Abstract

In this work, a magnesium (Mg) thin film with a low work function is introduced to obtain a downward energy band at the rear surface of a hybrid solar cell to achieve the function of a back surface field (BSF) similar to the conventional n-n+ high-low junction, i.e., favouring the majority carrier transport and suppressing minority carrier recombination. The open circuit voltages (Voc) of the hybrid solar cells with the Mg BSF layer achieve a clear improvement over those containing only the conventional metal electrode (e.g., Ag), resulting in an increase in the power conversion efficiency (PCE) of the hybrid solar cells from 9.2% to 12.3%. The Suns-Voc measurement determined using a Sinton tool gives Voc as a function of light intensity and shows that Voc increases linearly with the light intensity for the solar cell with the Mg BSF but increases first and then stabilises for the cells without the Mg BSF. This result is attributed to a difference in back surface recombination, further confirming the efficacy of an Mg thin film as a BSF. This work indicates that the BSF of hybrid solar cells could be achieved by a doping-free, simple, and room temperature process.

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