Abstract
We investigate the intermixing effects of doping profile and the carrier emission from deep levels in the capacitance-voltage measurement of the wide bandgap semiconductor material of β-Ga2O3. Specifically, we find that the spatial non-uniformity of doping measured under practical conditions is substantially contributed by artifacts due to carrier emission from deep levels. We develop a procedure to measure the hysteresis in cyclic capacitance-voltage experiments in dark and at room temperature for probing of the deep levels contributing to the apparent doping profile. Analysis of this hysteresis in the dynamic electrostatic framework of a Schottky junction containing deep levels enables more accurate determination of the doping density and its spatial distribution, and simultaneously the extraction of energy, density, and capture cross-section of the deep levels.
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