Abstract
The MIUR PRIN 4DInSiDe collaboration aims at developing the next generation of 4D (i.e., position and time) silicon detectors based on Low-Gain Avalanche Diodes (LGAD) that guarantee to operate efficiently in the future high-energy physics experiments. To this purpose, different areas of research have been identified, involving the development, design, fabrication and test of radiation-hard devices. This research has been enabled thanks to ad-hoc advanced TCAD modelling of LGAD devices, accounting for both technological issues as well as physical aspects, e.g. different avalanche generation models and combined surface and bulk radiation damage effects modelling. In this contribution, it is reviewed the progress and the relevant detector developments obtained during the research activities in the framework of the 4DInSiDe project. • TCAD modelling for the design of radiation-hard LGAD sensors for 4D tracking. • Gain layer compensation, (p ＋ - and n ＋ -doping) to preserve the gain at high fluences. • New design approach to resistive read-out sensors: DC-coupled RSD. • DC-RSD employs a direct coupling of the resistive layer to the read-out pads. • DC-coupled low resistivity strips between read-out pads to improve the resolution.
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