Abstract
Ferroelectric Bi4Ti3O12 thin films are deposited on Pt/Ti/Si(100) (MFM structure) and SiO2/Pt/Ti/Si (100) (MFIS) substrates using RF magnetron sputtering at room temperature. The Bi4Ti3O12 thin films are then annealed by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere ranging from 500°C–700°C. X-ray diffraction examination reveals that the crystalline orientation of 700°C-annealed Bi4Ti3O12 thin films is better than that of 500°C-annealed ones. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of the Bi4Ti3O12 thin films are well developed
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