Characterization Of Thin Films Research Articles

Synthesis and characterization of niobium carbide thin films on diamond surface for superconductive application

Diamond's unique properties make it attractive for use in a variety of industrial applications. However, this material has not found mass application in microelectronics due to several factors, including the lack of large-sized plates, n-type doping, and high-quality metallization. In this article, we address the problem of diamond surface metallization by forming niobium carbide layers. We obtained a niobium carbide film several nanometers thick that exhibits superconducting behavior up to 12.4 K. To our knowledge, this is the highest superconducting transition temperature achieved in the niobium carbide system. The crystal lattice parameter of the film is 4.4659 Å, which is close to the maximum value for niobium carbide lattice parameters. Density functional theory calculations were employed to investigate the thermodynamic stability of niobium carbide compounds at various temperatures and determine the superconducting critical temperature of niobium carbide. The combination of diamond's high thermal conductivity, along with the strong adhesion and superconductivity of niobium cabide films, introduces exciting possibilities for the realization of superconductive sensitive detectors.

Preparation and characterization of SbSeI thin films

Metal chalcohalides are promising candidates for next-generation technologies that include energy conversion, information storage, and quantum computing. Among them, antimony selenoiodide (SbSeI) has received rising interest for different optoelectronic devices, including photovoltaics, due to its bandgap energy, strong optical absorption, stability, and earth abundant, low-cost, and low toxicity constituents. In this work, SbSeI thin films were prepared through a two-step process. At first, antimony selenide (Sb2Se3) thin films were deposited at 300 °C (Sb2Se3-300) and at room temperature (Sb2Se3-RT) onto molybdenum covered soda-lime glass substrates by a magnetron sputtering method. The formation of SbSeI thin films was performed by isothermally annealing the as-deposited Sb2Se3 thin films in sealed quartz ampoules in the atmosphere of antimony iodide (SbI3) with the presence of 100 Torr of argon pressure. The influence of the annealing temperature and time during the iodization of different types of substrates on the morphology and composition of SbSeI thin films was investigated. The well-oriented and dense single-phase SbSeI thin films with stoichiometric composition and single-crystal micro-columnar structures were achieved by annealing Sb2Se3-RT in SbI3 atmosphere at 250 °C for 5 min under 100 Torr of Ar pressure. The room temperature photoluminescence (RT-PL) of SbSeI exhibited a broad asymmetric PL band with a maximum at 1.67 eV. The low-temperature (T = 8 K) PL study of SbSeI showed a broad and asymmetric PL band at 1.4 eV, being quite distant from the bandgap. This PL band at 1.4 eV with obtained small thermal quenching activation energy of 12.7 meV is proposed to originate from the deep donor-deep acceptor pair (DD-DA) recombination.

High-throughput membrane deflection characterization of shape memory alloy thin films

Nickel–Titanium (Ni–Ti) shape memory alloy thin films are currently gaining significant attention for small-scale systems, but device integration is still challenging due to its high compositional-dependent behavior. Therefore, it is crucial to identify the optimal parameters required to fabricate desirable samples. In this study, combinatorial high-throughput membrane deflection experiments were performed to investigate the mechanical properties of submicron-thick Ni–Ti thin films. The mechanical properties of freestanding Ni–Ti thin films, sputter-deposited with compositions and thicknesses ranging from 45.7 at. % to 52.7 at. % nickel and 270–530 nm were evaluated. With an increase in the Ni content, the crystallinity and existing phases of the films varied and exhibited an overall increasing trend of elastic modulus, transformation stress, percentage of recoverable strain and hysteresis area. Based on the obtained results, the compositional ratio of Ni–Ti films can be tailored accordingly to meet the different requirements of small-scale devices, and to then extend the employment of this high-throughput methodology in exploring advanced metallic alloys and ceramic composites.

Characterization of VO2 thin films deposited by simple and sustainable spray technique

Characterization of VO2 thin films deposited by simple and sustainable spray technique

A brief overview of X-ray photoelectron spectroscopy characterization of thin films

Preparation and characterization of nanostructured thin films have been reported by many researchers. X-ray photoelectron spectroscopy (XPS) method has been used over few decades in different fields such as superconductor, semiconductor, metallurgy and catalysis. In this work, elemental oxidation state, electronic state, chemical structure and chemical composition were investigated for metal sulfide, metal selenide, metal oxide and metal telluride films. Evaluation of binding energy for the obtained samples was reported. XPS spectra showed that annealing treatment has a very strong effect on the composition of the films. The elemental oxidation state and electronic state were strongly dependent on the specific experimental conditions.

Synthesis and Characterization of Cu-Ni Thin Films at Different pH Baths: A Comparative Study Using XRD, XPS and Corrosion Analysis

Cu-Ni films are electrodeposited at a cathodic current of 10 mA via galvanostatic mode on ITO-coated glass substrates. It found by X-ray diffraction that the films crystalized into fcc structure with the highest intensity corresponding to (111) plane at a two-theta value of 43°. The presence of binding energy peaks at 856.57 eV, 861 eV, 933 eV, and 952 eV observed in X-ray photoelectron spectroscopy have confirmed the presence of nickel oxide/hydroxide and copper oxide/hydroxide, respectively. Tafel polarization studies conducted in 3.5 wt. % sodium chloride solution shows the shifts in Ecorr towards the positive side and decrease of Icorr with the passage of exposure time is attributed to the formation of protective oxides/hydroxides layers of Cu and Ni elements in the films.

Electrochemically deposited nanostructured Cd-doped SnS thin films: Structural and optical characterizations

This paper investigates the impact of Cd-doping on the structural and optical properties of electrochemically deposited SnS thin films. The synthesized samples underwent characterization through various techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman, Fourier transform infrared spectrometer (FTIR), and UV–vis spectroscopy. According to the XRD analysis, the undoped SnS material exhibited a crystallite size (D) of 20 nm. However, as the Cd-doping concentration increased, the D initially increased and then decreased. The substitutional incorporation of Cd into SnS lattice was confirmed by XRD results. The inclusion of Cd-dopant into SnS lattice was validated through EDX analysis. SEM images demonstrated that appropriate Cd-doping into the SnS lattice can enhance crystalline nucleation, growth, and morphology. The absorption spectra of Cd 2–4 samples were higher than that of Cd 1, primary due to their increased film thickness and altered morphology type. The Cd 2 and Cd 3 samples exhibited higher R % values than Cd 1, associated with their superior crystalline quality. The deposited SnS samples exhibited a very high absorption coefficient (α) ranging from 10 to 25 × 104 cm−1, making them suitable as an absorber layer. The refractive index (n) value of the Cd 2 sample at wavelengths of 400–1000 nm surpassed all other samples due to its larger crystallite size. The Eg for undoped SnS was 1.57 eV, which initially decreased to 1.30 eV and then increased to 1.81 eV after Cd-doping. The Raman analysis confirmed the successful formation of the SnS phase in all samples. Based on the obtained results, it can be concluded that the Cd-dopant improves the structural and optical characterizations of SnS thin films.

Characterization of Zn1-xLaxS thin films; compositional, surface, optical, and photoluminescence properties for possible optoelectronic and photocatalytic applications

Characterization of Zn1-xLaxS thin films; compositional, surface, optical, and photoluminescence properties for possible optoelectronic and photocatalytic applications

Atomic construction and spectroscopic characterization of FeSe-derived thin films on SrTiO3 substrates

Controllably fabricating low-dimensional systems and unraveling their exotic states at the atomic scale is a pivotal step for the construction of quantum functional materials with emergent states. Here, by utilizing the elaborated molecular beam epitaxy growth, we obtain various FexSey phases beyond the single-layer FeSe/SrTiO3 films. A synthetic strategy of lowering substrate temperature with superfluous Se annealing is implemented to achieve various stoichiometric FeSe-derived phases, ranging from 1:1 to 5:8. The phase transitions and electronic structure of these FexSey phases are systematically characterized by atomic resolution scanning tunneling microscopy measurements. We observe the long-ranged antiferromagnetic order of the Fe4Se5 phase by spin-polarized signals with striped patterns, which is also verified by their magnetic response of phase shift between adjacent domains. The electronic doping effect in insulating Fe4Se5 and the kagome effect in metallic Fe5Se8 are also discussed, where the kagome lattice is a promising structure to manifest both spin frustration of d electrons in a quantum-spin-liquid phase and correlated topological states with flat-band physics. Our study provides promising opportunities for constructing artificial superstructures with tunable building blocks, which is helpful for understanding the emergent quantum states and their correlation with competing orders in the FeSe-based family.

Unraveling the synthesis, characterization, and optical behaviors of thin films: a comprehensive study

Unraveling the synthesis, characterization, and optical behaviors of thin films: a comprehensive study

Advances in Structural and Morphological Characterization of Thin Magnetic Films: A Review

The present review places emphasis on a comprehensive survey of experimental techniques to probe the structural and morphological features at the nanoscale range in thin magnetic films, incorporating those available at in-house laboratories as well as those at state-of-the-art synchrotron radiation facilities. This elucidating the range of available techniques, and the information they can yield represents a step for advancing the understanding of and for unlocking new possibilities in the design and optimization of thin magnetic films across a wide range of applications.

A Lightweight Neural Network for Spectroscopic Ellipsometry Analysis

AbstractEllipsometry is a widely used technique in thin film characterizations. To extract the optical properties of the films from the measured data, regression data fitting techniques have been developed that iteratively find a set of optical parameters that best fit the observations. However, this iterative process often faces challenges in converging to the correct solution, and it can be time‐consuming. To address these issues, an 8‐bit quantized lightweight method of neural network analysis for spectroscopic ellipsometry are proposed. This method features compact neural network modules to enhance speed and efficiency. The effectiveness of the approach through experimental verification is validated on a diverse range of material films, including metals, semiconductors, and dielectrics. The approach is fully automatic and lightweight, which offers a new perspective on balancing predictive accuracy with limited computational resources. This method holds the potential to achieve automatic, rapid, and high‐throughput optical characterization of films, facilitating real‐time quality monitoring for repeatable high‐precision film manufacturing.

Synthesis and characterisation of self-lubricating tungsten nitride thin films as protective machine tool coatings

ABSTRACT WN thin films were synthesised on silicon (100) substrate by varying the nitrogen flow rate (NFR) at a substrate temperature of 300°C for the initial 15 min using RF magnetron sputtering. With the increase in NFR from 1.58, 5.29 and 10 sccm (standard cubic centimetres per minute), the FCC β-W2N phase was converted to mixed phases of FCC β-W2N and hexagonal δ-WN, and further to amorphous phases. Likewise, XPS results indicated the presence of W-N phases. In addition, structural and morphological studies confirmed the presence of dense films at 1.58 sccm of NFR with a thickness of 430 nm and a surface roughness of 0.99 ± 0.16 nm. Moreover, the film with β-W2N phase (at 1.58 sccm of N2 flow) exhibited high hardness and elastic modulus values of 28.36 ± 2.57 GPa and 149.72 ± 8.04 GPa, and better scratch resistance with average coefficient of friction (COF) value of 0.303, making it best suitable for hard coating applications.

Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering

Fabrication and Characterization of CuInGaSe Thin Films Deposited on Silicon and Quartz Substrates Using One-Step Sputtering

Insights into the properties and possible bonding states of radiofrequency-magnetron-sputtered indium tin oxide thin films acquired using ultraviolet–visible spectroscopy data for cost-effective material characterization

Indium tin oxide (Sn-doped In2O3) is an optical material that is widely utilized in designing modern optoelectronic devices. To demonstrate the efficiency of ultraviolet–visible spectroscopy as a primary analysis tool for thin-film characterization, Sn-doped In2O3 films were deposited under untreated and annealed conditions. The optical parameters of these films were determined based on the transmission–reflection spectra recorded by an ultraviolet–visible spectroscopy laboratory setup. Through four-point probing, energy dispersive spectroscopy, and contact angle measurements, the electronic-band structures and chemical bonding states of the thin films were estimated. The transmission spectra confirmed that the post-annealing treatment promoted film homogeneity. Deeper insights into the optical parameters revealed that annealing encouraged Sn atom incorporation into the film structure and better stable phase formation. The incorporation of Sn atoms resulted in the substitution of Sn4+ into the In3+ sites of the In2O3 lattice and formation of the SnO phase. Notably, our evaluation of the film properties based on data acquired from ultraviolet–visible spectroscopy revealed good consistency with the data acquired from Hall-effect, X-ray diffractometry, and X-ray photoelectron spectroscopy investigations.

Fabrication and Characterization of Nanocrystalline Lead Sulfide Thin Film for Visible Light Photodetector

Fabrication and Characterization of Nanocrystalline Lead Sulfide Thin Film for Visible Light Photodetector

Evidence for intrinsic magnetic scatterers in the topological semimetal (Bi2)5(Bi2Se3)7

We report the synthesis and characterization of high-quality thin films of the topological semimetal (Bi2)5(Bi2Se3)7. Cryogenic magneto-transport experiments reveal strong metallic character and spin–orbit coupling in the films. By studying the temperature dependence of the electrical resistance of the topological semimetal, we observe a pronounced Kondo effect, which points toward the presence of magnetic scatterers. With the aid of density functional theory calculations, we identify Bi vacancies as intrinsic magnetic scatterers in this topological semimetal.

Growth and characterization of chromium selenide thin films for optoelectronic applications

Growth and characterization of chromium selenide thin films for optoelectronic applications

Preparation and Characterization of CdS Thin Films at Varying Molarities Using Chemical Spray Pyrolysis

Preparation and Characterization of CdS Thin Films at Varying Molarities Using Chemical Spray Pyrolysis

Synthesis and Characterization of Nanocube Cu2O Thin Film at Room Temperature for Methylene Blue Photodegradation Application

Methylene Blue is a synthetic dye with a complex structure thus making it hard to decompose naturally. Among the decomposition methods of synthetic dyes is photodegradation using a semiconductor material. In this study, Cu2O semiconductor nanoparticle has been synthesized on the surface of conductive substrate indium tin oxide using the electrodeposition method at room temperature. The X-ray diffractometer analysis provides information on the presence of Cu2O in the sample and the shape of the Cu2O crystal system which is a nanocube. Scanning electron microscopy with energy-dispersive X-ray spectroscopy provides distribution mapping information based on the morphology and atomic composition of the sample. Impedance measured a maximum resistance to charge transfer value of 2500 Ω. Photodegradation test towards methylene blue achieved a percent of degradation was 62.00% for 120 minutes under visible light irradiation with initial and final absorbance values of 1.56351 abs and 0.896875 abs respectively.