Abstract
The introduction of selective area growth (SAG) in a mature semi‐insulating buried heterostructure (SIBH) platform for the realization of photonic integrated circuits on monolithic InP has been demonstrated. A thorough determination of the relations between quantum well thickness, transition energies, and mask geometries is performed on dedicated wafers by means of extensive micro‐X‐Ray diffraction and microphotoluminescence measurements. Based on those results, SAG is used to grow, with a single epitaxy step, AlGaInAs multiple quantum wells heterostructures, to tailor the active regions of Fabry–Pérot and distributed feedback (DFB) lasers emitting in the O‐Band. SIBH DFB lasers are realized, exhibiting threshold currents < 7.2 mA (at 25 °C), and emitting over 100‐nm spectral range in the O‐Band.
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