This work reports the existence of double polarization hysteresis (P–E) loop in Aurivillius-phase ferroelectric Bi4Ti3O12 (BiT) and reveals dramatic influence of small compositional variations on the electrical properties of it. The double polarization hysteresis is a characteristic of the interaction of defects with domain walls. This characteristic becomes more pronounced in Bi-deficient and Mg-doped BiT due to an increase in oxygen vacancy concentration at the lattices. Normal and saturated P–E loop is recalled by Nb donor doping, and associated composition Bi4Ti2.97Nb0.03O12.015 (BiT-0.03Nb) shows high remnant polarization (Pr = 12.5 μC/cm2) and large field-induced strain (S33 = 5.6 × 10−4). In addition, this doping results in bulk conductivity (σb) of BiT decreasing dramatically and associated activity energy (Ea) increasing significantly. In contrast, high oxide ion conductivity is induced with Mg2+ acceptor doping, and at 600 °C the optimum composition has ionic conductivity of ˜0.65 × 10−2 S cm−1 in the bulk.
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