Buried Heterostructure Research Articles

Theoretical analysis of the buried heterostructure laser for stable dual-wavelength generation

Stable dual-wavelength emission from a laser is desirable for microwave signal generation using the optical heterodyning method. As both optical wavelengths are generated from the same cavity, the phase noise of the generated microwave signal is minimized. In this work, we exploit the inherent birefringence in the buried heterostructure semiconductor laser to generate dual polarized modes. We carefully analyze the mode competition between various modes in the cavity and propose the desirable gain modification conditions for stable dual mode oscillations when the laser is operating near the threshold. We show that the required asymmetry in the gain for two stable modes can be obtained from the mode confinement factors and facet losses. We also show the applicability of our results to a homogeneously broadened multimode laser.

Slotted surface gratings fabricated by selective area growth of the p-InP cladding layer for BH lasers.

In this paper, we present a novel, to our knowledge, method for the fabrication of slotted surface gratings for buried heterostructure (BH) lasers. In the device fabrication process, SiO2 strips needed for InP current blocking layer growth are reused for the formation of slot grating pattern masks. In the following growth of the p-InP cladding layer, because the slot areas are covered by SiO2, the InP material is grown selectively in only the areas outside the slot areas, forming slots of the surface gratings in the p-InP layer at the same time as the cladding layer growth. Single longitude mode BH lasers having slotted surface gratings have been fabricated successfully, and the spectra show higher than 40 dB side mode suppression ratio (SMSR). The adoption of the method helps to simply the device fabrication and thus lower the device fabrication cost notably.

Single-mode InGaAsP/InP BH lasers based on high-order slotted surface gratings.

A single-mode InGaAsP/InP buried heterostructure (BH) laser based on high-order slotted surface gratings has been fabricated. The introduction of surface slotted grating can simplify the fabrication process of single-mode BH lasers notably. The laser shows a good single-mode emission performance, with larger than 30 dB side-mode suppression ratio (SMSR) when the current is between 200 and 400 mA. Calculations show that the gain coupling mechanism plays a key role for the slot grating to select the emission wavelength. The linewidth of the laser is measured. The fitted Gaussian and Lorentzian linewidths are 1500 and 550 kHz, respectively.

Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band

The introduction of selective area growth (SAG) in a mature semi‐insulating buried heterostructure (SIBH) platform for the realization of photonic integrated circuits on monolithic InP has been demonstrated. A thorough determination of the relations between quantum well thickness, transition energies, and mask geometries is performed on dedicated wafers by means of extensive micro‐X‐Ray diffraction and microphotoluminescence measurements. Based on those results, SAG is used to grow, with a single epitaxy step, AlGaInAs multiple quantum wells heterostructures, to tailor the active regions of Fabry–Pérot and distributed feedback (DFB) lasers emitting in the O‐Band. SIBH DFB lasers are realized, exhibiting threshold currents < 7.2 mA (at 25 °C), and emitting over 100‐nm spectral range in the O‐Band.

Monolithic InAs/InP Quantum Dash Mode-Locked Lasers for Millimeter-Wave-Over-Fiber Mobile Fronthaul Systems

Semiconductor monolithic mode-locked lasers (MLLs) are potential solutions for generating high-speed optical pulses in future mobile fronthaul networks in the millimeter-wave (mmW) bands. Our previous studies have investigated using buried heterostructure (BH) quantum dash (QDash) multi-wavelength lasers for photonic mmW applications. Here we present results from monolithic chip-scale ridge waveguide QDash MLLs for generating and transmitting mmW signals. Through optimizing epitaxy growth, waveguide design, and fabrication process, the five-layer ridge waveguide QDash MLL exhibits superior performance with regard to the coherent comb bandwidths, lasing threshold current, output power, and internal quantum efficiency. The generated mmW frequency at 28.36 GHz exhibits excellent frequency stability, with a drift of less than ± 50 kHz. For the first time, we have utilized the free-running five-layer ridge waveguide QDash MLL to implement single- and dual-optical carrier modulation schemes in the millimeter-wave-over-fiber (mmWoF) systems. Both modulation schemes have achieved satisfactory performance achieving error vector magnitude (EVM) performance much lower than the 3GPP requirements (<12.5%) for future networks. In particular, the single-carrier modulation scheme achieves higher conversion efficiency and improved EVM performance. In contrast, the dual-carrier modulation scheme alleviates the path length matching challenges, offering a low-cost and easy-to-implement solution in different usage scenarios.

Improvement of Power and Efficiency of High-Mesa Semi-Insulating InP: Fe Buried Heterostructure Lasers with Wide Bandgap Layers

High-mesa semi-insulating buried heterostructure (SIBH) lasers with InP: Fe have great potential in high-speed and high-power scenarios, but the leakage current problem under high current injections has always limited their application. In order to solve the issue of low output power and low efficiency for high-mesa SIBH lasers, the mechanism of leakage current generation in InP-based semi-insulating (SI) layers at high injection levels was analyzed through numerical simulation. The deterioration of the device performance is due to the hole current-induced electron leakage current, which results from the reduction of the potential barrier and Fe-Zn interdiffusion. Thus, lasers with wide bandgap layers of InAlAs and ZnCdSe were employed for current blocking, the power and wall-plug efficiency of which were improved by more than 36% and 5%, respectively. For the first time, a SIBH laser based on lattice-matched ZnCdSe barrier layers is proposed, which shows good output performance and high reliability. The introduction of the wide bandgap layer in the SIBH structure establishes potential barriers to confine both carrier leakages at high injection levels, which realizes the high-power and high-efficiency operation of the laser.

Room Temperature, Continuous Wave Quantum Cascade Laser Grown Directly on a Si Wafer

We report the room temperature demonstration of a high power, continuous wave, LWIR quantum cascade laser grown directly on a Si substrate. A new wafer, based on a high efficiency, strain-balanced laser core was processed into a lateral injection buried heterostructure laser geometry. A pulsed efficiency of 11.1% was demonstrated at room temperature, with an emission wavelength of 8.35 μm. With low fidelity, epilayer-up packaging, CW emission up to 343 K was also demonstrated, with a maximum output power of >0.7 W near room temperature.

Depth profiling of AlN and AlxGa1−xN crystals by XPS using Al Kα and Ag Lα line excitation and Ar ion gas cluster ion source

AlGaN-based heterostructures are promising candidates for the fabrication of ultraviolet light-emitting diodes. The analysis of the atomic composition of the grown epitaxial films is important from a technological point of view, allowing precise control over the wavelength and intensity of the emitted light. In this work, the depth profiling of AlN(0001), AlGaN(0001), and AlGaN quantum dot surfaces grown by molecular beam epitaxy was carried out by using angle-resolved x-ray photoelectron spectroscopy (XPS) combined with Ar gas cluster ion source (GCIS) sputtering. Core level shifts in XPS spectra measured by Al Kα and Ag Lα photon sources were determined. We found that sputtering by Ar1000+ ion clusters with an energy of 10 keV creates disorder on the surface and induces changes in surface atomic composition. As a result, depth profiling with a typical surface-sensitive Al Kα photon source is affected by the damaged layer. The application of a less surface-sensitive Ag Lα photon source with high photon energy could suppress the contribution from the damaged surface layer. Combining GCIS sputtering with Ag Lα line XPS measurements is, therefore, very promising for the quantification of atomic composition in the buried epitaxial layers or heterostructures with thicknesses of several tens of nm.

Near‐Field Thermal Profiling and 3D Anisotropic Thermal Analysis of Quantum Cascade Lasers

The development of a scanning near‐field optical microscopy (SNOM) method with high temperature and spatial resolution to probe the thermal behavior of quantum cascade lasers (QCLs) is reported. Specifically, thermal profiling of InGaAs/InAlAs/InP buried heterostructure (BH) mounted epi‐layer side down QCLs is performed. The findings are verified by 3D anisotropic thermal analysis of QCLs with anisotropic thermal conductivities in the superlattice active region. Good agreement is observed between the simulated and the measured time constants. Within this design, various realistic device configurations, such as overhanging the laser chip on the submount and placing different dielectric coatings on the front facet, are considered. Analytical studies of the steady‐state thermal performance of QCL arrays compared to an isolated QCL are demonstrated for high‐power requirements with minimal thermal damage and future application in spectroscopic devices.

High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si

We report on the realization of an InP-based long wavelength quantum cascade laser grown on top of a silicon substrate. This demonstration first required the development of an epitaxial template with a smooth surface, which combines two methods of dislocation filtering. Once wafer growth was complete, a lateral injection buried heterostructure laser geometry was employed for efficient current injection and low loss. The laser emits at a wavelength of ~ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10.8~\mu \text{m}$ </tex-math></inline-formula> and is capable of operation above 373 K, with a high peak power (>4 W) at room temperature. Laser threshold behavior with temperature is characterized by a T0 of 178 K. The far field beam shape is single lobed, showing fundamental transverse mode operation.

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

AbstractLight sources with ultra‐low energy consumption and high performance are required to realize optical interconnects for on‐chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates for this role. In this work, a continuous‐wave PhC nanolaser with an ultra‐low threshold current of 10.2 µA emitting at 1540 nm and operated at room temperature is demonstrated. The lasers are InP‐based bonded on silicon (Si), and comprise a buried heterostructure active region and lateral p–i–n junction, feature CMOS‐compatible drive voltage, and exhibit low self‐heating. Carrier leakage is a fundamental limitation of the lateral pumping scheme that is identified as unwanted spontaneous emission from the InP p–i interface, limiting the injection efficiency to 3% which further decreases at higher current. The effect of fabrication disorder and p‐doping absorption on the Q‐factor is studied experimentally showing that p‐doping limits the Q‐factor to 8000, with a p‐doping absorption coefficient of 120 cm−1.

Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers.

High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are investigated. From the irregularity of the longitudinal mode spacing in the comb spectra, we confirm that under stable passive mode locking, both devices have strong group velocity dispersion (GVD) and corresponding GVD-induced pulse width broadening. After compensation with anomalous dispersion fibers (SMF-28), short pulse trains with sub-ps pulse widths are achieved for both devices. This observation demonstrates our ability to generate high peak power sub-ps pulses using QD MLLs and QW MLLs for many photonic applications of optical communications.

Carrier Diffusion in GaN : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations

We investigate the impact of threading dislocations with an edge component ($a$ or $a+c$ type) on carrier recombination and diffusion in $\mathrm{Ga}\mathrm{N}$(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a $\mathrm{Ga}\mathrm{N}$(0001) layer with a deeply buried (In,$\mathrm{Ga}$)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipolelike energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk $\mathrm{Ga}\mathrm{N}$ and hence also in buried heterostructures.

Reflective Electroabsorption Modulators for Beyond 25 Gb/s Colorless Transmissions

We present a complete characterization of reflective electroabsorption modulators (EAMs) monolithically integrated with semiconductor optical amplifiers (SOAs), components that are capable of operating beyond 50 Gb/s in the C-band. The devices are based on GaInAsP multiple quantum wells on InP substrate, leveraging semi-insulating buried heterostructure waveguide definition and butt-joint integration technologies. Different device configurations, based on 80- and 150-μm long EAMs, are fabricated and characterized in both static and dynamic modes. The frequency response of the 80 μm long EAM is still flat at 26.5 GHz (setup upper limit) whereas the 150 μm long EAM exhibits a 3-dB cutoff bandwidth of 23 GHz. A zero-chirp is achieved for EAM reverse bias voltages between -1.2 and -1.5 V depending on the wavelength. Under large-signal modulation, the frequency chirp induced by the shorter EAM is almost half that of the longer EAM, with their respective peak values being +1.5/-2 and +3.2/-3.7 GHz (rising/falling edges) at 1545 nm (-1.3 V bias, 2.6 V voltage swing). We obtained high dynamic extinction ratios of ~14.5 and ~8 dB from the longer and the shorter EAMs, respectively, when they are operated at 25 Gb/s using non-return-to-zero coding. Finally, we achieved 12 and 16 km colorless transmissions in the C-band (between 1530 and 1545 nm) over a standard single-mode fiber without equalization using the 150- and the 80 μm EAMs, respectively, with 4.5 and 2.5 dB dispersion penalties at a bit error rate of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> .

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy

The effect of various planes was studied when growing epitaxial layers by liquid-phase epitaxy (LPE) on the profiled InP substrates. The studies allowed obtaining buried heterostructures in the InP/InGaAsP system and creating highly efficient laser diodes and image sensors.It was found that protruding mesa strips or in-depth mesa strips in the form of channels formed by the {111}А, {111}B, {110}, {112}A, or {221}A family of planes can be obtained with the corresponding selection of an etching agent, strip orientation, and a method of obtaining a masking coating. It was noted that in the case of the polarity of axes being in the direction of &lt;111&gt;, the cut of mesa strips was conducted along the most densely packaged planes. This cut led to the difference in rates of both chemical etching and epitaxial burying of profiled surfaces.The cut was made along the planes at a low dissolution rate {111}A for a sphalerite lattice, to which the studied material, indium phosphide, belongs. Analysis of planes {110} and {Ī10} showed that the location of the most densely packaged planes {111}A and {111}B relative to them is different.

InAs/InP quantum dash buried heterostructure mode-locked laser for high capacity fiber-wireless integrated 5G new radio fronthaul systems.

We have developed and experimentally demonstrated a highly coherent and low noise InP-based InAs quantum dash (QDash) buried heterostructure (BH) C-band passively mode-locked laser (MLL) with a pulse repetition rate of 25 GHz for fiber-wireless integrated fronthaul 5G new radio (NR) systems. The device features a broadband spectrum providing over 46 equally spaced highly coherent and low noise optical channels with an optical phase noise and integrated relative intensity noise (RIN) over a frequency range of 10 MHz to 20 GHz for each individual channel typically less than 466.5 kHz and -130 dB/Hz, respectively, and an average total output power of ∼50 mW per facet. Moreover, the device exhibits low RF phase noise with measured RF beat-note linewidth down to 3 kHz and estimated timing jitter between any two adjacent channels of 5.5 fs. By using this QDash BH MLL device, we have successfully demonstrated broadband optical heterodyne based radio-over-fiber (RoF) fronthaul wireless links at 5G NR in the underutilized spectrum of around 25 GHz with a total bit rate of 16-Gb/s. The device performance is experimentally evaluated in an end-to-end fiber-wireless system in real-time in terms of error vector magnitude (EVM) and bit error rate (BER) by generating, transmitting and detecting 4-Gbaud 16-QAM RF signals over 0.5-m to 2-m free-space indoor wireless channel through a total length of 25.22 km standard single mode fiber (SSMF) with EVM and BER under 8.4% and 2.9 × 10-5, respectively. The intrinsic characteristics of the device in conjunction with its system transmission performance indicate that QDash BH MLLs can be readily used in fiber-wireless integrated systems of 5G and beyond wireless communication networks.

Mid-infrared quantum cascade laser frequency combs with a microstrip-like line waveguide geometry

In this work, a design for a mid-infrared quantum cascade laser frequency comb source that enhances the high frequency response and the comb characteristics of the device is presented. A state-of-the-art active region, grown on a heavily n-doped InP:Si substrate, was processed into a buried heterostructure with a microstrip-like line waveguide. As a result, the repetition rate frequency frep, around 11.09 GHz, can be locked to an injected narrow-linewidth radio frequency (RF) signal, over a range of more than 200 kHz with an injected power of −10 dBm, which outperforms normal buried heterostructure schemes by an order of magnitude. Moreover, under RF injection at powers higher than 20 dBm, the lasing spectrum is flattened and significantly broadened, from 24 cm−1 to 65 cm−1 in bandwidth, while at the same time, the coherence of the comb is maintained and verified.

Beam stability of buried-heterostructure quantum cascade lasers employing HVPE regrowth

Measurements of beam stability for mid-infrared (IR)-emitting quantum cascade lasers (QCLs) are important for applications that require the beam to travel through air to remote targets, such as free-space communication links. We report beam-quality measurement results of narrow-ridge, 4.6 µm-emitting buried-heterostructure (BH) QCLs fabricated using ICP etching and HVPE regrowth. Beam-quality measurements under QCW operation exhibit M2 < 1.2 up to 1 W for ∼5 µm-wide ridges. 5 µm-wide devices display some small degree of centroid motion with increasing output power (< 0.125 mrad), which corresponds to a targeting error of ∼1.25 cm over a distance of 100 m.

Low-Loss Buried-Heterostructure Optical Waveguide Based on Impurity-Free-Vacancy-Diffusion Quantum Well Intermixing

A new method for fabricating a high-quality buried-heterostructure optical waveguide using quantum well intermixing (QWI) has been demonstrated. By patterning a SiO2 thin film on top of a multiple quantum well (MQW) heterostructure, rapid thermal annealing (RTA) could induce laterally local QWI, resulting in a bandgap blueshift and a simultaneous decrease in the refractive index. Both lateral bandgap and index engineering could be attained along the MQW plane, which could be used for a buried-heterostructure optical waveguide. Two SiO2 strips with 3, 5 and 7 μm windows were fabricated for waveguide on a 1540 nm InGaAsP MQW sample. A 120 nm blueshift under the SiO2 area was observed, leading to the index contrast of 0.07. Far-field optical diffraction measurements were also performed to yield angles of 13.9°, 12.8° and 10.6°. A narrower window resulted in a narrower optical waveguide width and exhibited a larger diffraction angle, suggesting that QWI defined the buried optical waveguide. In addition, an electroabsorption modulator was also made by buried waveguide. A −10 dB low optical insertion loss and a 15 dB high extinction ratio in a 500 μm long waveguide were obtained, indicating that a buried heterostructure could be used for photonic devices and integration applications.

Single-Mode Fabry-P&amp;#233;rot Quantum Cascade Lasers at λ~10.5 μm

In this paper, we report a single-mode Fabry-Pérot long wave infrared quantum cascade lasers based on the double phonon resonance active region design. For room temperature CW operation, the wafer with 35 stages was processed into buried heterostructure lasers. For a 4 mm long and 13 μm wide laser with high-reflectivity (HR) coating on the rear facet, continuous wave output power of 43 mW at 288 K and 5 mW at 303 K is obtained with threshold current densities of 2.17 and 2.7 kA/cm2. The lasing wavelength is around 10.5 μm. Single mode emission was observed for this particular device over the whole investigated current and temperature range.