Concentration Of In2O3 Research Articles

Fabrication of In2O3 doped PbO2 anode and its application for electrochemical degradation of norfloxacin in aqueous solutions

To improve the electrochemical activity and stability of PbO2 electrode, In2O3 particles were doped into β-PbO2 active layer by composite electrodeposition technology. When the In2O3 concentration in electrodeposition solution was 2 mM, the In2O3-PbO2 electrode had larger specific surface area, tighter crystal structure, higher oxygen evolution potential (2.09 V vs. SCE), smaller charge transfer resistance (64.32 Ω/cm2), stronger ability to generate hydroxyl radicals (0.213 μM/min) and thereby the better electrocatalytic activity and stability. In electrochemical oxidation of norfloxacin (NOR), the NOR removal rate at the In2O3-PbO2 anode was 1.388 times faster than that at pristine PbO2 electrode. Additionally, the effects of current density, initial pH, initial NOR concentration and electrolyte concentration on NOR removal efficiency were investigated by the principle of single variable. With the increase of current density and the decrease of initial NOR concentration, the NOR removal efficiency increased significantly; the better degradation effect was obtained under pH 3 and Na2SO4 concentration of 0.2 M. Finally, the degradation mechanism of NOR was discussed and five possible degradation pathways were proposed.

Fabrication, structural, optical, physical and radiation shielding characterization of indium (III) oxide reinforced 85TeO2-(15–x)ZnO-xIn2O3 glass system

This work aimed to evaluate the structural, optical, and physical features of several types of glasses based on 85TeO2-(15–x)ZnO-xIn2O3 (x = 2, 4, 6, and 8 mol%) system. As a result, five different samples were synthesized utilizing the melting-annealing technique. The Archimedes method was used to calculate the densities of the synthesized glasses. The structural, optical, physical, and radiation interaction characteristics of the sample were determined using XRD investigations, Raman spectra, and advanced modelling methods, producing optical band gap, refractive index, and Urbach energy values. The glass densities increased from 5.6091 g cm−3 to 5.6754 g cm−3 by increasing In2O3 reinforcement from 2 to 8 mol %. Urbach energies increased consistently from 0.1399 to 0.1439 eV as In2O3 concentration increased, apart from a drop to 0.1345 eV at x = 8. The optical transmittance and absorption characteristics altered nearly monotonically with increasing In2O3 ratios, showing that these characteristics may be estimated and controlled using In2O3 additive. By substituting ZnO with In2O3 within the structure, the optical band gap was dramatically enlarged. Additionally, at simulated energies greater than 0.02 MeV, the gamma-ray mass attenuation coefficient grows monotonically with In2O3 reinforcement. As a result, it can be stated that the high concentration In2O3 to TeO2–ZnO glass combination is a good synergetic tool for integrating structural, optical, and radiation properties.

Interaction Behaviour of Nanostructured In2O3 Thin Film Towards Nitric Oxide in Argon

“In-situ changes in the carrier concentrations of In2O3 thin film were measured as a function of temperature in argon and argon containing 25 ppm of NO using high temperature Hall measurement facility. Studies show that the charge carrier concentration of In2O3 in argon at 373 K is 5.4 × 1017 cm−3 which gets reduced to 1.5 × 1015 cm−3 in oxygen due to the strong electron withdrawing character of the adsorbed oxygen. 25 ppm of NO in argon drastically lowers the carrier concentration of In2O3 to 4.8 × 1016 cm−3 at 573 K from 6.1 × 1017 due to its higher electron withdrawing character. “The change in DC conductance during sensing is caused by the adsorption of NO in argon on In2O3 surface which is confirmed by the analysis of N 1s pattern.” Adsorption of NO increases charge depletion length (LD) for NO in argon to 25.9 nm at 573 K from its value of 2.3 nm for pure argon and the temperature dependence of LD for NO in argon is evaluated.”

Photoreforming driven by indium hydroxide/oxide nano-objects

In(OH)3/In2O3 nano-objects (plates and tubes) were prepared under controlled mild reaction conditions by simple basic thermal hydrolysis of 1-(2-methoxy-ethyl)-3-methyl imidazolium tetrachloro-indate (BMIOMe·InCl4) ionic liquid (IL). As the reaction temperature increased from 10 °C to 80 °C, there was not only an increase in concentration of In2O3 but the growth of nano-tubes (NTs) also increased. At 10 °C, 30 °C, 50 °C, and 80 °C, 25.2 ± 7 nm sized nanoplates (NPls), small nanotubes (26.6 ± 6 nm in length and 8 ± 2 nm in width), NTs with a length of 25.9 ± 6 nm, and larger nanotubes (49.2 ± 18 nm) were obtained, respectively. The surface concentration of In(OH)3 decreased with the augmentation of the reaction temperature (from 100% at 10 °C to 5.1% at 80 °C). The nano-objects displayed a band gap of 5.4 eV, which is in the range expected for photo-catalytic activity to generate hydrogen from alcoholic solutions. Remarkably, In(OH)3/In2O3 catalyst prepared at 30 °C revealed 3.72 μmol h−1 of rate of hydrogen with apparent quantum yield of 16.3%, yielding a total H2 productivity of 57.6 μmol (5.76 mmol/g) after 32 h. This is the most active semiconductor photocatalysts reported so far of bare indium-based. The presence of In2O3 inside the nano-tubes is also important for the photacatalytic activity of the In(OH)3 based semiconductor. The presence of the IL layer not only acts as a template to control the structure of the nano-objects, but its presence also induces H2 generation.

Characterization and NO2 gas sensing performance of CdO:In2O3 polycrystalline thin films prepared by spray pyrolysis technique

Polycrystalline CdO:In2O3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl2 and InCl3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV–visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In2O3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In2O3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO2) gas are also studied. The influence of the operating temperature and In2O3 concentration on the NO2 response were investigated. It is found that all films are sensitive to NO2 gas, and the ideal operating temperature for the film contented 20 vol% of In2O3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In2O3 thin film is discussed and attributed to electron transfer between the sensing element and NO2 molecules.

In2O3 sensitized disordered porous SnO2 aerogel with remarkable gas-sensing properties at room temperature

This study aimed at the preparation of In2O3 sensitized disordered porous SnO2 aerogel (In2O3/SnO2) gas-sensing material by a sol-gel hard template method, and tested its gas-sensing properties to NOx gas at room temperature. The remarkable gas-sensing material was achieved by doped In2O3 into disordered porous SnO2 aerogel. The SiO2 could catalyze the SnCl2·2H2O to form the sol-gel system when the Sn, In and Si sources were mixed in alcohol and water, the silicon templates were formed during the reaction, and the disordered porous In2O3/SnO2 aerogel composite was obtained when the silicon templates were removed. When the doped concentration of In2O3 was 0.1%, the composite exhibited the highest sensitivity and selectivity. For doping 0.1% In2O3 sample, when the NOx concentration was 100 ppm, the response reached 80.3%, the response time was only 2.0 s. The detection limit to NOx gas reached 0.08 ppm. The response of sample to NOx was much higher than the same concentration other gases (NH3, H2, O2 and N2). The gas sensing mechanism was proposed that the addition of In2O3 into SnO2 enhanced the catalytic activity for the reaction. In addition, the morphology and unique structure were helpful to the gas reaction on the surface of the sensing materials. The prepared In2O3/SnO2 composite immensely reduced the dosage of the much expensive In element, and had the much higher response, which would have a great development space in the gas sensor field.

One step synthesized In2O3 alloyed CeO2 nanoparticles: Microstructure, phase stability investigation and charge transport properties

In this article we report the one step mechano-synthesis of In2O3 alloyed CeO2 solid solutions for different concentrations of In2O3 (5–10 mol%) for the first time. We have investigated the structure, microstructure, phase stability and ion transport properties of the system. All structural and microstructural parameters are estimated by analyzing the XRD patterns of the powdered compounds employing Rietveld refinement method as well as from the HRTEM images which also confirms the complete formation of the solid solution. Presence of In atoms in the ceria lattice as well as absence of any other element is also confirmed by the study of energy dispersive spectroscopy analysis. All alloyed CeO2 compounds are found to stable upto 850 °C Electrical (ionic) conductivity is found to increase within 5–6.5 mol% of alloying concentration, then remain almost invariant at maximum conductivity value in the range 6.5–8.5 mol% and finally decrease almost with the same rate to the initial value with increasing alloying concentration up to 10 mol%. Charge transport properties are investigated in detail studying different spectra. Ion hopping which follows the correlated barrier hopping mechanism is confirmed from the conductivity studies. Temperature independent mechanism of the conduction is also confirmed by the study of scaling behavior of the impedance spectra and ac conductivity.

Study on the hydrogen doped indium oxide for silicon heterojunction solar cell application

In this work, we presented a comparative investigation on the physical properties of hydrogen doped indium oxide (In2O3:H) films by the direct current magnetron sputtering method. Comparing with the traditional ITO films, the In2O3:H films have lower carrier density, higher Hall mobility and wider transmittance range for optimized O2 and H2 flow rates. At a critical H2 flow rate of 2.5 sccm, an electron mobility of ∼100 cm2/V·s was achieved after the air-annealed treatment. Note that this is the best value for In2O3:H films with H2 gas as the doping source for low temperature preparation as far as we know. In our case, the adding of H2 flow rate during the sputtering process increased the carrier concentration of In2O3:H films. Unexpectedly, higher Hall mobility was also achieved at the same time. This could be attributed to the mechanism that hydrogen impurities induced some shallow donors in In2O3:H, which had low scattering effect on the carrier transporting. Besides, a high transmittance was obtained at the low resistivity condition, which makes the In2O3:H films ideal candidate for solar cell application. Further, the resulting In2O3:H films were employed as the front anti-reflecting contact layer in large scale amorphous/crystalline silicon heterojunction solar cells, and remarkable device performances were achieved with a conversion efficiency of 21.13%, open-circuit voltage of 0.7296 V, short-circuit current density of 39.18 mA/cm2, and fill factor of 0.7390 for an optimized H2 flow rate of 2.5 sccm, showing an obvious enhancement in comparing with the conventional ITO counterpart.

The influence of In2O3 on electrical characteristics of iron mixed Li2O–PbO–B2O3–SiO2–Bi2O3 multi-component glass system

Glasses of the composition 19Li2O–20PbO–20B2O3–30SiO2–(10−x) Bi2O3–1Fe2O3: xIn2O3 with six values of x (0 to 5.0) were synthesized. Dielectric properties viz., dielectric constant, ε′(ω), loss, tanδ, ac conductivity, σac, electric modulus, M(ω) over wide ranges of frequency and temperature and also dielectric break down strength have been studied as a function of In2O3 concentration. The temperature dispersion of real part of dielectric constant, ε′(ω) has been analyzed using space charge polarization model. The dielectric loss (and also the electric moduli) variation with frequency and temperature exhibited relaxation effects and these effects were attributed to the divalent iron ion complexes. The ac conductivity exhibited maximal effect, whereas the activation energy for the conductivity demonstrated minimal magnitude at about 1.0mol% of In2O3. The conductivity mechanism is understood due to the polaronic transfer between Fe2+ and Fe3+ ions. The low temperature ac conductivity mechanism is explained following the quantum mechanical tunneling model. Spectroscopic studies viz., optical absorption and ESR spectra have revealed that the redox ratio (Fe2+/Fe3+) is maximal when the concentration of In2O3 is ~1.0mol%. The higher values of dielectric parameters observed at 1.0mol% of In2O3 are attributed to the presence of iron ions largely in divalent state and act as modifiers. The analysis of these results together with spectroscopic studies has indicated that when In2O3 is present in the glass matrix in higher concentrations (more than 1.0mol%) iron ions predominantly exist in trivalent state, occupy substitutional positions and make the glass more rigid. Such enhanced rigidity of the network is causing the decrease of dielectric parameters with the concentration of In2O3. Finally it is concluded that In2O3 mostly participate in the glass network in octahedral positions and make act as reducing agent (for iron ions) in the studied glass matrix when its concentration is ≤1.0mol%.

A new method to characterize the metallic-oxide films for grayscale lithography

In order to characterize the metallic-oxide grayscale films fabricated by laser direct writing (LDW) in indium film, a new method with micro-Raman spectroscopy and atomic force microscope (AFM) is proposed. Raman spectra exhibit the characteristic band of In2O3 centered at 490 cm−1, in which the intensities increase with the decreasing optical density of the In-In2O3 grayscale films. The mapping information of Raman spectra shows that the signal intensities of the film in the same grayscale area are uniform. Combining with the information of In-In2O3 grayscale film from AFM, the quantitative relationship between the concentration of In2O3 and the Raman signal intensity is shown. Compared with the conventional methods, the resolution of micro-Raman scattering method is appropriate, and the scanning speed is proper to analyze the structure of metallic-oxide grayscale films.

Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In2O3 – 100:0, 90:10, 70:30 and 50:50wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In2O3 and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In2O3 increases from 10 to 50wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In2O3.

Sensors based on SnO2 + In2O3 composite films for detecting CO in air

The sensor properties of nanostructured films of SnO2, In2O3, and their combinations for detecting CO in air in the temperature range of 330–520°C were investigated. It was found that SnO2 films show the least sensitivity to CO. Sensitivity grows as the concentration of In2O3 in SnO2 increases, and it reaches its maximum value in pure In2O3. At the same time, the maximum of sensitivity to CO in air shifts towards low temperatures. Sensor response time was found to be about 1 s for the studied SnO2 and In2O3 films, and about 0.5 s for the composite film. The mechanism of sensor sensitivity for the studied metal oxide films in detecting CO in air is discussed.

Polyaniline/nano-in<sub>2</sub>O<sub>3</sub> Composites Used as a Sensitive Material to NH<sub>3</sub>

In presence of nano-In2O3 which were synthesised via a reverse microemulsion, Polyaniline/nano-In2O3 composites were prepared by in-situ polymerization of aniline in 5-sulphosalicylic acid(SSA) aqueous solution. They were characterized by means of TEM, XRD and FTIR.. TEM and XRD showed that the average diameter of In2O3 particles was 15nm with a narrow size distribution and with a high degree of crystallization. The FTIR suggested that the structure of PAn-SSA was not be changed by the mixture of In2O3. Sensitivity of the composites to 100~1000ppm NH3 were studied, the results reveal that polyaniline/nano-In2O3 composites have short response time and good reversibility, the gas sensitive of composites to NH3 under 300ppm increased linearly with the increasing concentration of NH3 and decreased with the increasing of In2O3 concentration. Long-term stability of polyaniline/nano-In2O3 composites were also investagated, it can be concluded that the organic-inorganic hybrid materials have better environmental stability.

TRANSPARENT CONDUCTING ZnO:In THIN FILMS PREPARED BY MAGNETRON DC SPUTTERING METHOD

ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10-3 Ωcm, at a layer thickness of about 1μm, corresponding with ZnO:In target (2%wt In2O3), at the substrate temperature of about 240- 0C. All ZnO:In thin films have the transparence above 85% in the visible spectra.

Defect structure characteristics in near‐stoichiometric In:LiNbO3 single crystals grown by K2O‐flux method

AbstractWith K2O as flux, near‐stoichiometric In:LiNbO3 (In:SLN) crystals with different indium contents were grown by the top seed solution growth (TSSG) method. Defect structure characteristics and the replacement principle of extrinsic ions were derived from X‐ray powder diffraction, differential thermal analysis (DTA), ultraviolet‐visible (UV) absorption and infrared (IR) spectrum measurement. Further analysis indicated that the threshold concentration of In2O3 in near‐stoichiometric LiNbO3 crystals were about 1.1 mol%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Undoped and Eu3+ Doped In2O3 Quantum-Dots in Transparent Glass-Ceramics

Nano-structured glass-ceramics comprising In2O3 nanocrystals (quantum dots) in a silica glassy matrix have been synthesized for the first time to our knowledge, by thermal treatment of sol-gel precursor glasses with different concentrations of In2O3. Undoped and Eu(3+)-doped samples have been obtained and characterized. By means of X-ray Diffraction and Transmission Electron Microscopy analysis, the precipitation of In2O3 cubic crystalline nanoparticles was confirmed. The mean radii of these nanocrystals, from 1 to 4 nm, are comparable to the exciton Bohr radius, corresponding to wide band-gap semiconductor quantum-dots. Under interband UV excitation of the nanocrystals, a broad visible emission is observed in the undoped samples. Meanwhile, the Eu(3+)-doped samples only show emission from these ions which are efficiently excited by energy transfer from the In2O3, nanocrystals. Selective excitation of the Eu3+ ions allow us to discern those remaining in the silica glassy matrix from the ones located in the interface SiO2-In2O3.

Characterization of oxide precipitates in epitaxial InN by transmission electron microscopy

InN thin films have been grown epitaxially on GaN-buffered sapphire substrates by molecular-beam epitaxy at 500°C. A high level of oxygen contamination in the growth chamber led to formation of In2O3 precipitates in the films. These precipitates were characterized in detail by transmission electron microscopy (TEM). The concentration of In2O3 was estimated to be less than 0.07vol% in the present samples of oxygen content ∼0.5at.%. Cross-sectional TEM investigations revealed that the precipitates adopt a preferred crystallographic orientation within the InN matrix, and show a characteristic diameter of ∼5nm with average distance of ∼500nm. These observations suggest the effective solubility of O in InN could be below 1at.% at 500°C.

Threshold effects for resistance to optical damage and nonvolatile holographic storage properties in In:Mn:Fe:LiNbO_3 crystals

The threshold concentration for In2O3 was found in In:Mn:Fe:LiNbO3 crystals by measurement of the infrared spectra of the crystals. The resistance of the In:Mn:Fe:LiNbO3 crystals to optical damage is characterized by changes in photoinduced birefringence as well as by distortion of the transmitted beam pattern. The resistance increases remarkably when the concentration of In2O3 exceeds its threshold. The resistance to optical damage of a In(3.0 mol. %):Mn:Fe:LiNbO3 crystal is 2 orders of magnitude higher that of a Mn:Fe:LiNbO3 crystal. The dependence of defects on the resistance to optical damage of the In:Mn:Fe:LiNbO3 crystals is discussed in detail. Nonvolatile holographic storage was achieved for all crystals, and the sensitivity of the In(3.0 mol. %):Mn:Fe:LiNbO3 crystal is much higher than that of the others.

Application of Spectroscopic Ellipsometry and Infrared Spectroscopy for the Real-Time Control and Characterization of a-Si:H Growth in a-Si:H/c-Si Heterojunction Solar Cells

AbstractWe have demonstrated real-time process control of a-Si:H growth in an a-Si:H/c-Si heterojunction solar cell by spectroscopic ellipsometry (SE). Accurate thickness control of a-Si:H p-i layers with a precision better than ± Å has been realized by this technique. From real-time attenuated total reflection spectroscopy (ATR), we find the formation of a porous interface layer with a maximum SiH2-hydrogen content of 27 at.% at the a-Si:H/c-Si interface, although a rather high conversion efficiency of 14.6 % has been obtained in the solar cell. We found that an optimum i-layer thickness for the a-Si:H/c-Si solar cells is consistent with the thickness at which the a-Si:H i-layer growth reaches a steady state after the H-rich interface-layer formation. We have applied SE further to determine the dielectric functions of In2O3:Sn and ZnO:Ga with different carrier concentrations. From the dielectric function analysis, the effective mass m is extracted. We find linear increases in m as the carrier concentration of In2O3:Sn and ZnO:Ga increases. The validity of our analyses has been confirmed from excellent agreement between carrier concentrations determined by SE and Hall measurements. The construction of the optical database further enabled us to calculate a reflectance spectrum of the a-Si:H/c-Si solar cell accurately.

Effect of Indium Oxide Modification on the Phase Composition, the Structure of a Hydroxyl Cover, and the Electron-Acceptor Properties of Zirconium Dioxide

The effect of modification with indium oxide on the crystal structure, hydroxyl cover, and electron-acceptor properties of zirconium dioxide was studied. It was found that complex binary systems with a highly thermally stable tetragonal ZrO2 phase can be prepared by the modification. The concentration of In3+ in the lattice of ZrO2 depends only slightly on the total concentration of In2O3 in the system. The major portion of the indium oxide added is localized as an individual X-ray amorphous phase in intercrystallite voids. The In2O3 phase formed in these systems does not cover the surface of ZrO2 but is mainly localized in the intercrystallite space. The presence of the modifier component affects the predominant crystallographic direction and the defect structure of the surface formed. The modification was found to affect the structure of a hydroxyl cover and the electron-acceptor properties of zirconium dioxide.