Abstract
It is proposed that measurements of the isothermal pressure dependences of emission rates and capture cross sections can provide a quantitative measure of the lattice volume relaxation accompanying carrier capture and emission processes by deep levels. The method is demonstrated for the gold acceptor and the oxygen-vacancy pair (A-center) levels in silicon. The results represent what is believed to be the first quantitative determinations of these relaxations for any deep levels in any semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
