Abstract
Poly-crystalline Bi4−xNdxTi3O12 (BNdTx) thin films, with x = 0.4, 0.7, 0.9, 1.0 and 1.25, were prepared on Pt/TiO2/SiO2/Si substrates by a chemical-solution deposition method. Composition dependence of the remanent polarization, the dielectric constant and the leakage current characteristics was studied. The remanent polarization of the BNdTx films decreases with increasing Nd content x. The ferroelectric–paraelectric transition temperature shifts linearly to low temperatures with increasing x. BNdT0.90 shows the largest dielectric constant. The leakage current is suppressed by the Nd substitution. These composition dependent characteristics are discussed in terms of the structure changes due to Nd substitution. Films prepared by a single deposition show sharp BNdTx/Pt interfaces. However, amorphous interface layers appear with multiple depositions. This can be attributed to the enhanced inter-diffusion due to prolonged annealing at a high temperature.
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