Abstract
The effect of modification with indium oxide on the crystal structure, hydroxyl cover, and electron-acceptor properties of zirconium dioxide was studied. It was found that complex binary systems with a highly thermally stable tetragonal ZrO2 phase can be prepared by the modification. The concentration of In3+ in the lattice of ZrO2 depends only slightly on the total concentration of In2O3 in the system. The major portion of the indium oxide added is localized as an individual X-ray amorphous phase in intercrystallite voids. The In2O3 phase formed in these systems does not cover the surface of ZrO2 but is mainly localized in the intercrystallite space. The presence of the modifier component affects the predominant crystallographic direction and the defect structure of the surface formed. The modification was found to affect the structure of a hydroxyl cover and the electron-acceptor properties of zirconium dioxide.
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