Bi4Ti3O12(BIT) and Bi3.25La0.75Ti2.97V0.03O12(BLTV) thin films were fabricated on the Pt/TiO2/SiO2/p-Si(100) substrate using sol-gel method. The effect of La and V codoping on the structural and electrical properties of BIT thin films was investigated. BIT thin film exhibits predominantly c-axis orientation while BLTV thin film shows random orientation. Raman spectroscopy shows that TiO6 (or VO6) symmetry decreases and Ti—O (or V—O) hybridization increases with V substitution. The residual polarization of BLTV thin film is 25.4 μC/cm2, which is larger than that of BIT thin film (9.2 μC/cm2). BLTV thin film also shows excellent fatigue endurance and low leakage current characteristics, which implies the oxygen vacancies are suppressed by La and V codoping in the thin films.