Capture Cross Section Research Articles

Shadow of rotating and twisting charged black holes with cloud of strings and quintessence

Testing gravity theories is an important and interesting issue in relativistic astrophysics using astrophysical observations. In recent years, Event horizon telescope collaboration provided valuable data from shadow of supermassive black holes located at the center of the galaxies Milky Way and Meissner 87, which may help to get information about the spacetime around the black holes. In this work, first, we consider rotating black hole solution for charged black hole with the NUT charge in the presence of clouds of strings, and study the event horizon properties of spacetime around rotating twisting and charged black holes in the cloud of strings and quintessential fields. The null geodesics of the spacetime is derived and the shadow case, radius of the shadow of the black and its distortion, due to the effects of the black hole spin, also analyzed. It is obtained that gravitational effects of black hole charge and quintessential field compensate each other and the rotating black hole’s shadow can be circular. We obtain constraints on charge and spin parameters of supermassive black holes Sgr hbox {A}^* and hbox {M87}^* using observational data from their shadow (size and observational angle) for various values of the NUT charge, cloud of strings and quintessential field parameters. Moreover, we also investigate gravitational capture cross-section for electromagnetic waves and emission rate of the black hole radiation energy through Hawking evaporation.

Thermal neutron capture cross-section and resonance integral measurements of 186W(n,γ)187W reaction using the thermal column neutron source at the Dalat research reactor

The thermal neutron radiative capture cross-section (σ0) and the resonance integral (I0) of the reaction 186W(n,γ)187W were measured by the thin foil activation method using the well thermalized neutron source at the graphite thermal column facility of the Dalat research reactor. The activities of the irradiated target and monitor samples were measured using a high resolution HPGe gamma-ray spectrometer. The recent updated values of gamma-rays intensities and decay half-life of the 187W nucleus were applied in this experiment to substantially improve the cross-section results compared to the previous measurements. The thermal neutron capture cross- section and the resonance integral of the 186W(n,γ)187W reaction were determined relative to the standard reaction 197Au(n,γ)198Au. The values obtained are 31.76 ± 0.63 and 429.2 ± 25.6 barns for σ0 and I0 respectively. Our results and previous measured values are compared, and discrepancies are discussed.

Can we use heavy nuclei to detect relic neutrinos?

Recent analysis of the viability of solid state-based relic neutrino detectors has revealed the fundamental necessity for the use of heavy, A>100, beta -decayers as neutrino targets. Of all heavy isotopes, and stand out for their sufficiently low decay energies, reasonable half-life times and stable daughter nuclei. However, the crucial bit of information, that is the soft neutrino capture cross-section is missing for both isotopes. The main reason for that is a particular type of beta -decay, which precludes a simple link between the isotope’s half-life time and the neutrino capture rate. In light of the necessity for a reliable estimate of the capture rate – unimpeded by potentially devastating theoretical uncertainties – prior to using the isotope in a full-scale experiment, we propose an experimental method to bypass this difficulty and obtain the capture cross-section of a soft neutrino by a given isotope from the isotope’s beta -spectrum.

Materials and interfaces properties optimization for high-efficient and more stable RbGeI3 perovskite solar cells: optoelectrical modelling

In this research work, we investigated the effects of a broad set of materials properties and external operating parameters on the opto-electrical output of a hybrid RbGeI3-based perovskite solar cell (PSC) as a means of enhancing its performance. We first performed a judicious numerical modelling of the reference cell with the following structure FTO/TiO2/RbGeI3/Spiro-OMeTAD/Ag, with data retrieved from the experiment. SCAPS program enables to model the device, considering charge carriers transport governing equations. Investigations are directed on addressing the current challenges that include thinner, less environmentally harmful, cost-effectiveness, and more stable solar devices over time. Analysis of the effects of different hole transport material (HTM) on current–voltage (J-V) and external quantum efficiency (QE) characteristics, helps to identify CuI as an ideal HTM. Optimal cell output were achieved by investigating the effects of metal contact work function, defect states, RbGeI3 thickness, light transmission/reflection at the front/back contact, as well as operating temperature. As a result, efficiency increased significantly from 10.11 to 18.10%, and fill factor that represents a stability indicator, increased from 63.68 to 76.95%. Moreover, an optimum open-circuit voltage Voc = 0.70 V and a high short-circuit current density of Jsc = 33.51 mA/cm2 were recorded. An additional study on the capture cross-section of charge carriers ({sigma }_{n,p}) on PV characteristics, enabled to achieve a power conversion efficiency (PCE) of 29.71% and FF of 88% at a value of {sigma }_{n,p} selected to be 10–22 cm2. This contribution aims at designing and producing thinner, more efficient, more stable and more environmentally clean and economically viable PSCs.

Characterization of the DHC Crack Parameters in Zirconium Alloys

"Zirconium alloys are used in heavy water-cooled reactors due to their low thermal neutron capture cross-section and good mechanical and corrosion properties. At the beginning of their operation, hydrogen was identified as an embrittlement agent. The source of the embrittlement was hydride precipitates that formed as platelets. Hydrides were associated with the cracks and the process was called Delayed Hydride Cracking – DHC. This research aims to develop a reproducible procedure concerning DHC KIH parameter measurements on Zirconium claddings, by using the Pin Loading Test (PLT) technique. Experimental activities including sample preparation, adding hydrogen, testing and results are presented in detail. "

Rapid analysis of 226Ra in ultrapure gadolinium sulfate octahydrate

Abstract Numerous particle physics experiments utilize gadolinium (Gd), a rare earth element with the most significant neutron capture cross-section among all elements, to detect anti-neutrinos via inverse beta decays or to remove neutron-induced background events. For example, to load Gd into water Cherenkov detectors, Gd2(SO4)3 · 8H2O is dissolved and rare event search experiments are required to screen for radioactive impurities in Gd2(SO4)3 · 8H2O before dissolution. This study developed a new method to rapidly measure the radium-226 (226Ra) concentration in Gd2(SO4)3 · 8H2O. This method requires only 3 days to measure a batch of samples, as opposed to the usual method using high-purity germanium detectors, which takes approximately 20 days after arrival. The detection limit for the measurement of 226Ra concentration in Gd2(SO4)3 · 8H2O is 0.43 mBq/kg. This method has been already used for Gd2(SO4)3 · 8H2O screening at the Super-Kamiokande Gd (SK-Gd) project, and it can be applied to future experiments.

Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p–n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E emi) and the hole capture cross section (σp ) were derived to be 0.10 eV and 2.48 × 10−15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (τc ) and emission time constant (τe ). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N Ta) of 2.73 × 1015 cm−3 was extracted, together with an electron capture cross section (σn ) of 1.42 × 10−18 cm2. This study provides a foundation for the comprehension of trap properties in β-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.

Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

Commercial silicon heterojunction photovoltaic modules, known as amorphous-silicon-based heterojunction with intrinsic thin-film layer (HIT) modules, show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida display mostly uniform decreases in intensity when mapped with photoluminescence (PL) imaging compared to a control module. Flash-table-based current-voltage curves show that degradation is dominated by voltage loss. Samples are cored from each of the modules, and deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of electron emission from the defects of 0.07, 0.16, and 0.50 eV. DLTS measurements on the weathered modules show an additional deep-level, electron-trap defect state with an activation energy of 0.51 eV and a trap density of approximately 1012 cm−3. The capture rate is measured using varying short filling pulse times, and the resulting capture cross section is estimated to be 1.1x10−16 cm2. The development of the weathering-related defect level correlates to decreases in carrier lifetime, PL intensity, and module voltage. Various depths of the space charge region are probed with increments in applied reverse bias and filling-pulse bias. This DLTS depth profiling shows a trend of trap density increasing with less applied reverse bias, suggesting that the weathering-related defect increases carrier recombination toward the interface between the bulk silicon wafer and the junction-forming amorphous-silicon passivation layers.

Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150 ℃, 200 ℃ and 300 ℃ for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 times 1013/cm2, and the capture cross section is sigma = 8.5 times 1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu–Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

The reaction rate of radiative n8Li capture in the range from 0.01 to 10 T9

Within the modified potential cluster model (MPCM) with forbidden states, the total cross sections are calculated for capture in the ground and first excited states of the9Li nucleus in then8Li channel in the energy range from 10−5 eV to 5 MeV based onЕ1 andM1 transitions. The experimentally proved resonance atEc.m.= 0.232 MeV in the4P5/2wave andab initio-predicted4P3/2resonance at 1.32 MeV [Phys. Rev. C 103, 035801 (2021)] are considered. The strong impact of the asymptotic constant and channel spectroscopic factors on the total capture cross sections are responsible for the variation in the absolute values within factor two. As a consequence, the thermal cross sections areσtherm=24–46.8 mb. The evaluation ofσthermbased on the extrapolation ofab initiocross sections yields ∼85 mb. The reaction rate is calculated in the temperature range from 0.01 to 10T9. The reported reaction rates are compared at the benchmark point 1T9. The comparison of two datasets [Phys. Rev. C 103, 035801 (2021) and Phys. Rev. C 105, 064608 (2022)] on reaction rates recently calculated in microscopic models in extended temperature intervals shows the essential quantitative and qualitative differences. The comparative joint analysis of the reaction rates of radiative neutron capture on the lithium isotopes6,7,8Li is suggested for the choice of an optimal interval for the asymptotic constants.

Calculation of Ionization, Excitation and Electron Capture Cross Sections for Be4+ + H(2s,2p) Collisions.

A computational study of Be4+ + H(2s,2p) collisions has been carried out employing the Classical Trajectory Monte Carlo (CTMC) method for the impact energy range from 20 keV/u to 1000 keV/u. The integral n partial cross sections for H(n) excitation and Be3+(n) electron capture and, the total ionization and electron capture cross sections are calculated and compared to recent semiclassical results. A general good agreement is observed for the n partial and total electron capture and ionization cross sections. The comparative study of the three inelastic processes show no significant differences between both excited targets.

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. By comparing the experimentally obtained two-dimensional electron gas (2DEG) concentration of unintentionally doped (UID) AlGaN/GaN MC-HEMTs with simulated 2DEG concentration, we hypothesized that hole trap(s) exist at the buried GaN/AlGaN interfaces, which act as sources of 2DEG in UID MC-HEMT heterostructures. Furthermore, these hole traps stop the Fermi level from cutting the valence band at GaN/AlGaN interfaces, which in turn precludes the generation of parallel two-dimensional hole gas (2DHG) in the MC-HEMT. However, no experimental report is present as a proof for the existence of such a hole trap in MC-HEMT heterostructures. In this study, a capacitance–conductance method on single and dual channel HEMTs revealed traps with higher time constant of 19–28.7 μs exclusively for the dual channel HEMT heterostructure. These traps are observed at the buried GaN/AlGaN interface of the dual channel HEMT; hence, they are attributed to possible hole traps at this interface. By conducting systematic deep level transient spectroscopy measurements, the existence of hole traps is confirmed at the buried GaN/AlGaN interface with an activation energy of 717 meV and a capture cross section of 1.3 × 10−14 cm2. This experimental evidence of the existence of hole traps at the GaN channel/AlGaN interface further supports our claim that these hole traps act as the source of 2DEG in UID MC-HEMTs and that buried parallel 2DHG channels do not exist in MC-HEMTs.

Effect of defects in capacitance-voltage measurement of doping profiles in Ga2O3

We investigate the intermixing effects of doping profile and the carrier emission from deep levels in the capacitance-voltage measurement of the wide bandgap semiconductor material of β-Ga2O3. Specifically, we find that the spatial non-uniformity of doping measured under practical conditions is substantially contributed by artifacts due to carrier emission from deep levels. We develop a procedure to measure the hysteresis in cyclic capacitance-voltage experiments in dark and at room temperature for probing of the deep levels contributing to the apparent doping profile. Analysis of this hysteresis in the dynamic electrostatic framework of a Schottky junction containing deep levels enables more accurate determination of the doping density and its spatial distribution, and simultaneously the extraction of energy, density, and capture cross-section of the deep levels.

TRU oxide sample reactivity worths measured in the FCA-IX assemblies with systematically changed neutron energy spectra

ABSTRACT A series of integral experiments was conducted to evaluate the fission and the capture cross-sections of transuranic (TRU) nuclides at the fast critical facility FCA of the Japan Atomic Energy Agency (JAEA). The experiments were carried out using seven uranium-fueled assemblies of the FCA. The neutron energy spectra of the core regions were adjusted so as to change from an intermediate neutron spectrum to a fast neutron spectrum on an assembly-by-assembly basis. The integral data measured with these experimental configurations provide some neutron energy characteristics: 1) fission rate ratios (FRRs) of 237Np, 238Pu, 242Pu, 241Am, 243Am, and 244Cm relative to 239Pu by using absolutely calibrated fission chambers, 2) small sample reactivity worths (SRWs) of 237Np, 238Pu, 240Pu, 241Am, and 243Am where oxide powders of around 15 to 20 grams were used, 3) criticalities, and 4) spectral indices such as fission rate ratios of 238U relative to 235U. In this paper, details of the SRW measurements are reported, and the latest Japanese Evaluated Nuclear Data Library JENDL-5 is tested by using the integral data obtained in systematically varied neutron energy spectra.

241Am Neutron Capture Cross Section Measurement using the NaI(Tl) spectrometer of the ANNRI beamline of J-PARC

ABSTRACT The neutron capture cross-section of 241Am was measured from 10 meV to about 500 keV using the NaI(Tl) spectrometer of the Accurate Neutron-Nucleus Reaction Measurement Instrument (ANNRI) beamline in the Materials and Life Science Experimental Facility (MLF) of the Japan Proton Accelerator Research Complex (J-PARC). The total energy detection principle was applied in conjunction with the pulse-height weighting technique to derive the neutron capture yield. The present cross-section results were normalized using a 197Au sample measurement by applying the saturated resonance method. The thermal cross section was measured to be 708 ± 22 b, in agreement with the evaluation in JENDL-5 of 709 b within uncertainties. In the keV region, the evaluated libraries of JENDL-5, ENDF/B-VIII.0 and JEFF-3.3 are in good agreement with the present results over 10 keV but show values lower by 30% to 70% below that energy. Moreover, the results of a resonance shape analysis of the resolved resonance region are also provided in the present paper.

Parametric neutronic analysis of different cladding options for ThO2 pellet of advanced dual-cooled annular PWR assembly

This study presents a parametric neutronic evaluation of different candidate claddings for a purposed candidate fuel (Th-233U-235U)O2 in an advanced dual-cooled annular PWR assembly. The investigated claddings include Zircaloy-2/4, zirconium carbide (ZrC), silicon carbide (SiC), ferritic Fe-20Cr-5Al (FeCrAl) and APMT alloys, and austenitic 310 (SS-310), compared to the by design cladding for the AP1000 assembly, Zirlo™. Neutronic calculations were performed using the deterministic code DRAGON, and the parameters included infinite multiplication factor, criticality periods, neutron flux spectra, radial power distributions, rim effects, and reactivity feedback coefficients.The results show that the candidate fuel with Zirlo™ achieves a higher criticality period than UO2 fuel in both solid and annular configurations. The candidate fuel with SS-310 cladding exhibits a higher criticality period penalty of about 12.60% compared to Zirlo™, APMT, and FeCrAl claddings show a criticality period penalty of about 10.94% and 8.79%, respectively. The candidate fuel with ceramic claddings, SiC and ZrC, can achieve slightly higher criticality periods compared to Zirlo™ of about 1.11% and 0.24%, respectively, due to their low thermal neutron absorption cross-sections. Regarding the power profile, the annular (Th-233U-235U)O2 fuel exhibits a flatter behavior compared to UO2 fuel. However, the claddings with lower capture cross-sections exhibit slightly increased fission power through the fuel pellet. The fuel temperature coefficient for candidate fuel exhibits more negative values as the capture cross-section of the cladding increases, while the molybdenum and zirconium-containing claddings exhibit more favorable moderator temperature coefficients.

Systematics of Coulomb barriers deduced from experimental capture cross sections and then used to predict the capture cross sections

The experimental data of capture cross sections for 220 light, medium and heavy reaction systems for formation 45≤Z≤102 compound nucleus have been analyzed using a simple formula, this formula is derived by assuming the Gaussian shape of the barrier distribution function. For each reaction, the empirical values of the barrier height, barrier radius and width of the barrier distribution were determined by fitting the experimental data. The obtained mean values of the barrier height have been used for determination of the parameters of the analytical expression in the barrier heights. One finds that the mean barrier heights calculated with analytical expression are reproduced with an accuracy of about 2 MeV. However, other frequently used potentials are systematically overestimated the empirical values, especially for heavy systems. Using analytical expression in the barrier heights can predict nicely the capture cross sections for formation superheavy nuclei at above as well as below barrier energies.

Influence of S-content ratios on the defect properties of Sb2(Sx, Se1–x)3 thin-film solar cells

Sb2(S, Se)3 has widely emerged as an absorber material for solar cells because of its favourable optical properties and abundant raw materials. Although the Sb2(S, Se)3 film comprises simple binary elements and has a lesser complex phase than that of quaternary copper indium gallium selenide, the distribution of atoms within its structure significantly affects its performance. More specifically, this effect is attributed to three non-equivalent positions of selenium or sulphur atoms and two non-equivalent positions of antimony atoms inside its unique quasi-one-dimensional asymmetric structure. Consequently, the composition ratios inside Sb2(Sx, Se1–x)3 significantly impact the film's properties, especially the defect properties. The underlying origins of this effect remain elusive. Along these lines, in this work, defect measurements of the Sb2(Sx, Se1–x)3 solar cells with different S-content ratios were conducted using deep-level transient spectroscopy and then discussed in detail. The analysis confirmed that deep-level defects were always present, and their lower density favoured the device's performance. Moreover, the solar cells consisting of Sb2(Sx, Se1–x)3 thin films with 0.3 S-content ratios exhibit better conversion efficiency with lower deep-level defects density and capture cross-section.

Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials

Incorporation of Se into Cd1−xZnxTe (CZT) to form the quaternary compound semiconductor Cd1−xZnxTe1–ySey (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.

Measurements of the Neutron Total and Capture Cross Sections and Derivation of the Resonance Parameters of 181Ta

The neutron total and capture cross sections of 181Ta were measured at the Accurate Neutron-Nucleus Research Measurement Instrument of the Materials and Life Science Experimental Facility in the Japan Proton Accelerator Research Complex to improve the accuracy of the current resonance parameters. The total cross section was determined from the transmission measurement in the energy range from 0.2 to 150 eV. The capture cross section was derived from the capture yield using the pulse height weighting technique in the energy range from thermal to 150 eV. The thermal neutron capture cross section was measured as 21.3 ± 0.3 ( stat ) ± 0.6 ( sys ) b. The obtained transmission and capture cross section were simultaneously fitted using the resonance analysis code REFIT, and the resonance parameters for resonances below 150 eV were evaluated. The present resonance parameters were compared to reported measurements.