Bi2 Te3 Research Articles

Achieving High Thermoelectric Performance in Bi2(Te, Se)3 Thin Film with (00l)-Oriented by Incorporating Tellurization and Selenization Processes.

Flexible thermoelectric (TE) generators have received great attention as a sustainable and reliable option to convert heat from the human body and other ambient sources into electricity. This study provides a synthesis route that involves thermally induced diffusion to introduce Te and Se into Bi, fabricating an n-type Bi-Te-Se flexible thin film on a flexible substrate. This specific synthesis alters the crystal orientation (00l) of the thin film, improving in-plane electrical transportation and optimizing carrier concentration. Consequently, BixTeySe0.42 enhanced both the Seebeck coefficient and electrical conductivity, achieving a power factor of 17.1 μW cm-1 K-2 at room temperature. The TE device assembled with p-type Sb2Te3 exhibited exceptional flexibility with only a 26.2% change in resistance after 1000 times of bending at a radius of about 6 mm. The resistance change was further reduced to 7.5% after the application of a vinyl laurate coating. The fabricated TE device generated an ultrahigh output power of 792 nW with a temperature difference of 30 K.

Enhancing efficiency and stability of perovskite solar cells with Bi2Te3 interlayer: insights from SCAPS simulation

Perovskite solar cells (PSCs) have gained much interest due to their high power conversion efficiencies (PCE). Affordable, accessible, and efficient solar energy is crucial for a sustainable and clean future. In this article, we optimized PSC efficiency and performance with an interlayer (IL) of Bi2Te3 (BT). Cell performance and efficiency were improved by incorporating BT IL with varied thicknesses. BT IL promotes electron transport while protecting the underlying structure from chemical instability, improving device performance. This simple and low-cost technology for producing efficient and stable all-inorganic PSC holds considerable potential as a next-generation renewable energy source. The main focus is optimizing all-inorganic PSC using Solar Cell Simulator Capacitance software (SCAPS). We systematically explore the influence of BT thickness and defect densities on the device performance. The impact of charge carrier transport and overall photovoltaic performance is studied. Our findings reveal that introducing the BT IL leads to improved charge extraction, reduced recombination losses, and enhanced stability in the PSC. The optimized device configuration significantly enhances PCE compared to reference devices without BT IL. This study provides valuable insights into the potential use of BT ILs as a strategy to boost the efficiency and stability of PSCs.

Grain Manipulation by Annealing Treatment Realizes High-Performance N-Type Bi2Te2.4Se0.6 Thermoelectric Material and Device.

Bi2Te3-based materials play a crucial role in solid cooling and power generation, but the rapidly deteriorated ZT with rising temperatures above 450 K severely limits further applications. Here, this paper reports a novel preparation method of annealing treatment for molten ingot, which can enhance the thermoelectric performance of n-type Bi2Te2.4Se0.6 in a wide temperature range. Instead of conventional halides, copper is adopted to regulate the carrier concentration and grain size to optimal levels. During the process of annealing at 573 K for 4h, the number of twins significantly increases and the grains of Cu-doped samples become larger and more oriented. These optimizations lead to higher carrier mobility with similar carrier concentration compared with the sample without heat treatment. The synergistic effects of Cu doping and annealing treatment realize a high average ZT of 0.89 within 300-600 K in n-type Cu0.02Bi2Te2.4Se0.6. Combined with p-type (Bi,Sb)2Te3, the fabricated thermoelectric device exhibits a high conversion efficiency of 6.9% at a temperature difference of 300 K. This study suggests that annealing treatment is a simple and effective scheme to promote the applications of n-type Bi2(Te,Se)3 in a wide temperature range.

Ab initio calculations and crystal structure simulations for mixed layer compounds from the tetradymite series

Abstract Density functional theory (DFT) is used to obtain structural information of seven members of the tetradymite homologous series: Bi2Te3 (tellurobismuthite), BiTe (tsumoite), Bi4Te3 (pilsenite), Bi5Te3, Bi2Te, Bi7Te3 (hedleyite), and Bi8Te3. We use the formula S(Bi2kTe3)·L[Bi2(k+1)Te3] as a working model (k = 1–4) where S and L are short and long modules in the structures. The relaxed structures show an increase in the a parameter and decrease in the interlayer distance (dsub) from Bi2Te3 (2.029 Å) to Bi8Te3 (1.975 Å). DFT-derived formation energy for each phase indicates that they are all thermodynamically stable. Scanning transmission electron microscopy (STEM) simulations for each of the relaxed structures show an excellent match with atom models. Simulated electron diffractions and reflection modulation along c* are concordant with published data, where they exist, and with the theory underpinning mixed-layer compounds. Two modulation vectors, q = γ·csub* (γ = 1.800–1.640) and qF = γF·dsub* (γF = 0.200–0.091), describe the distribution of reflections and their intensity variation along dsub* = 1/dsub. The γF parameter reinforces the concept of Bi2kTe3 and Bi2(k+1)Te3 blocks in the double module structures, and γ relates to dsub variation. Our model describing the relationship between γ and dsub allows prediction of dsub beyond the compositional range considered in this study, showing that phases with k >5 have values dsub within the analytical range of interlayer distance in bismuth. This, in turn, allows us to constrain the tetradymite homologous series between γ values of 1.800 (Bi2Te3) and 1.588 (Bi14Te3). Phase compositions with higher Bi/Te should be considered as disordered alloys of bismuth. These results have implications for mineral systematics and classification as they underpin predictive models for all intermediate structures in the group and can be equally applied to other mixed-layer series. Our structural models will also assist in understanding variation in the thermoelectric and topological insulating properties of new compounds in the broader tetradymite group and can support experimental work targeting a refined phase diagram for the system Bi-Te.

Synergistic Tailoring of Electronic and Thermal Transports in Thermoelectric Se-Free n-Type (Bi,Sb)2Te3.

Se-free n-type (Bi,Sb)2Te3 thermoelectric materials, outperforming traditional n-type Bi2(Te,Se)3, emerge as a compelling candidate for practical applications of recovering low-grade waste heat. A 100% improvement in the maximum ZT of n-type Bi1.7Sb0.3Te3 is demonstrated by using melt-spinning and excess Te-assisted transient liquid phase sintering (LPS). Te-rich sintering promotes the formation of intrinsic defects (TeBi), elevating the carrier concentration and enhancing the electrical conductivity. Melt-spinning with excess Te fine-tunes the electronic band, resulting in a high power-factor of 0.35 × 10-3 W·m-1 K-2 at 300 K. Rapid volume change during sintering induces the formation of dislocation networks, significantly suppressing the lattice thermal conductivity (0.4 W·m-1 K-1). The developed n-type legs achieve a high maximum ZT of 1.0 at 450 K resulting in a 70% improvement in the output power of the thermoelectric device (7.7 W at a temperature difference of 250 K). This work highlights the synergy between melt-spinning and transient LPS, advancing the tailored control of both electronic and thermal properties in thermoelectric technology.

High performance magnesium-based plastic semiconductors for flexible thermoelectrics

Low-cost thermoelectric materials with simultaneous high performance and superior plasticity at room temperature are urgently demanded due to the lack of ever-lasting power supply for flexible electronics. However, the inherent brittleness in conventional thermoelectric semiconductors and the inferior thermoelectric performance in plastic organics/inorganics severely limit such applications. Here, we report low-cost inorganic polycrystalline Mg3Sb0.5Bi1.498Te0.002, which demonstrates a remarkable combination of large strain (~ 43%) and high figure of merit zT (~ 0.72) at room temperature, surpassing both brittle Bi2(Te,Se)3 (strain ≤ 5%) and plastic Ag2(Te,Se,S) and organics (zT ≤ 0.4). By revealing the inherent high plasticity in Mg3Sb2 and Mg3Bi2, capable of sustaining over 30% compressive strain in polycrystalline form, and the remarkable deformability of single-crystalline Mg3Bi2 under bending, cutting, and twisting, we optimize the Bi contents in Mg3Sb2-xBix (x = 0 to 1) to simultaneously boost its room-temperature thermoelectric performance and plasticity. The exceptional plasticity of Mg3Sb2-xBix is further revealed to be brought by the presence of a dense dislocation network and the persistent Mg-Sb/Bi bonds during slipping. Leveraging its high plasticity and strength, polycrystalline Mg3Sb2-xBix can be easily processed into micro-scale dimensions. As a result, we successfully fabricate both in-plane and out-of-plane flexible Mg3Sb2-xBix thermoelectric modules, demonstrating promising power density. The inherent remarkable plasticity and high thermoelectric performance of Mg3Sb2-xBix hold the potential for significant advancements in flexible electronics and also inspire further exploration of plastic inorganic semiconductors.

Atomic-Resolution Interfacial Reaction Mechanism between Bi2Te3-Based Alloys and Ni Electrodes.

Interdiffusion and solid-solid phase reaction at the interface between thermoelectric (TE) materials and the electrode critically influence interfacial transport properties and the overall energy conversion efficiency during service. Here, the microstructural evolution and diffusion mechanisms at the interfaces between the most widely used Bi2Te3-based TE materials, n-type Bi2Te2.7Se0.3 (BTS) and p-type Bi0.5Sb1.5Te3 (BST), and Ni electrodes were investigated at atomic resolution using spherical aberration-corrected scanning transmission electron microscopy (STEM). The BTS(0001)/Ni and BST(0001)/Ni interfaces were constructed by depositing Ni nanoparticles on mechanically exfoliated BTS and BST bulk materials and subsequent annealing. The interfacial reaction is initially dominated by Ni diffusion into the TE matrix to form NiAs-type NiM intermetallics, while Ni trans-quintuple-layer diffusion only occurs in Sb-rich BST. The Bi-rich BTS is more influenced by the Ni-Te preferential reaction, resulting in NiM abnormal grain growth and the formation of tilted and rotated interfaces. Bi diffusion into the BTS matrix forms a Bi double layer at the interface or Bi2[Bi2(Te,Se)3] as the annealing temperature increases, while Bi diffusion into the Ni thin film greatly accelerates the interfacial reaction rate, as elucidated by in situ heating STEM. The results provide essential structural details to understand and prevent the degradation of TE device performance.

Understanding the role of additional Cu intercalation in electronic and thermal properties of p-type Cu2.9Te2-incorporated Bi0.5Sb1.5Te3 thermoelectric alloys

While extensive research has explored Cu doping in n-type Bi2(Te,Se)3 for its beneficial effects on reproducibility and mobility, its impact on p-type (Bi,Sb)2Te3 remains incompletely understood. Recently, Saglik et al. demonstrated Cu2.9Te2 incorporation into Bi0.5Sb1.5Te3 as a novel approach for simultaneous Cu doping and intercalation, surpassing prior studies focused solely on Cu doping at Bi/Sb sites. The influence of additional Cu intercalation on both electronic band parameters (density-of-states effective mass, deformation potential, and weighted mobility) and phonon scattering by point defects has yet to be investigated. Here, we employ the Effective Mass model to comparatively assess the impact of Cu intercalation on these band parameters relative to single Cu doping. Furthermore, the Callaway-von Baeyer and Debye-Callaway models are employed to evaluate the effect of Cu intercalation in scattering phonons. Our findings reveal that additional Cu intercalation effectively suppresses the lattice thermal conductivity of Bi0.5Sb1.5Te3 to the amorphous limit, offering the potential to improve the figure-of-merit (zT) to ∼2.0 near 420 K with optimized carrier concentration. This approach highlights Cu intercalation as a readily applicable and powerful tool for maximizing the thermoelectric performance of Bi2Te3-based materials.

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material.

This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

Realizing high-efficiency thermoelectric module by suppressing donor-like effect and improving preferred orientation in n-type Bi2(Te, Se)3

Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300–425 K are obtained. The thermoelectric generator (TEG, 7-pair) and thermoelectric cooling (TEC, 127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared with the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.

Giant Deformation Induced Staggered-Layer Structure Promoting the Thermoelectric and Mechanical Performance in n-Type Bi2(Te, Se)3.

Bismuth telluride has long been recognized as the most promising near-room temperature thermoelectric material for commercial application; however, the thermoelectric performance for n-type Bi2(Te, Se)3-based alloys is far lagging behind that of its p-type counterpart. In this work, a giant hot deformation (GD) process is implemented in an optimized Bi2Te2.694Se0.3I0.006+3 wt%K2Bi8Se13 precursor and generates a unique staggered-layer structure. The staggered-layered structure, which is only observed in severely deformed crystals, exhibits a preferential scattering on heat-carrying phonons rather than charge-carrying electrons, thus resulting in an ultralow lattice thermal conductivity while retaining high-weight carrier mobility. Moreover, the staggered-layer structure is located adjacent to the van der Waals gap in Bi2(Te, Se)3 lattice and is able to strengthen the interaction between anion layers across the gap, leading to obviously improved compressive strength and Vickers hardness. Consequently, a high peak figure of merit ZT of ≈ 1.3 at 423 K, and an average ZT of ≈ 1.2 at 300-473 K can be achieved in GD sample. This study demonstrates that the GD process can successfully decouple the electrical and thermal transports with simultaneously enhanced mechanic performance.

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals.

Thermoelectrics has applications in power generation and refrigeration. Since only commercial Bi2Te3 has a low abundance Te, PbSe gets attention. This work enhances the near-room temperature performance of p-type PbSe through enhancing carrier mobility via lattice plainification. Composition controlled and Cu-doped p-type PbSe crystals are grown through physical vapor deposition. Results exhibit an enhanced carrier mobility ≈2578cm2V-1s-1 for Pb0.996Cu0.0004Se. Microstructure characterization and density functional theory calculations verify the introduced Cu atoms filled Pb vacancies, realizing lattice plainification and enhancing the carrier mobility. The Pb0.996Cu0.0004Se sample achieves a power factor ≈42µWcm-1K-2 and a ZT ≈ 0.7 at 300K. The average ZT of it reaches ≈0.9 (300-573K), resulting in a single-leg power generation efficiency of 7.1% at temperature difference of 270K, comparable to that of p-type commercial Bi2Te3. A 7-pairs device paired the p-type Pb0.996Cu0.0004Se with the n-type commercial Bi2Te3 shows a maximum cooling temperature difference ≈42K with the hot side at 300K, ≈65% of that of the commercial Bi2Te3 device. This work highlights the potential of p-type PbSe for power generation and refrigeration near room temperature and hope to inspire researchers on replacing commercial Bi2Te3.

Optimization of the Consolidation Parameters for Enhanced Thermoelectric Properties of Gr-Bi2Te2.55Se0.45 Nanocomposites

Hot pressing represents a promising consolidation technique for ball-milled bismuth telluride alloys, yet deep investigations are needed to understand its effect on the thermoelectric properties. This paper studies the effect of hot-pressing parameters (temperature and pressure) on the thermoelectric properties of the n-type Gr-Bi2Te2.55Se0.45 nanocomposite. Ultra-high pressure, up to 1.5 GPa, is considered for the first time for consolidating Bi2(Te,Se)3 alloys. Results from this study show that increasing the temperature leads to changes in chemical composition and causes noticeable grain growth. On the contrary, increasing pressure mainly causes improvements in densification. Overall, increments in these two parameters improve the ZT values, with the temperature parameter having a higher influence. The highest ZT of 0.69 at 160 °C was obtained for the sample hot-pressed at 350 °C and 1 GPa for 5 min, which is indeed an excellent and competitive value when compared with results reported for this n-type Bi2Te2.55Se0.45 composition.

Comprehensive study of nanostructured Bi2Te3 thermoelectric materials - insights from synchrotron radiation XRD, XAFS, and XRF techniques.

In this contribution, a comprehensive study of nanostructured Bi2Te3 (BT) thermoelectric material was performed using a combination of synchrotron radiation-based techniques such as XAFS, and XRF, along with some other laboratory techniques such as XRD, XPS, FESEM, and HRTEM. This study aims to track the change in morphological, compositional, average and local/electronic structures of Bi2Te3 of two different phases; nanostructure (thin film) and nanopowders (NPs). Bi2Te3 nanomaterial was fabricated as pellets using zone melting process in a one step process, while Bi2Te3 thin film was deposited on sodalime glass substrate using a vacuum thermal evaporation technique. Synchrotron radiation-based Bi LIII-edge fluorescence-mode X-ray absorption fine structure (XAFS) technique was performed to probe locally the electronic and fine structures of BT thin film around the Bi atom, while transmission-mode XAFS was used for BT NPs distributed in the PVP matrix. The structural features of the collected Bi LIII XANES spectra of thin film and powder samples of BT are compared with the simulated XANES spectrum of BT calculated using FDMNES code at 5 Å cluster size. Combining different off-line structural characterization techniques (XRD, FESEM, XPS, and HRTEM), along with those of synchrotron radiation-based techniques (XAFS and XRF) is necessary for complementary and supported average crystal, chemical, morphological and local electronic structural analyses for unveiling the variation between Bi2Te3 in the nanostructure/thin film and nanopowder morphology, and then connecting between the structural features and functions of BT in two different morphologies. After that, we measured the Seebeck coefficient and the power factor values for both the BT nanopowder and thin film.

Facile Fabrication of Flexible and High-Performing Thermoelectrics by Direct Laser Printing on Plastic Foil.

The emerging fields of wearables and the Internet of Things introduce the need for electronics and power sources with unconventional form factors: large area, customizable shape, and flexibility. Thermoelectric (TE) generators can power those systems by converting abundant waste heat into electricity, whereas the versatility of additive manufacturing suits heterogeneous form factors. Here, additive manufacturing of high-performing flexible TEs is proposed. Maskless and large-area patterning of Bi2Te3-based films is performed by laser powder bed fusion directly on plastic foil. Mechanical interlocking allows simultaneous patterning, sintering, and attachment of the films to the substrate without using organic binders that jeopardize the final performance. Material waste could be minimized by recycling the unexposed powder. The particular microstructure of the laser-printed material renders the-otherwise brittle-Bi2Te3 films highly flexible despite their high thickness. The films survive 500 extreme-bending cycles to a 0.76mm radius. Power factors above 1500 µW m-1K-2 and a record-low sheet resistance for flexible TEs of 0.4 Ω sq-1 are achieved, leading to unprecedented potential for power generation. This versatile fabrication route enables innovative implementations, such as cuttable arrays adapting to specific applications inself-powered sensing, and energy harvesting from unusual scenarios like human skin and curved hot surfaces.

Boosting Thermoelectric Performance of Bi2 Te3 Material by Microstructure Engineering.

Due to the intrinsic contradiction of electrical conductivity and Seebeck coefficient in thermoelectric materials, the enhancement for the power factor (PF) is limited. Since the PF decides the output power, strategies to the enhancement of PF are of paramount importance. In this work, Bi2 Te3 /Sb and Bi2 Te3 /W multilayer films are proposed to enhance the thermoelectric properties. Both systems possess extremely high conductivity of ≈5.6 × 105 Sm-1 . Moreover, the electrical conductivity and Seebeck coefficient simultaneously increase as temperature rising, showing the overcome of the intrinsic contradiction. This results in ultrahigh PFs of 1785 µWm-1 K-2 for Bi2 Te3 /W and of 1566 µWm-1 K-2 for Bi2 Te3 /Sb at 600 K. Thermal heating of the Bi2 Te3 /Sb multilayer system shows compositional changes with subsequent formation of Bi-Te-Sb phases, Sb-rich Bi-Te precipitates, and cavities. Contrary, the multilayer structure of the Bi2 Te3 /W films is maintained, while Bi2 Te3 grains of high-crystalline quality are confined between the W layers. In addition, bilayer defects in Bi2 Te3 and smaller cavities at the interface to W layers are also observed. Thus, compositional and confinement effects as well as structural defects result in the ultrahigh PF. Overall, this work demonstrates the strategies on how to obtain ultrahigh PFs of commercial Bi2 Te3 material by microstructure engineering using multilayer structures.

Enhanced Thermoelectric Performance of P-Type (Bi,Sb)2 Te3 by Incorporating Non-Stoichiometric Ag5 Te3 and Refining Te-Se Ratio.

Power generation modules utilizing thermoelectric (TE) materials are suitable for recycling widespread low-grade waste heat (<600K), highlighting the immediate necessity for advanced Bi2 Te3 -based alloys. Herein, the substantial enhancement in TE performance of the p-type Bi0.4 Sb1.6 Te3 (BST) sintered sample is realized by subtly incorporating the non-stoichiometric Ag5 Te3 and counteractive Se. Specifically, Ag atoms diffused into the BST lattice improve the density-of-states effective mass (md * ) and boost the hole concentration for the suppressed bipolar effect. The addition of Se further improves md * prompting the room-temperature power factor upgrade to 46Wcm-1 K-2 . Concurrently, the lattice thermal conductivity is considerably lowered by multiple scattering sources exemplified by Sb-rich nanoprecipitates and dense dislocations. These synergistic results yield a high peak ZT of 1.44 at 375K and an average ZT of 1.28 between 300 and 500K in the Bi0.4 Sb1.6 Te2.95 Se0.05 + 0.05wt.% Ag5 Te3 sample. More significantly, when coupled with n-type zone-melted Bi2 Te2.7 Se0.3 , the integrated 17-pair TE module achieves a competitive conversion efficiency of 6.1% and an output power density of 0.40Wcm-2 at a temperature difference of 200K, demonstrating great potential for practical applications.

A Layered Bi2 Te3 @PPy Cathode for Aqueous Zinc-Ion Batteries: Mechanism and Application in Printed Flexible Batteries.

Low-cost, safe, and environmental-friendly rechargeable aqueous zinc-ion batteries (ZIBs) are promising as next-generation energy storage devices for wearable electronics among other applications. However, sluggish ionic transport kinetics and the unstable electrode structure during ionic insertion/extraction hamper their deployment. Herein, a new cathode material based on a layered metal chalcogenide (LMC), bismuth telluride (Bi2 Te3 ), coated with polypyrrole (PPy) is proposed. Taking advantage of the PPy coating, the Bi2 Te3 @PPy composite presents strong ionic absorption affinity, high oxidation resistance, and high structural stability. The ZIBs based on Bi2 Te3 @PPy cathodes exhibit high capacities and ultra-long lifespans of over 5000 cycles. They also present outstanding stability even under bending. In addition, here the reaction mechanism is analyzed using in situ X-ray diffraction, X-ray photoelectron spectroscopy, and computational tools and it is demonstrated that, in the aqueous system, Zn2+ is not inserted into the cathode as previously assumed. In contrast, proton charge storage dominates the process. Overall, this work not only shows the great potential of LMCs as ZIB cathode materials and the advantages of PPy coating, but also clarifies the charge/discharge mechanism in rechargeable ZIBs based on LMCs.

Bi2Te3-intercalated MnBi2Te4: ideal candidate to explore intrinsic Chern insulator and high-temperature quantum anomalous Hall effect

The recently discovered magnetic topological insulator of MnBi2Te4 (MBT), has been demonstrated to realize the quantum anomalous Hall (QAH) effect, while the naturally antiferromagnetic (AFM) interlayer coupling in MBT results in that the QAH effect can only be realized in odd-layered systems and at low temperature. Using first-principles calculations, we find that intercalating Bi2Te3 (BT) layers into MBT by forming MBT/(BT) n /MBT (n = 1–6) heterostructures can induce magnetic phase transition from AFM to ferromagnetic (FM) interlayer coupling when n⩾ 3. Specifically, MBT/(BT)3/MBT and MBT/(BT)4/MBT respectively host Curie temperatures T c of 14 K and 11 K, which fits well the experimentally measured T c of 12 K. Detailed band structure calculations and topological identification show that the QAH phases are well preserved for all FM heterostructures. And the topological mechanism of MBT/(BT) n /MBT as a function of n is revealed by employing continuum model analysis. Most importantly, the FM MBT/(BT)4/MBT has already been experimentally fabricated. Thus, our work provides a practical guideline to explore high-temperature QAH effect in MBT family of materials.

Porous, Ultrathin PtAgBiTe Nanosheets for Direct Hydrazine Hydrate Fuel Cell Devices.

Ultrathin 2Dnanomaterials have attracted extensive attention due to their fascinating applications in sustainable and clean-energy-related devices, but obtaining ultrathin 2D multimetallic polycrystalline structures with large lateral dimensions remains a challenge. In this study, ultrathin 2D porous PtAgBiTe and PtBiTe polycrystalline nanosheets (PNSs) are obtained via a visible-light-photoinduced Bi2 Te3 -nanosheet-mediated route. The PtAgBiTe PNSs are assembled by sub-5nm grains with widths beyond 700nm. Strain and ligand effects originating from the porous, curly polycrystalline structure endow the PtAgBiTe PNSs with robust hydrazine hydrate oxidation reaction activity. Theoretical research demonstrates that the modified Pt activates the N-H bonds in N2 H4 during the reaction, and strong hybridization between Pt-5d and N-2p facilitates dehydrogenation while reducing energy consumption. The peak power densities of the PtAgBiTe PNSs in actual hydrazine-O2 /air fuel cell devices are boosted to 532.9/315.9mW cm-2 , while those of the commercial Pt/C are 394.7/157.9mW cm-2 . This work provides a strategy not only for preparing ultrathin multimetallic PNSs but also for finding promising electrocatalysts for actual hydrazine fuel cells.