens have reduced, nonhomogeneous signal. Collagen fibril orientation in native tissue demonstrates a broad distribution with suggestion of another peak evolving, while with EMR treated eyes a bimodal characteristic becomes readily evident. Pulsed EMR may be a means to correct refractive errors, as when comparing its SHG signal to negative control, preservation of collagen structures with little to no damage is observed. From collagen fiber orientation analysis, it can be inferred that simple DC application alters the structure of collagen. Future studies will involve histological assessment of these layers and multi-modal imaging analysis of dosimetry.

Detection performance of flower-like hydrothermally synthesized ZnO in silicon-type photodetector

Zinc oxide (ZnO) is a versatile compound or metal oxide with a wide range of applications across various industries such as electronics, optoelectronics, and gas sensors, etc. A simple hydrothermal method was used to synthesize ZnO flower-like structures in this study. The synthesized ZnO structures were analyzed by x-ray diffractometer (XRD) and scanning electron microscope (SEM). We used ZnO structures as an interfacial layer for a Schottky-type silicon-based photodetector. While Au and Al metals were employed as metallic and ohmic contacts, respectively, p-Si was utilized as a semiconductor and substrate. Thus, Au/ZnO/p-Si sandwich was successfully fabricated and tested by current–voltage (I–V) measurements under dark and various light power illumination densities from 10 mW cm−2 to 150 mW cm−2 as well as the various wavelengths in the case of same power. The I–V characteristics were used to determine the diode and photodetection parameters. The fabricated heterostructure exhibited 77.51 mA W−1 responsivity, 1.30 × 1010 Jones specific detectivity, and 26.33% external quantum efficiency (EQE) values.

On Spontaneous Dispersion as a Cause of Microstratification of Metal Melts.

The phenomenon of spontaneous dispersion is considered as the cause of the microstratification of metal melts. In a microstratification melt, a violation of long-range order in the arrangement of atoms (LRO) is observed, which corresponds to a dispersed particle size of more than 2 nm. Microseparation occurs due to spontaneous dispersion upon contact of liquid and solid metal or the mixing of two liquid metals. The possibility of spontaneous dispersion was assessed using three different criteria: Volmer's cr iterion, Rehbinder's criterion and the diffusion rate criterion. The diffusion rate criterion was obtained on the basis of the theory of rate processes, which describes how diffusing atoms overcome the interphase boundary. It has been established that Al-Sn melts contain colloidal-scale particles (4 nm), and Al-Si and Al-Ge melts contain atomic-scale particles (0.1 nm). For a system with a continuous series of Cu-Ni solid solutions in dispersion (Cu10Ni90-Cu20Ni80), the particle size is 2 nm. The particle size of the ternary eutectic GaInSn in the dispersion (Ga50In50-Ga50Sn50) is 5.6 nm, and the size of immiscible Cu-Fe melts in the dispersion (Cu80Fe20-Cu60Fe40) is 4.8 nm. Long-range order violations (LRO) and the presence of microlayering with colloidal particles larger than 20 nm were observed in the GaInSn ternary eutectic, in the Al-Sn simple eutectic with the preferential interaction of similar atoms, and in Cu-Fe melts with a monotectic phase diagram.

High‐Throughput Indirect Gravure Printing Applied to Low‐Temperature Metallization of Silicon‐Based High‐Efficiency Solar Cells

Herein, this work is dedicated to a both exotic and promising printing technique in silicon (Si) photovoltaics (PV). Indirect gravure printing is investigated as a metallization technique focusing on low‐temperature applications, such as Si heterojunction (SHJ) and perovskite Si tandem solar cells. One advantage of this rotary printing technique is that its components are very durable. From graphical industry, it is known that gravure cylinders show almost no wearing during multiple printing. Additionally, rotary printing techniques offer great throughput. Therefore, indirect gravure printing can reduce costs significantly in PV production. In this work, short process cycle times of 0.9 s cell−1 for industrial wafers (edge length of 156.75 mm) are demonstrated. Using an appropriate production platform even enables cycle times of down to 0.5 s cell−1. Busbarless SHJ half cells with non‐optimized gravure‐printed front grids reach a mean photoconversion efficiency that is (1.7 ± 0.5) %abs lower compared to screen‐printed reference samples, however, cycle time is reduced. The metal contacts exhibit a mean shading width of (65 ± 16) μm and an average height of (5 ± 1) μm. Applied to SHJ solar cells’ rear, such metallization can replace screen‐printed contacts with 0.1%abs efficiency loss only, as device simulations reveal.

Microcavity enhancement vs Auger recombination in variable thickness type-II superlattices in resonant cavity mid-infrared light emitting diodes

In this study, we investigate the tradespace between the improvement of mid-infrared light-emitting diode efficiency through microcavity enhancement vs reduction of Auger recombination for different W-superlattice thicknesses. Several sample designs are modeled and then grown and fabricated to test the tradespace at different W-superlattice thicknesses down to the quantum well limit. In a half-cavity, with a single reflector from the top metal contact, intermediate thickness W-superlattices gave the highest efficiencies, outperforming those in the W-quantum well limit across the entire measured current range. Experimentally, we report wallplug efficiencies of 0.4% for a room temperature 3.2 μm device. W-superlattices of intermediate thickness were also found to be optimal for a full-cavity device with a bottom distributed Bragg reflector added. The resonant full cavity did strongly improve the peak spectral radiance, with a measured increase of four to five times for a 3.6 μm device, and a value that is >250 times larger than previously reported.

Selective chemical doping of carbon nanotube conductors to reduce contact resistance with copper in ultrasonic welds

Electrochemical devices such as batteries, fuel cells, and capacitors employing a carbon nanotube (CNT) electrode can be improved by lowering the contact resistance between CNTs and metallic contacts. The current work investigates two simultaneous strategies to enhance the contact by using chemical doping of CNTs with potassium tetrabromoaurate (KAuBr4) and ultrasonic welding to a metal foil. The specific contact resistivity was measured using the transfer length method (TLM) to evaluate CNT test structures having ultrasonically welded Cu contacts with and without KAuBr4 doping. Purified CNT-Cu samples had a specific contact resistivity of 5.4 mΩ cm2, whereas the KAuBr4 doped CNT-Cu samples were 2.2 mΩ cm2. Confirmation of selective doping to the weld region was made using measured differences in the emissivity of purified and KAuBr4 doped CNTs, which were 0.84 and 0.56, respectively. The lower contact resistance from KAuBr4 doped CNT-Cu ultrasonic welds also reduced the extent of Joule heating beyond the contact region when applying increasing current to failure in a 2-terminal test structure. The benefit of selectively doped CNT-Cu welds was demonstrated across rectangular ribbon and electrode form factors up to an area of 6 cm × 8 cm (typical of electrochemical pouch-cell current collectors). Each form factor showed a 1.5× reduction in peak temperature when selective doping of the CNTs was performed prior to ultrasonic welding of the Cu contact. Thus, the combination of selective doping and ultrasonic welding demonstrates a viable method to fabricate low electrical resistance between CNT electrodes and metallic contacts for electrochemical devices.

Toward Gigahertz Photodetection with Transition Metal Dichalcogenides.

ConspectusTransition metal dichalcogenides (TMDCs) exhibit favorable properties for optical communication in the gigahertz (GHz) regime, such as large mobilities, high extinction coefficients, cheap fabrication, and silicon compatibility. While impressive improvements in their sensitivity have been realized over the past decade, the bandwidths of these devices have been mostly limited to a few megahertz. We argue that this shortcoming originates in the relatively large RC constants of TMDC-based photodetectors, which suffer from high surface defect densities, inefficient charge carrier injection at the electrode/TMDC interface, and long charging times. However, we show in a series of papers that rather simple adjustments in the device architecture afford TMDC-based photodetectors with bandwidths of several hundreds of megahertz. We rationalize the success of these adjustments in terms of the specific physical-chemical properties of TMDCs, namely their anisotropic in-plane/out-of-plane carrier behavior, large optical absorption, and chalcogenide-dependent surface chemistry. Just one surprisingly simple yet effective pathway to fast TMDC photodetection is the reduction of the photoresistance by using light-focusing optics, which enables bandwidths of 0.23 GHz with an energy consumption of only 27 fJ/bit.By reflecting on the ultrafast intrinsic photoresponse times of a few picoseconds in TMDC heterostructures, we motivate the application of more demanding chemical strategies to exploit such ultrafast intrinsic properties for true GHz operation in real devices. A key aspect in this regard is the management of surface defects, which we discuss in terms of its dependence on the layer thickness, its tunability by molecular adlayers, and the prospects of replacing thermally evaporated metal contacts by laser-printed electrodes fabricated with inks of metalloid clusters. We highlight the benefits of combining TMDCs with graphene to heterostructures that exhibit the ultrafast photoresponse and large spectral range of Dirac materials with the low dark currents and high responsivities of semiconductors. We introduce the bulk photovoltaic effect in TMDC-based materials with broken inversion symmetry as well as a combination of TMDCs with plasmonic nanostructures as means for increasing the bandwidth and responsivity simultaneously. Finally, we describe the prospects of embedding TMDC photodetectors into optical cavities with the objective of tuning the lifetime of the photoexcited state and increasing the carrier mobility in the photoactive layer.The findings and concepts detailed in this Account demonstrate that GHz photodetection with TMDCs is feasible, and we hope that these bright prospects for their application as next-generation optoelectronic materials motivate more chemists and material scientists to actively pursue the development of the more complicated material combinations outlined here.

Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer

Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal on the surface of the diode there is the potential to enhance its performance in some fields where the presence of metal is detrimental. To this end, SiC detectors with an epitaxially-grown graphene layer (EG), that substitutes the metallic contact, in the sensitive region were produced at IMB-CNM, profiting from the conductivity of the mono-atomic layer material. To isolate the effect of the graphene on the charge collection, samples without graphene were produced in parallel. In this paper, the effect of EG on Silicon Carbide p-in-n radiation detectors is studied in terms of charge collection with a radioactive source and by means of the transient current technique (TCT), which allows for position-dependent signal formation analysis. As a result of the former, we show the capability of the EG-SiC sensor for charge collection after signal integration, to a resolution close to that of a sensor fully metallised. Moreover, from the TCT studies, we observe uniform charge collection across the active region, as well as an up-to ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim $$\\end{document}40% transient amplitude damping which, compared with the ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim $$\\end{document}90% on the sample containing no metallic contact, proves that the presence of graphene benefits the performance of the device and that the technology is viable for radiation detection as an alternative to metal.

Tunable amorphous carbon films formed on ultralow wear, Pt–Au alloys

The mechanocatalytic formation of carbonaceous films at the interface between sliding metallic contacts is simultaneously advantageous for reducing friction and adhesion in several tribological applications and detrimental for electrical contacts as they can induce device failure by increasing the contact resistance. Yet, remarkably little is still known about the chemistry, structural and mechanical properties, and tunability of these interfacial layers. In this study, we performed contact pressure-dependent tribological experiments in dry nitrogen containing trace organics on four, nanocrystalline Pt–Au alloys ([Au] from 0 at.% to 10 at.%) – a promising class of alloys for ultralow wear and electrical contact applications. The ex-situ, multi-technique characterization results did not only provide insights into the chemical nature and mechanical behavior of the mechanocatalytic, carbon-rich films formed on Pt–Au surfaces, but also revealed the interplay between catalytic and mechanochemical tribofilm formation controlled by the composition-dependent electronic structure of the Pt–Au substrate and the applied contact pressure. The results of this work provide guidelines for tailoring nanocrystalline alloys to control their mechanocatalytic activity on the basis of variations of the alloy mechanical properties and element's electronic structure with the alloy stoichiometry.

Organic Electronics in Flexible Devices: Engineering Strategy, Synthesis, And Application

In recent years, flexible electronics have made significant strides, especially in organic light-emitting diodes, photovoltaics, thin-film transistors, integrated circuits, sensors, and memories. This study investigates the pivotal role of organic electronics in shaping flexible and wearable technology. It explores key aspects such as conductive polymers, small molecule organic semiconductors, and the use of organic dyes and pigments in displays, alongside synthesis techniques like polymerization and vapor deposition. These methods highlight advances in flexibility engineering and integration into wearable devices, enabling innovations like textile-integrated electronics and ultra-thin, skin-like interfaces. The discussion also covers synthesis and fabrication strategies, emphasizing cost-effective, solution-processing techniques for manufacturing electrodes, interconnects, and metal contacts on various flexible substrates. Advanced materials like graphene polymer composites, carbon-nanotube composites, and polymer-ceramic composites are investigated for enhancing stretchability and flexibility in device architectures. Furthermore, the paper examines the evolution of flexible devices, focusing on design strategies for flexibility and stretchability, innovative engineering polymers, composites, and device architectures, including 3D integration. Integration techniques in wearable devices, such as textile integration and skin-like electronics, are discussed, showcasing their transformative potential in applications like health monitoring devices, smart clothing, and wearable displays. Finally, the paper proposed solutions to address challenges such as durability, stability, scalability, and manufacturing efficiency, emphasizing the ongoing quest for improved materials and manufacturing processes. The conclusion underscores the transformative potential of organic electronics, envisioning a new era of wearable and flexible technology seamlessly integrated into daily life, revolutionizing our interactions with electronic devices.