Abstract
CZTSSe solar cells are the photovoltaic solar cells of the 3rd generation that can potentially overcome the Shockley-Queisser limit of 31–33.16 % power conversion efficiency for single-bandgap solar cells. In order to optimize the performance of the solar cell, the change in the electrical parameters with temperature, CZTSSe absorber layer thickness and CdS buffer layer thickness on device structure ZnO/CdS/CZTSSe/Mo without back surface field (BSF) were studied using SCAPS 1D simulator program. Using the optimum value of absorber layer, buffer layer thickness and temperature, the effect of doping concentration and series & shunt resistance using Zn3P2 as a back surface field(BSF) of device structure as ZnO/CdS/CZTSSe/Zn3P2/Mo of the photovoltaic cell have been investigated. This study shows that there is an increase in the photovoltaic performance by using BSF from η = 17.8 % to η = 19.7 %.
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