TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

Abstract

The “Perugia Surface and Bulk” radiation damage model is a Synopsys Sentaurus Technology CAD (TCAD) numerical model which accounts for surface and bulk damage effects induced by radiation on silicon particle detectors. In this work, the significance of the input parameters of the model, such as electron/hole cross sections and acceptor/donor introduction rates is investigated, with respect to the changes in leakage current, full depletion voltage, charge collection efficiency and the current-related damage factor α (an irradiated device’s figure of merit) of a PIN diode. Different types (IV, 1/C2-V) of comparisons are made between simulation outputs and experimental data taken from irradiated PIN diodes. Finally, the possibility of the analytical model’s validation with the examination of the Low-Gain Avalanche Detector (LGAD) case, and its general application for future silicon sensors is discussed.