A pixel in an uncooled microbolometer terahertz (THz) focal plane array (FPA) has a suspended structure above read-out integrated circuit (ROIC) substrate. An optical cavity structure is formed between a thin metallic layer deposited on the suspended structure and a thick metallic layer deposited on the ROIC surface. The geometrical optical cavity length for our previous pixel structure, 3–4 μm, is extended three times, so that responsivity can be increased in the sub-THz region. This modification is carried out by depositing a thick SiN layer on the thick metallic layer. The modified pixel structure is applied to 640 × 480 and 320 × 240 THz-FPAs with 23.5 μm pixel pitch. Minimum detectable powers per pixel (MDP) are evaluated for these FPAs at 4.3, 2.5, 0.6, and 0.5 THz, and the MDP values are found to be improved by a factor of ten at 0.6 and 0.5 THz. The MDP values of the THz-FPAs developed in this work are compared with those of other THz detectors, such as uncooled antenna-coupled CMOS (complimentary metal-oxide semiconductor) THz-FPAs and cooled bolometer arrays. It is found that our THz-FPAs are more sensitive in the sub-THz region than the CMOS THz-FPAs, while they are much less sensitive than the cooled bolometer arrays. These THz-FPAs are incorporated into a 640 × 480 THz camera and 320 × 240 THz camera, and imaging equipment is developed. The equipment consists of a linearly polarized sub-THz source, a collimator lens, a beam homogenizer, two wire grids, a quarter-wave plate, and two THz cameras, and sub-THz images are demonstrated. It should be mentioned for the equipment that imaging of transmission and reflection is realized by moving only the quarter-wave plate, and the reflection image is taken along a direction normal to a sample surface so that the reflection image is hardly deformed.