Back Surface Field Research Articles

Design of a highly efficient CdTe-based dual-heterojunction solar cell with 44% predicted efficiency

In this article, we theoretically demonstrate highly efficient cadmium telluride (CdTe)-based dual-heterojunction solar cells (DHSCs) with incorporating cadmium selenide (CdSe) and antimony selenide (Sb2Se3), separately as back surface field (BSF) layer using SCAPS-1D simulator. The impacts of various physical parameters have been investigated in details on the photovoltaic performance of the designed cells. It is found that the power conversion efficiency (PCE) of the pristine CdTe solar cell significantly increases by the use of CdSe and Sb2Se3 BSF layers. The optimized PCE of the CdTe solar cell increases from 21.29% for pristine SC to 31.11% with Voc = 1.15 V, Jsc = 30.66 mA/cm2 and FF = 88.57% owing to the use of CdSe BSF layer. On the other hand, the PCE of CdTe DH solar cell enhances to 44.14% with Voc = 1.05 V, Jsc = 49.23 mA/cm2 and FF = 85.71%, respectively by the use of Sb2Se3 BSF layer which is almost consistent with the detailed-balance limit of DHSC. These findings reveal that both the CdSe and Sb2Se3 could be promising BSFs for the fabrication of cost effective, highly efficient CdTe-based dual-heterojunction solar cells.

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

Traditional aluminum back surface field (Al-BSF) multi-crystalline silicon (mc-Si) solar cells have been favored by the market for a long time due to their low cost. However, the Al-BSF formed after Al screen printing and firing restrict the doping profile and the passivation effect. Here we report a scheme to produce the Al-BSF in advance (before phosphorus diffusion) by using the additional preparation processes consisting of three successive steps, namely Al screen printing, annealing and Al removing. The Al removing process helps optimize the depth of Al-BSF, while the annealing process and the subsequent diffusion process helps improve the doping profiles. As a result, the passivation performance of such improved Al-BSF is greatly improved in terms of electrochemical capacitance voltage measurements (ECV) and minority carrier lifetime characterizations. Also the average conversion efficiency for such mc-Si cells with improved Al-BSF reaches 18.73%, which is 0.27% higher than that of the same batch of traditional Al-BSF solar cells. This approach represents an efficient method for further improving mc-Si solar cells.

Efficiency enhancement of CZTSe solar cell using CdS(n)/(AgxCu1–x)2ZnSnSe4 (p) /Cu2ZnSnSe4 (p+) structure

Direct bandgap Cu2ZnSnSe4 (CZTSe) material is a promising absorber for thin film photovoltaics due to its affordable production cost and ecofriendly constituents. However, bulk defects, small grain size, short minority carrier lifetime and band bending at CZTSe/Mo (back contact) interface limit the performance of CZTSe solar cells. To overcome these issues, we design a single junction CdS(n)/ (AgxCu1–x)2ZnSnSe4 (p) /Cu2ZnSnSe4 (p + ) solar cell where we use (AgxCu1–x)2ZnSnSe4 (ACZTSe) as the main absorber layer. We have chosen the carrier density of each layer in a such way that ACZTSe becomes depleted and generated minority are collected efficiently. In our design, we utilize CZTSe as the back surface field layer to prevent surface recombination and indium doped tin oxide (ITO) as the back electrode to avoid band bending and increase the open circuit voltage. Additionally, we optimize the thicknesses of different layers and achieve a maximum efficiency of 18.63% including Shockley-Read-Hall, radiative and surface recombination mechanisms. The photo conversion efficiency (PCE) of our designed solar cell is 6% higher (12.6% vs 18.63%) than that of the best reported selenium rich CZTSe solar cell. The design concept proposed in this work would help in harvesting solar energy efficiently from next generation CZTSe solar cells.

2D-MA3 Sb2 I9 Back Surface Field for Efficient and Stable Perovskite Solar Cells.

In perovskite solar cells (PSCs), a defective perovskite (PVK) surface and cliff-like energy offset at the interface always slow down the charge extraction; meanwhile, interface ion diffusion causes oxidation of the metal electrode, inducing device instability. Here, the in situ grown 2D-(CH3 NH2 )3 Sb2 I9 (MA3 Sb2 I9 ) on the back surface of MAPbI3 results in a more robust interface. MA3 Sb2 I9 changes the MAPbI3 surface to p-type and thus acts like a back surface field to drive charge extraction and suppress recombination, resulting in an obviously higher fill factor (FF) = 0.8 and power conversion efficiency (PCE) = 20.4% of SnO2 /MAPbI3 /MA3 Sb2 I9 /Spiro-OMeTAD (2,2',7,7'-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) PSC than the pure MAPbI3 device. More importantly, strong chemical bonding of SbI prohibits ion diffusion, largely enhancing the thermal stability and longtime stability. Here, special 2D-MA3 Sb2 I9 constructs' robust band alignment and chemical environment at the interface are highlighted for efficient and stable PSCs.

RF magnetron sputtered NiO<sub><italic>x</italic></sub> and NiO<sub><italic>x</italic></sub>/c-Si single-side heterojunction solar cells

<p indent=0mm>NiO_{<italic>x</italic>} is a p-type semiconductor with wide-band gap <sc>(3.6–4.0 eV),</sc> and the energy band structure at NiO_{<italic>x</italic>}/c-Si(n) interface is suitable for c-Si(n) heterojunction solar cell. On the one hand, the big conduction band offset forms a reflection barrier of electron that reduces the interface electron concentration and interface recombination. On the other hand, the valance band offset will change with the deposition conditions, which lower the hole transport barrier and make the hole transport smoothly. Therefore, NiO_{<italic>x</italic>} is a promising hole-selective contact layer for c-Si(n) heterojunction solar cell. In this work, in order to simplify the study, we fabricate single-side heterojunction solar cell with Al-grid/ITO/NiO_{<italic>x</italic>}/SiO_{<italic>x</italic>}/c-Si(n)/SiO_{<italic>x</italic>}/Al-electrode structure. The n-type c-Si(100) wafers with resistivity of <sc>1–10 Ω cm</sc> and thickness of <sc>200 μm</sc> were firstly dipped in KOH solution (25wt%) at 80°C for <sc>4 min</sc> to remove the surface sawing damage, then standardized RCA1 procedure and DHF (6wt%) dip were adopted to remove the contaminants and native oxide presented on the wafer surface. The SiO_{<italic>x</italic>} layer was grown in 5wt% H₂O₂ at 80°C for <sc>20 min.</sc> Afterward, a NiO_{<italic>x</italic>} thin film with thickness of <sc>10 nm</sc> was deposited on the wafer front side using RF magnetron sputtering, and a <sc>100 nm</sc> thick ITO layer was deposited on NiO_{<italic>x</italic>} by DC magnetron sputtering. Then Al-grid on the front and Al-electrode on the back were deposited by electron-beam evaporation. Finally, completed NiO_{<italic>x</italic>}/c-Si(n) single-side heterojunction solar cells were characterized by light/dark <italic>J</italic>-<italic>V</italic> (SAN EI XEC 500M2 solar simulator, KEYTHLEY 2400 source-meter). We investigate the optical, electronical properties and energy band of NiO_{<italic>x</italic>} thin films by changing the sputtering conditions, analyze the carrier transport mechanisms and the interface recombination mechanisms of NiO_{<italic>x</italic>}/c-Si heterojunction. And we find that the valance band offset is the key factor that affects cell performance. The increase of the valance band offset leads to the increase of the series resistance (<italic>R</italic>_s) of the cell, thus reducing the fill factor (FF) and power conversion efficiency (PCE) of the cell (cell Sample B, E and A). When the valance band offset is high and almost the same, the lower the resistivity of NiO_{<italic>x</italic>} thin film is, the lower the series resistance (<italic>R</italic>_s) of the cell becomes, which contributes to the higher FF and the higher PCE of the cell. This is because the lower resistivity of NiO_{<italic>x</italic>} thin film narrows the width of the blocking barrier of the hole and increases the tunneling current (cell Sample A and B). In addition, the experiment and the simulation results (AFORS-HET) show that there are two ways to enhance the cell performance. One is to reduce the valence band offset and interface defects of NiO_{<italic>x</italic>}/c-Si heterojunction so as to lower the interface recombination. The other one is to increase the doping density in NiO_{<italic>x</italic>} that increase the built-in electric field. Therefore, the passivation of NiO_{<italic>x</italic>}/c-Si(n) interface, the improvement of acceptor concentration of NiO_{<italic>x</italic>} emitter, the optimization of back surface field and ITO/NiO_{<italic>x</italic>} contact are the main directions for further research to achieve high efficiency NiO_{<italic>x</italic>}/c-Si heterojunction solar cells.

Impact of Local Back-Surface-Field Thickness Variation on Performance of PERC Solar Cells

This article investigates the impact of the back-surface-field (BSF) thickness variation within a local aluminum contact on the performance of passivated emitter and rear contact solar cells. A significant difference of BSF thickness between contact endings and the center of dash-shaped contacts is verified experimentally by a comprehensive statistical analysis using scanning electron microscopy. The impact of local BSF thickness differences on the cell performance is studied with 3-D technology computer-aided design (TCAD) device simulations. Several device parameters such as BSF thicknesses, the doping concentration in the BSF profile at rear contacts, or the metallized area fraction at the cell rear side are varied. Our simulation study shows that the open-circuit voltage is mainly affected by locally reduced BSF thicknesses, resulting in an efficiency loss up to 0.14% <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">abs</sub> or 0.84% <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">abs</sub> , respectively, if an area fraction of 1% or 20% within a local contact has reduced BSF thicknesses. This effect can be minimized either by reducing the metallized area fraction at the cell rear side or by increasing the doping concentration in the BSF profile at aluminum rear contacts. In addition, we demonstrate that the 3-D simulations can be approximated with 2-D simulations by applying a single doping profile with an average BSF thickness, calculated with the harmonic mean.

Simulation and Optimization of Back Surface Field for Efficient HIT Solar Cells

We investigate an appropriate material for the optimisation of Back Surface Field (BSF) layer in Heterojunction with Intrinsic thin layer (HIT) solar cells: ITO/p-a-Si:H/i-a-Si:H/n-c-Si/BSF/Ag. The obtained results show that it is important to choose hydrogenated amorphous silicon to create the BSF layer instead of crystalline silicon as in the case for conventional HIT solar cells. The use of hydrogenated amorphous silicon creates a significant band discontinuity at the valence band due to the presence of the heterojunction at the interface n-c-Si/n++-a-Si:H. We also show that increasing the BSF layer thickness degrades the solar cell J-V characteristic due to the low diffusion length and lifetime of the minority carriers and also because of the increase of the recombination rate in this heavily doped layer. The global device optimization was performed with SCAPS–1D software under STC conditions and the results show that a considerable efficiency of 27.44 % can be achieved.

Screen-printed n-type Si solar cells with laser-doped selective back surface field

The primary challenge to the industrial application of n-type silicon solar cells is relatively complicated process flow compared to producing p-type silicon solar cells. This paper demonstrates a simple processing sequence to fabricate n-type silicon solar cells in which the boron-doped emitter and phosphorus-doped back surface field (BSF) are formed in one high-temperature step. By introducing a selective BSF structure that is formed by laser doping, the conversion efficiency of the solar cells can be further improved. The averaged conversion efficiency of 21.7% is obtained in batches with relatively large quantity of cells with tight efficiency distribution.

Optimization of Laser Fired Contact Process for the Formation of an Al-BSF Layer

The back-surface field (BSF) layer obtained through the laser fired contact (LFC) process is the key to increasing the efficiency of solar cells. In this paper, we studied the optimization of LFC process parameters—focusing on laser frequency, influence, and speed—to achieve good ohmic contacts, and to reduce the heat-affected zone (HAZ). As frequency increases, interactions between the laser and particles increase, with the particles becoming overly heated. This generates the thermal effect, in which heat is transferred to particles not directly affected by the laser—resulting in the HAZ becoming wider and deeper. Under different laser power conditions, depths of approximately 18 and 8.3 μm were observed at laser speeds of 10 and 100 mm/s, respectively. This analysis of performance variables allowed us to identify those best suited to forming an Al-BSF layer approximately 1.2 μm thick, which resulted in the best LFC procedure while minimizing the HAZ area. HAZ size was minimized at a frequency of 400 kHz, using 5 W laser power, and a laser speed of 100 mm/s, while the best cell characteristics were obtained using a laser pitch of 500 μm and a single laser process.

Pathway towards 24% efficiency for fully screen-printed passivated emitter and rear contact solar cells

In this work, the efficiency potential of the fully screen-printed passivated emitter and rear contact (PERC) solar cell structure is investigated via numerical simulations. A series of improvements and optimizations are performed on bulk quality, emitter properties and metallization of screen-printed PERC solar cells based on experimental results obtained in both industry and laboratory environments. With significantly improved bulk and surface passivation quality, we find that carrier recombination losses at the metal/silicon interface will impose a substantial limitation on efficiencies, highlighting the need for developing new screen-printing technologies to overcome the limitation from contact recombination. By improving the effectiveness of the back-surface field, reducing coverage area of laser-doped selective emitters and the front metal/silicon interface contact area, a 15 mV improvement in open-circuit voltage (V OC) was achieved in our modelled cells, due to greatly reduced contact recombination losses. With the further implementation of a multi-busbar and fine-line printing technologies, efficiency above 24% was obtained from simulations. Subsequently, a comprehensive pathway towards 24% efficiency for screen-printed PERC solar cells is proposed, without the need to implement passivated contacts or transition to a plated metallisation scheme. Key target requirements for future developments are also identified.

Effect of CdS and In3Se4 BSF layers on the photovoltaic performance of PEDOT:PSS/n-Si solar cells: Simulation based on experimental data

In this article, we perform a theoretical analysis on PEDOT:PSS/n-Si heterojunction solar cells for further enhancement of the solar cells. We introduced CdS and In 3 Se 4 chalcogenide compounds as back surface field (BSF) layer in the solar cell. The impacts of various parameters such as the thickness, doping and defect densities on the photovoltaic performance have been investigated in details employing the solar cell capacitance simulator (SCAPS-1D) software. It is found that the power conversion efficiency (PCE) of the PEDOT:PSS/n-Si heterojunction solar cells significantly increases with use of these BSF layers. The optimized PCE of the PEDOT:PSS/n-Si solar cell is 22.46% which increases to 30.94% with V OC = 0.89 V, J SC = 44.02 mA/cm 2 and FF = 78.92%, respectively due to the use of CdS BSF layer. On the other hand, the PCE of the solar cell is found to be 38% with V OC = 0.84 V, J SC = 53.22 mA/cm 2 and FF = 85.11%, respectively as a result of longer wavelength absorption in In 3 Se 4 BSF layer. These entire theoretical predictions indicate the promising applications of CdS and In 3 Se 4 compounds as BSF layers in PEDOT:PSS/n-Si heterojunction solar cells to harness solar energy in near future. • Design guideline to fabricate high-efficiency PEDOT:PSS/n-Si solar cells using CdS and In 3 Se 4 BSF layers. • The simulation reveals that CdS and In 3 Se 4 BSF layers have significant effects on the performance of the solar cells. • The optimized PCE of the PEDOT:PSS/n-Si solar cell is 22.46% which increases to 30.94% with use of CdS BSF layer. • The PCE of the PEDOT:PSS/n-Si solar cell further increases to 38% with use of In 3 Se 4 BSF layer.

Monitoring versus prediction of the power of three different PV technologies in the coast of Lima-Peru

This article presents the benefits of two simple analytical models for estimating the outdoor performance of three different photovoltaic technologies in Lima, Peru. The Osterwald and the constant fill factor models are implemented to estimate the maximum power delivered by three photovoltaic module technologies: aluminum back surface field, heterojunction with intrinsic thin-layer and amorphous/microcrystalline thin-film tandem. A 12-months experimental campaign is carried out through measurements of current-voltage curves, irradiance and module temperature. The results show that both models overestimate the modelled power when compared to the measured one. In order to correct the maximum power predicted by both models, a correction factor is introduced. This correction factor allows us to estimate losses and a respective effective nominal power to minimize the prediction error on a monthly and yearly basis. These parameters demonstrate a unique behavior for each technology during different months implying different seasonal impacts of the ambient variables on the module performance. The effectiveness of this correction factor is demonstrated through accuracy measures. It enables the photovoltaic power prediction with an error < 1% for the particular climate in Lima, Peru.

Enhancement of efficiency and external quantum efficiency of CIGSSe solar cell by replacement and inserting buffer and Cu2O ER-HTL layer

In this article, the performance of CIGSSe solar cells have been analyzed in two stages. Firstly, a conventional structure MgF2/ZnO:B/CdS/CIGSSe/Mo has been simulated based on experimental data to validate the results. Three toxic-free, buffer layer materials ZnSnO, ZnS and ZnMnO have been used in the conventional structure. Secondly, the recombination loss has been reduced and external quantum efficiency (EQE) has been increased by adding p-type cuprous oxide (p-Cu2O) layer at back surface field (BSF) contact. BSF acts as an electron reflected-hole transport layer (ER-HTL) in a conventional structure and proposed CIGSSe solar cell. The efficiency and EQE of the proposed Type-II solar cells have been increased by 5.94% and 2% respectively by optimizing cell parameters in terms of thickness, energy bandgap and doping concentration. It is shown that the proposed solar cell with ZnMnO as buffer layer achieves a conversion efficiency of 28.86%.

CuO based solar cell with V2O5 BSF layer: Theoretical validation of experimental data

Abstract In this article, the experimental and simulation study of a novel heterostructure (ITO/ZnO/CuO/V2O5/Ag) of the cupric oxide (CuO)-based solar cells have been presented. The heterojunction of the CuO-based solar cell was fabricated using an inexpensive and environmentally benign sol-gel spin coating technique. The structural properties of the fabricated solar cell were studied using an X-ray diffractometer and a scanning electron microscope. The simulation study of the designed CuO-based heterojunction solar cell was conducted by the SCAPS-1D simulator. The experimental photovoltaic parameters were theoretically validated. The performance of the solar cell was optimized through the further numerical investigations of the effect of thickness and carrier concentration of CuO absorber and vanadium pentoxide (V2O5) back surface field (BSF) layer, defect density at CuO absorber and ETL/absorber interface layer and optical loss at the front surface of the solar cell. The optimized solar cell exhibited a power conversion efficiency (PCE) of 12.09% with VOC, JSC, and FF of 0.748 V, 24 mA/cm2, and 67.4%, respectively.

Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD

An ultra-thin silicon nitride (SiN x ) layer formed by catalytic chemical vapor deposition (Cat-CVD) is used to replace the Si dioxide (SiO2) layer of a tunnel oxide passivated contact solar cell. The passivation quality of crystalline Si (c-Si) with a stack of the ultra-thin SiN x and n-type hydrogenated amorphous Si (a-Si:H) or microcrystalline Si (μc-Si:H), also formed by Cat-CVD, is significantly improved by annealing at 850 °C, probably due to the formation of a back surface field layer. Cat-CVD SiN x with thicknesses of up to 2.5 nm can have sufficient tunneling conduction. The ultra-thin SiN x having functions of surface passivation and carrier tunneling, and the unification of the formation method for the tunnel SiN x and conductive layers will lead to the realization of tunnel nitride passivated contact solar cells.

Influence of back surface field layer on enhancing the efficiency of CIGS solar cell

The main objective of this research work is to improve the efficiency of conventional baseline structured CIGS solar cells by adding a Back surface field (PbS) layer between the CIGS absorber and the Mo back contact. The possible effect of the p-PbS layer on the photovoltaic parameters of the CIGS thin-film solar cell has been investigated by SCAPS-1D. The simulation of J-V characteristics showed that conversion efficiency of the conventional solar cell (Al/ITO/Al-ZnO/i-ZnO/CIGS/Mo/Substrate) is 22.67% (3 µm CIGS layer) and an improved conversion efficiency of 24.22% has been gained after adding the BSF (PbS) layer. The PbS layer between CIGS and Mo back contact provides an additional hole tunneling action that form a quasi ohmic contact from a schottkey type near the back region and this quasi ohmic contact improves the efficiency of carrier collection as well as BSF action reduces the back surface recombination. Besides thickness, energy band gap, electron affinity of the PbS layer were varied and optimized. Again, operating temperature on the overall performance of the proposed solar cell was also investigated. These findings are very promising for future performance and cost effective solar cell.

Enabling bifacial thin film devices by developing a back surface field using CuxAlOy

Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap CuxAlOy as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.

Significant Passivation Effect of Cu(In, Ga)Se2 Solar Cells via Back Contact Surface Modification Using Oxygen Plasma

Molybdenum back contact plays a significant role in chalcopyrite Cu(In, Ga)Se2 (CIGS) solar cells. A molybdenum oxide intermediate layer is applied to optimize the back contact from the aspect of absorber crystal growth regulation and back surface field reconstruction. A novel molybdenum oxide preparation method is introduced through oxygen plasma treatment of the molybdenum layer. CIGS film is obtained by sputtering from a quaternary target with post‐selenization. The shortage of Cu and Se in the middle of the absorption layer causes crystallization stratification. A bidirectional regulation method for controlling intermediate fine grains is proposed. Superior crystallinity is produced to facilitate carriers’ transport and reduce recombination at grain boundaries. Back passivation is achieved by forming a reverse p–n junction on the back surface. Despite the formation of this reverse junction, the efficiency of the device is still improved because the transport of holes is assisted by the molybdenum oxide's gap states. Thus, back surface recombination is effectively reduced by back passivation, leading to the increase in open‐circuit voltage (Voc) and fill factor (FF). The power conversion efficiency of treated solar cells increases by 34.1%. An innovative direction is proposed to optimize the back contact of CIGS solar cells in this study.

Numerical Simulation of CZTSe Based Solar Cells Using Different Back Surface Field Layers: Improvement and Comparison

This work reports on a numerical modeling of Cu2ZnSnSe4 (CZTSe) thin film based solar cells using Solar Cell Capacitance Simulator (SCAPS). First, a conventional CZTSe/CdS/ZnO solar cell structure has been proposed and optimized. The optimal output parameters (power conversion efficiency PCE = 24.50%, short circuit current density Jsc = 47.732 mA/cm2, fill factor FF = 80.478% and open circuit voltage Voc = 0.639 V) have been obtained for ZnO, CdS and CZTSe layer thicknesses closed to 0.02 μm, 0.02 μm and 1.5 μm, respectively. Next, to improve on the conventional solar cell performance, three cell structures with different highly P-doped materials as back surface field (BSF) layers, such as P+-CZTSe, P+-Cu2O and P+-CZTS, have been proposed and optimized. In comparison to the conventional cell, devices with BSF layer have shown improvements of all the photovoltaic parameters. The CZTS/CZTSe/CdS/ZnO device has provided the highest performance (PCE = 25.83%, Jsc = 51.04 mA/cm2, FF = 78.14% and Voc = 0.646 V) for ZnO, CdS, CZTSe and P+-CZTS thicknesses closed to 0.02 μm, 0.02 μm, 1.5 μm and 0.4 µm, respectively. Additionally, the generation rate is no affected by the BSF layer; however, the recombination rate has decreased in the bulk and back surface of the CZTSe absorber. Finally, the insertion of the BSF layer has caused an increase of external quantum efficiency (EQE) up to 94.5% and a slight red shift of absorption in the long-wavelength region near the band edge.

Optimization of photovoltaic solar cell performance via the earth abundant Zn3P2 back surface field

CZTSSe solar cells are the photovoltaic solar cells of the 3rd generation that can potentially overcome the Shockley-Queisser limit of 31–33.16 % power conversion efficiency for single-bandgap solar cells. In order to optimize the performance of the solar cell, the change in the electrical parameters with temperature, CZTSSe absorber layer thickness and CdS buffer layer thickness on device structure ZnO/CdS/CZTSSe/Mo without back surface field (BSF) were studied using SCAPS 1D simulator program. Using the optimum value of absorber layer, buffer layer thickness and temperature, the effect of doping concentration and series & shunt resistance using Zn3P2 as a back surface field(BSF) of device structure as ZnO/CdS/CZTSSe/Zn3P2/Mo of the photovoltaic cell have been investigated. This study shows that there is an increase in the photovoltaic performance by using BSF from η = 17.8 % to η = 19.7 %.