Abstract
In this paper, we report a relatively facile microfabrication process of self-doping SiGe/Si multilayer quantum well (MQW) thermoelectrical arrays as well as their thermoelectrical properties. By the process, bolometer arrays (320×240) with pitch size 40 µm have been fabricated. The top view and side view SEM images show high yield (100%) of the arrays through the process. The Au interconnects are used to characterize thermal-electrical properties of individual bolometer. Their TCR (temperature coefficient of resistance) of the arrays is about -2.6%K-1 at 303K by thermal-electric characterization.
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