Carrier Storage Research Articles

Liquid nitrogen temperature to 700 K Bi3+ thermoluminescence: Toward wide-temperature-range light dosimeters for versatile anti-counterfeiting, information storage, and x-ray imaging

Discovering light dosimeters that can function effectively from liquid nitrogen temperature to 700 K presents significant challenges. Such dosimeters facilitate a range of cutting-edge applications, including anti-counterfeiting measures at low temperature for cryo-preservation. To facilitate such discovery, stacked vacuum referred binding energy diagrams for the LiYGeO4 cluster of crystals have been first constructed. They offer a robust method for controlling both electron and hole trapping depth in the LiYGeO4 cluster of crystals. Wide temperature shifting of Bi2+ and Eu2+ thermoluminescence (TL) glow bands emerges from 200 to 500 K for LiYxLu1-xGeO4:0.01Bi3+ and LiYxLu1-xGeO4:0.01Bi3+, 0.001Eu3+, by changing x, facilitating conduction band tailoring. Wide temperature shifting of Bi4+ TL glow bands emerges from 300 to 700 K for LiYGezSi1-zO4:0.01Bi3+, by tuning z, facilitating valence band tailoring. TL glow band peaks near 135, 185, 232, and 311 K emerge in LiyNa1-yYGeO4: 0.001Bi3+. Particularly, the discovered Bi3+ or/and lanthanide modified LiYGeO4 cluster of crystals exhibit superior charge carrier storage capacity and minimal TL fading properties. For instance, the ratio of TL intensity of the optimized LiYGe0.75Si0.25O4:0.001Bi3+ to that of industrial BaFBr(I):Eu2+ is as high as ∼4. Interestingly, imaging of intense optically driven Bi3+ ultraviolet-A (UVA) luminescence has been validated in 254 nm energized LiY0.25Lu0.75GeO4:0.01Bi3+ with a 100 lux white LED illumination. Together with ZnS:Mn2+, LiTaO3:Bi3+, Sm3+, and Cs2ZrCl6:Sb3+ perovskites, the realization of wide range liquid nitrogen temperature to 700 K Bi3+ thermoluminescence in Bi3+ or/and lanthanide modified LiYGeO4 cluster of crystals with superior charge carrier storage capacity offers promising use for versatile anti-counterfeiting, information storage, and delayed x-ray imaging purposes.

Catalyst Design and Engineering for CO2-to-Formic Acid Electrosynthesis for a Low-Carbon Economy.

Formic acid (FA) has emerged as a promising candidate for hydrogen energy storage due to its favorable properties such as low toxicity, low flammability, and high volumetric hydrogen storage capacity under ambient conditions. Recent analyses have suggested that FA produced by electrochemical carbon dioxide (CO2) reduction reaction (eCO2RR) using low-carbon electricity exhibits lower fugitive hydrogen (H2) emissions and global warming potential (GWP) during the H2 carrier production, storage and transportation processes compared to those of other alternatives like methanol, methylcyclohexane, and ammonia. eCO2RR to FA can enable industrially relevant current densities without the need for high pressures, high temperatures, or auxiliary hydrogen sources. However, the widespread implementation of eCO2RR to FA is hindered by the requirement for highly stable and selective catalysts. Herein, the aim is to explore and evaluate the potential of catalyst engineering in designing stable and selective nanostructured catalysts that can facilitate economically viable production of FA.

Transient Electroluminescence Spectroscopy in Planar Electroluminescent Devices

AbstractThe emergence of planar electroluminescent diodes (including polymer light‐emitting diodes, organic light‐emitting diodes, quantum‐dot light‐emitting diodes, and perovskite light‐emitting diodes) is causing a revolution in displays, lighting, and wearable electronic devices. Continuous advancement in the comprehension and management of charge carrier dynamics in these devices has led to several significant breakthroughs, including diodes with ultrahigh luminance, memory devices, and amplified spontaneous emission. Transient electroluminescence (TrEL) spectroscopy is a relative powerful technology to investigate charge dynamics, including transport, distribution, and storage of charge carriers, in electrically‐driven planar light‐emitting diodes (LEDs). The aim of this review is to revisit the principle and applications of TrEL spectroscopy in planar electroluminescent diodes, and to evaluate the reliability of various parameters extracted using this technology. A particular focus is on electroluminescence response time, charge‐carrier transport and storage, and exciton species. First, the principle and equipment system of the TrEL, as well as specific attention during TrEL measurements are described in detail, following by the applications TrEL spectroscopy in planar LEDs. Further development on the TrEL technology is discussed in the third section. Finally, a summary and outlook for the TrEL are shown and challenges faced by the TrEL spectroscopy are also highlighted.

Performance Analysis of a Renewable‐Powered Multi‐Gas Floating Storage and Regasification Facility for Ammonia Vessels With Reconversion to Hydrogen

ABSTRACTNatural gas and renewable energy carriers play critical roles in the energy supply chain due to rising energy consumption demands and a significant shift toward cleaner energy. However, the requirement to liquefy and regasify liquefied natural gas (LNG) and renewable energy carriers for transportation makes the entire process expensive and challenging. Hence, a floating storage and regasification unit (FSRU) plant provides a solution to the aforementioned problems with the additional benefit of being more affordable, time‐efficient, and having less land footprint requirement than the conventional onshore facility. The proposed integrated FSRU in this study, is powered by renewable energy, including solar and ocean thermal energy. The subsystems of integrated FSRU consist of parabolic dish collectors (PDC), Rankine cycle, organic Rankine cycle (ORC), multi‐stage flashing (MSF) desalination unit, decomposition, reliquefication, and regasification plants, which provide valuable commodities such as freshwater, electricity, hydrogen, and heating. It can also cater to standard multi‐gas harboring vessels for storage and regasification of sustainable energy carriers. The study assesses the performance of the proposed system thermodynamically by analyzing mass, energy, entropy, and exergy balance equations using the engineering equation solver (EES) software. Furthermore, parametric studies were conducted to understand the interlinkage among various variables. The analytical results show that the proposed system is able to produce 1.82 MW of electricity, 2056 kg/day of fresh water, and 338.3 kg/day of hydrogen, achieving an overall system energy efficiency of 32.7% and exergy efficiency of 79.3%. This approach aims to foster energy diversification, enhance energy security, and support the transition toward sustainable energy systems, as well as further the advancement of maritime transport systems.

Coordinated configuration of hybrid energy storage for electricity-hydrogen integrated energy system

This paper proposes an optimal coordinated configuration method of hybrid electricity and hydrogen storage for the electricity‑hydrogen integrated energy system (EH-ES) to promote the renewable energy source (RES) utilization and reduce the deployment cost. To simulate the practical operation of EH-ES, an energy hub framework with a discrete state space system matrix is designed to characterize the internal interconnection topology and quantify the steady-state production, storage, conversion and utilization processes of electricity and hydrogen energy carriers within EH-ES. A chronological operation simulation based electricity and hydrogen storage configuration model over a year-round time horizon is formulated to collaboratively optimize the capacity of the electrolyzer, fuel cell, battery energy storage (BES) and hydrogen storage tank. In this model, the power and capacity complementarity of BES and generalized hydrogen storage is fully exploited to compensate for power and energy imbalances, and additional capacity configuration of BES is considered to mitigate the drastic electrolytic power fluctuation. Besides, a typical source-load scenario reduction method based on K-means and ordered clustering is developed to avoid a large number of operation variables due to year-round hourly simulation. Comparative studies demonstrate that the proposed methodology can achieve the RES consumption rate of 98.873 % while the equipment investment cost can be reduced by 10.034 %.

Technical and economic feasibility study on reducing CO2 emissions of Dutch beam trawlers

This paper examines the technical and economic influence of CO2 reduction measures on the design and operation of Dutch beam trawlers. This is done by means of a parametric model used to assess the influence on the overall design of the vessel. Technical feasibility is determined by meeting operational effectiveness requirements, maximum added draught, maximum added length, and a reduction of CO2 emission by at least 40%. Secondly the model evaluates the new energy carrier and fish storage layout as a result of additional required volume. Additional volume is gained within the net store, fish hold, or by hull extension. Additionally, various propeller configurations, waste heat recovery, and regenerative braking systems are explored to reduce energy consumption. The economic performance is assessed using yearly operational requirements, capital expenses of configuration, and total cost of ownership.

Low-loss carrier stored trench-gate bipolar transistor with split-gate optimization

In the conventional carrier stored trench-gate bipolar transistor (CSTBT) device, a lower conduction voltage drop (Von) can be achieved with higher carrier stored (CS) layer dosage. However, the trench bottom is weakened leading to easier breakdown under high electrical field. In this work, the trench-gate structure of the conventional CSTBT is optimized and split into three components. The bottom and top left components of the split trench structure are equipotential with the emitter, which effectively eliminated the impact of collector on the trench gate with reduced gate charge (Qgc). In addition, another n-type CS layer is formed adjacent to the emitter to further enhance the hole carrier storage effect near emitter. This improves the trade-off between Von and turn-off time (Toff) without breakdown voltage (BV) degradation. The simulation results show that in comparison with the conventional CSTBT, the proposed device exhibits 64.6% reduction in Qgc under the same Von, while the turn-off time (Toff) and the saturation current are reduced by 14.9% and 43.4%, respectively. The short-circuit capability is also studied with 2.83 times improvement. Our proposed device shown here provides a feasible and attractive approach for advanced high-performance power electronics applications.

Accelerating the construction of digital and intelligentialized pathology and the prospects

With the continuous development of informatization, digitalization and artificial intelligence technology, the working mode of the pathology department has gradually changed from the traditional manual check, paper circulation and physical carrier storage to the informatization process and digital storage. The traditional pathology discipline has ushered in unprecedented opportunities and challenges. Digital pathology department also emerge as the times require. Simultaneously, with the full integration of artificial intelligence technology in pathology department, the concept of "department of digital and intelligentialized pathology" was proposed. Based on information and digital technology, the digital intelligent pathology department integrates intelligent management system, optimizes the previous cumbersome management and workflow of the pathology department, develops advanced technologies such as intelligent material extraction, unmanned organization processing, artificial intelligence quality control, artificial intelligence diagnosis, and promotes the intelligent construction of the pathology department.

Superjunction IGBT with split carrier storage layer

Abstract The Insulated Gate Bipolar Transistor (IGBT) is crucial in high-voltage applications due to its characteristics like breakdown voltage (BV) and on-state voltage VCE(sat). However, its slower turn-off time, attributed to hole mobility, restricts its frequency range. Techniques such as the carrier storage layer (CSL) and super-junction (SJ) structures aim to optimize BV and VCE(sat) through hole density and field distribution. Combining CSL and SJ offers advantages, yet challenges remain regarding E-field concentration. 
In this work, the split CSL concept introduces a solution by optimizing BV and Eoff through effective field distribution and hole extraction acceleration respectively while maintaining VCE(sat). Split CSL, which is divided into a high doping layer and a low doping layer, reduces the burden on the gate oxide by distributing the E-field evenly when in the off-state due to the difference in doping concentration. And during turn-off, hole current is concentrated on LDL, which has relatively low resistance, thereby accelerating hole extraction. Simulation-based results showcase improvements in the proposed structure's properties. The further optimization of high doping layer (HDL) and low doping layer (LDL) concentrations enhances the structure's performance. It is clear that the split CSL structure presents potential for advancing IGBT capabilities. The application of the split CSL structure resulted in significant improvements: the turn-off time was reduced by 32.4% and the breakdown voltage increased by 32.5 V compared to conventional CSL-SJ structures. These enhancements highlight the effectiveness of the split CSL design in optimizing the IGBT’s performance attribute.

Indirect evidence of Bi3+ valence change and dual role of Bi3+ in trapping electrons and holes for multimode X-ray imaging, anti-counterfeiting, and non-real-time force sensing

Discovering bismuth based smart materials that can respond to thermal, mechanical, and wide range X-ray to infrared photon excitation remains a challenge. Such materials have various uses like in advanced information encryption. In this work, valence state change between Bi2+, Bi3+, and Bi4+, and the dual role of Bi3+ in trapping electrons and holes have been studied in Bi3+ or/and Ln3+ (Ln=Tb or Pr) doped LiScGeO4 family of compounds by vacuum referred binding energy (VRBE) diagram construction, thermoluminescence, and spectroscopy. Electron release from Bi2+ has been evidenced. It can be used to experimentally determine the VRBE in the Bi2+ 2P1/2 ground state and to realize Bi3+ negative quenching luminescence. Particularly, a new force induced charge carrier storage phenomenon has been discovered for non-real-time force recording. Wide range of emission tailorable afterglow, unique Bi3+ ultraviolet-A, white, and infrared afterglow have been demonstrated by using Bi3+ as a hole trapping and recombination center and using energy transfer processes from Bi3+ to Tb3+, Pr3+, Dy3+, or Cr3+. Proof-of-concept advanced anti-counterfeiting, information encryption, and X-ray imaging will be demonstrated. This work not only develops smart storage phosphors, but more importantly unravels the valence change between Bi2+, Bi3+, or Bi4+ and how it can affect the trapping and release of charge carriers with thermal, optical, or mechanical excitation. This work therefore can promote the discovery and development of Bi3+ based smart materials for various applications.

Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top

A novel double-RESURF SOI-LIGBT with carrier-storage layer in P-top (CSLP-LIGBT) is proposed and studied by simulation. The carrier storage layer avoids direct connection between the P-top region and the P+ region, enhancing the carrier storage effect in the drift region during the on-state. CSLP-LIGBT provides a fast hole-extraction channel during the turn-off transient, shortening the turn-off time and decreasing the turn-off loss (Eoff). The simulation results show that at the same on-state voltage (VCE(sat)) of 1.12V and temperature is set to 300K, the turn-off loss of the CSLP-LIGBT is 25.49%, 35.59%, and 44.12% lower than that of the double-gate SOI-LIGBT (DG-LIGBT), double-RESURF SOI-LIGBT with floating P-top (FPDR-LIGBT), and double-RESURF SOI-LIGBT (DR-LIGBT), respectively. The CSLP-LIGBT effectively improves the tradeoff relationship between VCE(sat) and Eoff without sacrificing breakdown voltage and process complexity.

Hole transfer layer of glucose-derived carbon enabled rapid charge transfer and hole storage for efficient water splitting

Charge recombination at the interface of oxygen evolution catalyst (OEC) and BiVO4-based photoanode is one of the great challenges to achieve efficient photoelectrochemical (PEC) water splitting due to the poor charge transfer and separation efficiency of BiVO4. Herein, a composite photoanode (NiFe/C-Mo:BiVO4) consisting of a molybdenum doped BiVO4 photoanode, an OEC interfacial layer of NiFeOOH and a tailorable hole transfer layer (HTL) made of glucose-derived carbon in between, was designed and fabricated for highly efficient PEC water splitting. The composite NiFe/C-Mo:BiVO4 photoanode exhibited the photocurrent density of 5.62 mA cm−2 at 1.23 VRHE and an outstanding photo-stability. Characterization and photoelectrochemical analyses revealed that the inserted carbon HTL, though not active for surface water oxidation kinetics, greatly suppressed the unwanted recombination of electron-hole pairs and drastically improved the transfer and storage of charge carriers at the OEC/BiVO4 interface. A surface charge separation efficiency of 89 % at 1.23 VRHE and remarkable hole storage properties were obtained. This work afforded a novel approach to the design of low-cost and sustainable HTL integrated photoanodes for efficient PEC water oxidation.

Charge carrier trapping management in Bi3+ and lanthanides doped Li(Sc,Lu)GeO4 for x-ray imaging, anti-counterfeiting, and force recording

Discovering energy storage materials with rationally controlled trapping and de-trapping of electrons and holes upon x-rays, UV-light, or mechanical force stimulation is challenging. Such materials enable promising applications in various fields, for instance in multimode anti-counterfeiting, x-ray imaging, and non-real-time force recording. In this work, photoluminescence spectroscopy, the refined chemical shift model, and thermoluminescence studies will be combined to establish the vacuum referred binding energy (VRBE) diagrams for the LiSc1−xLuxGeO4 family of compounds containing the energy level locations of Bi2+, Bi3+, and the lanthanides. The established VRBE diagrams are used to rationally develop Bi3+ and lanthanides doped LiSc1−xLuxGeO4 storage phosphors and to understand trapping and de-trapping processes of charge carriers with various physical excitation means. The thermoluminescence intensity of x-ray irradiated LiSc0.25Lu0.75GeO4:0.001Bi3+,0.001Eu3+ is about two times higher than that of the state-of-the-art x-ray storage phosphor BaFBr(I):Eu2+. Particularly, a force induced charge carrier storage phenomenon appears in Eu3+ co-doped LiSc1−xLuxGeO4. Proof-of-concept non-real-time force recording, anti-counterfeiting, and x-ray imaging applications will be demonstrated. This work not only deepens our understanding of the capturing and de-trapping processes of electrons and holes with various physical excitation sources, but can also trigger scientists to rationally discover new storage phosphors by exploiting the VRBEs of bismuth and lanthanide levels.

Technological innovations in the LNG sector: A review: Assessing recent advancements and their impact on LNG production, transportation and usage

This paper thoroughly explores the recent technological innovations in the Liquefied Natural Gas (LNG) sector, examining their impact on production, transportation, storage, and usage. The study delves into the evolution of the global LNG market, emphasizing the critical role of technological advancements in shaping the industry's future. The aim is to analyze these innovations, assess their environmental and economic impacts, and explore the influence of geopolitical and market dynamics. By employing a comprehensive literature review, the paper utilizes a multi-criteria decision support framework to select relevant technological innovations and assess their impacts. This methodology integrates environmental, social, policy, and economic dimensions, offering a holistic view of the LNG sector's technological landscape. The findings reveal significant advancements in LNG production technologies, such as green ammonia and biogas, enhancing sustainability and efficiency. Innovations in LNG transportation, including optimized carrier fleets and storage systems, have revolutionized the industry, improving economic viability and safety. The emergence of Floating LNG (FLNG) technologies marks a pivotal development, unlocking new gas monetization possibilities. The study also highlights the environmental benefits of these innovations, including reduced greenhouse gas emissions and their synergy with renewable energy systems. The paper concludes that while technological advancements offer substantial benefits, they also present challenges, including high investment costs and regulatory complexities. It recommends continued innovation, strategic collaborations, and supportive regulatory frameworks to fully exploit the potential of LNG technologies. As the global energy landscape evolves, the LNG sector is poised to play a crucial role in the transition to a more sustainable and efficient energy future.

Dual-ion carrier storage through Mg2+ addition for high-energy and long-life zinc-ion hybrid capacitor

Dual-ion carrier storage through Mg2+ addition for high-energy and long-life zinc-ion hybrid capacitor

Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar

—In this paper, a novel dual-trench superjunction insulated gate bipolar transistor with semi-floating P-pillar (DTSFP-SJ-IGBT) is proposed and studied by simulation. The P-pillar of DTSFP-SJ-IGBT is semi-floating because only a portion is located below the trench gate, while a small part remains directly connected to the P-base. This small part P-pillar is depleted by the gate voltage in the on-state to enhance the carrier-storage effect, and provides an extraction hole path in the turning-off state to reduce the loss. The dual-trench structure results in a more uniform electric field distribution within the device while enhancing the carrier storage effect in the pillar regions. The simulation results show that at the same on-state voltage (VCE(sat)) of 1.30 V, the turn-off loss (Eoff) of the DTSFP-SJ-IGBT is 38.46 % lower than that of the superjunction IGBT with floating P-pillar (FP-SJ-IGBT), and 27.93 % lower than that of the recently reported superjunction IGBT with self-adaptive hole-extraction path (SAHE-SJ-IGBT). At the same Eoff of 1.00 mJ/cm2, the VCE(sat) of the DTSFP-SJ-IGBT is 44.70 % lower than that of the conventional superjunction IGBT (Con-SJ-IGBT).

Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

We present the fabrication and characterization of a flash memory device based on a van der Waals (vdW) heterostructure comprising graphene (Gr), hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The device exhibits versatile functionalities and demonstrates memtransistor-like behavior, making it a promising candidate for synaptic devices and neuromorphic computing. The Gr/h-BN/MoS2 heterostructure allows for the manipulation of charge concentration in the floating gate (FG) through control gate voltage (VBG), resulting in conductance switching. Moreover, the overlap structure of the FG and source-drain electrodes enables memtransistor-like operations, where the writing processes rely on the source-drain voltage (VDS). By varying carrier storage concentrations in the Gr-FG, multiple memory states can be achieved, offering analog information processing capabilities. In addition, the combination of dual-input functionality allows for the identification of a substantial on/off ratio even when utilizing a lower reading VDS, consequently strengthening the dependability of the memory state. Our work showcases the great potential of the Gr/h-BN/MoS2 heterostructure for advanced nanoelectronics, providing a platform for the development of computing architectures and neuromorphic systems.

Analisis Viabilitas Isolat Bakteri Penambat Nitrogen Azotobacter 33 pada Bahan Pembawa dan Suhu Penyimpanan yang Berbeda

Azotobacter is a microorganism that enhances nitrogen availability for plants and has the potential to be used as a biofertilizer. Assessing the viability of microorganisms within a biofertilizer is crucial in determining its quality. The carrier medium and storage temperature influence the viability of Azotobacter bacteria. Therefore, this research aims to identify the most suitable carrier medium and storage temperature to promote the growth of Azotobacter as a biofertilizer before its field application. The study was conducted at the Soil and Environmental Biotechnology Laboratory, Faculty of Agriculture, Bogor Agricultural University. The viability of Azotobacter was tested using Zeolite and Molasses as carrier media, and stored at temperatures of 4°C and 27°C. The parameters observed were the bacterial population count on the 14th day and the 28th day after inoculation. The results showed that the Azotobacter viability analysis using Zeolite as the carrier medium, storage at 4°C resulted in a population count of 3.7 × 106 CFU/ml, in comparison stored at 27°C resulted in an increased population count of 5.3 × 107 CFU/ml on the 28th day after inoculation. On the other hand, the Azotobacter viability analysis using Molasses as the carrier medium, storage at 4°C the bacterial population count reached 8.5 × 108, and storage at 27°C resulted in a bacterial population count of 7.9 × 106 on the 28th day after inoculation. It can be concluded that both of carriers have a good ability. The viability of Azotobacter is better in Molasses as the carrier medium, with storage at 4°C and the viability of Azotobacter is optimal in Zeolite as the carrier medium, with storage at 27°C, maintaining a stable population density without a decrease in the population count.

Versatile and High‐Performance LiTaO3:Tb3+, Gd3+ Perovskite for Multimode Anti‐counterfeiting, Flexible X‐Ray Imaging, Continuous Stress Sensing, and Non‐Real‐Time Recording

AbstractMultimode luminescence relates to how charge carriers are transported and recombined in response to various physical excitations. It shows promising applications in many fields like advanced anti‐counterfeiting, information storage and encryption. Enabling a stable single compound with multimode luminescence is a unique technology but still remains a challenge. Herein, a versatile and high‐performance energy storage LiTaO3:0.01Tb3+,xGd3+ perovskite is discovered by utilizing the interplay of electron‐trapping defect levels and hole‐trapping Tb3+. It combines an excellent charge carrier storage capacity (≈7 and 12 times higher than state‐of‐the‐art BaFBr(I):Eu2+ and Al2O3:C), >1200 h storage duration, >40 h afterglow, efficient optically stimulated luminescence, persistent mechanoluminescence, and force‐induced charge carrier storage features. Particularly, it well responds to various stimuli channels, i.e., wide‐range X‐rays to 850 nm infrared photons, thermal activation, mechanical force grinding, or compression. To elucidate this multimode luminescence, charge carrier trapping and release processes in LiTaO3:0.01Tb3+,xGd3+ with various physical stimulations will be unraveled by combining the vacuum‐referred binding diagram construction, spectroscopy, thermoluminescence, and mechanoluminescence techniques. The versatile and high‐performance LiTaO3:0.01Tb3+,xGd3+ enables promising proof‐of‐concept multimode luminescence applications in advanced anti‐counterfeiting, flexible X‐ray imaging, continuous compression force sensing, and non‐real‐time recording.

Correlation between properties of various carbon defects and electrochemical charge carrier storage mechanisms for use in Li- and Na-based rechargeable batteries

With the growing interest in promising energy sources for high-energy-demand devices, the development of materials for use in rechargeable batteries based on electrochemical charge carrier storage, such as Li and Na, has attracted intensive attention. Among them, carbon materials (e.g., graphene, graphite, and disordered carbons) have been extensively used as electrode materials for battery systems because of their critical advantages, namely, relatively good charge carrier storage capability, low cost, abundant resources, and simple manufacturing process. In particular, various types of defects are indispensably formed in the carbon structure during the manufacturing processes, which significantly influence their electrochemical charge carrier storage mechanisms and thus determine the electrochemical properties of the carbon-based rechargeable battery systems. This comprehensive review summarizes the correlation between the fundamental properties of carbon defects and electrochemical Li and Na storage mechanisms for Li- and Na-based rechargeable batteries, representative cations using battery systems, with a special focus on atomic-scale science and technology, which have a notable role in investigating and understanding the interaction between the defect phases and charge carriers in carbon structures. First, various carbon defects are categorized for the purpose of this work; then, computational/experimental methods for analyzing them and their critical properties (especially electronic structure) are introduced because identifying defect types is critical. Next, the roles and influences of carbon defects on electrochemical charge carrier storage mechanisms (especially adsorption and intercalation [insertion], diffusion, and formation of metal clusters) are described for Li- and Na-based rechargeable batteries. This study focuses on the physicochemical and electrochemical properties, which are key characteristics of carbon defects that determine their optimal utilization in rechargeable battery systems.