Abstract
Bi4Ti3O12 (BIT), a typical Aurivillius ceramics with high Curie temperature (Tc ˜ 675 °C), has great potential for high temperature applications. This work provides an effective method of inducing structure distortion, relieving the tetragonal strain of the TiO6 octahedron and decreasing the concentration of oxygen vacancies to improve the piezoelectricity and temperature stability of BIT ceramics. Bi4Ti2.98W0.01Nb0.01O12 possesses an optimum piezoelectric coefficient (d33) of 32 pC/N, a high Tc of 655 °C and a large resistivity of 3 × 106 Ω·cm at 500 °C. The maximum d33 reported here is approximately quadruple than that of pure BIT (˜7 pC/N). Moreover, the d33 of W/Nb co-doped BIT and the in-situ temperature stability of the compression-mode sensor present a highly stable characteristic in the range of 25–600 °C. These results imply that W/Nb-modified BIT ceramics is a promising candidate for application at high temperatures of up to 600 °C.
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