Capacitively Coupled Plasma Research Articles

Impedance matching assistance based on frequency modulation for capacitively coupled plasmas

The efficiency and repeatability of capacitively coupled plasma (CCP) processes are highly dependent on achieving precise impedance matching between the plasma load and the RF power supply. This paper presents a numerical investigation of the role of frequency modulation in enhancing impedance matching of RF CCPs, a technique that can be critical to maintaining operational efficiency and plasma stability. Through a detailed simulation approach, the research explores how variations in the driving frequency impact plasma characteristics and electrical parameters, particularly focusing on the CCP’s impedance behavior. The simulations demonstrate that when impedance matching is achieved at a fixed fundamental frequency of 13.56 MHz, changes in driving frequency will lead to reduced power coupling efficiency and increased reflection. The study introduces a frequency modulation strategy that allows us to re-establish high-quality impedance matching after changes of the plasma impedance occur, e.g., due to changes of the variable capacitor settings inside the matchbox or gas pressure, thereby improving the CCP’s performance. As the driving frequency can be adjusted electrically, adjusting the impedance matching by frequency modulation is much faster than based on mechanical adjustments of variable capacitors inside the matching and could, thus, allows quicker matching. The findings underscore the impact of frequency modulation on power absorption efficiency and highlight the sensitivity of impedance matching to driving frequency fluctuations. This study provides a foundation for further exploration into the optimization of RF CCP systems with the potential to enhance process control and plasma performance across a range of industrial applications, especially pulsed CCPs.

Ar/CF4 capacitively coupled plasma generated using 40 MHz sinusoidal and 800 kHz rectangular waveform voltages

Abstract This article discusses the characteristics of an Ar/CF4 capacitively coupled plasma (CCP) excited using 40 MHz sinusoidal and 800 kHz rectangular voltage waveforms. The simulations focus on the effect of the low frequency (LF) rectangular wave duty cycle (defined as the period at negative voltage) on the plasma properties and uniformity for constant 100 W power at 40 MHz and 20 mTorr gas pressure. Given the importance of kinetic effects in low pressure CCPs, a hybrid plasma model is used. This model treats electrons as particles using the particle-in-cell formalism while ions and neutral species are represented as fluids. By incorporating electron kinetic effects, this approach allows for the accurate modeling of low-pressure CCPs with complex plasma chemistries. Results show that, at 80% duty cycle, the peak in the density of all species is near the edge of the electrodes. As the LF rectangular wave duty cycle is decreased while keeping the 40 MHz power fixed, the species’ densities increase, the 40 MHz radio-frequency voltage decreases, and the peak in species’ densities shifts towards the chamber center. These trends can be explained based on how the LF voltage modulates the coupling of 40 MHz power to the electrons. Under the conditions considered, the plasma is mostly produced through electron stochastic heating at the sheath edge by the 40 MHz voltage. The 40 MHz couples to the electrons more efficiently when the LF voltage at the powered electrode sheath is small and the sheath is thin. The plasma is produced relatively uniformly in the inter-electrode region during this phase. Therefore, at small duty cycles when the powered electrode sheath is thin for a long time, the plasma is uniform and requires a smaller 40 MHz voltage to deposit 100 W at 40 MHz in the plasma. When the LF voltage in the powered electrode sheath is large and negative, plasma production is weak and occurs at the edge of the powered electrode where the sheath is thinner. At large duty cycles, the plasma is efficiently produced for only a short period, necessitating a larger 40 MHz voltage. The plasma density also peaks near the electrode edge at large duty cycles.

Transition from afterglow to streamer discharge in an atmospheric capacitively coupled micro-plasma jet

This Letter focuses on the discharge mechanisms of an atmospheric pressure micro-plasma jet optimized for endoscopic applications in biology and medicine. This capacitively coupled plasma (CCP) features a concentric double flow allowing for shielding the Helium or Neon plasma gas with carbon dioxide from the humid ambient air. High-resolution optical emission spectroscopy allows for the analyses of the Stark effect of the He I 492.19 nm and the Hydrogen Hβ lines to determine the electric field (EF) and the electron density spatially resolved along the discharge expansion outside the source. EF in Neon at atmospheric pressure was reliably determined with the Stark shift measurement of the weak Ne I line at 515.196 nm. In both gases, the EF diagnostic revealed a steep transition from CCP afterglow to streamer discharge with a magnitude up to 30 kV/cm. This research is a significant step forward in the field of plasma medicine with a plasma source capable of delivering a reactive chemistry with or without an intense EF to the target.

On the in-situ determination of the effective secondary electron emission coefficient in low pressure capacitively coupled radio frequency discharges based on the electrical asymmetry effect

Abstract We present a method for the in-situ determination of the effective secondary electron emission coefficient (SEEC, γ) in a capacitively coupled plasma (CCP) source based on the γ-dependence of the DC self-bias voltage that develops over the plasma due to the electrical asymmetry effect (EAE). The EAE is established via the simultaneous application of two consecutive radio-frequency harmonics (with a varied phase angle) for the excitation of the discharge. Following the measurement of the DC self-bias voltage experimentally, particle-in-cell/Monte Carlo collision simulations coupled with a diffusion-reaction-radiation code to compute the argon atomic excited level dynamics are conducted with a sequence of SEEC values. The actual γ for the given discharge operating conditions is found by searching for the best match between the experimental and computed values of the DC self-bias voltage. The γ ≈ 0.07 values obtained this way are in agreement with typical literature data for the working gas of argon and the electrode material of stainless steel in the CCP source. The method can be applied for a wider range of conditions, as well as for different electrode materials and gases to reveal the effective SEEC for various physical settings and discharge operating conditions.

Low-damage optical manufacturing via plasma finishing and figuring

Precision optical components have stringent requirements on surface roughness, form error, and subsurface damage for superior performance. However, conventional grinding, lapping, and polishing processes of fused silica inevitably introduce subsurface damage (SSD) due to the use of abrasives. Thus, this paper proposes an abrasive-free, low-damage manufacturing process for fused silica optical components, which combines inductively coupled plasma (ICP) for SSD recovery and capacitively coupled plasma (CCP) for form error correction. This paper mainly aims to reveal the advantages and challenges of the combined plasma process. The SSD recovery capability of ICP finishing was first verified. The comparison of surface morphology after buffered oxide etch (BOE) etching and CCP etching revealed that extensive surface roughening is caused by plasma etching rather than SSD. Experimental studies on the combination of ICP and CCP demonstrated that ICP finishing can not only recover SSD but also inhibit the surface roughening by plasma etching. The investigation of form error after ICP finishing revealed that the induced form error consists of workpiece distortion and localized deformation with a crater-like structure, affecting the precision and duration of CCP figuring. The combined plasma process was conducted and a low-damage surface with roughness less than Sa 0.3 nm and form error less than RMS 20 nm was achieved.

Fast simulation strategy for capacitively-coupled plasmas based on fluid model

Fluid simulations are widely used in optimizing the reactor geometry and improving the performance of capacitively coupled plasma (CCP) sources in industry, so high computation speed is very important. In this work, a fast method for CCP fluid simulation based on the framework of Multi-physics Analysis of Plasma Sources (MAPS) is developed, which includes a multi-time-step explicit upwind scheme to solve electron fluid equations, a semi-implicit scheme and an iterative method with in-phase initial value to solve Poisson's equation, an explicit upwind scheme with limited artificial diffusion to solve heavy particle fluid equations, and an acceleration method based on fluid equation modification to reduce the periods required to reach equilibrium. In order to prove the validity and efficiency of the newly developed method, benchmarking against COMSOL and comparison with experimental data have been performed in argon discharges on the Gaseous Electronics Conference (GEC) reactor. Besides, the performance of each acceleration method is tested, and the results indicated that the multi-time-step explicit Euler scheme can effectively decline the computational burden in the bulk plasma and reduce the time cost on the electron fluid equations by half. The in-phase initial value method can greatly decrease the iteration times required to solve linear equations and lower the computational time of Poisson's equation by 77 %. The acceleration method based on equation modification can reduce the periods required to reach equilibrium by two-thirds.

Spontaneous asymmetry effect induced by uniform magnetic fields in capacitively coupled plasmas under perfectly symmetric conditions

Abstract Introducing asymmetry in capacitively coupled plasmas (CCPs) is a common strategy for achieving independent control of ion mean energy and flux. Our 1d3v particle-in-cell/Monte Carlo collision simulations reveal that a uniform magnetic field within a specific range can induce spatial asymmetry in low-pressure CCPs, even under perfectly symmetric conditions. This asymmetry, characterized by a shift in the plasma density distribution and significant differences in electron kinetics between the two sides of the plasma, leads to strong ionization and most electron losses on the low-density side, while the high-density side experiences weak ionization and minimal electron losses. The underlying mechanism triggering this spontaneous asymmetry is the differential influence of the magnetic field on low-energy (local) and high-energy (relatively nonlocal) electrons. Under conditions of low pressure and an appropriate magnetic field, this disparity in electron kinetic behavior leads to a spontaneous amplification of the asymmetry induced by random fluctuations until a steady state is reached, culminating in a spontaneous asymmetric effect.

Investigating instabilities in magnetized low-pressure capacitively coupled RF plasma using particle-in-cell (PIC) simulations

The effect of a uniform magnetic field on particle transport in low-pressure radio frequency (RF) capacitively coupled plasma (CCP) has been studied using a particle-in-cell model. Three distinct regimes of plasma behavior can be identified as a function of the magnetic field. In the first regime at low magnetic fields, asymmetric plasma profiles are observed within the CCP chamber due to the effect of E→×B→ drift. As the magnetic field increases, instabilities develop and form self-organized spoke-shaped structures that are distinctly seen within the bulk plasma closer to the sheath. In this second regime, the spoke-shaped coherent structures rotate inside the plasma chamber in the −E→×B→ direction, where E→ and B→ are the DC electric and magnetic field vectors, respectively, and the DC electric field exists in the sheath and pre-sheath regions. The spoke rotation frequency is in the megahertz range. As the magnetic field strength increases further, the rotating coherent spokes continue to exist near the sheath. The coherent structures are, however, accompanied by new small-scale incoherent structures originating and moving within the bulk plasma region away from the sheath. This is the third regime of plasma behavior. The threshold values of the magnetic field between these regimes were found not to vary with changing plasma reactor geometry (e.g., area ratio between ground and powered electrodes) or the use of an external capacitor between the RF-powered electrode and the RF source. The threshold values of the magnetic field between these regimes shift toward higher values with increasing gas pressure. Analysis of the results indicates that the rotating structures are due to the lower hybrid instability driven by density gradients and electron-neutral collisions. This paper provides guidance on the upper limit of the magnetic field for instability-free operation in low-pressure CCP-based semiconductor deposition and etch systems that use the external magnetic field for plasma uniformity control.

Spatially-resolved spectroscopic investigation of the inhomogeneous magnetic field effects on a low-pressure capacitively-coupled nitrogen plasma

Although magnetized plasmas have been frequently used to enhance the process rate or improve the film quality via the control of ion flux as well as energy and plasma density in semiconductor processes, the inhomogeneous magnetic field—which leads to plasma non-uniformity—remains as a problem to be solved. To address this problem, it is essential to conduct a comprehensive assessment of the magnetic effect throughout the entire discharge. Therefore, in the present study, we investigated the magnetic field effects (B < 100 G) on a capacitively-coupled nitrogen plasma based on spectroscopic analyses. The spatially-resolved emission spectra were measured along the radial direction at various vertical positions under the pressures of 10 mTorr and 250 mTorr both with and without magnetic field. By analyzing emission spectra such as N2 FPS, N2 SPS, N2+ FNS, and N I, we were able to obtain the radial distributions of reactive species density, vibrational temperature, and excitation temperature. In low-pressure plasma, with the application of a magnetic field, maximum increases in vibrational temperature and excitation temperature of 462 K and 491 K, respectively, were observed within the bulk region beneath the magnet. This magnetic effect resulted in a significant increase in reactive species density along the radial direction. It was also found that the local enhancement of ion density by magnetic field was strongly related to the increase in excitation temperature and the density of the N2+(B) state. From this result, it is suggested that introducing an asymmetric magnetic field could modulate the spatial distributions of the physical and chemical properties of the plasma.

Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering

Ga2O3 has received increasing interest for its potential in various applications relating to solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based photodetectors presents a challenge due to the intrinsic conductive mechanism of Ga2O3 films. In this work, we fabricated amorphous Ga2O3 (a-Ga2O3) metal–semiconductor–metal photodetectors through capacitive coupled plasma assisted magnetron sputtering at room temperature. Substantial enhancement in the responsivity is attained by regulating the capacitance-coupled plasma power during the deposition of a-Ga2O3. The proposed plasma energy generated by capacitive coupled plasma (CCP) effectively improved the disorder of amorphous Ga2O3 films. The results of X-ray photoelectron spectroscopy (XPS) and current-voltage tests demonstrate that the additional plasma introduced during the sputtering effectively adjust the concentration of oxygen vacancy effectively, exhibiting a trade-off effect on the performance of a-Ga2O3 photodetectors. The best overall performance of a-Ga2O3 photodetectors exhibits a high responsivity of 30.59 A/W, a low dark current of 4.18 × 10−11, and a decay time of 0.12 s. Our results demonstrate that the introduction of capacitive coupled plasma during deposition could be a potential approach for modifying the performance of photodetectors.

Influence of Matching Network on the Discharge Characteristic of Dual—Frequency Capacitively Coupled Ar Plasma

Influence of Matching Network on the Discharge Characteristic of Dual—Frequency Capacitively Coupled Ar Plasma

Preliminary Exploration of Low Frequency Low-Pressure Capacitively Coupled Ar-O2 Plasma

Non-thermal plasma as an emergent technology has received considerable attention for its wide range of applications in agriculture, material synthesis, and the biomedical field due to its low cost and portability. It has promising antimicrobial properties, making it a powerful tool for bacterial decontamination. However, traditional techniques for producing non-thermal plasma frequently rely on radiofrequency (RF) devices, despite their effectiveness, are intricate and expensive. This study focuses on generating Ar-O2 capacitively coupled plasma under vacuum conditions, utilizing a low-frequency alternating current (AC) power supply, to evaluate the system’s antimicrobial efficacy. A single Langmuir probe diagnostic was used to assess the key plasma parameters such as electron density (ne), electron temperature (Te), and electron energy distribution function (EEDF). Experimental results showed that ne increases (7 × 1015 m−3 to 1.5 × 1016 m−3) with a rise in pressure and AC power. Similarly, the EEDF modified into a bi-Maxwellian distribution with an increase in AC power, showing a higher population of low-energy electrons at higher power. Finally, the generated plasma was tested for antimicrobial treatment of Xanthomonas campestris pv. Vesicatoria. It is noted that the plasma generated by the AC power supply, at a pressure of 0.5 mbar and power of 400 W for 180 s, has 75% killing efficiency. This promising result highlights the capability of the suggested approach, which may be a budget-friendly and effective technique for eliminating microbes with promising applications in agriculture, biomedicine, and food processing.

Energy efficient F atom generation and control in CF4 capacitively coupled plasmas driven by tailored voltage waveforms

Abstract Neutral radicals generated by electron impact dissociation of the background gas play important roles in etching and deposition processes in low pressure capacitively coupled plasmas (CCPs). The rate and energy efficiency of producing a given radical depend on the space- and time-dependent electron energy distribution function (EEDF) in the plasma, as well as the electron energy dependent cross sections of the electron-neutral collisions that result in the generation of the radical. For the case of a CCP operated in CF4 gas, we computationally demonstrate that the energy efficiency of generating neutral radicals, such as F atoms can be improved by controlling the EEDF by using tailored voltage waveforms (TVW) instead of single-frequency driving voltage waveforms and that separate control of the radical density and the ion energy can be realized by adjusting the waveform shape at constant peak-to-peak voltage. Such discharges are often used for industrial etching processes, in which the F atom density plays a crucial role for the etch rate. Different voltage waveform shapes, i.e. sinusoidal waveforms at low (13.56 MHz) and high (67.8 MHz) frequencies, peaks- and sawtooth-up TVWs, are used to study their effects on the energy cost / energy efficiency of F atom generation by PIC/MCC simulations combined with a stationary diffusion model. The F atom density is enhanced by increasing the voltage amplitude in the single frequency cases, while the energy cost per F atom generation increases, i.e. the energy efficiency decreases, because more power is dissipated to the ions, as the sheath voltages and the ion energy increase simultaneously. In contrast, using TVWs can result in a lower energy cost and provide separate control of the F atom density and the ion energy. This is explained by the fact that tailoring the waveform shape in this way allows to enhance the high-energy tail of the EEDF during the sheath expansion phase by inducing a non-sinusoidal sheath motion, which results in acceleration of more electrons to high enough energies to generate F atoms via electron-neutral collisions compared to the single frequency cases. Similar effects of TVWs are expected for the generation of other neutral radicals depending on the electron energy threshold and the specific consequences of TVWs on the EEDF under the discharge conditions of interest.

Effect of multi-cusp magnetic fields to generate a high-density hydrogen plasma inside a low pressure H2 cylindrical hollow cathode discharge

Based on probe measurements, the plasma density in a low pressure H2 radio-frequency (RF) magnetized cylindrical hollow-cathode capacitively coupled plasma (CCP) is demonstrated to be enhanced by applying a multi-cusp magnetic field (MCMF). CCPs can be used for fabricating functional thin-films, but are currently limited by low plasma densities of less than or about 1016 m−3. It is found that a maximum plasma density of 2.51, 2.88, and 3.14 × 1016 m−3 is obtained at 3, 4 and 5 Pa, respectively. The employed MCMF arrangement contributes to achieving superior plasma uniformity, both in axial and radial direction, at an RF power of 50 W.

Characteristics of a hybrid radio frequency capacitively and inductively coupled plasma using hydrogen gas

A hybrid combination of a radio frequency (RF) capacitively coupled plasma (CCP) equipped with a ring-shaped hollow powered electrode and an inductively coupled plasma (ICP) with a helical antenna is investigated in hydrogen gas. Characteristics of the RF hybrid plasma are measured by a Langmuir probe at a fixed position in the center between the RF powered and grounded electrode for various CCP powers of 50–150 W. The voltage drop across the CCP is found to be almost independent of the ICP power. The RF hybrid plasma attains a high ion density of the order of 1010 cm−3 between the electrodes even at a low CCP input power of 50 W. The plasma density is strongly affected by the CCP generator power, while the floating potential is controlled by the ICP power, whereas the electron temperature is independent of the ICP power for various CCP powers. The negative ion production is enhanced by increasing the ICP power, resulting in a decrease in the ratio of the negative to the positive charge saturation current detected by the Langmuir probe. The maximum ratio of the negative ion density to the electron density is approximately 8 at a CCP power of 50 W and an ICP power of 250 W.

Kinetic simulations of capacitively coupled plasmas driven by tailored voltage waveforms with multi-frequency matching

Impedance matching is crucial for optimizing plasma generation and reducing power reflection in capacitively coupled plasmas (CCP). Designing these matchings is challenging due to the varying and typically unknown impedance of the plasma, especially in the presence of multiple driving frequencies. Here, a computational design method for impedance matching networks (IMNs) for CCPs is proposed and applied to discharges driven by tailored voltage waveforms (TVW). This method is based on a self-consistent combination of particle in cell/Monte Carlo collision simulations of the plasma with Kirchhoff’s equations to describe the external electrical circuit. Two Foster second-form networks with the same structure are used to constitute an L-type matching network, and the matching capability is optimized by iteratively updating the values of variable capacitors inside the IMN. The results show that the plasma density and the power absorbed by the plasma continuously increase in the frame of this iterative process of adjusting the matching parameters until an excellent impedance matching capability is finally achieved. Impedance matching is found to affect the DC self-bias voltage, whose absolute value is maximized when the best matching is achieved. Additionally, a change in the quality of the impedance matching is found to cause an electron heating mode transition. Poor impedance matching results in a heating mode where electron power absorption in the plasma bulk by drift electric fields plays an important role, while good matching results in the classical α-mode operation, where electron power absorption by ambipolar electric fields at the sheath edges dominates. The method proposed in this work is expected to be of great significance in promoting TVW plasma sources from theory to industrial application, since it allows designing the required complex multi-frequency IMNs.

Self-consistent calculation of the optical emission spectrum of an argon capacitively coupled plasma based on the coupling of particle simulation with a collisional-radiative model

We report the development of a computational framework for the calculation of the optical emission spectrum of a low-pressure argon capacitively coupled plasma (CCP), which is based on the coupling of a particle-in-cell/Monte Carlo collision simulation code with a diffusion-reaction-radiation code for Ar I excited levels. In this framework, the particle simulation provides the rates of the direct and stepwise electron-impact excitation and electron-impact de-excitation for 30 excited levels, as well as the rates of electron-impact direct and stepwise ionization. These rates are used in the solutions of the diffusion equations of the excited species in the second code, along with the radiative rates for a high number of Ar-I transitions. The calculations also consider pooling ionization, quenching reactions, and radial diffusion losses. The electron energy distribution function and the population densities of the 30 excited atomic levels are computed self-consistently. The calculations then provide the emission intensities that reproduce reasonably well the experimentally measured optical emission spectrum of a symmetric CCP source operated at 13.56 MHz with 300 V peak-to-peak voltage, in the 2–100 Pa pressure range. The accuracy of the approach appears to be limited by the one-dimensional nature of the model, the treatment of the radiation trapping through the use of escape factors, and the effects of radiative cascades from higher excited levels not taken into account in the model.

Customized modulation on plasma uniformity by non-uniform magnetic field in capacitively coupled plasma

A two-dimensional fluid model based on COMSOL Multiphysics is developed to investigate the modulation of static magnetic field on plasma homogeneity in a capacitively coupled plasma (CCP) chamber. To generate a static magnetic field, direct current is applied to a circular coil located at the top of the chamber. By adjusting the magnetic field’s configuration, which is done by altering the coil current and position, both the plasma uniformity and density can be significantly modulated. In the absence of the magnetic field, the plasma density exhibits an inhomogeneous distribution characterized by higher values at the plasma edge and lower values at the center. The introduction of a magnetic field generated by coils results in a significant increase in electron density near the coils. Furthermore, an increase in the sets of coils improves the uniformity of the plasma. By flexibly adjusting the positions of the coils and the applied current, a substantial enhancement in overall uniformity can be achieved. These findings demonstrate the feasibility of using this method for achieving uniform plasma densities in industrial applications.

Case study in machine learning for predicting moderate pressure plasma behavior

Modeling and forecasting the dynamics of complex systems, such as moderate pressure capacitively coupled plasma (CCP) systems, remains a challenge due to the interactions of physical and chemical processes across multiple scales. Historically, optimization for a given application would be accomplished via a design of experiment (DOE) study across the various external control parameters. Machine learning (ML) techniques show the potential to “forecast” process conditions not tested in a traditional DOE study and thereby allow better optimization and control of a plasma tool. In this article, we have used standard DOE as well as ML predictions to analyze I-V data in a moderate-pressure CCP system. We have demonstrated that supervised regression ML techniques can be a useful tool for extrapolating data even when a plasma system is undergoing a transition in the heating mode, in this case from the alpha to gamma mode. Classification analysis of control parameters is another possible application of ML techniques that can be deployed for system control. Here, we show that given a large set of measured data, the models can identify the gas ratio in the feed gas as well as correctly identify the operating pressure and electrode gap in almost all the cases.

Synthesis of core–shell nanoparticles with liquid core using magnetron sputtering and capacitively coupled dusty plasmas

We succeeded in depositing amorphous carbon films around tin nanodroplets retained in a capacitively coupled plasma (CCP). High-pressure magnetron sputtering was used for synthesizing tin nanoparticles at the top of a vacuum chamber. Tin nanoparticles were transported to CCP at the bottom of the chamber, and they were trapped in the sheath above an rf electrode. Tin nanoparticles were heated above the mp by ion bombardment in CCP. We introduced methane into CCP to deposit amorphous carbon films around melted tin nanoparticles. The transmission electron microscope (TEM) images of core–shell nanoparticles showed completely spherical cores. We observed the melting of cores at the melting point of metal tin when we heated core–shell nanoparticles in TEM, suggesting that the amorphous carbon films protected cores from the oxidation. In addition, the amorphous carbon films were robust against the volume expansion of the cores due to melting.