Abstract
“In-situ changes in the carrier concentrations of In2O3 thin film were measured as a function of temperature in argon and argon containing 25 ppm of NO using high temperature Hall measurement facility. Studies show that the charge carrier concentration of In2O3 in argon at 373 K is 5.4 × 1017 cm−3 which gets reduced to 1.5 × 1015 cm−3 in oxygen due to the strong electron withdrawing character of the adsorbed oxygen. 25 ppm of NO in argon drastically lowers the carrier concentration of In2O3 to 4.8 × 1016 cm−3 at 573 K from 6.1 × 1017 due to its higher electron withdrawing character. “The change in DC conductance during sensing is caused by the adsorption of NO in argon on In2O3 surface which is confirmed by the analysis of N 1s pattern.” Adsorption of NO increases charge depletion length (LD) for NO in argon to 25.9 nm at 573 K from its value of 2.3 nm for pure argon and the temperature dependence of LD for NO in argon is evaluated.”
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