Abstract
In order to study defects that create deep energy levels in semiconductors which act as carrier traps, Charge Transient Spectroscopy using heavy ion microbeams (HIQTS) was developed at JAEA Takasaki. The HIQTS system was connected with the heavy ion microbeam line of the 3MV Tandem accelerator. Using the HIQTS system, deep levels in 4H-SiC Schottky barrier diodes irradiated with 3MeV-protons were studied. As a result, a HIQTS peak with an activation energy of 0.73eV was observed. In addition, local damage in 6H-SiC pn diodes partially irradiated with 12MeV-O ion microbeams was studied using HIQTS. With increasing 12MeV-O ion fluence, charge collection efficiency in locally damaged areas decreased and HIQTS signals increased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.