Abstract
ABSTRACT The phase formation and electrical properties of (Bi,La)4Ti3O12 (BLT) thin film prepared by the chemical solution deposition method on Pt/TiO2/SiO2/Si substrates have been investigated. It was observed that the microstructure and electrical properties of BLT thin films dramatically varied with rapid thermal annealing (RTA) temperature. The crystallinity and grain size of BLT thin films were definitely increased with increasing RTA temperature of BLT films, which resulted in the enhancement of remanent polarization in BLT films. The remanent polarization (Pr) of BLT films annealed at 800°C by an RTA system was about 10 μ C/cm2. The leakage current densities of BLT films annealed above 750°C are 1∼ 3 × 10− 7A/cm2 at the applied field of 100 kV/cm. The polarization loss of BLT thin films after 1010 switch cycles is observed to slightly increase with increasing RTA temperature.
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