Abstract
This paper theoretically outlines a new n-AlSb/p-AgInTe2/p+-BaSi2 solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe2 (AIT) solar cell has been probed for finding the role of BaSi2 as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi2 semiconducting BSF with VOC = 0.90 V, JSC = 43.75 mA/cm2, FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of n-AlSb/p-AIT/p+-BaSi2 dual-heterojunction thin film photovoltaic cell.
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