Mid-infrared (mid-IR) spectroscopy can be used to identify chemical and biological substances. Indeed, most molecules absorb light at specific wavelengths in the mid-infrared (mid-IR). Mid-IR photonic circuits on silicon chips have recently gained a lot of attention. Indeed, they can provide high-performance with a low power consumption, while being cheap, compact, and light. Germanium (Ge) and silicon-germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge extending up to 15 µm. It has been demonstrated for a few years now that a Ge-rich graded SiGe platform relying on a graded SiGe layer epitaxially grown on a Si substrate can be used as a photonics platform for mid-IR operation in a wide spectral range.In this invited talk, recent developments concerning graded SiGe photonic integrated circuits will be presented. First, passive devices will be reviewed. It will be shown that graded-SiGe waveguides can be used in an unprecedented spectral range, e.g. up to 11 µm. Mach Zehnder interferometers, resonators and integrated Fourier transform spectrometers will be discussed. Then, a large bandwidth light source based on non-linear optical effects in SiGe waveguides [1] will be presented, together with results on integrated mid-IR optoelectronic modulators [2, 3]. Tunable electro-optical frequency-comb generation around 8 µm wavelength based on such integrated modulators will also be discussed [4]. Finally, the recent scale-up of this platform will be shown, with the first demonstration of low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer [5].Acknowledgment:This work was co-funded by ANR Light-up Project (ANR-19-CE24-0002-01) and by European Union (ERC, Electrophot,101097569). This work was partly supported by the French RENATECH network.
Read full abstract