Effective Capacitance Research Articles

Analysis of the parasitic capacitance effects on the layout of latch-based sense amplifiers for improving SRAM performance

Static random-access memory (SRAM) technology is utilized in designing cache memory to enhance the processing performance of computer systems. The sense amplifier (SA) circuit, a crucial component of memory design, significantly impacts data access time and power consumption. In comparison to conventional differential sense amplifiers (DSA) designs, latch-based sense amplifiers (LSA) used in memory-based computing platforms have specific requirements, including robust noise resistance in harsh working environments and low power consumption, particularly for internet of thing (IoT) embedded computing applications. However, the performance can be degraded due to various factors that arise during the layout, such as conductor resistance or the development of parasitic capacitance. Therefore, this study employs low-voltage 22 nm UMC CMOS technology for LSA design layout and analyzes the factors influencing design performance post-layout process. Layout design optimization techniques are applied to mitigate the impact of parasitic capacitance on important signal lines such as data line/data line bar (DLL/DLLB). Based on the performance analysis results, it is possible to achieve a reduction in power consumption of up to 15% and a 5% decrease in read delay time by implementing circuit layout LSA design optimization techniques.

Role of oxygen vacancy on rapid densification and giant dielectric properties of flash sintered Ca2+ and Ta5+ co-doped TiO2 ceramics

(Ca, Ta) co-doped TiO2 ceramics were successfully prepared using flash sintering technology, and the effects of oxygen vacancies on the rapid densification and giant dielectric properties were studied. The results suggest that the maximum volume fraction of oxygen vacancies in flash-sintered samples is approximately 10%. Oxygen vacancies decrease the barrier energy level of atomic diffusion and provide convenient diffusion channels, resulting in rapid densification of the sample within 24 min at 1100 °C. All flash-sintered samples exhibit high relative density, exceeding 95%. Oxygen vacancies promote the electron-pinning defect dipole effect at low temperatures. As the temperature increases, carriers such as oxygen vacancies move to the grain boundary, forming an internal barrier layer capacitance effect. The optical dielectric constant reaches 7.25 × 104, and the dielectric loss drops to 0.09. Oxygen vacancy play an important role in both flash sintering technology and the giant dielectric properties of co-doped TiO2 ceramics.

An investigation for optical, photocatalytic, photoluminescence and dielectric properties of Cd0.40Ni0.60ZnO2 annealed nanocomposites

We report here the optical, photoluminescence (PL), and dielectric properties of Cd0.40Ni0.60ZnO2 nanocomposites annealed between 200 and 600oC. An increase in annealing temperature (Tann) up to 600oC correlates with a gradual increase in the crystallite and particle sizes. The surface area, pore radius, and pore volume are increased as Tann increases from 200oC to 300oC, and then decreased, but still higher than of 200oC. Similar behaviors were obtained for the absorbance carrier density, photocatlytic efficiency, degradation rate, PL intensity, dielectric constant, dielectric loss, ac conductivity, F-factor, series resistance, and electronic polarizability. While the energy gap, binding energy, impedance of grains and their boundaries, and effective capacitance show an opposite behavior. The relaxation times at the peak of dielectric parameters are between 11.54 and 159.24ns and between 35.23 and 24273.73ns, respectively. The Cole-Cole plot shows a single semicircle at Tann < 400oC and two successive semicircles at Tann> 500oC. The energy of PL of visible emissions is independent on the chosen Tann. These findings indicated that the nanocomposite annealed at 300oC can be used for water purification, telecommunications, solar cells, supercapacitor, and white light-emitting diodes (LEDs).

Planar antenna design for contactless energizing applications: resonance analysis

Advances in medical technology suggest that the application of implantable medical devices or Smart Hospital Devices (SHD) can enhance the control and treatment of chronic disorders. However, most of these developments require an electrical power source for operation, making the use of batteries unfeasible. This paper presents the design and resonance analysis of four different geometries for the fabrication of planar antennas as an alternative to a contactless power supply. Previously published software [19] was used to calculate the electrical parameters for each coil design. Operating trials were executed under laboratory conditions, and a bracket manufactured using polylactic acid (PLA) through a 3D printer was used to accurately define the distances between coils to achieve correct alignment between them. Based on the experimental results, it was possible to calculate the resonant frequency of the inductive links at a 5 mm spacing. Similarly, it is possible to calculate the capacitive effect necessary to improve the resonant circuit in different transmitter-receiver planar antenna pairs. The most efficient combination to induce voltage in these links is to use the hexagonal profile design as a transmitter and receiver antenna, applying a sinusoidal signal with 8 MHz frequency.

Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects

Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects

High-Detectivity and Broadband MoS2 Phototransistor Array by Coupling Negative Capacitance and Local Surface Plasmon Resonance Effects

High-Detectivity and Broadband MoS₂ Phototransistor Array by Coupling Negative Capacitance and Local Surface Plasmon Resonance Effects

From interface effect to bulk effect: Probing the capacitive coupling enhancement mechanism to achieve high performance DC droplet-based nanogenerator

The DC droplet-based nanogenerator (DNG) technology has opened up a new avenue for high-entropy water energy harvesting. However, the conventional DC DNG relies on the interface effect to generate a limited surface charge density, which severely restricts its electrical performance. Here, inspired by the MOS transistors, a novel total current DNG (TC-DNG) platform with back-gate modulation structure is developed, successfully realizing the transform from interface effect to bulk effect. By using the rationally patterned DNG as triboelectric probe, an intriguing capacitive coupling enhancement mechanism is discovered. With such a mechanism, the nanogenerator could employ both the capacitive coupling effect of the back-gate electrode and the self-exciting effect of droplet charge-shuttles to achieve a significantly enhanced performance in both charge transfer and voltage output. As a result, this TC-DNG provides a transferred charge of 30 nC per droplet and an output voltage of 800 V and is capable of illuminating 480 high-brightness LEDs without using any power management circuit. In addition, this TC-DNG could easily adapt to a wide range of application scenarios owing to the interchangeability of the back-gate material. This work could inspire further innovations in energy transfer mechanism and harvesting technology at the liquid-solid interface.

Experimental Study on the Comparison between Network Microstructure Titanium Matrix Composites and Ti6Al4V on EDM Milling.

Network microstructure titanium matrix composites (NMTMCs), featuring Ti6Al4V as the matrix and network-distributed TiB whiskers (TiBw) as reinforcement, exhibit remarkable potential for diverse applications due to their superior physical properties. Due to the difficulty in machining titanium matrix composites, electrical discharge machining (EDM) stands as one of the preferred machining techniques for NMTMCs. Nevertheless, the compromised surface quality and the recast layer significantly impact the performance of the workpiece machined by EDM. Therefore, for the purpose of enhancing the surface quality and restraining the defects of NMTMCs, this study conducted comparative EDM milling experiments between NMTMCs and Ti6Al4V to analyze the effects of discharge capacitance, charging current, and pulse interval on the surface roughness, recast layer thickness, recast layer uniformity, and surface microcrack density of both materials. The results indicated that machining energy significantly influences workpiece surface quality. Furthermore, comparative experiments exploring the influence of network reinforcement on EDM milling revealed that NMTMCs have a higher melting point, leading to an accumulation phenomenon in low-energy machining where the reinforcement could not be completely removed. The residual reinforcement in the recasting layer had an adsorption effect on molten metal affecting the thermal conductivity and uniformity within the recasting layer. Finally, specific guidelines are put forward for optimizing the material's surface roughness, recast layer thickness, and uniformity, along with minimizing microcrack density, which attain a processing effect that features a roughness of Ra 0.9 μm, an average recast layer thickness of 6 μm with a range of 8 μm, and a surface microcrack density of 0.08 μm-1.

Comprehensive analysis of a thiazole-substituted corrosion inhibitor's impact on N80 carbon steel in acidic conditions: Integrating computational predictions with experimental verifications

The present investigation elucidates the effectiveness of a newly developed organic inhibitor, namely 6,6-diphenyl-2,3-dihydroimidazo[2,1-b]thiazol-5(6H)-one (PHIT) in inhibiting the corrosion of N80 carbon steel (N80-CS) in 15 wt% HCl at 303 K. An integrative approach combining theoretical insights through Density Functional Theory (DFT) and molecular dynamics (MD) simulations with empirical data derived from a suite of analytical techniques (namely, weight loss measurements, electrochemical impedance spectroscopy (EIS), potentiodynamic polarization (PDP), and scanning electron microscopy (SEM)), was employed to assess the corrosion inhibition performance. The research identified the thiazolone fragment as the predominant site of activity within the PHIT molecule. According to EIS results, a significant reduction in the effective double-layer capacitance from 174 (blank) to 36.17 μF/cm2 was registered following the addition of 5 × 10−3 mol/L PHIT to the HCl medium. Moreover, at a low concentration of 10−4 mol/L, the inhibition efficiency reached a maximum of 95 %. The immersion time had a significant effect on the inhibitor's polarization resistance, peaking at 48 h (596 Ω cm2), then experiencing a minor reduction at 72 h (457 Ω cm2), in comparison to the blank measurement at 0.5 h (231 Ω cm2). Besides, the inhibitor demonstrated a high degree of effectiveness across various temperatures with a slight decrement in efficiency from 96.5 % at 303 K to 94 % at 363 K. PDP results confirmed the tested compound as an anodic-type inhibitor. These results affirmed the potential of PHIT as a highly efficacious organic inhibitor for N80-CS in acidic conditions, encouraging further development of its derivatives.

Performance investigation of ferroelectric L-shaped tunnel FET with suppressed corner tunneling for low power applications

In this work, a ferroelectric L-shaped tunnel FET (FE-LSTFET) is introduced to offer improvement in various DC and analog/high-frequency parameters. In this design, the incorporated FE layer enhances the vertical electric field at the source-channel interface, which improves the tunneling rate of charge carriers during the ON-state. The effect of negative capacitance (NC) and L-shaped N+ pocket causes dominance of vertical tunneling over corner tunneling (mainly at low gate voltages), which in turn reduces the transition voltage and current from 0.85 to 0.25 V and 1.2 × 10-8 to 5.67 × 10-11 A/µm respectively, thereby improving parameters such as ION, IOFF, and SSavg. Further, optimization of the thickness and doping concentration helps to keep the N+ pocket in fully depleted mode and consequently, ION/IOFF is increased from 0.3 × 1012 to 1.2 × 1014 and SSavg is reduced from 52 to 30 mV/decade. Subsequently, NC parameters such as remanent polarization (Pr) and coercive electric field (Ec) are optimized to increase the memory window, which further improves the read margin of FE-LSTFET as a memory device. Furthermore, TCAD-based simulation results show that optimizing the FE thickness improves ION and IOFF in the order of ∼ 1 and ∼ 2, respectively compared to those of C-LSTFET. With an optimum drain-overlap length, IOFF is shown to reduce from 6.6 × 10-17 to 5.43 × 10-19 A/µm due to a reduction in the SRH generation rate of the charge carriers. Despite the degradation in Cgg due to drain-overlap by the stack of FE and SiO2 layers, a significant increase in e-BTBT helps in achieving a transconductance of 2.48 × 10-4 S/µm, thus leading to a large cut-off frequency of 34.12 GHz. Next, analysis of the FE-LSTFET-based inverter shows significant improvements in several parameters including propagation delay and full swing. Moreover, FE-LSTFET shows more reluctance to self-heating effects than C-LSTFET as ION/IOFF is increased by an order of ∼ 3 at 500 K. Lastly, the performance of FE-LSTFET is benchmarked with existing TFET designs indicating that FE-LSTFET is suitable as a high-speed and low-power memory device.

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Here, we present a novel approach to employing a negative capacitance (NC) phenomenon in the blocking oxide of charge trap flash (CTF) memory. To achieve this, we developed an inversible mono-domain like ferroelectric (IMFE) film through high-pressure post-deposition annealing in a forming gas at 200 atm (FG-HPPDA). The FG-HPPDA process enables to form a uniform alignment of domains and facilitates invertible domain switching behavior in ferroelectrics, generating an internal field by the flexo-electric effect as well as interface-pinned polarization by chemical reaction. Subsequently, to stabilize the NC effect, we fabricated the IMFE/Al2O3 heterostructure, which exhibits an outstanding capacitance-boosting feature. Finally, we successfully demonstrate unprecedented CTF memory with the NC effect in a blocking oxide. Our unique CTF device shows the improved performance (maximum incremental-step-pulse-programming (ISPP) slope ∼1.05) and a large MW (>8 V), attributed to the capacitance boosting by NC phenomenon.

Tackling capacitive coupling in broad-band spectral electrical impedance tomography (sEIT) measurements by selecting electrode configurations

SUMMARY Electromagnetic (EM) coupling effects including both inductive and capacitive coupling have long been an essential problem in broad-band spectral electrical impedance tomography (sEIT) measurements at the field scale. Efforts have been made to remove EM coupling numerically or to suppress the effects by modified data acquisition strategies. For near-surface applications with relatively small survey layouts, inductive coupling can be well removed in the mHz to kHz frequency range. With the use of shielded coaxial cables and so-called active electrodes where the amplifiers are mounted at the electrodes, capacitive coupling in sEIT measurements can also be reduced. However, it remains challenging to cope with capacitive coupling between the cable shield and the ground, especially in resistive field conditions. The aim of this study is to deal with this type of capacitive coupling effect by identifying and filtering out sEIT measurements that are strongly affected by capacitive coupling. Based on a correction method for capacitive coupling proposed in a previous study, an approach to estimate measurement errors due to capacitive coupling is presented first. In the second step, a workflow was proposed to calculate the capacitive coupling strength (CCS) for each electrode configuration, which is defined as the ratio of the imaginary part of the impedance induced by capacitive coupling and the imaginary part of the impedance due to the subsurface electrical conductivity. In the final step, measurements with low CCS were selected for inversion and the results were compared with inversion results obtained using the previously developed correction approach. It was found that the filtering method based on CCS is more capable in tackling capacitive coupling compared to using model-based corrections. Spectrally consistent sEIT results up to kHz were obtained using the newly developed filtering method, which were not achieved in previous work using model-based correction.

Facile synthesis of cryogenically controlled cobalt-nickel-based Prussian blue analogues for high-performance symmetric supercapacitors

Cobalt hexacyanoferrate (CoHCF) with high energy density as a potentially useful electrode for energy storage systems still suffers from inferior rate capability and low cycling performance due to high-spin nitrogen-coordinated Co ions. While nickel hexacyanoferrate (NiHCF) with low energy density can exhibit great cycling stability due to the electrochemical inertness of Ni. Herein, we have developed a series of cobalt nickel hexacyanoferrate (CoNiHCF) via a facile cryogenically controlled co-precipitation method. We explored the Co/Ni molar ratio and synthesis temperature on the effects of the specific capacitance in detail. As supercapacitor cathode, the Co0.7Ni0.3HCF with the Co/Ni molar ratio of 0.7:0.3 synthesized at 0 °C can exhibit a high specific capacitance of 406 F g−1 at 1 A·g−1 with capacitance retention of 81.89 % after 5000 cycles. The exceptional electrochemical performance is ascribed to the upgraded conductivity resulting from the coexistence of bimetallic components, the low particle size caused by the moderate introduction of Ni, the low interstitial water content, and the synergistic effect between Co and Ni. Moreover, the symmetric supercapacitor (SSC) of Co0.7Ni0.3HCF//Co0.7Ni0.3HCF can provide a high energy density of 72.96 W h kg−1 and 40.96 W h kg−1 at specific powers of 2876 W kg−1 and 28,577 W kg−1, respectively with a capacitance retention of 74.83 % after 4000 cycles.

An improved small‐signal model for GaN HEMTs devices

AbstractAn improved small‐signal model applied to GaN‐based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut‐off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S‐parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.

An ultrahigh hydrogen production rate of photocatalyst Fe2S2(CO)6/MoS2/CdS integrated mimic hydrogenase and capacitor for H2 evolution with longer lifetime of photoexcited electrons

The hydrogenase mimics provide an innovative strategy for photocatalytic hydrogen production; however, the efficiency mismatch between electron production and utilization results in low hydrogen production rate. Herein, we report the integration of non-noble metal cocatalyst MoS2 decorated with hydrogenase model complex Fe2S2(CO)6 and CdS QDs to assemble Fe2S2(CO)6/MoS2/CdS QDs, which exhibited an excellent hydrogen production rate of 10,836 μmol/g/h. This rate is 127.4, 9.1, and 1.6 times higher than that of CdS QDs, Fe2S2(CO)6/CdS QDs, and MoS2/CdS QDs, respectively. In comparison to CdS or MoS2/CdS, transient photovoltage (TPV) measurements revealed that the photovoltage response of Fe2S2(CO)6/MoS2/CdS increased numerically by 3.3 times; meanwhile, Fe2S2(CO)6/MoS2/CdS significantly extended the lifetime of photo-generated electrons. The excellent performance was attributed to the distinct capacitance effect and functional active site of Fe2S2(CO)6/MoS2/CdS, which boosted electron storage and redistribution at the interface to alleviate recombination losses and facilitate hydrogen production.

Redox transformation of bismuth active units encapsulated on carbon nanorods for efficient fluoride Electrosorption: Synergistic roles of Faradaic effect and EDL capacitance

Remediation of fluoride in groundwater through electrosorption to cope with its high charge density and the smallest anion radius remains a promising strategy. Composite carbon materials obtained by calcining metal–organic frameworks contribute to the performance of conventional fluoride electrosorption systems. This study provides a redox-active electrode (MBiC@tE) that incorporates the Faradaic ion trapping effect for fluoride removal. Under potential control, MBiC@tE reversibly traps/releases fluoride anions from the aqueous solution through the combined roles of Faradaic pseudocapacitance and electrical double layer capacitance, with an electrosorption capacity of approximately 37.9 mgF- gelectrode-1. The target contaminant anions are directly involved in the Faradaic reaction on the bismuth sites, with the formation of Bi-F bond excited by an electric field, thus resulting in the removal of fluoride as a consequence of the generation of insoluble substance (BiF3). Furthermore, as expected (Bi0 + 3F- ⇌ BiF3 + 3e-), the working electrode exhibits good reversibility and maintains a high fluoride removal capacity even after multiple cycles. This study presents a comprehensive elucidation on the synergistic roles of Faradaic effect and electrical double layer capacitance induced by the electric field, and offers profound insights into the phase transition of bismuth and its affinity for fluoride during the electrosorption.

Zirconium-based metal–organic frameworks/porous carbon hybrids as high-performance anode materials for highly stable lithium- and potassium-ion batteries

Metal-organic framework (MOF)-derived carbon materials have been widely investigated as advanced electrode materials. However, post-synthetic modifications suffer from certain limitations in morphology, surface area, and pore size control. Herein, we report a simple strategy to synthesize surface-confined Zirconium(Zr)-based MOF UiO-66-NH2 carbon hybrids (Zr-MOF@C; denoted as Zr-MOF, Zr-MOF@C10, Zr-MOF@C25, and Zr-MOF@C50) through a covalent assembly/amide linkage between the MOFs and hierarchical porous carbon (PC) in various proportions under solvothermal conditions. Zr-MOF@C hybrids have been utilized as the anode materials for lithium- (LIBs) and potassium-ion batteries (KIBs). In LIBs, the Zr-MOF@C10, Zr-MOF@C25 and Zr-MOF@C50 anodes delivered the discharge capacities of 126, 65 and 94 mA h g−1 at 100 mA g−1 after 100 cycles, respectively. In KIBs, the Zr-MOF@C10 and Zr-MOF@C25 exhibited the high discharge capacities of 78 and 70 mA h g−1 at 100 mA g−1 over 100 cycles. In addition, the Zr-MOF@C25 and Zr-MOF@C50 anodes exhibited an outstanding rate capability with a reversible capacity of ∼166 mA h g–1 vs. K/K+ and 176 mA h g–1 for Li/Li+, respectively, while well-maintained long-term cyclic stabilities of ∼57 mA h g–1 (Zr-MOF@C25 vs. K/K+) and ∼140 mA h g–1 (Zr-MOF@C50 vs. Li/Li+) at 1 A g–1 over 1000 cycles. The electrochemical kinetics studies revealed that Li+ and K+ storage efficiencies of all anodes were dominated by a surface-charge capacitive effect and diffusion-driven charge storage mechanism, respectively. These findings provide new insights for designing high-performance surface-confined MOF-based carbon composite materials for next-generation high-energy storage devices.

Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications

AbstractThe effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When the device characteristics are compared, the difference in DC characteristics is negligible. The RF performance in terms of the current‐gain cut‐off frequency (fT) and maximum oscillation frequency (fmax) substantially depend on the T‐gate head size. For clarifying the T‐gate head size dependence, small‐signal modeling is conducted to extract the parasitic gate capacitance and Rg. When the T‐gate head size is reduced from 1.08 to 0.83 μm, Rg increases by 82%, while fT and fmax improve by 27% and 26%, respectively, because the parasitic gate–source and gate–drain capacitances reduce by 19% and 43%, respectively. Therefore, minimizing the parasitic gate capacitance is more effective that reducing Rg in our transistor design and fabrication, leading to improved RF performance when reducing the T‐gate head size.

Pyroelectric-Accelerated Perovskite Photodetector for Picosecond Light Detection and Ranging.

Light detection and ranging (LiDAR) is indispensable in applications such as unmanned aerial vehicles, autonomous driving, and biomimetic robots. However, the precision and available distance of LiDAR are constrained by the speed and sensitivity of the photodetector, necessitating the use of expensive and energy-consuming avalanche diodes. To address these challenges, in this study, a pyroelectricity-based acceleration strategy with 2D-(graded 3D) perovskite heterojunction is proposed to achieve a record high speed (27.7 ns with an active area of 9 mm2, and 176 ps with an active area of 0.2 mm2) and high responsivity (0.65 A W-1) at zero bias. This success is attributed to the unique mechanism where the electrons from the pyroelectric effect at the Cl-rich 2D/3D interface directly recombine with excess holes during light-dark transitions, breaking speed limitations related to carrier mobility and capacitive effect. Furthermore, the introduced pyroelectric effect significantly enhances the photoresponse, resulting in a self-powered external quantum efficiency exceeding 100%. The study also demonstrates precise position detection at the centimeter level. In conclusion, this research presents a pioneering approach for developing high-speed photodiodes with exceptional sensitivity, mitigating energy and cost concerns in LiDAR applications.

ZnPc based multifunctional devices designed as fast capacitors, rectifiers, infrared detectors and microwave resonators adequate for 6 G technology applications

Herein Zinc phthalocyanine (ZnPc) based multifunctional devices are fabricated and characterized. The device fabrication included formation of an Au nanosheets onto n-Si wafers and coating these nanosheets with 500 nm thick ZnPc layer. Silver and platinum were used to form a Schottky and an ohmic contacts with n-Si and ZnPc, respectively. The device hybrid structure (Ag/n-Si/Au/p-ZnPc/Pt; abbreviated as ASZ) is composed of Ag/n-Si Schottky arm and p- and n- layers forming pn junction separated by Au nanosheets. Electrical and photoelectrical measurements on the ASZ devices have shown their ability to perform as conventional metal-oxide-semiconductor capacitors (CMOS). These CMOS devices showed light and frequency controlled charge accumulation, depletion and inversion mechanisms within the range of 1.0–50 MHz. The flat band and threshold voltages of the ASZ capacitors are engineered by the imposed ac signal frequency and by infrared (IR) light. In addition, ASZ devices performed as biasing controlled IR photosensors and as current rectifiers. A rectification ratio of 103, IR light sensitivity of 39, specific detectivity of .96 ×109 Jones and current responsivity exceeding 9.0 mA W−1 are recorded at biasing voltage of 4.5 V. Moreover ASZ devices displayed microwave resonator characteristics presented by negative capacitance effect, resonance –antiresonance phenomena and high microwave cutoff frequency. The latter is larger than 10 GHz nominating the device for 6 G technology applications.