Abstract
In order to study defects that create deep energy levels in semiconductors which act as carrier traps, Charge Transient Spectroscopy using heavy ion microbeams (HIQTS) was developed at JAEA Takasaki. The HIQTS system was connected with the heavy ion microbeam line of the 3MV Tandem accelerator. Using the HIQTS system, deep levels in 4H-SiC Schottky barrier diodes irradiated with 3MeV-protons were studied. As a result, a HIQTS peak with an activation energy of 0.73eV was observed. In addition, local damage in 6H-SiC pn diodes partially irradiated with 12MeV-O ion microbeams was studied using HIQTS. With increasing 12MeV-O ion fluence, charge collection efficiency in locally damaged areas decreased and HIQTS signals increased.
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