Charge Trapping Research Articles

Exploring charge transport dynamics in a cryogenic P-type germanium detector

This study explores the dynamics of charge transport within a cryogenic P-type Ge particle detector, fabricated from a crystal cultivated at the University of South Dakota. By subjecting the detector to cryogenic temperatures and an Am-241 source, we observe evolving charge dynamics and the emergence of cluster dipole states, leading to the impact ionization process at 40 mK. Our analysis focuses on crucial parameters: the zero-field cross-section of cluster dipole states and the binding energy of these states. For the Ge detector in our investigation, the zero-field cross-section of cluster dipole states is determined to be 8.45 × 10−11 ± 4.22 × 10−12 cm2. Examination of the binding energy associated with cluster dipole states, formed by charge trapping onto dipole states during the freeze-out process, reveals a value of 0.034 ± 0.0017 meV. These findings shed light on the intricate charge states influenced by the interplay of temperature and electric field, with potential implications for the sensitivity in detecting low-mass dark matter.

Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers.

For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state conditions. The stability of the device threshold voltage (Vt) condition is imperative from a circuit-design perspective and is the focus of this study, where stresses in both the ON and OFF states are explored. We see rapid positive threshold voltage increases under negative bias stress and subsequent recovery (i.e., Vt reduces), whereas conversely, we see a negative Vt shift under positive stress and Vt increase during the subsequent relaxation phase. These effects are correlated with the thickness of the GaN layer and ultimately result from the deep carbon-acceptor levels in the C-GaN back barrier incorporated to screen the buffer between the silicon substrate and the epitaxially grown GaN layer. Methods to mitigate this effect are explored, and the consequences are discussed.

Thermoluminescence and ATR-FTIR study of UVC-irradiated low-density polyethylene (LDPE) food packaging

This research aims to study the effects of ultraviolet C (UVC) radiation on low-density polyethylene (LDPE) food packaging. Main objectives include evaluating LDPE degradation and detecting UVC radiation using thermoluminescent dosimeters (TLDs) placed under LDPE samples. Results confirm accurate UVC detection after one hour of exposure, providing a useful tool for optimize food treatment procedures.ATR-FTIR spectroscopy analysis revealed subtle alterations (<8 % transmittance relative) in UVC-irradiated LDPE samples, including possible CH breakage (2910 and 2848 cm−1) and potential CC bond vibrations (1470 cm−1), among others. However, observed variations may stem from LDPE properties rather than entirely from UVC radiation. A comparative study of UVC-induced thermoluminescence (TL) emissions provided insights into various TLDs materials. TL kinetic analysis, using computerised glow curve deconvolution (CGCD) method, unveiled trap charge activation due to UVC exposure, including partial ionization, bleaching effect and photo-transfer (PTTL) processes. LDPE samples amplified UVC-TL responses, revealing intensity differences between the TLDs attributed to the PTTL process, accentuated by the lack of an annealing treatment. Additionally, chemical composition of the TL detectors such as, type, concentration, number, oxidation states and ionic radii of their dopants may influence UVC-TL response. Consequently, TL intensity ratios follow as: GR-200 (LiF: Mg, Cu, P) > TLD-100 (LiF: Ti, Mg) > TLD-400 (CaF2: Mn) > TLD-200 (CaF2: Dy). Thus, GR-200 detects ionizing radiation but cannot distinguish between ionizing and non-ionizing UVC radiation, while TLD-100 has limited effectiveness as a UVC radiation detector. In contrast, TLD-400 is suitable for detecting UVC radiation and TLD-200 emerges as the most favorable UVC detector, showing consistent response levels and minimal PTTL effect placed under the LDPE samples without the need of a thermal annealing treatment that makes the TLD-200 to be reusable in a low-cost measurement protocol.

Small sized of anion doping effect on semiconducting single-walled carbon nanotube network for field-effect transistors

Carbon nanotubes have shown great promise for high-performance, large-area, solution processable field-effect transistors due to their exceptional charge transport properties. In this study, we utilize the spin-coating method to form networks from selectively sorted semiconducting single-walled carbon nanotubes (s-SWNTs), aiming for scalable electronic device fabrication. The one-dimensional nature of s-SWNTs, however, introduces significant roughness and charge trap sites, hindering charge transport due to the van der Waals gap (∼0.32 nm) between nanotubes. Addressing this, we explored the effects of anion doping on the spin-coated s-SWNT random network, with a focus on the influence of the small size of halogen anions (0.13–0.22 nm) on these electronic properties. Raman and ultraviolet–visible–near-infrared optical spectroscopy results indicate that smaller anions significantly enhance doping effects through strong non-covalent anion–π interactions, improving charge transport and carrier injection efficiency in s-SWNTs, especially for n-type operation. This improvement is inversely proportional to the size of the halogen anions, with the smallest anion (fluorine) effectively transitioning the electrical characteristics of the s-SWNT network from ambipolar to n-type by reducing both junction and contact resistances through anion doping, based on anion–π interaction.

Artificial nociceptor based on interface engineered ferroelectric volatile memristor

Recent advancements in neuromorphic computing driven by memristors, which emulate biological synapses and neurons, have spurred the development of innovative information technologies. To extend memristor applications to artificial nervous systems, electronic receptors are crucial for converting external stimuli into signals for the internal nervous system. Key requirements for integrating neuron devices into neuromorphic computing include achieving threshold behavior, minimizing power consumption, and ensuring compatibility with complementary metal-oxide semiconductor (CMOS) technology. Hafnium-based ferroelectric memristors are known for their robust ferroelectric properties at nanoscales and compatibility with CMOS technology. However, their non-volatile resistive switching has historically limited their suitability for neuron sensory applications requiring threshold switching. This study demonstrates threshold switching behavior in a TiN/Hf0.67Zr0.33O2(HZO)/TiOx/TiN heterostructure by incorporating a nanoscale TiOx interfacial layer as an oxygen reservoir. This layer facilitates the formation of oxygen vacancies within the ferroelectric HZO layer, serving as internal charge trap sites. As a result, hafnium-based ferroelectric memristors exhibit volatile switching characteristics, enabling them to function as nociceptive devices through internal charge trapping and detrapping mechanisms. These volatile memristors are suitable for artificial nociceptor systems requiring responses such as threshold detection, relaxation, allodynia, and hyperalgesia to external stimuli. This capability opens avenues for developing advanced humanoid robots capable of rapid adaptation and response in challenging environments such as outer space or hazardous conditions, leveraging real-time sensory processing for effective operation and survival.

Mitigation of Parasitic and Drift Capacitance-Induced Nonlinear Current Responses for Stable and Sensitive Perovskite X-ray Detectors.

The development of perovskite direct X-ray detectors shows potential for advancing medical imaging and industrial inspection precision. To ensure the optimal energy conversion efficiency of X-rays for reducing radiation doses, it is necessary for perovskites with thicknesses reaching hundreds of micrometers or even several millimeters to be utilized. However, the nonlinear current response becomes uncertain with such high thicknesses. For instance, the prevailing theory regarding the rapid trapping and release of charges by shallow-level defects falls short in explaining the nonlinear current response observed in high-quality single-crystal samples. Moreover, a significant nonlinear current response can degrade the detection performance. Here, we elucidate peculiar parasitic and drift capacitance-induced nonlinear current responses in perovskites, which arise from bulk structural deficiencies and interface junction width variation in addition to shallow-level defects. Both theoretical analysis and experimental findings demonstrate the effective suppression of nonlinear current responses by establishing bulk heterojunctions and refining interface junctions. Consequently, we have successfully developed highly linear current-responsive detectors based on polycrystalline MAPbI3 thick films. Notably, these detectors achieve a record sensitivity of 2.3 × 104 μC·Gyair-1·cm-2 under 100 kVp X-ray irradiation with a low bias of 0.1 V/μm, enabling enduring and high-resolution X-ray imaging for high-density objects. Successful fabrication and testing of a 64 × 64-pixel flat-panel prototype detector affirm the widespread applicability of these strategies in rectifying nonlinear current responses in perovskite-based X-ray detectors.

Photon–carrier–spin coupling in a one-dimensional Ni(II)-doped ZnTe nanostructure

Transition metal (TM) ion doping in II–VI semiconductors can produce exciton magnetic polarons (EMPs) and localized EMPs containing longitudinal optical (LO) phonon coupling, which will be discussed in this paper. TM ion doping in II–VI semiconductors for a dilute magnetic semiconductor show emission via magnetic polarons (MPs) together with hot carrier effects that need to be understood via its optical properties. The high excitation power that is responsible for hot carrier effects suppresses the charge trapping effect in low exciton binding energy (8.12 meV) semiconductors, even at room temperature (RT). The large polaron radius exhibits strong interaction between the carrier and MP, resulting in anharmonicity effects, in which the side-band energy overtone to LO phonons. The photon-like polaritons exhibit polarized spin interactions with LO phonons that show strong spin–phonon polaritons at RT. The temperature-dependent photoluminescence spectra of Ni-doped ZnTe show free excitons (FX) and FXs interacting with 2LO phonon–spin interactions, corresponding to 3T1(3F) → 1T1(1G) and EMP peaks with ferromagnetically coupled Ni ions at 3T1(3F) → 1E(1G). In addition, other d–d transitions of single Ni ions (600–900 nm) appear at the low-energy side. RT energy shifts of 14–38 meV are observed due to localized states with density-of-states tails extending far into the bandgap-related spin-induced localization at the valence band. These results show spin–spin magnetic coupling and spin–phonon interactions at RT that open up a more realistic new horizon of optically controlled dilute magnetic semiconductor applications.

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

This work demonstrates a high-performance monolithically integrated GaN inverters platform, which incorporates enhancement-mode (E-mode) and depletion-mode (D-mode) GaN high-electron-mobility transistors (HEMTs) simultaneously using an Al:HfOx-based charge trapping layer. The developed E-mode HEMT exhibits a positive threshold voltage of 2.6 V, a high ON–OFF current ratio of 1.9 × 108, a current density of 376 mA/mm, and an ON-resistance of 15.31 Ω·mm. Moreover, the direct-coupled field-effect-transistor logic (DCFL) GaN inverter was characterized with and without D-mode device threshold voltage (VTH) modulation, demonstrating improved output swing and switching threshold shift by proposed VTH modulation. The optimized DCFL GaN inverter manifests a switching threshold of 2.34 V, a logic voltage output swing of 4.98 V, and substantial logic-low and logic-high noise margins of 2.16 and 2.49 V, respectively, at a supply voltage of 5 V. These results present a promising approach toward realizing monolithically integrated GaN logic circuits for power IC applications.

Transforming Red Phosphorus Photocatalysis: Dual Roles of Pre-Anchored Ru Single Atoms in Defect and Interface Engineering.

Crystalline red phosphorus(CRP), known for its promising photocatalytic properties, faces challenges in photocatalytic hydrogen evolution(PHE) due to undesired inherent charge deep trapping and recombination effects induced by defects. This study overcomes these limitations through an innovative strategy in integrating ruthenium single atoms(Ru1) within CRP to simultaneously repair the intrinsic undesired vacancy defects and serve as the uniformly distributed anchoring sites for a controllable growth into ruthenium nanoparticles(RuNP). Hence, a highly functionalized CRP with Ru1 and RuNP(Ru1-NP/CRP) with concerted effects in regulating electronic structures and promoting interfacial charge transfer has been achieved. Advanced characterizations unveil the pioneering dual role of pre-anchored Ru1in transforming CRP photocatalysis. The regulations of vacancy defects on the surface of CRP minimize the detrimental deep charge trapping, resulting in the prolonged lifetime of charges. With the well-distributed in-situ growth of RuNP on Ru1 sites, the constructed robust "bridge" that connects CRP and RuNP facilitates constructive interfacial charge transfer. Ultimately, the synergistic effect induced by the pre-anchored Ru1 endows Ru1-NP/CRP with an exceptional PHE rate of 3175μmolh-1g-1, positioning it as one of the most efficient elemental-based photocatalysts. This breakthrough underscores the crucial role of pre-anchoring metal single atoms at defect sites of catalysts in enhancing hydrogen production.

Transforming Red Phosphorus Photocatalysis: Dual Roles of Pre‐Anchored Ru Single Atoms in Defect and Interface Engineering

Crystalline red phosphorus(CRP), known for its promising photocatalytic properties, faces challenges in photocatalytic hydrogen evolution(PHE) due to undesired inherent charge deep trapping and recombination effects induced by defects. This study overcomes these limitations through an innovative strategy in integrating ruthenium single atoms(Ru1) within CRP to simultaneously repair the intrinsic undesired vacancy defects and serve as the uniformly distributed anchoring sites for a controllable growth into ruthenium nanoparticles(RuNP). Hence, a highly functionalized CRP with Ru1 and RuNP(Ru1‐NP/CRP) with concerted effects in regulating electronic structures and promoting interfacial charge transfer has been achieved. Advanced characterizations unveil the pioneering dual role of pre‐anchored Ru1 in transforming CRP photocatalysis. The regulations of vacancy defects on the surface of CRP minimize the detrimental deep charge trapping, resulting in the prolonged lifetime of charges. With the well‐distributed in‐situ growth of RuNP on Ru1 sites, the constructed robust “bridge” that connects CRP and RuNP facilitates constructive interfacial charge transfer. Ultimately, the synergistic effect induced by the pre‐anchored Ru1 endows Ru1‐NP/CRP with an exceptional PHE rate of 3175μmolh‐1g‐1, positioning it as one of the most efficient elemental‐based photocatalysts. This breakthrough underscores the crucial role of pre‐anchoring metal single atoms at defect sites of catalysts in enhancing hydrogen production.

Bio-based epoxy resin demonstrating high breakdown strength and low dielectric loss via intrinsic molecular charge traps construction

In the ultra-high voltage, ultra-high capacity and high frequency energy systems, epoxy-based dielectric materials demonstrating high breakdown strength and low dielectric loss are urgently needed. This work reports a strategy to modulate the charge trap depth in bio-based epoxy dielectric materials by tailoring the local molecular chain structures, ultimately leading to the significant suppression of high-field conductivity and dielectric loss. With the introduction of octa (dimethylsiloxy)octasilsiloxane (POSS) as the intrinsic molecular charge traps, our synthesized epoxy dielectric material exhibits a high breakdown strength of Eb-DC = 81.5 kV/mm, 37 % higher than the traditional bisphenol A epoxy resin (DGEBA), and low dielectric loss of tan δ = 0.0022, 45 % lower than that DGEBA. Furthermore, simulation results give the structure-property relationships, guiding the molecular design. Specifically, the dielectric properties are positively correlated with the LUMO energy difference and charge separation index of the polymer molecular chains. This work provides a promising pathway to enhance the dielectric properties of polymers by building intrinsic molecular charge traps, which is prospective for practical electronics and electrical power systems.

Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory.

Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.

Local charge regulation via selenium vacancies engineering in dielectric cobalt diselenide with enhanced microwave absorption

The weak electromagnetic loss capability of the single semiconductor material is difficult to meet the complicated electromagnetic environment nowadays, so vacancy engineering is employed to optimize the dielectric loss capability of CoSe2. Selenium vacancies are introduced into CoSe2 by re-annealing treatment, and the test results show that the selenium vacancies concentration enlarged with annealing temperature. The formation of selenium vacancies introduces a localized state in CoSe2, which enhances the capability of CoSe2 to trap charge carriers, and the increased conductivity contributes to the enhancement of the dielectric loss capability. Density Functional Theory (DFT) calculations demonstrate that the selenium vacancies disrupt the original charge equilibrium distribution of the CoSe2, and the non-recombined positive and negative charge centers induce a strong electric dipole polarization loss. Benefiting from the optimization of CoSe2 dielectric loss by the selenium vacancies engineering, RLmin of CoSe2-600 reaches −30.73 dB and the effective absorption bandwidth reaches 4.00 GHz at 1.8 mm. This study provides a simple and effective solution to optimize the microwave absorption performance of single-component microwave absorption materials.

Rationally Improved Surface Charge Density of Triboelectric Nanogenerator with TiO2-MXene/Polystyrene Nanofiber Charge Trapping Layer for Biomechanical Sensing and Wound Healing Application.

Triboelectric nanogenerators (TENGs) have become reliable green energy harvesters by converting biomechanical motions into electricity. However, the inevitable charge leakage and poor electric field (EF) of conventional TENG result in inferior tribo-charge density on the active layer. In this paper, TiO2-MXene incorporated polystyrene (PS) nanofiber membrane (PTMx NFM) charge trapping interlayer is introduced into single electrode mode TENG (S-TENG) to prevent electron loss at the electrode interface. Surprisingly, this charge-trapping mechanism augments the surface charge density and electric output performance of TENGs. Polyvinylidene difluoride (PVDF) mixed polyurethane (PU) NFM is used as tribo-active layer, which improves the crystallinity and mechanical property of PVDF to prevent delamination during long cycle tests. Herein, the effect of this double-layer capacitive model is explained experimentally and theoretically. With optimization of the PTMx interlayer thickness, S-TENG exhibits a maximum open-circuit voltage of (280V), short-circuit current of (20µA) transfer charge of (120 nC), and power density of (25.2 µW cm-2). Then, this energy is utilized to charge electrical appliances. In addition, the influence of AC/DC EF simulation in wound healing management (vitro L929 cell migration, vivo tissue regeneration) is also investigated by changing the polarity of trans-epithelial potential (TEP) distribution in the wounded area.

Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack

The factors limiting channel mobility in AlSiO/p‐type GaN metal–oxide–semiconductor (MOS) field‐effect transistors are examined by performing Hall‐effect measurements in conjunction with a gate bias, with and without a thin AlN interlayer. In the absence of this interlayer, the free carrier concentration associated with the Hall effect is significantly reduced compared with the net gate charge density estimated from capacitance–voltage data, indicating that electrons are trapped to a significant extent at the MOS interface. These interface traps are found to have an energy ≈20 meV above the Fermi level in strong inversion based on temperature‐dependent Hall effect data. The insertion of a 0.8 nm‐thick AlN interlayer eliminates charge trapping such that almost all gate charges are mobile. The mobility components could be divided into types based on their effect on the effective electric field perpendicular to the channel. Coulomb scattering centers resulting from interface states are evidently reduced by inserting the AlN interlayer, which also enhances the channel mobility to over 150 cm2 V−1s−1.

Investigating the role of palladium electrical contacts in interactions with carbyne nanomaterial solid matter

Introduction: Traps at the interface between carbyne and palladium nanocoatings, produced at different growth conditions, are explored by current-voltage characteristics, scanning electron microscopy and thermal stimulation of charges for evaluation of their nature. It was found that the Pd films can form an Ohmic contact with the carbyne at certain deposition conditions and such deviated from the Ohmic behavior according to the RF sputtering voltage. This growth parameter was found to affect the interfacial traps formation on the carbyne surface, which is important feature for the charge trapping and releasing properties for hydrogen isotopes in the context of the energy release applications.Methods, Results and Discussion: The sputtering voltages of 0.5 kV and 0.7 kV were found unsuitable for controlled trap formation. Based on the currentvoltage and thermally stimulated current (TSC) measurements, a sputtering voltage of 0.9 kV appeared to be more favorable compared to 0.5 kV and 0.7 kV. At 0.9 kV thermal activation of charge carriers are enabled at lower thermal energies, showing a distinct change in TSC behavior correlated to trap activation.

Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

AbstractInvestigating the intrinsic properties of the Schottky interface between graphene and 3D bulk silicon is crucial. However, the semiconductor technology introduces extra doping and defects in graphene, which significantly disturbs the property of the graphene‐silicon interface. Here, the interface parameters of graphene/n‐Si heterojunction are derived by the damage‐free Hg‐probe capacitance–voltage measurement. Due to its low‐density states, the Fermi level of graphene can be pushed upward, which results in a lower Schottky barrier height (ΦB0) of Hg/graphene/n‐Si (HGS) heterostructure than that of Hg/n‐Si (HS) structure. Additionally, the series resistance (Rs) of HGS becomes lower than that of HS, which can be attributed to the narrowed depletion layer width (WD) and the decreased interface state density (Nit). Furthermore, the frequency characteristic is also investigated. Because of the weak interface state charge trapping–detrapping process and the decreased Nit at high frequency, electrons will accumulate in graphene, and the Fermi level will be pushed up. Hence, the ΦB0 and Rs will decrease with increasing frequency. This study contributes to a deep understanding of the graphene/silicon heterojunction interfaces, which is crucial for designing and optimizing the new electronic and optoelectronic devices based on 2D/3D heterostructure.

Interfacial engineering dominated passivation strategy to facilitate performance improvement of CsSnCl3 PSCs by induced Sn–O bonds: Insight from DFT calculations and device simulations

Defect passivation of perovskite surface not only reduces non-radiative recombination due to defect trapping charge, but also modulates the interfacial structure and energy levels, making it an effective means of solving the stability problem of perovskite materials. This work provides a passivation strategy for CsSnCl3 perovskite, and the interfacial interactions between CsSnCl3 and the passivation agent (PbSO4 and PbCO3) are explored based on first-principles density functional theory. By introducing PbSO4 and PbCO3 with multifunctional quantum dots, strong Sn-O bonds are formed with unsaturated coordination and dangling bonds on the surface of CsSnCl3. Binding sites of water molecules and impurities would be occupied by these bonds, to achieve surface passivation and dehumidification effects, and significantly improve the optical properties of CsSnCl3. PbCO3/SnCl and PbSO4/SnCl constructed the satisfactory interfacial energy level structures. PbCO3/SnCl exhibited excellent light absorption performance ranging in 0 ∼ 1200 nm. Introducing PbSO4 and PbCO3 reduced the refractive index of CsSnCl3 exhibiting excellent extinction properties. According to the simulation of Solar Design, perovskite solar cells (PSCs) constructed by (PbSO4, PbCO3)/CsSnCl3 as the active layer achieved power conversion efficiencies of 15.1946 % and 17.3783 %, respectively. This work’s research and design results provide a passivation strategy and PSCs design scheme for CsSnCl3 surface defects, which is of great significance for further modification of CsSnCl3 to better apply in photovoltaic field.

Resistive switching suppression in metal/Nb:SrTiO3 Schottky contacts prepared by room-temperature pulsed laser deposition

Deepening the understanding of interface-type resistive switching (RS) in metal/oxide heterojunctions is a key step for the development of high-performance memristors and Schottky rectifiers. In this study, we address the role of metallization technique by fabricating prototypical metal/Nb-doped SrTiO3 (M/NSTO) Schottky contacts via pulsed laser deposition (PLD). Ultrathin Pt and Au electrodes are deposited by PLD onto single-crystal (001)-terminated NSTO substrates and interfacial transport is characterized by conventional macroscale methods and nanoscale Ballistic Electron Emission Microscopy. We show that PLD metallization gives Schottky contacts with highly reversible current-voltage characteristics under cyclic polarization. Room-temperature (RT) transport is governed by thermionic emission with Schottky barrier height ϕB(Pt/NSTO)∼0.71−0.75eV , ϕB(Au/NSTO)∼0.70−0.83eV and ideality factors as small as n(Pt/NSTO)∼1.1 and n(Au/NSTO)∼1.6 . RS remains almost completely suppressed upon imposing broad variations of the Nb doping and of the external stimuli (polarization bias, working temperature, ambient air exposure). At the nanoscale, we find that both systems display high spatial homogeneity of ϕB ( ⩽50meV ), which is only partially affected by the NSTO mixed termination ( |ϕB(M/SrO)−ϕB(M/TiO2)|<35meV ). Experimental evidences and theoretical arguments—based on a metal-insulator-semiconductor description of the M/NSTO—indicate that the PLD metallization mitigates interfacial layer effects responsible for RS. This occurs thanks to the reduction of the interfacial layer thickness and to the creation of an effective barrier against the permeation of ambient gas species affecting charge trapping and redox reactions. This description allows to rationalize interfacial aging effects, observed upon several-months-exposure to ambient air, in terms of a slow interfacial re-oxidation. Our work contributes to the fundamental understanding of interface-type RS and demonstrates that RT PLD offers a viable platform for the realization of robust, RS-free NSTO-based Schottky contacts.

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

In this paper, a symmetric heterogate dopingless electron–hole bilayer tunnel field-effect transistor with a ferroelectric layer and a dielectric barrier layer (FBHD-EHBTFET) is proposed. FBHD-EHBTFET can not only avoid random doping fluctuation and high thermal budget caused by doping, but also solve the issue that conventional EHBTFETs are unable to use the self-alignment process during device manufacturing. The simultaneous introduction of the symmetric heterogate and dielectric barrier layer can significantly suppress off-state current (I off). Ferroelectric material embedded in the gate dielectric layer can enhance electron tunneling, contributing to improving on-state current (I on) and steepening average subthreshold swing (SS avg). By optimizing various parameters related to the gate, ferroelectric layer, and dielectric barrier layer, FBHD-EHBTFET can obtain the I off of 1.11 × 10–18 A μm−1, SS avg of 12.5 mV/dec, and I on of 2.59 × 10–5 A μm−1. Compared with other symmetric dopingless EHBTFETs, FBHD-EHBTFET can maintain high I on while reducing its I off by up to thirteen orders of magnitude and SS avg by at least 51.2%. Moreover, investigation demonstrates that both interface fixed charge and interface trap can increase I off, degrading the off-state performance of device. The study on FBHD-EHBTFET-based dynamic random access memory shows that it has the high read-to-current ratio of 1.1 × 106, high sense margin of 0.42 μA μm−1, and long retention time greater than 100 ms, demonstrating that it has great potential in low-power applications.