Back Surface Field Research Articles

Simulation and numerical modeling of high‐efficiency CZTS solar cells with a BSF layer

AbstractThe present paper deals with the photovoltaic performance‐based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces the recombination of the carriers at the back surface, thus increasing the overall current output of the solar cells. SCAPS 1D simulator is used to study the impact of several parameters on electrical properties like temperature, the thickness of the CZTS layer, acceptor doping concentration, and the impact of series and shunt resistances. Considering the optimized parameters in each layer of the solar cells, this work delivers 24.7% efficiency with the BSF layer, which is 8% more than that without the BSF layer. The results of this modeling will facilitate researchers to fabricate a highly efficient CZTS solar cell.

Synergetic Regulation of Interface Defects and Carriers Dynamics for High-Performance Lead-Free Perovskite Solar Cells.

Severe nonradiative recombination and open-circuit voltage loss triggered by high-density interface defects greatly restrict the continuous improvement of Sn-based perovskite solar cells (Sn-PVSCs). Herein, a novel amphoteric semiconductor, O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT), is developed to manage interface defects and carrier dynamics of Sn-PVSCs. The amphiphilic ionic modulators containing multiple Lewis-base functional groups can synergistically passivate anionic and cationic defects while coordinating with uncoordinated Sn2+ to compensate for surface charge and alleviate the Sn2+ oxidation. Especially, the sulfonate anions raise the energy barrier of surface oxidation, relieve lattice distortion, and inhibit nonradiative recombination by passivating Sn-related and I-related deep-level defects. Furthermore, the strong coupling between PHAAT and Sn perovskite induces the transition of the surface electronic state from p-type to n-type, thus creating an extra back-surface field to accelerate electron extraction. Consequently, the PHAAT-treated device exhibits a champion efficiency of 13.94% with negligible hysteresis. The device without any encapsulation maintains 94.7% of its initial PCE after 2000h of storage and 91.6% of its initial PCE after 1000h of continuous illumination. This work provides a reliable strategy to passivate interface defects and construct p-n homojunction to realize efficient and stable Sn-based perovskite photovoltaic devices.

Back-surface electric field passivation of CdTe solar cells using sputter-deposited CdSe

CdTe back-surface passivation is one of the effective ways to enhance device performance. In recent years, the role of Se passivation in high performance CdSeTe thin film solar cell device has received increasing attention. However, current high-efficiency devices only have a considerable concentration of Se at the very front of the device, while most of the area on the back side of the absorber layer is not passivated by Se. This means that further efficiency improvements may be possible if more defects on the back surface of the absorber layer are passivated by Se, while maintaining the built-in field. Here, based on the magnetron sputtering process, chemical passivation and electric field passivation can be achieved when a small amount of CdSe is deposited on the CdTe back surface. When the CdSe thickness is ∼20 nm (Before annealing), the optimal cell current was increased from 23.8 mA/cm2 to 26 mA/cm2 and the efficiency was increased from 13.1% to 15.5%. External quantum efficiency and impedance spectroscopy measurements indicate that the performance improvement is due to the reduction of the interfacial recombination current on the back surface.

Theoretical exploration of high VOC in Cu2SnS3 thin film solar cells towards high efficiency

This article manifests the outstanding performance of copper-tin-sulphide (Cu2SnS3)-based double-heterojunction (DH) photovoltaic cell. The n-type ZnSe as window and the p+-type CGS (CuGaSe2) as back surface field (BSF) layer have been used for the p-type Cu2SnS3 base layer. The SCAPS-1D simulator is used for the simulation of this photovoltaic cell and demonstrating the effects of each layer. The n-ZnSe/p-Cu2SnS3 heterojunction has displayed a power conversion efficiency (PCE) of 17.69 % with JSC = 32.39 mA/cm2, VOC = 0.60 V, and FF = 80.58 %, when functioning alone. An enrichment of PCE to 38.14 % has been observed, owing to the addition of CGS as aBSF layer in the proposed structure. The VOC also develops enormously to 1.22 V in dual-heterojunctions, which boosts the PCE. The effective band alignment between ZnSe/Cu2SnS3 and Cu2SnS3/CuGaSe2 interfaces produces greater built-in potential that is liable to generate high VOC. The built-in potential of the device is 1.54 V according to the C-V study. These outcomes imply that the n-ZnSe/p-Cu2SnS3/p+-CGS device would be a viable alternative for harvesting solar energy in the era of thin film solar cells.

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS2 thin film solar cell

This paper presents the modeling and numerical inspection of an efficient CuInS2-based n-CdS/p-CuInS2/p+-ZnTe thin film solar cell applying the SCAPS-1D simulator. The various parameters used in the simulation have been obtained from existing literature. The optimization of the device has considered the width, doping concentration, and defect density of individual layer. The optimized standalone CuInS2 device shows an efficiency of 16.83%. Addition of ZnTe in the device gives an impressive efficiency of approximately 28.67%, having a current density, JSC of 25.58 mA cm−2, a VOC of 1.25 V, and an FF of 89.12%. The superior VOC is a result of the increased built-in potential formed at the hetero-interfaces of the device and the decrease in surface recombination velocity by back surface field effect in the ZnTe layer. The highest JSC is ascribed to the enhancement of the absorption of vis-infrared photons by back surface field (BSF) effect in the ZnTe layer. These findings demonstrate the potential for manufacturing high efficiency CuInS2-based thin film solar cells in the future.

Rational selection of light sources for LED-based solar simulators

Solar simulators replicate the spectrum of sunlight and are essential for the research, development, and quality control of photovoltaic devices. The purpose of this paper is to explore the optimization of solar simulators based on light-emitting diodes (LEDs) and hybrid LED-halogen lamp combinations in a series of simulations, by taking into account newly defined criteria of the IEC 60904-9:2020 standard: new spectral ranges, requirements for the so-called A+ class spectrum, spectral coverage, spectral deviation, and spectral mismatch factors. We reveal new ways to configure LED-based solar simulators with just four light source types to achieve A+ class spectrum. Even with A+ class spectrum significant spectral mismatch effects can remain, but may be reduced by adding or adjusting light sources. We demonstrate optimum combinations of light sources necessary for the reduction of spectral mismatch effects in the cases of crystalline silicon (c-Si) cells or both amorphous silicon (a-Si) and c-Si cells. Simulations of the current–voltage characteristics of an encapsulated aluminum back-surface field (Al-BSF) Si solar cell were performed using Synopsys TCAD (Technology Computer-Aided Design) software to reveal the expected differences of the open-circuit voltages and the short-circuit currents in a real-life operation scenario. The advantages of higher spectral coverage and more precise photogenerated current values are envisaged for hybrid solar simulators with comparable numbers of different light source types. The manufacturability of several proposed simulator designs is demonstrated by a series of proof-of-concept experiments.

Impact on generation and recombination rate in Cu2ZnSnS4 (CZTS) solar cell for Ag2S and In2Se3 buffer layers with CuSbS2 back surface field layer

AbstractFor photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures.

Performance evaluation of ZnSnN2 solar cells with Si back surface field using SCAPS-1D: A theoretical study

The earth-abundant semiconductor zinc tin nitride (ZnSnN2) has garnered significant attention as a prospective material in photovoltaic and lighting applications, primarily due to its tunable narrow bandgap and high absorption coefficient. This study focuses on a numerical investigation of ZnSnN2 solar cell structures using the SCAPS 1-D software. The objective is to analyze the influence of various physical and geometrical parameters on solar cell performance. These parameters include the thicknesses of the ZnO window layer, CdS buffer layer, ZnSnN2 absorber layer, and Si back surface field layer (BSF), as well as operating temperature, series and shunt resistances (RS and Rsh), absorber layer defect density, interface defects, and the generation-recombination profile of the n-ZnO:Al/n-CdS/p-ZnSnN2/p-Si/Mo structure. We have evaluated the capabilities of this novel material absorber by investigating its performance across a range of thicknesses. We have started with ultrathin absorber thicknesses and gradually increased them to thicker levels to determine the optimal thickness for achieving high efficiency. Under optimal conditions, a thin solar cell with a thickness (wp) of 1 μm achieved an efficiency (η) of 23.9%. In a practical solar cell operating at room temperature, optimal parameters were observed with a thicker absorber layer (wp = 8 μm) and a BSF width of 0.3 μm. The cell exhibited resistances of Rsh = 106 Ω cm2 and Rs = 1 Ω cm2, along with a low defect density (Nt = 1010 cm−3) in the ZnSnN2 semiconductor. These factors combined to yield an impressive efficiency of 29.5%. Numerous studies on emerging ternary nitride semiconductors (Zn-IV-N2) have highlighted ZnSnN2 as a promising material for thin-film photovoltaics. This compound is appealing due to its abundance, non-toxicity, and cost-effectiveness. Unlike conventional solar cells that depend on rare, toxic, and costly elements, these components are still essential for today's solar cell technology.

Effect of Adding Cu2O as a Back Surface Field Layer on the Performance of Copper Manganese Tin Sulfide Solar Cells

One of the major limitations causing deadlock in solar cells with higher sulfur content in the photovoltaic absorber material is the unintended formation of an uncontrollable MoS2 layer between the absorber material and Mo back contact, which can affect negatively the efficiency of solar cells. Researchers reported that it is very difficult to control the MoS2 properties such as the conductivity type, thickness, band gap, and carrier concentration in experiments. Considering these challenges, an initial step involved a thorough examination utilizing the one-dimensional solar cell capacitance simulator (SCAPS-1D) to assess the impact of n-MoS2 interlayer thickness and donor concentration on the performance of CMTS solar cells. Our investigation revealed the formation of a “cliff-like CBO” at the CMTS/n-MoS2 interface, facilitating the transport of electrons from the p-CMTS absorber to the Mo back contact, resulting in a significantly higher recombination rate. Subsequently, herein a novel approach is proposed, using Cu2O as a back surface field (BSF) layer due to its low cost, intrinsic p-type properties, and non-toxic nature. Simulation results of a novel heterostructure (Mo/Cu2O/CMTS/CdS/i-ZnO/AZO/Al) of the CMTS-based solar cell are discussed in terms of recombination rate and conduction band alignment at the absorber/BSF interface. A desired “spike-like CBO” is formed between CMTS/Cu2O, which hinders the transport of electrons to the back contact. By optimizing the physical parameters such as thickness and the doping density of the Cu2O layer, an efficiency η of 21.78% is achieved, with an open circuit voltage (Voc) of 1.26 V, short-circuit current density (Jsc) of 24.45 mA/cm², and fill factor (FF) of 70.85%. Our simulation results offer a promising research direction to further develop highly efficient and low-cost CMTS solar cells.

Theoretical Analysis and Development of Multilayered Ecofriendly Sb2S3‐Based Solar Cell Using SCAPS‐1D Framework

Herein, FTO/TiO2/Sb2S3/Au solar cell characteristics via SCAPS‐1D modeling are examined. The research begins with device modeling of the Sb2S3 conventional solar cell based on experimental data, which results in excellent agreement with the power conversion efficiency recorded in the literature of ≈4.72%. The influence of several factors on the characteristics of conventional solar cells is then investigated, including Sb2S3 thickness, carrier concentration, bulk and interface defects, and buffer layer type (TiO2, WS2, and CdS). An optimal efficiency of 9.97%, open‐circuit voltage (Voc) of 0.96 V, short‐circuit current (Jsc) of 19.69%, and fill factor (FF) of 52.26% are found for the FTO/WS2/Sb2S3/Au optimized solar cell. Finally, the influence of NiO as the back surface field and parasitic resistance (Rs and Rsh) on the performance of Sb2S3 solar cells is investigated. The innovative solar cell design (FTO/WS2/Sb2S3/NiO/Au) with NiO thickness of 20 nm, Rs < 2 Ω cm−2, and Rsh > 700 Ω cm−2 yields a high efficiency of more than 14.38%, FF > 68.93%, Voc > 1 V, and Jsc > 20.67 mA cm−2. These qualities allow for the large‐scale manufacture of a solar cell by including it in a manufacturing workflow.

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

We report, a novel multi-step design simulation results on SnS absorber based solar cell architecture with is 4.5 times efficiency enhancement vis-à-vis reported experimental results. It is ascribed to an efficient control over inherent loss mechanism via device design novelty. The multi-step design modification in the device architecture comprised; (a) absorber bandgap widening at the interface, (b) considering donor interfacial defects at the SnS/buffer junction, (c) limiting the presence of the majority carrier at the interface via asymmetric doping at the SnS/buffer interfaces, and (d) employing back surface field at the absorber/back metal contact interface. This design approach resulted in achieving an optimal design configuration that exhibited significant improvements in open circuit voltage (119%), short circuit current (61%), fill factor (25.8%), and efficiency (347.6%) compared to the experimental benchmark. An overall effect of improved parameters, in the modified architecture of the SnS absorber based solar cell, led to substantial enhancement in efficiency close to ∼19% vis-à-vis 4.23% reported in literature.

Absorption enhancement in GaAs based quantum dot solar cells using double-sided nanopyramid arrays.

Quantum dot solar cells (QDSCs) are regarded as one of the most efficient devices due to their intermediate band structures. A suitable light-trapping (LT) strategy matching the absorption spectrum is important to improve the photocurrent conversion efficiency of QDSCs. In this paper, we have proposed a design of the periodically patterned top and bottom dielectric nanopyramid arrays for highly efficient light trapping in GaAs-based QDSCs. The dielectric nanopyramid arrays significantly improve the light absorption of QDSCs in the longer wavelength between 0.8µm and 1.2µm. In addition, this LT structure ensures a completely flat window layer and back surface field layer while passivating these semiconductor surfaces. For the optimized double-sided structure, the short-circuit current generated by QDSC is 34.32m A/c m 2, where the photocurrent from the quantum dots (QDs) is 5.17m A/c m 2. Compared to the photocurrent of the QDSC without an LT structure, the photocurrent of the double-sided structure is increased by 84%. The QD photocurrent of the double-sided structure is increased by 570% compared to that of the QDSC without the LT structure.

Kesterite CZTS based thin film solar cell: Generation, recombination, and performance analysis

The thin film Copper Zinc Tin Sulphide (CZTS) solar cells (SC) are third-generation SC that has potential use in solar photovoltaics nowadays. The present work aims to raise the output parameter of CZTS-based SC through the generation and recombination process using Solar Cell Capacitance Simulator in one dimension (SCAPS-1D). The proposed configuration of cell ZnO/ZnS/CZTS/SnS has been evaluated by considering SnS as the back surface field (BSF). It is observed that SnS is a suitable material to be used as a BSF. In the present work, the role of variations of the different parameters such as layer thicknesses, defect densities, recombination and generation of charge carriers, and the back contact work function effect on the PV parameter have been studied. Optimized parameters from the studied cell such as power conversion efficiency (PCE) of 18.18%, current density (Jsc) as 27.7899 mA/cm2, open circuit voltage (Voc) of 0.7875 V, and fill factor (FF) of 83.07% have been recorded. This result will pave the researchers working in this field to fabricate earth-abundant, low-cost, highly efficient, and toxic-free CZTS SCs.

Numerical study of MoSe2-based dual-heterojunction with In2Te3 BSF layer toward high-efficiency photovoltaics

In this study, molybdenum diselenide (MoSe2)-based dual-heterojunction with Indium Telluride (In2Te3) as an absorber and a back surface field (BSF) layers with Al/ITO/CdS/MoSe2/In2Te3/Ni heterostructure has been studied by SCAPS-1D simulator. To explore the potentiality of layered materials in photovoltaic devices, a detailed investigation has been executed on the CdS window, MoSe2 absorber, and In2Te3 BSF layers at varied layer thicknesses, carrier concentrations, interface and defect densities, resistances, and operating temperatures. The photoconversion efficiency (PCE) of 24.78% with short circuit current J sc of 30.55 mA cm−2, open circuit voltage V oc of 0.95 V, and fill factor FF of 85.5% were obtained in the reference cell (without the In2Te3 BSF layer), while a notably improved PCE of 29.94% (5.16% higher) with J sc of 31.06 mA cm−2, V oc of 1.10 V, and FF of 87.28% was achieved by inserting the In2Te3 BSF layer. With a favorable band alignment and almost similar chemical and physical properties as transitional metal dichalcogenides (TMDCs) materials, the proposed dual heterostructure with CdS, MoSe2, and In2Te3 exhibits huge potential as a photoactive material and paves a pathway for the fabrication of uniquely layered material-based thin, flexible high-efficiency solar cells.

Development of passivating edge shingle modules with right cut, new loss evaluation and liquid-based edge passivation strategy

Shingle interconnected cells and high-performance silicon solar cells are the main technologies applied for the development of next-generation Photovoltaic (PV). Nonetheless, the assembly process of high-efficiency shingle configuration modules faces several problems. Such challenges encompass the processes of complete silicon cell separation, the proper assessment of the losses during cell separation, and the post-passivation treatment of newly formed edges in the shingle module. We conducted this study to address the aforementioned issues. I) Our findings revealed that the cutting during high-efficiency cell separation should be performed on the back surface field (BSF) side; II) Furthermore, we quantified the slice cutting loss by introducing a rational definition of the cell separation factor K and utilizing the Suns-VOC method; III) Additionally, we developed efficient shingle mini-modules and passivated the sub-cell edge of the modules. These measures resulted in a considerable increase in the output power of the PV module while effectively reducing cell-to-module (CTM) losses. Based on the concept of the “Liquid-based Edge Passivation Strategy (LEPS)”- developed in this work, using a four-sub-cell configuration shingle mini-module, we finally achieved the following increased parameter efficiency: +0.32% of abs, +15.1 mV of open circuit voltage, +0.76% of fill factor, and +7.8 mW of power gain. The results obtained in this research culminated in advancing the methods employed in assembling next-generation high-efficiency PV modules and striking maximum power output PV modules. Moreover, our present findings serve as a technical reference and open up new avenues for the potential photovoltaic industry transformation and upgrading.

Influence of the structural differences between end-of-life Al-BSF and PERC modules on the Al leaching separation behavior

The booming global photovoltaic industry is bringing a large number of end-of-life photovoltaic (PV) modules. Achieving effective and green recovery of end-of-life PV modules is crucial to perform the energy and environmental sustainable development. The passivated emitter and rear cell（PERC) modules are the mainstream products in the current solar cell market, while the aluminum back surface field cell（BSF)modules were the mainstream products in the previous solar market. These two types of modules currently occupy the main share of the recycling market. There are several studies on the separation and recovery of valuable metals in the end-of-life PV modules. However, the influence of different cell processes and structures on the separation behavior of mainstream impurities in cells remains unclear. In this paper, the impacts of the structure of PERC and Al-BSF cells on the separation behavior of dominant Al impurity were studied. The structure and component difference between the PERC cells and Al-BSF cells was first clarified. The relationship between the loss rate of silicon wafer and the leaching rate of the aluminum back impurity was then studied. The results showed that the local contacts between the Al layer and Si wafers were primarily formed in PERC cells, in which the higher temperatures and longer leaching times were required to achieve the same Al leaching efficiency of Al-BSF cells. As for the Al-BSF modules, in order to better balance the Al separation and silicon loss rate during the alkaline leaching process, the reaction time should be set in the range of 7–10 min. The leaching rate of aluminum can reach 97.5% at 25 °C and 1 M NaOH for 10 min. After leaching, a layer of residual Si-O-Al alloy phase which is attached to the back surface of the two kinds of cell was observed. This study has a guiding significance for the green and efficient recovery of the silicon wafer in photovoltaic (PV) modules.

Stable passivation of cut edges in encapsulated n-type silicon solar cells using Nafion polymer

In this study, the edge passivation effectiveness and long-term stability of Nafion polymer in n-type interdigitated back contact (IBC) solar cells are investigated. For new module technologies such as half-cut, triple-cut, or shingled modules, cutting of the cells introduces unpassivated edges with a high recombination rate and this limits the module power. These cut edges can be “repassivated” after cutting and in this work Nafion polymer is used to achieve this. First, different edge types, namely emitter edges (n+/n/p+) and back surface field (BSF) edges (n+/n/n+), as well as different cutting techniques such as laser cut and cleave (L&C), thermal laser separation (TLS), and mechanical cleaving are evaluated. It is found that TLS and mechanical cleaving enable good repassivation on both BSF and emitter edges. Second, industrial-size IBC solar cells are made to assess the effect of the edge repassivation on performance. On 1/4-cut M2 size IBC cells with two emitter edges, efficiency is improved by over 0.3%abs. However, an efficiency improvement was not observed for similar cells with BSF edges, due to an insufficient passivation at the bulk edges. Last, the real-world stability of the Nafion repassivation is evaluated in industrially relevant module stacks by laminating the repassivated wafers with ethylvinylacetate (EVA) or polyolefin elastomer (POE) encapsulants and then exposing them to industry standard testing of 1000 h under damp heat conditions (85 °C, 85% relative humidity). The tests reveal that the repassivation is stable in EVA encapsulants but not in POE.

Numerical studies on a ternary AgInTe2 chalcopyrite thin film solar cell

This paper theoretically outlines a new n-AlSb/p-AgInTe2/p+-BaSi2 solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe2 (AIT) solar cell has been probed for finding the role of BaSi2 as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi2 semiconducting BSF with VOC = 0.90 V, JSC = 43.75 mA/cm2, FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of n-AlSb/p-AIT/p+-BaSi2 dual-heterojunction thin film photovoltaic cell.

CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency.

Even though the recent progress made in complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion-implanted back-surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300-700nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

Advanced Characterization of 1 eV GaInAs Inverted Metamorphic Solar Cells

In this work, 1 eV Ga0.7In0.3As inverted metamorphic (IMM) solar cells were analyzed to achieve a deeper understanding of the mechanism limiting their improvement. For this purpose, high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), high-resolution cross-sectional cathodoluminescence (CL), and transient in situ surface reflectance were carried out. Additionally, the photovoltaic responses of the complete devices were measured using the external quantum efficiency (EQE) and numerically simulated through Silvaco TCAD ATLAS. The combination of structural characterization of the semiconductor layers and measurements of the solar cell photovoltaic behavior, together with device modeling, allows us to conclude that the lifetime of the bulk minority carriers is the limiting factor influencing the PV response since the recombination at the interfaces (GaInP window–GaInAs emitter and GaInAs base–GaInP back surface field (BSF)) does not impact the carrier recombination due to the favorable alignment between the conduction and the valance bands. The advanced characterization using cross-sectional cathodoluminescence, together with transient in situ surface reflectance, allowed the rejection of the formation of traps related to the GaInAs growth conditions as being responsible for the decrement in the minority-carrier lifetime. Conversely, the TEM and HRXRD revealed that the presence of misfit dislocations in the GaInAs layer linked to strain relaxation, which were probably formed due to an excessive tensile strain in the virtual substrate or an incorrect combination of alloy compositions in the topmost layers, was the dominant factor influencing the GaInAs layer’s quality. These results allow an understanding of the contributions of each characterization technique in the analysis of multi-junction solar cells.