In this work, a novel differential active voltage attenuator that is capable of operating under low supply voltage and power consumption is presented. The proposed attenuator is based on bulk-driven MOS devices. Thanks to the use of the fully balanced differential structure, the attenuator demonstrates improved common-mode rejection capability. The attenuator has been fabricated using 180-nm TSMC CMOS technology with 0.5 V power supply and 0.366 µW power consumption. The experimental results give a voltage attenuation around − 6 dB, rail-to-rail input common-mode range and common-mode rejection ratio around 27.8 dB. As an application example, a fully balanced differential amplifier is designed and simulated. The simulated and measurement results agree with the theory and confirm the robustness of the design.