Bulk Radiation Research Articles

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

In this paper,bulk polarization mechanism and radiation simulation of the Al component gradient buffer layer (GBL) and constant buffer layer (CBL) of p-GaN HEMT (p-GaN GBL-HEMT and p-GaN CBL-HEMT) are analyzed and studied. It is found that the p-GaN GBL-HEMT can significantly reduce the buffer leakage current. The linear gradient amplitude (the range of linear gradients of Al components vertically in the buffer) of 20%–25% Al components can significantly increase the breakdown voltage (V BK) of the device, up to 1312 V. Simultaneously, although the p-GaN GBL-HEMT reduces the 2DEG concentration, the device still has a specific on-resistance (R ON,sp) and drain saturation current (I DS,sat) equivalent to the p-GaN CBL-HEMT due to the conductivity modulation effect. Its Baliga figure of merit is up to 2.27 GW cm−2. Finally, through the SEE simulation and the bulk polarization mechanism analysis, it is found that the drain transient current (I DS,trans) by the identical incident particles in the p-GaN GBL-HEMT is lower than that in the p-GaN CBL-HEMT, and the I DS,trans decreases with the increase of the Al components gradient amplitude. Therefore, the p-GaN GBL-HEMT provides a new idea for improving the electrical performance and SEE hardening.

Understanding and Weakening Photon Recycling in Solar Cells to Approach the Radiative Limit.

Photon recycling plays an important role in the light outcoupling of state-of-the-art solar cells and is considered a necessary condition to achieve the radiative limit of open-circuit voltage (VOC) and efficiency. However, due to the impact of photon recycling on bulk and surface radiation of solar cells being overlooked, experimental demonstrations on the accuracy of existing photon recycling models are scarce and some contrary theoretical results also emerge. Here, the relationship between photon recycling and radiation processes, as well as the corresponding VOC losses of solar cells based on the principle of detailed balance is clarified. It is shown that weakening photon recycling is more effective to boost the device performance than enhancing it, promoting the theoretical efficiencies of solar cells, such as perovskite, Si, and GaAs, to 98.5%, 94.9%, and almost 100% of their radiative limit, respectively. Moreover, weakening photon recycling also helps to maintain higher efficiency when the internal radiative efficiency decreases, which benefits higher device stability. This work provides an in-depth understanding of the role of photon recycling in solar cells and helps to push efficiency to a new limit.

Design of experiments to spectroscopically characterize radiation flow in stochastic media

Precise characterization of experimental radiation flow is required to validate the high energy density physics models, numerical methods, and codes that are used to simulate radiation-hydrodynamics phenomena such as thermal radiation transport in stochastic media. The Cassio code is used to simulate thermal radiation flow through inhomogeneous, stochastic-media-foam configurations containing optically thick clumps dispersed within an optically thin background aerogel. Cassio can model small inhomogeneous problems directly, but most problems require approximations to meet computer limitations on run-times and memory usage. Various examples of these approximations are methods that produce, in one calculation, an ensemble-averaged solution and associated standard deviation; reduced spatial dimensionality with approximate geometries; and full material homogenization with no geometric detail. Cassio simulations are used to design experiments at the OMEGA-60 Laser Facility that can measure the radiation flow using the spatially resolved COAX absorption spectroscopy diagnostic. The experimental platforms flow radiation through foam targets ranging from a background-only aerogel, to a single configuration of a specified stochastic medium, to a fully homogenized foam of the background and clump materials. Under constant total clump mass, larger clumps (here, larger than 10 μm diameter) will mix more slowly with the background such that the bulk radiation flow is faster than it would be in a fully homogenized material. The COAX platform can be used to infer temperature and density profiles in both the background material and clumps, simultaneously, and therefore to differentiate radiation flow in a range of stochastic and homogeneous media.

Abstract 5111: Rational synergistic radiosensitization strategies for group 3 medulloblastoma

Abstract Medulloblastoma (MB) is the most common malignant pediatric brain tumor. MB is comprised of 4 groups, termed Wnt, Shh, Group 3 and Group 4, each characterized by distinct molecular and clinical profiles. MYC-amplified Group 3 MB is associated imminent fatal metastatic relapse following standard treatment approaches, which currently include surgery, craniospinal irradiation and chemotherapy, highlighting an urgent need for identification of therapeutic vulnerabilities for these tumours. As such, using 4 novel patient-derived models of Group 3 MB that faithfully recapitulate the molecular and histological tumor characteristics, we characterised response to radiation of Group 3 MB in vitro to show that these tumors do not possess intrinsic radiation resistance. Furthermore, cumulative radiation experiments do not increase bulk radiation resistance in MB cells, highlighting the contribution of dynamic cell states to radiation response. In contrast, exposure to radiation leads to changes in cell clonogenic capacity as measured by limited dilution assays. Furthermore, RNA-seq data uncovered altered transcriptomic programs in response to cumulative radiation treatment. In particular, we observe differential regulation of genes encoding potassium ion channels and their regulators as well as genes encoding ECM and cell adhesion proteins. As part of our goal to evaluate the current multimodal treatment strategy of MB, we also show that a set of standard chemotherapeutic agents (etoposide, thiotepa and lomustine) currently used in the clinic do not produce a potent response at optimal doses in vitro, potentially accounting for abysmal survival outcomes seen in chemotherapy treated MB patients. As such, we conducted a screen of 144 FDA approved cancer drugs and identified therapeutics that selectively target Group 3 MB cells in contrast to normal tissue controls (foetal neural stem cells) in the low nanomolar dose range. In particular, topoisomerase inhibitor topotecan produces a potent response specific to MYC-amplified Group 3 MB, and sensitizes 2 patient-derived MB models to gamma irradiation. Altogether, our data characterizes Group 3 MB molecular and cellular responses to current treatment modalities and provides rationale for new clinical strategies to sensitize patients to radiation that will potentially allow to reduce the required radiation doses to treat these aggressive tumors, reduce the incidence of radiation treatment-related morbidity as well as improve cure rates. Citation Format: Julija Povilaikaite, Kaitlin Stitz, Nikhita Austin, Vijay Ramaswamy. Rational synergistic radiosensitization strategies for group 3 medulloblastoma [abstract]. In: Proceedings of the American Association for Cancer Research Annual Meeting 2024; Part 1 (Regular Abstracts); 2024 Apr 5-10; San Diego, CA. Philadelphia (PA): AACR; Cancer Res 2024;84(6_Suppl):Abstract nr 5111.

О генерации электрического разряда в диэлектрике потоком фотонов

The development of an electric discharge during photon scattering in a dielectric material is considered. A preliminary mathematical model of the discharge process is presented. The model is based on a quantum kinetic equation for quasi-free charge carriers produced by bulk radiation effects and impact ionization. Equations are obtained for the concentration, drift current density, and gas temperature of quasi-free electrons. A test example is considered, confirming that the model does not contradict the known conditions for the formation of an electric discharge.

Beyond islands: a free probabilistic approach

We give a free probabilistic proposal to compute the fine-grained radiation entropy for an arbitrary bulk radiation state, in the context of the Penington-Shenker-Stanford-Yang (PSSY) model where the gravitational path integral can be implemented with full control. We observe that the replica trick gravitational path integral is combinatorially matching the free multiplicative convolution between the spectra of the gravitational sector and the matter sector respectively. The convolution formula computes the radiation entropy accurately even in cases when the island formula fails to apply. It also helps to justify this gravitational replica trick as a soluble Hausdorff moment problem. We then work out how the free convolution formula can be evaluated using free harmonic analysis, which also gives a new free probabilistic treatment of resolving the separable sample covariance matrix spectrum.The free convolution formula suggests that the quantum information encoded in competing quantum extremal surfaces can be modelled as free random variables in a finite von Neumann algebra. Using the close tie between free probability and random matrix theory, we show that the PSSY model can be described as a random matrix model that is essentially a generalization of Page’s model. It is then manifest that the island formula is only applicable when the convolution factorizes in regimes characterized by the one-shot entropies. We further show that the convolution formula can be reorganized to a generalized entropy formula in terms of the relative entropy.

Development and test of innovative Low-Gain Avalanche Diodes for particle tracking in 4 dimensions

The MIUR PRIN 4DInSiDe collaboration aims at developing the next generation of 4D (i.e., position and time) silicon detectors based on Low-Gain Avalanche Diodes (LGAD) that guarantee to operate efficiently in the future high-energy physics experiments. To this purpose, different areas of research have been identified, involving the development, design, fabrication and test of radiation-hard devices. This research has been enabled thanks to ad-hoc advanced TCAD modelling of LGAD devices, accounting for both technological issues as well as physical aspects, e.g. different avalanche generation models and combined surface and bulk radiation damage effects modelling. In this contribution, it is reviewed the progress and the relevant detector developments obtained during the research activities in the framework of the 4DInSiDe project. • TCAD modelling for the design of radiation-hard LGAD sensors for 4D tracking. • Gain layer compensation, (p ＋ - and n ＋ -doping) to preserve the gain at high fluences. • New design approach to resistive read-out sensors: DC-coupled RSD. • DC-RSD employs a direct coupling of the resistive layer to the read-out pads. • DC-coupled low resistivity strips between read-out pads to improve the resolution.

Analysis of Bulk and Surface Radiation Damage in n+ in p SFz Si Micro Strip Detectors for the Future High Luminosity Collider Experiments: TCAD Simulation and Measurements

Within the framework of CERN RD50 collaboration, several radiation damage models for n/p-SFz, n-MCz Si have been explored for the better understanding of the experimental results in radiation damage analysis of the irradiated Si detectors. In the present paper, the important review on the microscopic radiation damage model for the p-type SFz Si detector combining the surface and radiation damage effects that can be used to simulate radiation damages effects in the heavily irradiated detectors for the good comparison of the experimental data and simulation result. The surface radiation damage models were extracted from the experimental measurements on the p-MOS capacitor and Gate-Controlled Diodes irradiated by Gamma or X-ray radiations in the range of 10 to 500 Mrad (Si). Whereas, the bulk damage model microscopic parameter was extracted from the experimental (TSC, DLTS) measurements on the n in p-SFz Si microstrip detector. The radiation damage (surface and bulk) models can be fed into the commercial Synopsys TCAD device simulator program for the designing and optimization of the detector, which can be used in the very harsh radiation environment of the HL-LHC, or FCC experiment. The objective of this analysis was to verify the experimental results using the new microscopic radiation damage models on the p-SFz Si for the radiation damage analysis of p- SFz Si detectors irradiated by proton, neutron or mixed at very high fluences. The results were verified by comparison of the experimental data with TCAD simulation.

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

The “Perugia Surface and Bulk” radiation damage model is a Synopsys Sentaurus Technology CAD (TCAD) numerical model which accounts for surface and bulk damage effects induced by radiation on silicon particle detectors. In this work, the significance of the input parameters of the model, such as electron/hole cross sections and acceptor/donor introduction rates is investigated, with respect to the changes in leakage current, full depletion voltage, charge collection efficiency and the current-related damage factor α (an irradiated device’s figure of merit) of a PIN diode. Different types (IV, 1/C2-V) of comparisons are made between simulation outputs and experimental data taken from irradiated PIN diodes. Finally, the possibility of the analytical model’s validation with the examination of the Low-Gain Avalanche Detector (LGAD) case, and its general application for future silicon sensors is discussed.

A Soft-Error Hardened by Design Microprocessor Implemented on Bulk 12-nm FinFET CMOS

We describe the porting of a soft-error (SE) hardened microprocessor to a modern 12-nm bulk CMOS finFET fabrication process and radiation testing results. The microprocessor includes latch-based cache and main register file (RF) arrays, with compact dual-patterned layouts. It is protected by dual modular redundancy (DMR) in the speculative pipeline, RF, and caches. Self-correcting triple modular redundant (TMR) flip-flops provide fine-grain protection in the TMR circuits that hold key architectural state. The DMR circuits are protected by checking circuits at the caches, RF, and crossovers to the TMR state. In the event of a DMR mismatch, an SE exception is taken, and the machine state is repaired via software. This approach also allows the detailed machine state reporting to elucidate the SE root cause circuits and cross sections. Broad beam radiation testing shows that it responds correctly to detected SEs. The by-circuit cross sections of the various circuits are reported for both heavy ions and protons.

Unveiling bulk and surface radiation forces in a dielectric liquid

Precise control over light-matter interactions is critical for many optical manipulation and material characterization methodologies, further playing a paramount role in a host of nanotechnology applications. Nonetheless, the fundamental aspects of interactions between electromagnetic fields and matter have yet to be established unequivocally in terms of an electromagnetic momentum density. Here, we use tightly focused pulsed laser beams to detect bulk and boundary optical forces in a dielectric fluid. From the optical convoluted signal, we decouple thermal and nonlinear optical effects from the radiation forces using a theoretical interpretation based on the Microscopic Ampère force density. It is shown, for the first time, that the time-dependent pressure distribution within the fluid chiefly originates from the electrostriction effects. Our results shed light on the contribution of optical forces to the surface displacements observed at the dielectric air-water interfaces, thus shedding light on the long-standing controversy surrounding the basic definition of electromagnetic momentum density in matter.

Interaction of a dielectric waveguide mode with a resonant scatterer: Scattering properties, propelling force, and torque

A system of a resonant scatterer described as a two-level atom coupled to a circular dielectric waveguide is studied. The system is characterized by the scattering properties of a guided mode (guided transmission and reflection, bulk radiation) and optomechanical properties (propelling force and torque on the scatterer). The results are based on a self-consistent solution of the scattering problem using the Green's functions and cover the cases of scatterers inside and outside waveguides. It is shown that while a scatterer with a fixed dipole orientation gives rise to scattering spectra described by Lorentzian line shapes, an isotropic scatterer can produce non-Lorentzian line shapes. The parameters defining the line shape are analyzed. The complicated line shapes are likely to arise in the coherent characterization of an emerging class of photonic devices based on photon emitters coupled to well-confined modes of dielectric waveguides. It is obtained that the propelling force and axial torque on the scatterer at resonance can be directly expressed in terms of the spontaneous emission coupling factor $(\ensuremath{\beta})$ of the system. The balances of the linear and angular momentum in the system are discussed. Numerical results are presented for strongly confined guided modes which allow efficient mode scattering and conversion of the linear and angular mode momentum to the force and torque, respectively.

Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Small-pitch, thin 3D Si sensors have been developed for the ATLAS and CMS experiment upgrades at the High Luminosity LHC. The pixel sizes are 50 × 50 µm2 with 1 readout column, and 25 × 100 µm2 with 1 or 2 readout columns (1E and 2E). Owing to the small inter-electrode distance, ranging from ∼28 µm to ∼51 µm in the considered layouts, these devices are expected to be extremely radiation hard. TCAD simulations by Synopsys Sentaurus, incorporating advanced radiation damage models, have been used for the design/optimization of these new 3D pixel sensors. In this study, we have compared the accuracy of different bulk damage models in predicting the signal efficiency of small-pitch 3D sensors irradiated at large fluences and its evolution with the bias voltage at different positions within the 3D cell. Selected simulation results will be reported in comparison to experimental data.

Analysis of particle size on mass dependent attenuation capability of bulk and nanoparticle PbO radiation shields

This study aims to evaluate the effect of particle size on the mass dependent attenuation ability of bulk and nanoparticles PbO. The mass attenuation coefficient, or MAC, of the samples was experimentally calculated using the HPGe detector at various selected energies (between 0.1218 MeV and 1.408 MeV). The experimental data were then compared to theoretical results obtained using the XCOM software to examine the validity of the experimental values. The two methods were found to strongly agree with each other. The half value layer (HVL) and tenth value layer (TVL) of the two samples were determined against increasing photon energies. The mass of the bulk PbO and PbO nanoparticles needed to attenuate half and 90% of the incoming radiation was evaluated. For both parameters, the results demonstrated that the mass needed to absorb the same amount of radiation was lower for the PbO nanoparticles, meaning that the PbO nanoparticles are more desirable in applications when mass is a concern, such as when fabricating a lead apron for instance.

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

In this work, the fabrication, electrical characterization and alpha spectral characterization of single-crystal (SC) diamond bulk radiation detector have been carried out. The performance metrics of the SC-diamond bulk detector such as the leakage current density, charge collection efficiency, spectral resolution and polarization effects are studied and are compared with a bulk detector fabricated using High-Pure Semi-Insulating (HPSI) 4H-SiC. It is found that the SC-diamond detector exhibits lower leakage current density, higher μτ product, better spectral resolution and no polarization effects in comparison to the HPSI 4H-SiC detector. The time response analysis of the SC-diamond detector is carried out to study the effect of alpha particles on the operation of the SC-diamond detector. Accordingly, the stability of the SC-diamond detector is tested by evaluating the total counts versus real time and the performance of the diamond detector is found to be stable during the alpha-time spectroscopy. Hence, diamond bulk detectors using commercially available electronic grade diamond may be better suited for alpha particle spectroscopy compared to HPSI 4H-SiC of nearly equivalent thickness.

Nonlinear effects in locally resonant nanostrip phononic metasurface at GHz frequencies

In this paper, we report on the observation of nonlinear effects in a nanostrip phononic metasurface (NPM) that enable the tuning of resonance frequencies at 1.42 GHz. The NPM resonator made of a periodic nanostrip array is fabricated on a lithium niobate substrate. Each of the nanostrips is 250 nm wide and is made of a 680-nm-thick SiO2 layer stacking on 50-nm Al metal electrodes. Finite element analysis reveals that the device operates in a vertically polarized (compression) mode with substantial acoustic energy confined in the nanostrips, leading to a local resonance at low acoustic velocity. Due to the nonlinearity, the resonance frequency of the device decreases with the increase in stimulation power. The underlying mechanism of the nonlinearity is found to be the power-dependent coupling of the adjacent nanostrips. This coupling induces softening of the substrate surface region, which reduces the acoustic velocity and, hence, the bulk radiation. As a result, the quality factor of the NPM resonator is found to improve with the increase in stimulation power. The power-dependent coupling of nanostrips in the NPM resonator demonstrates a reliable method for the realization of nonlinearity in phononic metasurfaces, which would significantly enrich the mechanisms for the manipulation of surface acoustic waves at high frequencies.

Multi-guard ring TCAD simulations for different n-on-p planar silicon particle detectors

This work presents a comparative study between three multi-guard ring structures that could be suitable for n-on-p silicon particle detectors for high luminosity applications. One multi-guard structure has p-type guard rings while the others have n-type guard rings with p-stop/p-spray isolation between n+ implants. The performance of the unirradiated structures are studied by increasing the fixed oxide charge density from 5 × 10+10 to 1 × 10+12 cm−2. It's found that for two structures there is a value of oxide charge density for which the breakdown voltage is maximum while for the third structure the breakdown voltage increases with oxide charge density. The performance of the irradiated structures are evaluated with simulations up to a radiation fluence of 1 × 10+16 1 MeV neutron equivalent/cm2/year (neq/cm2) using a three trap bulk radiation model for p-type silicon substrate. Structure with n-type guard rings and p-stop isolation exhibits low leakage current and good isolation between implants while structure with p-type guard rings shows higher breakdown voltage. The breakdown voltage is enhanced by adding floating metal field plates. TCAD simulation has been used to simulate current-voltage characteristics, electron and hole concentration profiles, and electric field and potential distributions.

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Applications at the High Luminosity LHC (HL-LHC) have required the development of a new generation of 3D pixel sensors with increased pixel granularity, extreme radiation hardness and low material budget. To this purpose, new 3D pixels have small pitch (e.g., 50×50 or 25×100 μm2) and reduced active thickness (∼100 μm). Owing to the small inter-electrode spacing (∼28 μm in the most aggressive designs). These 3D pixels are expected to be radiation hard even after irradiation at the hadron fluences. Indeed, they are of interest for the innermost tracking layers of ATLAS and CMS (∼2×1016 neq cm−2), and beyond. In order to estimate the charge collection efficiency (CCE) after irradiation, TCAD simulations can be conveniently used, providing useful information for the optimization of sensor design and fabrication technology. Within the AIDA-2020 project, with reference to the new single-sided 3D technology from FBK (Trento, Italy), we have simulated the CCE of pixel sensors with different inter-electrode spacing irradiated at different fluences. For these simulations, a 2D domain was used, consisting of a horizontal slice taken at half the depth of a 3D sensor. Simulations consider the hit of a minimum ionizing particle, described by the Heavy Ion model at different points within the active area. In addition, bulk radiation damage is accounted by using advanced deep-level trap models. This paper reports a comprehensive description of the simulation results based on a radiation model validated by comparison to experimental results from n-in-p strip detectors at 248 K and 900 V bias.

Комплексное исследование кластеров радиационных дефектов в GaAs-структурах после нейтронного воздействия

The results of experimental studies of the electrical parameters and surface morphology of GaAs structures of ring and circular Schottky diodes before and after irradiation with ~ 1 MeV neutrons are presented. Bulk radiation defects were revealed by atomic force microscopy (AFM). Based on the results of capacitance-voltage measurements, the concentration of electrons was determined and their mobility was estimated before and after irradiation. On the basis of the results obtained using a combination of these methods, a technique is proposed for determining the average sizes of the space charge regions of clusters of radiation defects.

Investigation of the impact of flux expansion on tungsten content and radiation in JET-ILW

Abstract The present paper shows the results of the investigation about the effects of the flux-expansion variation at the inner strike point location on the tungsten content in the plasma core, and on the bulk radiation in JET-ILW. The divertor geometries have been designed using the plasma equilibrium code CREATE-NL. The designed divertor geometries were experimentally achieved via a suitable optimization of the divertor coils current on a few discharges with similar additional heating. Diagnostics were used to examine: the tungsten source from the divertor tiles in both inter-ELM and intra-ELM phases, the tungsten content and profile shape inside the plasma core, and the total radiation. Preliminary results suggest that there is not a strong impact of the flux expansion on the tungsten erosion at the strike point. A discharge with high flux compression shows nonetheless a slight increase in core tungsten concentration but this might also be the result of changes in ELMs frequency due to flux expansion variation. The effect on ELMs dynamic has been clearly observed making more difficult the present analysis and should be further studied in future experiments. Edge analysis performed with the SOLEDGE2D code seems to exclude a significant variation of edge transport with flux expansion, pointing to an indirect effect on pumping efficiency and consequently on edge density.